Matches 351 - 400 out of 631 < 1 2 3 4 5 6 7 8 9 10 11 12 13 >
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6642559 Structure and process for improving high frequency isolation in semiconductor substrates  
An isolation structure for high frequency integrated circuits is a conductive material disposed over a region of active gallium arsenide substrate. The conductive material over the active region...
6635546 Method and manufacturing MRAM offset cells in a damascene structure  
A method of manufacturing an offset MRAM device ( 110 ), including utilizing two resist layers either to pattern a magnetic stack layer to form offset conductive lines ( 158 ) and magnetic memory...
6635524 Method for fabricating capacitor of semiconductor memory device  
A method of manufacturing a capacitor having a tantalum-contained-dielectric layer including the steps of forming a lower electrode on a semiconductor substrate; forming a dielectric layer...
6635550 Semiconductor on insulator device architecture and method of construction  
An SOI architecture is provided that comprises an inner substrate 10 which has a buried conductor layer 12 formed on an outer surface thereof. A bonding layer 14 is used to provide a cohesive...
6627507 Integrated circuit and method of using porous silicon to achieve component isolation in radio frequency applications  
The invention relates to an improved substrate ( 100 ) using a layer ( 112 ) or region ( 130 ) of porous silicon that is created in the bulk silicon substrate material ( 110 ) to increase the...
6627508 Method of forming capacitors containing tantalum  
The invention pertains to semiconductor circuit components and capacitors, and to methods of forming capacitors and semiconductor circuit components. In one aspect, the invention includes a method...
6613640 Method for fabricating an integrated ferroelectric semiconductor memory and integrated ferroelectric semiconductor memory  
The integrated ferroelectric semiconductor memory is fabricated according to the stack cell principle. A ferroelectric capacitor module is formed on an intermediate oxide above a selection...
6610555 Selectively doped electrostatic discharge layer for an integrated circuit sensor  
A structure and method for creating an integrated circuit passivation structure including, a circuit, a dielectric, and metal plates over which an insulating layer is disposed that electrically...
6608363 Transformer comprising stacked inductors  
A transformer fabricated over a semiconductor die has been disclosed. A disclosed embodiment comprises a first inductor fabricated over a first bond pad. The first inductor is electrically...
6605515 Method for manufacturing thin-film capacitor for performing temperature compensation of junction capacitance of semiconductor device  
In a method for manufacturing a thin-film capacitor for performing temperature compensation by layering a first dielectric thin-film and a second dielectric thin-film, wherein the second dielectric...
6593202 Semiconductor memory device and fabrication method thereof  
In a method of fabricating a COB DRAM cell, a polysilicon plug is formed on the source and drain in self-alignment with the gate electrode. A bit line contact and a storage electrode contact are...
6583003 Method of fabricating 1T1R resistive memory array  
A method is provided for forming a 1T1R resistive memory array. The method of forming a 1T1R resistive memory array structure on a semiconductor substrate comprises forming an array of transistors...
6576978 Use of non-ion-implanted resistive silicon oxynitride films as resistors  
The present disclosure is directed to the use of non-ion-implanted silicon oxynitride films as resistive elements. Such films have been traditionally used in semiconductor processing as...
6576479 Method for forming vertical ferroelectric capacitor comprising forming ferroelectric material in gap between electrodes  
A vertical ferroelectric capacitor structure and the method of fabricating the same. An insulating layer is formed on a semiconductor substrate. A lower opening and an upper opening with the depth...
6576524 Method of making a prismatic capacitor  
A method of making a flat capacitor includes forming at least one recess on an inside surface of a metal foil blank, leaving a surrounding peripheral flange. A coating performing as an electrode of...
6573148 Methods for making semiconductor inductor  
A semiconductor inductor and a method for making a semiconductor inductor are provided. An oxide layer disposed over a substrate is etched to form an interconnect metallization trench within the...
6573150 Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors  
The present invention provides a method of integrating tantalum oxide into an MIM capacitor for a semiconductor device, comprising the step of vapor-depositing the tantalum oxide from an...
6563190 Capacitor array preventing crosstalk between adjacent capacitors in semiconductor device  
A capacitor array of a semiconductor device including a plurality of capacitors is provided. The capacitor array includes a plurality of lower electrodes, which are formed over a semiconductor...
6559003 Method of producing a ferroelectric semiconductor memory  
A method of producing a ferroelectric semiconductor memory, includes forming a switching transistor on a semiconductor substrate, applying an insulating layer to the switching transistor and then...
6548367 Method to fabricate MIM capacitor with a curvillnear surface using damascene process  
In one method embodiment, the present invention recites forming an opening in a substrate during a damascene process. The present embodiment then recites forming a dielectric region having two...
6548425 Method for fabricating an ONO layer of an NROM  
The present invention fabricates an oxide-nitride-oxide (ONO) layer of an NROM. A first oxide layer is formed on the surface of the substrate of a semiconductor wafer. Then two CVD processes are...
6548368 Method of forming a MIS capacitor  
Provided is a method of integrating Ta 2 O 5 into an MIS stack capacitor for a semiconductor device by forming a thin SiON layer at the Si/TaO interface using low temperature remote plasma...
6548365 Monolithic integrated circuit incorporating an inductive component and process for fabricating such an integrated circuit  
A monolithic integrated circuit ( 1 ) incorporating an inductive component ( 2 ) and comprising: a semiconductor substrate layer ( 2 ); a passivation layer ( 4 ) covering the substrate layer ( 2...
6544832 Method of fabricating a stack capacitor DRAM  
A DRAM capacitor contact comprised of a silicon oxide layer with a trench having sidewalls and a form in the silicon oxide layer. A dielectric liner is coated on the sidewalls of the trench. A...
6541332 Method for fabricating capacitor containing zirconium oxide dielectric layer  
The disclosure relates to a method for fabricating a capacitor that prevents a rise in the production cost and complexity of production processes caused by performing deposition and subsequent...
6541340 Method of manufacturing a semiconductor device with a concave trench  
A semiconductor device and a method of manufacturing the same are provided which are novel and fully improved and are capable of lowering satisfactorily a high-frequency resistance or direct...
6538271 Semiconductor device and method of manufacturing the same  
A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si—H bond and...
6534374 Single damascene method for RF IC passive component integration in copper interconnect process  
A method of integrated circuit component integration in copper interconnects, including the following steps of the first embodiment. A wafer is provided having an exposed top-most planar copper...
6534406 Method for increasing inductance of on-chip inductors and related structure  
A disclosed embodiment comprises patterning a conductor in a dielectric in a semiconductor die. The dielectric can be, for example, silicon oxide or a low-k dielectric while the conductor can...
6531376 Method of making a semiconductor device with a low permittivity region  
A method of making a semiconductor device ( 10 ) having a low permittivity region ( 24 ) includes forming a first layer ( 30/42 ) over a surface of a trench ( 20 ), and etching through an opening (...
6528383 Simultaneous formation of deep trench capacitor and resistor  
A compact resistor is formed in an integrated circuit using many of the same steps as are employed in forming a trench capacitor for a DRAM cell; in particular depositing a layer of heavily doped...
6528436 Method of forming silicon nitride layer directly on HSG polysilicon  
Silicon nitride layers, having thicknesses of 100 angstroms or less, are formed using chemical vapor deposition (CVD). Higher pressure and lower temperature deposition regimes are used to provide...
6524925 Method of forming a thin-film resistor in a semiconductor wafer  
The present invention provides a method of forming a thin-film resistor on a dielectric layer of a semiconductor wafer. First, a resistance layer, a buffering layer and a protective layer are...
6518141 Method for manufacturing a radio frequency integrated circuit on epitaxial silicon  
Disclosed are an RF integrated circuit and method for manufacturing the same. The RF integrated circuit comprises an insulating layer including a plurality of windows; epitaxial silicon layers...
6514807 Method for fabricating semiconductor device applied system on chip  
The present invention provides a method for fabricating a semiconductor device that can be applied in system on chip (SOC), comprising: providing a substrate with a memory cell region and a...
6504228 Semiconductor device and method for manufacturing the same  
A lower electrode film is made to have a crystal grain laminated structure composed of a granular structure crystal grain layer and a columnar structure crystal grain layer. Also, a barrier layer...
6500722 Inductor recognition method, layout inspection method, computer readable recording medium in which a layout inspection program is recorded and process for a semiconductor device  
An inductor recognition method for recognizing an inductor, a layout inspection method wherein it is possible to automatically carry out a verification of a design standard, in the inductor and a...
6500724 Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material  
A semiconductor device and a method of making a semiconductor device. A damascene metal layer ( 16 ) is formed in an insulating dielectric layer ( 12 ), which is in direct electrical communication...
6495413 Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits  
A method for fabricating integrated capacitors, of particular utility in forming a ferroelectric capacitor array for a ferroelectric memory integrated circuits, begins with provision of a...
6486021 Method for manufacturing a semiconductor device having incorporated therein a high K capacitor dielectric  
A semiconductor device for use in a memory cell includes an active matrix an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate...
6486017 Method of reducing substrate coupling for chip inductors by creation of dielectric islands by selective EPI deposition  
A new method is provided for the creation of a horizontal spiral inductor over the surface of a silicon substrate. A first layer of dielectric is deposited over the surface of the substrate, this...
6482693 Methods of forming diodes  
Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating...
6482658 Nonvolatile ferroelectric memory having shunt lines  
A nonvolatile ferroelectric memory and method for fabricating the same include shunt lines to reduce RC delay on wordlines in the memory. A unit cell of the nonvolatile ferroelectric memory can...
6477031 Electronic component for high frequency signals and method for fabricating the same  
An electronic component for a high frequency signal having a good characteristics and a fabrication method thereof at a high yield are disclosed. The electronic component according to the present...
6475871 Passive multiplexor test structure for integrated circuit manufacturing  
A test structure for analyzing failures due to fabrication induced defects in integrated circuits includes a matrix of bit cells formed by word lines and bit lines. An associated word line probe...
6472257 High quality factor, integrated inductor and production method thereof  
The integrated inductor comprises a coil of metal which is formed in the second metal level. The coil is supported by a bracket extending above spaced from a semiconductor material body by an air...
6465320 Electronic component and method of manufacturing  
A method of manufacturing an electronic component includes forming first, second, and third capacitors ( 260, 270, 280 ) and electrically testing the first, second, and third capacitors to...
6462396 Inductance structure on semiconductor substrate  
An inductance structure arranged on a semiconductor substrate, including an inductance and a conductive plane arranged between the inductance and the substrate. The conductive plane is formed of...
6461929 Method for the fine tuning of a passive electronic component  
A method for the fine tuning of a passive electronic component having at least a carrier substrate and at least one electrically conducting layer containing a material having a conducting nitride,...
6458670 Method of manufacturing a circuit substrate  
A multilayer wiring substrate has a passive circuit element disposed on an insulating base substrate, and an insulating layer is disposed on the insulating base substrate with the passive circuit...
Matches 351 - 400 out of 631 < 1 2 3 4 5 6 7 8 9 10 11 12 13 >