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7138068 |
Printed circuit patterned embedded capacitance layer
A method is disclosed for fabricating a patterned embedded capacitance layer. The method includes fabricating ( 1305, 1310 ) a ceramic oxide layer ( 510 ) overlying a conductive metal layer ( 515 )...
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7135366 |
Method for fabricating a lateral metal-insulator-metal capacitor
A lateral metal-insulator-metal capacitor fabricated with consistent dummy fill and slotting patterns that assure predictable and controlled performance from the metalization layout while...
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7132297 |
Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material
A thin-film multilayer high-Q inductor having a ferromagnetic core and spanning at least three metal layers is formed by forming a plurality of parallel first metal runners on the semiconductor...
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7132360 |
Method for treating a semiconductor surface to form a metal-containing layer
A method for treating a semiconductor surface to form a metal-containing layer includes providing a semiconductor substrate having an exposed surface. The exposed surface of the semiconductor...
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7132709 |
Semiconductor device including a capacitor having a capacitive insulating film of an insulating metal oxide
A capacitor 11 made up of a lower electrode 8, a capacitive insulating film 9 of an insulating metal oxide and an upper electrode 10 is formed over a semiconductor substrate 1. A...
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7129145 |
Method of manufacturing an IC coil mounted in an information carrier
An information carrier in which an IC element formed integrally with a coil is mounted and which has an extended communication range and a method of manufacturing the same and a structure of the IC...
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7125788 |
Circuit device and method of manufacturing the circuit device
A circuit device includes at least one under bump metal formed on a surface of a substrate and a connection bump provided on the uppermost layer of the under bump metal. At least one laminated...
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7122422 |
Methods of forming capacitors
This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a...
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7118984 |
Method for fabricating semiconductor component
Electrode layers ( 1, 2 ) are arranged on both sides of a dielectric layer ( 3 ) facing each other so as to configure a capacitor. Lead electrodes ( 4, 5 ) are formed in the electrode layers ( 1, 2...
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7112502 |
Method to fabricate passive components using conductive polymer
A method and structure for an integrated circuit chip has a logic core which includes a plurality of insulating and conducting levels, an exterior conductor level and passive devices having a...
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7109088 |
Multilayer analog interconnecting line layout for a mixed-signal integrated circuit
A mixed-signal integrated circuit includes a metal-insulator-metal or polysilicon-insulator-polysilicon capacitor. The electrical path from one electrode of the capacitor passes through a first...
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7101757 |
Nonvolatile memory cells with buried channel transistors
In a nonvolatile memory cell ( 110 ), the select gate transistor is formed as a buried channel transistor to increase the transistor current.
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7098044 |
Method of forming an etched metal trace with reduced RF impedance resulting from the skin effect
The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to...
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7094657 |
Method for protecting against oxidation of a conductive layer in said device
In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment...
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7094611 |
Method of producing ferroelectric capacitor
A method of producing a ferroelectric capacitor includes preparing a semiconductor substrate having MOSFETs with an impurity diffused area in a memory cell area and a peripheral circuit area;...
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7087519 |
Method for forming contact having low resistivity using porous plug and method for forming semiconductor devices using the same
A method for forming a contact of a semiconductor device is disclosed. A first interlevel dielectric (ILD) layer is formed on a conductive region, e.g., an active region. The first ILD layer is...
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7087438 |
Encapsulation of conductive lines of semiconductor devices
The invention relates to a method of encapsulating conductive lines of semiconductor devices and a structure thereof. An encapsulating protective material, such as TaN, Ta, Ti, TiN, or combinations...
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7087479 |
Method of forming integrated circuit contacts
Contacts are formed to integrated circuit devices by first forming a conductive layer ( 80 ) on a semiconductor device. An optional dielectric layer ( 130 ) is formed over the conductive layer and...
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7078259 |
Method for integrating thermistor
A structure and method are provided for forming a thermistor. Isolation structures are formed in a substrate including at least an upper layer of a single crystal semiconductor. A layer of salicide...
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7078243 |
Shielding arrangement to protect a circuit from stray magnetic fields
A shielding arrangement for protecting a circuit containing magnetically sensitive materials from external stray magnetic fields. A shield of a material having a relatively high permeability is...
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7074688 |
Method of making an electrode for an electrochemical capacitor and the method of making an electrochemical capacitor
The present invention provides a method of making an electrochemical capacitor electrode comprising a collector and an electronically conductive porous layer formed on the collector while keeping...
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7074667 |
Semiconductor memory device including storage nodes and resistors and method of manufacturing the same
A semiconductor memory device according to embodiments of the invention includes storage nodes and resistors. A method of manufacturing the semiconductor memory device according to some embodiments...
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7071007 |
Method of forming a low voltage drive ferroelectric capacitor
A method of forming a low-voltage drive thin film ferroelectric capacitor includes the steps of depositing a ferroelectric and platinum thin film dielectric layer over a bottom electrode, annealing...
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7071070 |
Method of fabricating capacitor
A method of fabricating a capacitor is described. A dielectric layer is formed over a substrate. An upper electrode having multiple openings therein is formed over the dielectric layer. Then, a...
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7071052 |
Resistor with reduced leakage
A resistor 100 is formed in a semiconductor layer 106 , e.g., a silicon layer on an SOI substrate. A body region 108 is formed in a portion of the semiconductor layer 106 and is doped to a...
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7064414 |
Heater for annealing trapped charge in a semiconductor device
A structure and associated method for annealing a trapped charge from a semiconductor device. The semiconductor structure comprises a substrate and a first heating element. The substrate comprises...
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7056801 |
Radio frequency integrated circuit, and method for manufacturing the same
The present invention discloses a radio frequency integrated circuit and a method for manufacturing the same. The radio frequency integrated circuit is manufactured by forming an inductor and a...
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7056800 |
Printed circuit embedded capacitors
One of a plurality of capacitors embedded in a printed circuit structure includes a first electrode ( 415 ) overlaying a first substrate layer ( 505 ) of the printed circuit structure, a...
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7053747 |
Method for producing a spiral inductance on a substrate, and a device fabricated according to such a method
A device and a method for producing such a device is provided, whereby the windings of a spiral inductance are embedded in a membrane such that they are freely suspended over a completely...
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7049197 |
Method of manufacturing a semiconductor device
In a method of manufacturing a semiconductor device including independent gate patterns separated from each other, an active region is defined by forming a field region on a substrate. A gate oxide...
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7045420 |
Semiconductor device comprising capacitor and method of fabricating the same
A high density semiconductor device is formed with a constant capacitor capacitance. The semiconductor device includes a memory cell region and a peripheral circuit region. An insulating film,...
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7045419 |
Elimination of the fast-erase phenomena in flash memory
A method of forming a semiconductor device that includes providing a semiconductor substrate, forming a first insulating layer over the semiconductor substrate, forming a floating gate over the...
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7041552 |
Integrated metal-insulator-metal capacitor and metal gate transistor
An integrated circuit structure is disclosed that comprises a pair of capacitors, each having metal plates separated by an insulator, and metal gate semiconductor transistors electrically connected...
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7041565 |
Method for fabricating a capacitor in a semiconductor device
A method for fabricating a capacitor in a semiconductor device that includes providing a semiconductor substrate, forming at least one shallow trench isolation structure in the semiconductor...
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7041511 |
Pt/PGO etching process for FeRAM applications
A method of etching a noble metal top electrode on a ferroelectric layer while preserving the ferroelectric properties of the ferroelectric layer and removing etching residue includes preparing a...
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7041566 |
Method for forming inductor in semiconductor device
The present invention relates to a method for forming an inductor in a semiconductor device. The method comprises the steps of forming a first metal layer on a semiconductor substrate in which a...
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7037800 |
Radio frequency semiconductor device and method of manufacturing the same
The present invention discloses a high frequency device including a first wafer providing an inductor having via contact plugs passing through the first wafer and a second wafer bonded to the first...
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7033880 |
Inductor for semiconductor device and method of making same
An inductor for a semiconductor device is formed within a groove in an insulating layer on a semiconductor substrate. A number of lower conductive lines are formed across the groove. A cylindrical...
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7029970 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device capable of preventing an electric short between lower electrodes caused by leaning lower electrodes, or lifted lower electrodes and of securing a...
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7026206 |
Method of making resistive element having a stable contact resistance
A semiconductor apparatus includes a MOS transistor and a resistive element having insulative first polysilicon and conductive second polysilicon films, an insulating film for a resistive element,...
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7015109 |
Interdigital capacitor and method for adjusting the same
An interdigital capacitor includes a semiconductor substrate, and a pair of comb-like electrodes formed on the semiconductor substrate. At least one of the pair of comb-like electrodes includes a...
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7015152 |
Method of film deposition, and fabrication of structures
A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is...
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7005377 |
Bimetal layer manufacturing method
A bimetal layer manufacturing method includes the procedure of: forming a first dielectric layer on the surface of a semiconductor substrate which has a first metal layer (conductive layer) of a...
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7005360 |
Method for fabricating a microelectronic circuit including applying metal over and thickening the integrated coil to increase conductivity
A method for fabricating a microelectronic circuit having an improved electrically conductive element. The method includes providing a finished processed microelectronic circuit having a...
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6998321 |
Method for forming inductor in semiconductor device
The present invention relates to a method for forming an inductor being a passive device in RE MEMS, RFCMOS, Bipolor/SiGe, BiCMOS semiconductor devices. According to the present method, a lower...
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6992366 |
Stacked variable inductor
Disclosed is a stacked variable inductors manufactured by stacking M (M≧2) metal layers on a semiconductor substrate, and provides stacked variable inductors comprising, 1 to N inductors...
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6991992 |
Method for forming inductor in semiconductor device
The present invention relates to a method for manufacturing an inductor being a passive device in RE MEMS, RFCMOS, Bipolor/SiGe and BiCMOS semiconductor devices. According to the present invention,...
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6990725 |
Fabrication approaches for the formation of planar inductors and transformers
This invention relates to the fabrication of planar inductive components whereby the design in cross-section describes a conductor surrounded by magnetic material along the length of the conductor;...
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6984869 |
High performance diode implanted voltage controlled p-type diffusion resistor
The present invention provides a diffusion resistor that is formed in the substrate. A diffusion region is formed within the substrate that contains first and second contact regions extending...
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6979526 |
Lithography alignment and overlay measurement marks formed by resist mask blocking for MRAMs
A method of manufacturing a resistive semiconductor memory device ( 10 ), comprising depositing an insulating layer ( 34 ) over a workpiece ( 30 ), and defining a pattern for a plurality of...
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