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7361568 |
Embedded capacitors and methods for their fabrication and connection
Embedded capacitors comprise a bimetal foil ( 500 ) that includes a first copper layer ( 205 ) and an aluminum layer ( 210 ) on the first copper layer. The aluminum layer has a smooth side adjacent...
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7361540 |
Method of reducing noise disturbing a signal in an electronic device
Certain aspects of a method for reducing noise disturbing at least one signal in an electronic device may comprise shielding a first layer doped with a first dopant from a signaling layer employing...
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7354793 |
Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.
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7348209 |
Resistance variable memory device and method of fabrication
Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is...
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7348654 |
Capacitor and inductor scheme with e-fuse application
RF devices formed in integrated circuit devices include a top metal level overlying a substrate. The top metal level comprises pads and portions of planned RF devices and an RF metal level...
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7342300 |
Integrated circuit incorporating wire bond inductance
The invention relates to the field of electronics, more particularly to the wire bonds incorporated into an integrated circuit package such as a quad flat pack, a ball grid array or hybrid style...
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7338852 |
Method of forming a semiconductor device having a capacitor and a resistor
A method of simultaneously forming at least: one capacitor two resistors and one metal-oxide semiconductor. A first doped polysilicon layer/patterned interpoly oxide film/second doped polysilicon...
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7338851 |
Diode/superionic conductor/polymer memory structure
A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over...
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7332401 |
Method of fabricating an electrode structure for use in an integrated circuit
An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion...
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7329585 |
Method of manufacturing semiconductor device
Disclosed herein is a method of manufacturing a semiconductor device, and more specifically, to a method of manufacturing a semiconductor device having a capacitor and a resistor in which a thin...
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7329575 |
Semiconductor device and semiconductor device manufacturing method
A semiconductor technique is provided which can achieve both of lowered resistance in a logic formation region and reduced leakage current of the capacitor of a memory device. Source/drain regions...
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7326260 |
Process for producing solid electrolytic capacitor
The invention provides a process for fabricating a solid electrolytic capacitor of the chip type which process includes the steps of plating a fabrication frame comprising an anode terminal member...
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7326624 |
Method of making thin-film chip resistor
A method of making a thin-film chip resistor includes: a step of making a material plate A formed with lengthwise breaking grooves A 1 and crosswise breaking grooves A 2 along which the plate is...
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7323762 |
Semiconductor package substrate with embedded resistors and method for fabricating the same
A semiconductor package substrate with embedded resistors and a method for fabricating the same are proposed. Firstly, an inner circuit board having a first circuit layer thereon is provided, and a...
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7320924 |
Method of producing a chip-type solid electrolytic capacitor
A chip-type solid electrolytic capacitor comprises capacitor elements. A cathode terminal comprising a plate-like conductor is interposed between cathode layers of the capacitor elements. The...
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7320923 |
SRAM cell
A method for forming a resistor of high value in a semiconductor substrate including forming a stack of a first insulating layer, a first conductive layer, a second insulating layer, and a third...
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7316961 |
Method of manufacturing semiconductor device
Provided is a method of manufacturing a semiconductor device with enhancements of electrical characteristics. The method includes sequentially forming a lower electrode and an insulating layer on a...
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7314776 |
Method to manufacture a phase change memory
Briefly, in accordance with an embodiment of the invention, a method to manufacture a phase change memory is provided. The method may include forming a first electrode contacting the sidewall...
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7314786 |
Metal resistor, resistor material and method
A metal resistor and resistor material and method of forming the metal resistor are disclosed. The metal resistor may include an infused metal selected from the group consisting of: copper (Cu)...
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7312130 |
Methods of forming capacitor structures including L-shaped cavities
Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on...
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7309639 |
Method of forming a metal trace with reduced RF impedance resulting from the skin effect
The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to...
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7310595 |
Numerically modeling inductive circuit elements
A method of determining electrical parameters of inductive elements includes a novel technique of inverting an impedance matrix representative of said inductive circuit element. The method reduces...
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7306986 |
Method of making a semiconductor device, and semiconductor device made thereby
A method of making a semiconductor device includes the steps of: providing a semiconductor substrate ( 110, 510, 1010, 1610 ) having a patterned interconnect layer ( 120, 520, 1020, 1620 ) formed...
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7306552 |
Semiconductor device having load resistor and method of fabricating the same
A semiconductor device includes a semiconductor substrate having a resistor region, an isolation layer disposed in the resistor region, the isolation layer defining active regions, first conductive...
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7303970 |
Method of fabricating dielectric mixed layers and capacitive element and use thereof
The present invention provides a method for fabricating a capacitive element ( 100 ), a substrate ( 101 ) being provided as a first electrode layer of the capacitive element ( 100 ), the substrate...
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7303971 |
MSM binary switch memory device
A metal/semiconductor/metal (MSM) binary switch memory device and fabrication process are provided. The device includes a memory resistor bottom electrode, a memory resistor material over the...
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7303974 |
Method for producing electrochemical capacitor electrode
A method is provided for optimizing the physical characteristics of a coating solution for an undercoat layer formed between a polarizable electrode layer and surface-roughened collector. A first...
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7294553 |
Plasma-enhanced chemical vapour deposition process for depositing silicon nitride or silicon oxynitride, process for producing one such layer arrangement, and layer arrangement
A plasma-enhanced chemical vapor deposition process for depositing relatively high dielectric constant silicon nitride or oxynitride to form an MIM capacitor is described. The flow rate ratios for...
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7291537 |
Method for producing solid electrolytic capacitor
The invention provides a method for producing a solid electrolytic capacitor reliable with good LC value after mounting, wherein a solid electrolytic capacitor element comprises an anode body...
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7288460 |
Capacitor having an anodic metal oxide substrate
A structure and method including an anodic metal oxide substrate used to form a capacitor are described herein.
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7288459 |
Organic substrates with integral thin-film capacitors, methods of making same, and systems containing same
An organic substrate, thin-film capacitor composite includes two plates that are accessed through deep and shallow vias. The organic substrate, thin-film capacitor composite includes integral...
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7288453 |
Method of fabricating analog capacitor using post-treatment technique
There is provided a method of fabricating an analog capacitor using a post-treatment technique. The method includes forming a lower insulating layer on a semiconductor substrate. A bottom electrode...
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7285472 |
Low tolerance polysilicon resistor for low temperature silicide processing
Various methods of fabricating a high precision, silicon-containing resistor in which the resistor is formed as a discrete device integrated in complementary metal oxide semiconductor (CMOS)...
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7282420 |
Method of manufacturing a flash memory device
A method of manufacturing a flash memory device wherein a stacked structure of an oxide and nitride or the reverse is applied to insulation spacers provided on sidewalls of gates for forming...
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7282419 |
Thin-film capacitor device, mounting module for the same, and method for fabricating the same
The invention is directed to a thin-film capacitor device that is adapted to be mounted on a printed wiring board together with an LSI device. After forming a plurality of grooves in a core...
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7279391 |
Integrated inductors and compliant interconnects for semiconductor packaging
Some embodiments of the present invention include integrated inductors and compliant interconnects for semiconductor packaging.
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7271055 |
Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors
Methods of forming MIM comprise forming a lower electrode on a semiconductor substrate, forming a lower dielectric layer on the lower electrode, and forming an upper dielectric layer on the lower...
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7271081 |
Metal/ZnOx/metal current limiter
A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method includes the steps of: providing a substrate;...
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7271063 |
Method of forming FLASH cell array having reduced word line pitch
A method of forming a NAND Flash memory device includes forming a control gate polysilicon layer over a substrate, forming a mask layer over the control gate polysilicon layer, the mask layer...
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7268040 |
Method of manufacturing a select transistor in a NAND flash memory
Disclosed herein is a method of manufacturing a flash memory device. According to the present invention, a method of manufacturing a NAND flash memory device having a memory cell and a select...
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7268052 |
Method for reducing soft error rates of memory cells
In one embodiment, a method of fabricating a transistor for a memory cell includes the steps of performing a counter doping implant before or after a source/drain implant. The counter doping...
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7266882 |
Method of manufacturing a miniaturized three- dimensional electric component
Manufacturing of miniaturized three-dimensional electric components are presented, as well as components manufactured by the methods. The manufacturing methods comprise micro-replication of at...
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7264986 |
Microelectronic assembly and method for forming the same
According to one aspect of the present invention, a method is provided for forming a microelectronic assembly. The method comprises forming first and second trenches on a semiconductor substrate,...
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7264974 |
Method for fabricating a low resistance TMR read head
A method is provided for forming a magnetoresistive read head with an MTJ configuration having an ultra-thin tunneling barrier layer with low resistance and high breakdown strength. The barrier...
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7265019 |
Elastomeric CMOS based micro electromechanical varactor
A micro electro-mechanical system (MEMS) variable capacitor is described, wherein movable comb electrodes of opposing polarity are fabricated simultaneously on the same substrate and are...
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7262095 |
System and method for reducing process-induced charging
A semiconductor device includes a substrate, a memory cell formed on the substrate, and a contact to the substrate. The contact is formed in an area away from the memory cell and functions to raise...
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7259076 |
High-density SOI cross-point memory fabricating method
A method for fabricating a high-density silicon-on-insulator (SOI) cross-point memory array and an array structure are provided. The method includes the following steps: selectively forming a hard...
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7259077 |
Integrated passive devices
The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced...
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7256098 |
Method of manufacturing a memory device
A method of making a memory device and a memory device is described. In one embodiment, a method of manufacturing a memory device is described. The method includes providing a substrate having a...
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7256099 |
Method of producing electrochemical device, and the electrochemical device
A first electrode and a second electrode to be used are electrodes each of which has a collector, and a porous material layer with electron conductivity placed between the collector and a...
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