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6001681 |
Method to reduce the depth of a buried contact trench by using a thin split polysilicon thickness
A method of forming buried contacts in MOSFET and CMOS devices which substantially reduces the depth of the buried contact trench. A split polysilicon process is used to form the gate electrode and...
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5994181 |
Method for forming a DRAM cell electrode
A polysilicon layer is subsequently deposited on the dielectric layer by using CVD. Next, photolithography and etching process are used to etch the doped polysilicon layer, and form a bottom...
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5989970 |
Method for fabricating semiconductor device having thin-film resistor
Even when a contact hole is formed before thin-film resistor formation, a contact area exposed in the contact hole is prevented from damaging. A semiconductor element is formed in a silicon...
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5989969 |
Method of producing silicon layer having surface controlled to be uneven
A method of forming a silicon layer disclosed herein includes the steps of depositing an amorphous silicon layer on a substrate, irradiating a silane gas to the substrate, and performing an...
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5985699 |
Method for designing semiconductor integrated circuit
Cells in which clock skew or variation in transistor properties is to be suppressed are specified and inputted. Next, a method of checking unoccupied cells for arranging dummy cells is specified...
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5981349 |
Method of forming semiconducting planar junction termination with high breakdown voltage and low parasitic capacitance
The breakdown voltage of a semiconductor device, such as a transistor fabricated in a device region in and abutting the surface of a semiconductor body with a field oxide surrounding the device...
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5972428 |
Methods and apparatus for material deposition using primer
A liquid primer is misted, flowed into a deposition chamber and deposited on a substrate. A liquid precursor is then misted, flowed into a deposition chamber and deposited on the substrate. The...
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5968209 |
Method for manufacturing a solid electrolytic capacitor
Cathode and anode sides of a plurality of solid electrolytic capacitors are connected by simultaneous electric welding. The welding step is effected to connect an anode lead of a lead frame to the...
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5965219 |
Misted deposition method with applied UV radiation
UV radiation is applied to a substrate in a deposition chamber to desorb water and other contaminates from it. A liquid precursor is misted, flowed into the deposition chamber and deposited on a...
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5953606 |
Method for manufacturing a TFT SRAM memory device with improved performance
A method of forming a contact between a conductor and a substrate region in a MOSFET SRAM starts with forming a dielectric layer on the surface of a partially completed SRAM device with pass and...
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5946566 |
Method of making a smaller geometry high capacity stacked DRAM device
A DRAM having a theoretical cell layout efficiency of 100% and a density of up to four gigabits DRAM is obtained without sacrificing the storage capacitor values. This accomplishment is achieved by...
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5943580 |
Method of forming a capacitor or an inductor on a substrate
High dielectric constant capacitors and/or inductors are formed on a substrate by depositing an amorphous layer (10) of a metal oxide on the substrate (12). A pattern is formed in the metal oxide...
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5943567 |
Method for preparing polysilicon load
A method for fabricating a load device on an SRAM is provided which substantially increases the effective length of its load device without increasing the cell size. This method includes the steps...
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5930637 |
Method of fabricating a microwave inductor
Isolation regions are formed on a top surface of a wafer. An ion implantation is performed to implant ions into the wafer. Then, an thermal anneal process is used to form an implanted layer on the...
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5926716 |
Method for forming a structure
A method for forming a microstructure includes photolithographically forming a vertically extending post on a portion of a surface of a substrate to provide a first structure. A flowable,...
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5926709 |
Process of fabricating miniature memory cell having storage capacitor with wide surface area
A node contact hole is formed in an inter-level insulating layer through an anisotropic etching using an inner conductive side wall formed in a primary opening as an etching mask, and an outer...
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5915188 |
Integrated inductor and capacitor on a substrate and method for fabricating same
An integrated inductor-capacitor (L-C) structure can be formed on a semiconducting substrate (10) by depositing a metal layer in a pattern that contains an inductor coil (14) and a capacitor bottom...
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5912044 |
Method for forming thin film capacitors
Thin film capacitors are formed by a multi-level dry processing method that includes simultaneous ablation of via openings through both the dielectric and the metal electrode layers of a capacitor....
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5893731 |
Method for fabricating low cost integrated resistor capacitor combinations
A low cost method for forming an integrated resistor capacitor combination using only three masks and three mask exposure steps is described. A layer of resistor material is formed on a substrate...
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5885881 |
Planar wave guide cladding
An optical circuit device having a core supported on a substrate incorporates a wave guide being in a layer of the core. The structure is provided with a cladding layer by depositing by means of a...
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5877059 |
Method for forming an integrated circuit resistor comprising amorphous silicon
The device hereof provides an integrated circuit resistor (34) comprising amorphous or noncrystalline semiconducting material. Further advantages can be gained in area by forming the noncrystalline...
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5866463 |
Method of manufacturing a semiconductor apparatus
In a semiconductor apparatus having a PNP bipolar transistor and high voltage resistance, there is formed an oxide insulating layer in the surface region of a P-type semiconductor substrate. In the...
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5854103 |
Manufacturing method of self-aligned silicide load for static random access memory
A self-aligned suicide SRAM load structure and its manufacturing method comprising the steps of providing a semiconductor substrate; then forming a first insulating layer over the substrate and...
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5851868 |
Methods of forming integrated decoupling capacitors
Methods of forming decoupling capacitors include the steps of forming an insulated first capacitor electrode on a first portion of a face of a semiconductor substrate containing a region of first...
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5827764 |
Method for reducing the contact resistance of a butt contact
The present invention provides a method of forming a low contact resistance butt contact 44 between a doped region 30 and a conductive line 16B 18B. The method begins by providing an isolation...
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5789303 |
Method of adding on chip capacitors to an integrated circuit
A capacitor structure and method of forming a capacitor structure for an integrated circuit is provided. The capacitor structure, comprising a bottom electrode, capacitor dielectric and top...
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5770509 |
Method for forming an inductor devices using substrate biasing technique
Methods for foming an inductor devices used for impedance matching in the radio frequency integrated circuits are disclosed. In the integrated inductor device according to the present invention, an...
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5763303 |
Rapid thermal chemical vapor deposition procedure for a self aligned, polycide contact structure
A process for fabricating MOSFET devices, for a SRAM cell, using a polycide contact structure, self-aligned to an underlying source and drain region, has been developed. This process features the...
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5723384 |
Method for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin film
There is provided a method for manufacturing a capacitor in a semiconductor device including the steps of forming first and second insulating layers with a first contact hole through to a...
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5712184 |
Method for manufacturing integrated circuits complete with high Q passive devices
A method for manufacturing integrated circuits complete with integrated low loss capacitances, inductances, and high Q resistors. Initially a large number of monocrystalline--in their lateral and...
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5705438 |
Method for manufacturing stacked dynamic random access memories using reduced photoresist masking steps
A method for manufacturing stacked dynamic random access memory using reduced photomask steps was achieved. The invention utilizes two masking steps for forming the array of stacked capacitors and...
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5705436 |
Method for forming a poly load resistor
A physical implementation and method for achieving it are described for a load resistor and bus line subcircuit such as might be used in an SRAM cell. This was achieved by using two layers of...
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5700731 |
Method for manufacturing crown-shaped storage capacitors on dynamic random access memory cells
A method for manufacturing an array of dynamic random access memory (DRAM) cells having a single crown-shaped or a double crown-shaped stacked capacitors is accomplished. The method involves...
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5700705 |
Semiconductor integrated circuit device
The manufacture of a memory cell of the type employing a pair of cross-coupled CMOS inverters of a SRAM is disclosed in which the load MISFETs are stacked above the semiconductor substrate and over...
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5693570 |
Process for manufacturing a programmable power generation circuit for flash EEPROM memory systems
A process for manufacturing a flash EEPROM system functioning as a mass storage medium for a host computer includes a controller and at least one flash EEPROM memory module. The flash EEPROM memory...
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5652173 |
Monolithic microwave circuit with thick conductors
A monolithic microwave integrated circuit (MMIC) is produced by a method which forms multilevel conductive members, including thick low-loss metallic members. The low-loss metallic members are...
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5639686 |
Method of fabricating circuit elements on an insulating substrate
A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing...
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5597758 |
Method for forming an electrostatic discharge protection device
An ESD protection device and a method for forming the ESD protection device in an active region (13) which is devoid of a field oxide (14). A P type dopant region (22) and an N type dopant region...
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5576224 |
Method for manufacturing a monitor element
A method and structure for sensing data such as temperature with respect to objects such as silicon wafers undergoing fabrication or other processes involve the use of a monitor element of material...
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5550068 |
Process of fabricating a circuit element for transmitting microwave signals
A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing...
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5541135 |
Method of fabricating a flip chip semiconductor device having an inductor
Flip chip bumps (24, 26, and 27) and an inductor (17) are simultaneously fabricated on a semiconductor substrate (10). The fabrication process includes two electroplating steps. The first step...
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5539241 |
Monolithic passive component
An integrated circuit having a monolithic device such as an inductor suspended over a pit in the substrate to reduce parasitic capacitances and enhance the self-resonant frequency of the inductor.
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5492856 |
Method of forming a semiconductor device having a LC element
An LC element with a pn junction layer formed near the surface of a p-Si substrate by forming an n + region having a predetermined shape and in a portion thereof additionally forming a p + ...
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5478773 |
Method of making an electronic device having an integrated inductor
An electronic device (10) comprises a copper integrated inductor (11) overlying other solid state components (31) of the device (10). Preferably, the copper inductor (11) is formed of plated copper...
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5450263 |
Thin film inductors, inductor network and integration with other passive and active devices
The fabrication of thin film inductors on a substrate, which may include thin film resistors, thin film capacitors, and semiconductor devices. In one embodiment an inductor is fabricated initially...
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5445985 |
Method of forming integrated limiter and amplifying devices
Integrated circuit structure and processing is provided for a high power limiter including at least a first anti-parallel array of monolithically integrated Schottky diodes. In a further...
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5387551 |
Method of manufacturing flat inductance element
A method of manufacturing a planar inductance element, including the steps of forming a thermal oxide film, a magnetic film, a first insulating interlayer, a planar coil, and a second insulating...
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5387316 |
Wafer etch protection method
A method of etching a semiconductor wafer includes providing a wafer having a portion thereof to be etched. A highly doped region is formed in the periphery of the wafer which is subsequently...
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5384274 |
Method of making a combined semiconductor device and inductor
A method of making a semiconductor device having formed thereon an inductor comprises a silicon substrate. A cut out region is obtained by removing a part of the silicon substrate in a hollow shape...
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5372967 |
Method for fabricating a vertical trench inductor
A method of forming vertical trench inductor (10) includes providing a layer (11) and forming a plurality of trenches (12) vertically therein. The trenches (12) are filled with a conductive...
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