Matches 501 - 550 out of 634 < 1 2 3 4 5 6 7 8 9 10 11 12 13 >
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6165834 Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell  
The invention comprises methods of forming capacitors, methods of processing dielectric layers, and methods of forming a DRAM cell. In one implementation, a method of processing a dielectric layer...
6165862 Method of producing a thin film resistor  
After a CrSiN film and a TiW film are formed on a substrate through an intermediate insulating layer, a mask pattern is formed on the TiW film. Then a two-step dry etching treatment is performed to...
6162697 High Q inductor realization for use in MMIC circuits  
Methods and structures are disclosed which realize high Q inductors to provide on-chip noise matching of microwave monolithic integrated circuits, such as low noise amplifiers and output matching...
6162671 Method of forming capacitors having high dielectric constant material  
Disclosed is a method of forming storage cell capacitors for use in dynamic random access memories, which comprises, after sequentially depositing a reaction barrier layer and a platinum layer on...
6159817 Multi-tap thin film inductor  
A thin film spiral inductor is formed on a ceramic or other suitable substrate in a manner which facilitates adjustment of the inductive value of the inductor after its fabrication on the...
6153461 Manufacturing method of a dielectric layer for DRAM capacitors  
A manufacturing method of a dielectric layer for a dynamic random-access-memory capacitor comprising, at first, providing a substrate which has a first conductive layer for the capacitor implanting...
6153489 Fabrication method of inductor devices using a substrate conversion technique  
A fabrication method of high performance integrated inductor devices using a substrate conversion technique is disclosed. By employing the trench-shaped porous silicon with high insulating...
6150226 Semiconductor processing methods, methods of forming capacitors, methods of forming silicon nitride, and methods of densifying silicon nitride layers  
In one aspect, the invention includes a method of densifying a silicon nitride layer comprising: after forming the silicon nitride layer, exposing the silicon nitride layer to atomic nitrogen, the...
6150208 DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films  
An exemplary implementation of the present invention includes a capacitor for a dynamic random access memory cell having a first plate; a second plate; and a dielectric layer interposed between...
6150206 Methods of forming integrated circuit capacitors using trench isolation and planarization techniques  
Methods of forming integrated circuit capacitors include the steps of forming a trench in a first electrically insulating layer and then forming a first electrically conductive layer on a sidewall...
6146958 Methods for making VLSI capacitors and high Q VLSI inductors using metal-filled via plugs  
Disclosed are methods of making inductors and capacitors, comprising filling a via in a dielectric disposed between two metal layers with a metal plug. The plug comprises tungsten, aluminum or...
6146938 Method of fabricating semiconductor device  
A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor...
6143614 Monolithic inductor  
The monolithic inductor (30) includes a substrate (38), a spiral metal trace (32) disposed insulatively above the substrate (38), where a parasitic capacitance (56) is generated between the spiral...
6140197 Method of making spiral-type RF inductors having a high quality factor (Q)  
A new method of fabricating an inductor utilizing air as an underlying barrier in the manufacture of integrated circuits is described. A metal line is provided overlying a dielectric layer on a...
6133079 Method for reducing substrate capacitive coupling of a thin film inductor by reverse P/N junctions  
A method for reducing the capacitive coupling of an inductor on an integrated circuit chip is described. The method forms the inductor over an accumulation of dielectric layers used elsewhere in...
6127237 Etching end point detecting method based on junction current measurement and etching apparatus  
A pn junction is formed at a to-be-etched depth in an etching region of a semiconductor body and a reverse bias voltage is applied to the pn junction to form a depletion layer. Then, the...
6121105 Inverted thin film resistor and method of manufacture  
An integrated circuit inverted thin film resistor structure and method of manufacture having interconnect defining resistor contacts and leads resident within and coplanar with a supporting layer,...
6121135 Modified buried contact process for IC device fabrication  
A new method of forming a butted contact and a buried contact having low contact resistance in the fabrication of integrated circuits is described. A first layer of polysilicon is deposited over a...
6121103 Optically transparent, electrically conductive semiconductor windows  
A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a prefabricated semiconductor sheet bonded to a substrate material...
6117721 Semiconductor processing method of forming a static random access memory cell and static random access memory cell  
A semiconductor processing method of forming a static random access memory cell having an n-channel access transistor includes, providing a bulk semiconductor substrate; patterning the substrate...
6117745 Bistable fuse by amorphization of polysilicon  
An embodiment of the instant invention is a method of substantially isolating an electrical device over a semiconductor substrate from a structure which collects charge, the method comprising the...
6117720 Method of making an integrated circuit electrode having a reduced contact area  
A method and an apparatus for manufacturing a memory cell having a non-volatile resistive memory element with a limited size active area. The method comprises a first step of providing a dielectric...
6110773 Static random access memory device manufacturing method  
A static random access memory device includes: a semiconductor substrate divided into a cell array portion and a periphery circuit portion; a first insulating layer for insulating devices formed on...
6107152 Method of forming tungsten nitride comprising layers using NF.sub.3 as a nitrogen source gas  
Methods of forming tungsten-comprising layers are described. In one implementation, a substrate is provided having a surface over which a tungsten-comprising layer is to be formed. A gas plasma is...
6100100 Method for manufacturing capacitor element  
The method of this invention provides a method for manufacturing a capacitor element composed of films. The films have a precise etched shape without a residue that may be generated as a reaction...
6100110 Methods of making thermistor chips  
A thermistor chip is made by first forming first metal layers with a three-layer structure at both end parts of a thermistor block and then forming second metal layers with a three-layer structure...
6093243 Semiconductor device and its fabricating method  
A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin...
6093599 Method of manufacturing inductor device on a silicon substrate thereof  
The present invention relates to a on silicon substrate, specifically to an inductor device and manufacturing method thereof for enhancing the quality factor of the inductor by disposing trenches...
6093601 Method of fabricating crown capacitor by using oxynitride mask  
A method of fabricating a stack crown capacitor of a dynamic random access memory (DRAM) cell by using an oxynitride mask is disclosed. First, a dielectric layer and a silicon nitride layer are...
6087213 Semiconductor memory device and manufacturing method thereof  
A method of making a semiconductor memory device is discussed, which has a long refresh time and offers high reliability by minimizing junction leakage current, resulting in increased charge...
6083802 Method for forming an inductor  
A method for forming an inductor in a semiconductor substrate having a trench therein including the steps of forming a first metal portion in the trench, providing a flowable dielectric material in...
6080613 Methods of forming integrated circuit memory devices having improved bit line and storage electrode contact regions therein  
Methods of forming integrated circuit memory devices, such as DRAM memory cells, include the steps of simultaneously forming storage electrode and bit line contact regions of first conductivity...
6071788 Method of manufacturing a semiconductor device with a conductor film having a polycrystalline structure  
A conductor film is deposited on a semiconductor substrate via an insulation film, and jogs formed on the surface of the conductor film immediately after the deposition are removed by using the...
6063548 Method for making DRAM using a single photoresist masking step for making capacitors with node contacts  
A method for forming stacked capacitors for DRAMs using a single photoresist mask and having bottom electrodes self-aligned to node contacts is achieved. A planar silicon oxide (SiO 2 ) first...
6060759 Method and apparatus for creating improved inductors for use with electronic oscillators  
The present invention relates, in general, to a method and apparatus for creating improved inductors which can be adapted for use with electronic oscillators. The method includes at least the...
6057203 Integrated circuit capacitor  
A capacitor may be formed by implanting after forming a dielectric and a conductive layer over a semiconductor structure. This diminishes the implant damage to the region underneath the conductive...
6057202 Method for manufacturing an inductor with resonant frequency and Q value increased in semiconductor process  
A method for manufacturing an inductor with resonant frequency and Q value increased in semiconductor process can reduce substrate coupling effect, because (an) air layer(s) is/are formed just...
6054360 Method of manufacturing a semiconductor memory device with a stacked capacitor wherein an electrode of the capacitor is shaped using a high melting point metal film  
The method of manufacturing a semiconductor memory device with a stacked capacitor is disclosed. The method is featured by forming an insulating film on semiconductor substrate, forming a high...
6046080 Method of making a load resistor of a static random access memory on a semiconductor wafer  
The present invention relates to a method of making a load resistor of a static random access memory on a dielectric layer of a semiconductor wafer. This method comprises depositing a poly-silicon...
6040226 Method for fabricating a thin film inductor  
A method is provided for the manufacture of precision electronic components such as resistors, inductors, and capacitors on a polymer or ceramic surface. The electronic components can be deposited...
6037235 Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices  
A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a...
6033985 Contact process interconnect poly-crystal silicon layer in thin film SRAM  
A contact process interconnects poly-crystal silicon layer, and more particularly, this process dramatically decreases the voltage drop within a poly-crystal silicon layer. The advantages of the...
6030877 Electroless gold plating method for forming inductor structures  
The present invention provides a method of manufacturing an inductor element 46 using an electroless Au plating solution. The invention has three embodiments for forming the inductor. In the first...
6027967 Method of making a fin-like stacked capacitor  
A method of making a capacitor comprising providing a space extending between a pair of gate stacks on a semiconductor substrate, the space exposing a charge conducting region on the semiconductor...
6022772 Stacked capacitor having a corrugated electrode  
In a semiconductor device, such as a memory cell, including a capacitor, a corrugated electrode is used as a lower electrode of the capacitor and is covered with an insulation film to be opposed to...
6022776 Method of using silicon oxynitride to improve fabricating of DRAM contacts and landing pads  
A method for forming a DRAM cell of a DRAM circuit is disclosed. The DRAM circuit includes a periphery region and a cell region. The DRAM cell is in the cell region and comprises an access...
6015742 Method for fabricating inductor of semiconductor device  
Method for fabricating an inductor on a semiconductor substrate including a cell region in a semiconductor device is disclosed, including the steps of forming impurity diffusion regions having a...
6010939 Methods for making shallow trench capacitive structures  
Disclosed is a capacitive structure and method for making the capacitive structure for suppressing inductive noise produced by high performance device power supplies. The capacitive structure...
6010944 Method for increasing capacity of a capacitor  
The present invention relates to a method for increasing capacity of a capacitor. The method includes forming a polysilicon spacer on sidewall of a first polysilicon electrode and then treating the...
6010940 Methods for fabricating CVD TiN barrier layers for capacitor structures  
A method of fabricating a capacitor for a integrated circuit device includes the steps of forming a lower capacitor electrode on an integrated circuit substrate, and forming a dielectric layer on...
Matches 501 - 550 out of 634 < 1 2 3 4 5 6 7 8 9 10 11 12 13 >