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6326256 |
Method of producing a laser trimmable thin film resistor in an integrated circuit
A thin film resistor processing flow solves the problem of accurately incorporating the resistor (80) to be trimmed in an optimized multilayer stack (60,70). This is achieved by measuring the total...
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6319790 |
Process for fabricating semiconductor device with multiple cylindrical capacitor
A method for making a semiconductor device is provided. In the method, an insulating layer is formed over a semiconductor substrate, and a groove is formed in the insulating layer. Then, a first...
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6316306 |
Memory cell array in a dynamic random access memory and method for fabricating the same
A memory cell array structure of a DRAM is disclosed. The disclosed memory cell array includes at least one active region surrounded with an element isolating insulation layer in a semiconductor...
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6309922 |
Method for fabrication of on-chip inductors and related structure
Method for fabrication of on-chip inductors and related structure are disclosed. According to one embodiment, inductors are formed by patterning conductors within a certain dielectric layer in a...
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6303965 |
Resistor constructions and methods of forming resistor constructions
The invention encompasses resistors comprising a thin layer of dielectric material and methods of forming such resistors. The invention also encompasses integrated circuitry comprising such...
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6303423 |
Method for forming high performance system-on-chip using post passivation process
The present invention extends the above referenced continuation-in-part application by in addition creating high quality electrical components, such as inductors, capacitors or resistors, on a...
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6303455 |
Method for manufacturing capacitor
A method for manufacturing a capacitor is provided in the present invention. The bottom electrode of the capacitor is a polysilicon layer, and the top electrode of the capacitor is a silicide...
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6297084 |
Method for fabricating semiconductor memory
A method for fabricating a semiconductor memory, in which a resistive layer is formed of a material identical to a material of a cell plug layer at a time of formation of the cell plug layer. In...
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6291305 |
Method for implementing resistance, capacitance and/or inductance in an integrated circuit
On-chip resistance, capacitance and/or inductance is implemented in an integrated circuit in vertical configurations using stacked vias and medullization layers within the integrated circuit....
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6291306 |
Method of improving the voltage coefficient of resistance of high polysilicon resistors
A method of forming a high polysilicon resistor over a dielectric layer, comprising the following steps. A polysilicon resistor over a semiconductor structure is provided. The polysilicon resistor...
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6291087 |
Magnetoresistive (MR) sensor element with enhanced resistivity sensitivity and enhanced magnetic exchange bias
A method for forming a magnetoresistive (MR) sensor element, and a magnetoresistive sensor element fabricated in accord with the method. There is first provided a substrate. There is then formed...
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6287932 |
Inductor with magnetic material layers
A spiral inductor fabricated above a semiconductor substrate provides a large inductance while occupying only a small surface area. Including a layer of magnetic material above and below the...
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6287931 |
Method of fabricating on-chip inductor
A method of fabricating an on-chip inductor is disclosed. First, a semiconductor substrate is patterned and etched to form a trench into which an insulating layer is filled. The insulating layer is...
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6287933 |
Semiconductor device having thin film resistor and method of producing same
A semiconductor device having a thin film resistor which comprises at least chromium, silicon and nitrogen, and formed on a substrate with having a special ratio of the chemical composition, the...
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6284618 |
Method of making a semiconductor device having a conductor pattern side face provided with a separate conductive sidewall
It is possible to obtain a semiconductor device in which a contact and a wiring provided on the contact can be electrically connected well even if a shift of superposition is caused. Sidewalls 5a,...
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6284617 |
Metalization outside protective overcoat for improved capacitors and inductors
A thick layer of copper is formed on the outside the protective overcoat (PO) which protects an integrated circuit, and forms both an inductor and the upper electrode of a capacitor. Placing this...
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6281023 |
Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layer
A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top...
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6274388 |
Annealing of a crystalline perovskite ferroelectric cell
A method of fabricating a ferroelectric capacitor usable as a memory cell in a non-volatile integrated circuit memory integrated on a silicon substrate, preferably including an intermetallic...
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6268258 |
Method for fabricating capacitor in semiconductor device
A method for fabricating a capacitor in a semiconductor device, in which oxidization of upper and lower electrodes and wiring films is prevented during annealing a capacitor dielectric film for...
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6265264 |
Method of doping and HSG surface of a capacitor electrode with PH3 under a low temperature/high pressure processing condition
A method of fabricating a capacitor of a semiconductor device maximizes the imurity density of HSG formed at a surface of an electrode of the capacitor and thereby improves capacitance and...
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6261892 |
Intra-chip AC isolation of RF passive components
A method of fabricating an integrated circuit having active components, conductors and isolation regions on a substrate is disclosed, including forming a portion of at least one of the isolation...
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6261893 |
Method for forming a magnetic layer of magnetic random access memory
The present invention relates to a method for forming a magnetic layer of magnetic random access memory. In short, the method comprises following steps: providing a substrate; forming metal...
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6258688 |
Method to form a high Q inductor
A new method is provided for the creation of a high Q inductor. STI trenches are etched for both the active region and the inductor region. The location of the STI region for the inductor is...
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6258652 |
Spiral-shaped inductor structure for monolithic microwave integrated circuits having air gaps in underlying pedestal
An inductor structure having a single crystal body with a spiral shaped pedestal formed in one surface and a ground plane conductor disposed over an opposite surface of the body. A spiral shaped...
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6255185 |
Two step anneal for controlling resistor tolerance
A method of controlling the resistance and improving the low temperature tolerance of a polysilicon resistor is provided. The method of the present invention employs a second annealing step after...
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6251740 |
Method of forming and electrically connecting a vertical interdigitated metal-insulator-metal capacitor extending between interconnect layers in an integrated circuit
A vertical plate capacitor is formed in interlayer dielectric material which separates conductors of upper and lower interconnect layers by a method which avoids the accumulation of residual...
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6249039 |
Integrated inductive components and method of fabricating such components
An inductive component includes a substrate on the surface of which is a lower insulation layer having a shallow concavity or trench, a first plurality of conductive elements formed in the trench,...
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6238968 |
Methods of forming integrated circuit capacitors having protected layers of HSG silicon therein
Integrated circuit capacitors include a U-shaped capacitor electrode on a substrate and an HSG silicon layer extending on an inner surface of the U-shaped capacitor electrode. A HSG protection...
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6232175 |
Method of manufacturing double-recess crown-shaped DRAM capacitor
A double recess crown-shaped DRAM capacitor is formed in a simplified process. A dielectric layer is formed over a substrate. Using photolithographic and etching techniques, a contact opening is...
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6232194 |
Silicon nitride capped poly resistor with SAC process
A new method of forming a polysilicon resistor having precisely controlled resistance by using a thin silicon nitride cap over the polysilicon resistor is described. A dielectric layer is provided...
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6221727 |
Method to trap air at the silicon substrate for improving the quality factor of RF inductors in CMOS technology
A new method of fabricating an inductor utilizing air as an underlying barrier in the manufacturing of integrated circuits is described. A field oxide region is formed in and on a semiconductor...
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6211030 |
Method for fabricating resistors in integrated circuits
A semiconductor fabrication method is provided for fabricating resistors in integrated circuits. This method allows the resistors to be formed with a wider range of resistance values, in contrast...
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6211008 |
Method for forming high-density high-capacity capacitor
A method for fabricating a high-density high-capacity capacitor is described. A dielectric layer is provided overlying a semiconductor substrate. A sacrificial layer is deposited overlying the...
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6207521 |
Thin-film resistor employed in a semiconductor wafer and its method formation
The present invention provides a thin-film resistor positioned on a semiconductor wafer and its method of formation. The thin-film resistor comprises a dielectric layer, a resistance layer, a...
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6204105 |
Method for fabricating a polycide semiconductor device
A method for fabricating a semiconductor device includes the steps of forming a field oxide layer on a field region of a semiconductor substrate where a field region and an active region are...
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6204110 |
Methods of forming an SRAM
A semiconductor processing method of forming a resistor from semiconductive material includes: a) providing a node to which electrical connection to a resistor is to be made; b) providing a first...
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6194248 |
Chip electronic part
The present invention is a chip electronic part having: a ceramic member; a conductor pattern formed on the surface of the ceramic member; an insulating protective layer formed on the conductor...
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6190956 |
Forming a capacitor structure of a semiconductor
A method for forming a capacitor structure of semiconductor is disclosed. The method includes the following steps. First of all, a first oxide layer is deposited. A first nitride layer is formed....
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6190987 |
MOS semiconductor device and method of manufacturing the same
A semiconductor device includes a first diffusion layer, an insulating film, and an electrode. The first diffusion layer is formed on the surface of a first-conductivity-type semiconductor...
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6190986 |
Method of producing sulithographic fuses using a phase shift mask
A method for forming an interconnect wiring structure, such as a fuse structure, comprises forming an opening in an insulating layer using a phase shift mask (the opening having vertical sidewalls...
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6187647 |
Method of manufacturing lateral high-Q inductor for semiconductor devices
A method of forming an inductor for a semiconductor device comprises the steps of forming the bottom legs on a first substrate; depositing a second substrate layer over the first substrate; forming...
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6184044 |
Thin film capacitor including perovskite-type oxide layers having columnar structure and granular structure
The present invention relates to a thin film capacitor that may be used as a stacked capacitor in a memory cell. In a thin film capacitor including a high dielectric constant layer sandwiched by...
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6180482 |
Method for manufacturing high dielectric capacitor
A method for manufacturing a high dielectric capacitor is provided. A capacitor cell unit comprised of an amorphous, high dielectric film which is formed on a semiconductor substrate. Next, the...
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6180445 |
Method to fabricate high Q inductor by redistribution layer when flip-chip package is employed
A new method is provided for the creation of a high Q inductor that can be applied together with the mounting of flip chip semiconductor die on a substrate. The process of the invention starts with...
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6177715 |
Integrated circuit having a level of metallization of variable thickness
An integrated circuit comprising at least one level of metallization, the level of metallization being provided with tracks and comprising metal portions having at least two different thicknesses....
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6177127 |
Method of monitoring emissivity
A method for reliably forming polysilicon of a desired surface roughness includes providing a layer of doped or undoped amorphous silicon on a substrate and heating said substrate while monitoring...
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6171922 |
SiCr thin film resistors having improved temperature coefficients of resistance and sheet resistance
A process for increasing the sheet resistance and lowering the temperature coefficient of resistance of a thin film resistor deposited on a wafer, the process comprising ramping the temperature of...
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6169008 |
High Q inductor and its forming method
A high Q inductor and its forming method is disclosed. In this forming method, a semiconductor substrate is first provided with a trench formed thereon. The trench is defined by dry etching and...
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6169010 |
Method for making integrated circuit capacitor including anchored plug
A method for making an integrated circuit capacitor includes forming an interconnection line adjacent a substrate, forming a first dielectric layer on the interconnection line, forming a first...
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6169305 |
Semiconductor device and method for fabricating the same
The semiconductor device comprises an electrode 36 including a first conductive film 30 formed of an oxide film of a first metal, a second conductive film 32 formed on the first conductive film 30...
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