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7582537 |
Zener diode and methods for fabricating and packaging same
A zener diode and methods for fabricating and packaging same are disclosed, whereby contact hole forming process exposing a diffusion layer is removed to enable to simplify the fabricating process,...
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7582515 |
Multi-junction solar cells and methods and apparatuses for forming the same
Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film...
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7553734 |
Method for forming an avalanche photodiode
Methods for fabricating an avalanche photodiode (APD), wherein the APD provides both high optical coupling efficiency and low dark count rate. The APD is formed such that it provides an active...
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7544557 |
Gate defined Schottky diode
A Schottky diode exhibiting low series resistance is efficiently fabricated using a substantially standard CMOS process flow by forming the Schottky diode using substantially the same structures...
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7510903 |
Transient voltage suppression device
A bi-directional transient voltage suppression (“TVS”) device ( 101 ) includes a semiconductor die ( 201 ) that has a first avalanche diode ( 103 ) in series with a first rectifier diode ( 104...
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7485947 |
Zener diode and method for production thereof
A zener diode circuit includes a semiconductor substrate having an N-doped region and a P-doped region that form a PN junction. The N-doped region and the P-doped region have areas with widths that...
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7474011 |
Method for improved single event latch up resistance in an integrated circuit
A process and system for estimating the occurrence of single event latch-up in an integrated circuit. The process involves determining the resistance between each junction and the closest...
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7384854 |
Method of forming low capacitance ESD robust diodes
A method of forming a diode having a capacitance below 0.1 pF and a breakdown voltage of at least 500V. The method including forming an anode of a first conductivity type and a cathode of a second...
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7341921 |
Photodiode
The invention provides a method of manufacturing an avalanche diode comprising the steps of applying a mask ( 6 ) over an active diode region ( 5 ) in a wafer ( 1 ), and damaging the region the...
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7309638 |
Method of manufacturing a semiconductor component
A semiconductor component comprises a first semiconductor region ( 110, 310 ), a second semiconductor region ( 120, 320 ) above the first semiconductor region, a third semiconductor region ( 130,...
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7303969 |
Method of making interband tunneling diodes
Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers...
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7238582 |
Semiconductor device and process of producing the same
The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature...
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7056761 |
Avalanche diode with breakdown voltage controlled by gate length
In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and...
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6939728 |
Method of fabricating silicon emitter with a low porosity heavily doped contact layer
A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer...
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6930009 |
Laser synthesized wide-bandgap semiconductor electronic devices and circuits
A laser apparatus and methods are disclosed for synthesizing areas of wide-bandgap semiconductor substrates or thin films, including wide-bandgap semiconductors such as silicon carbide, aluminum...
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6927141 |
Process for forming fast recovery diode with a single large area P/N junction
A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide...
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6900093 |
Method of fabricating a zener diode chip for use as a shunt in Christmas tree lighting
A process for fabricating Zener diodes that does not require the use of photomasks. An oxide layer is grown on a silicon substrate which is doped with an N-type dopant. The substrate is...
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6869855 |
Method for making electrode pairs
The present invention is a method for introducing a low work function material into a pair of matched electrodes. The method involves fabricating a composite of two electrodes and a low work...
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6855587 |
Gate-controlled, negative resistance diode device using band-to-band tunneling
A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a...
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6838691 |
Chalcogenide memory and method of manufacturing the same
A method of manufacturing chalcogenide memory in a semiconductor substrate. The method includes the steps of forming a N+ epitaxy layer on the semiconductor substrate; forming a N− epitaxy layer...
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6797581 |
Avalanche photodiode for photon counting applications and method thereof
A method for manufacturing an improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided...
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6774460 |
IMPATT diodes
The present invention relates to an impact ionisation avalanche transit time (IMPATT) diode device comprising an avalanche region and a drift region, wherein at least one narrow bandgap region,...
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6774003 |
Method for making a diode device
A method for manufacturing a pair of electrodes comprises fabricating a first electrode with a substantially flat surface and placing a sacrificial layer over a surface of the first electrode,...
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6743652 |
Method for making an integrated circuit device including photodiodes
Fast and efficient photodiodes with different structures are fabricated using CMOS process technology by adapting transistor structures to form the diode structures. The anode regions of the...
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6716714 |
Semiconductor diode and method for producing the same
A semiconductor arrangement and a method for manufacturing the semiconductor arrangement are provided, which arrangement and method allow an improvement in the current-carrying capacity for given...
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6706606 |
Buried zener diode structure and method of manufacture
A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode...
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6653195 |
Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of...
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6552413 |
Diode
Implemented is a diode which controls an energy loss produced during a reverse recovery operation and generates an oscillation of an applied voltage with difficulty even if a reverse bias voltage...
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6551892 |
Process for the manufacture of integrated devices with gate oxide protection from manufacturing process damage, and protection structure therefor
A manufacturing process providing a zener diode formed in an N-type well housing a first N-type conductive region and having a doping level higher than the well, and a second P-type conductive...
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6514832 |
Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn diode and structure for assembly of the same
A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first...
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6492239 |
Method for fabricating avalanche photodiode
An avalanche photodiode fabricating method with a simplified fabrication process and an improved reproducibility is disclosed. The method for fabricating an avalanche photodiode includes the steps...
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6436785 |
Method of manufacturing semiconductor device with a tunnel diode
A semiconductor device with a tunnel diode comprises two mutually adjoining semiconductor regions ( 2, 3 ) of opposed conductivity types having high enough doping concentrations to provide a...
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6436784 |
Method of forming semiconductor structure
Semiconductor structures and a method of forming semiconductor structures The avalanche breakdown characteristics, such as breakdown voltage and impact ionisation coefficient, of a semiconductor...
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6368932 |
Method for producing diodes
A method is proposed that functions to produce Zener diodes. The method includes a two-part film diffusion step for producing flatter and deeper doping profiles using neutral films.
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6306717 |
Method of manufacturing an avalanche diode with an adjustable threshold
The present invention relates to a method of manufacturing an avalanche diode of determined threshold in a substrate of a first conductivity type with a low doping level, including the steps of...
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6204110 |
Methods of forming an SRAM
A semiconductor processing method of forming a resistor from semiconductive material includes: a) providing a node to which electrical connection to a resistor is to be made; b) providing a first...
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6197649 |
Process for manufacturing planar fast recovery diode using reduced number of masking steps
A fast recovery diode (FRED) is fabricated by a process using a reduced number of masking steps. The FRED is a vertical conduction device in which P type anode regions are isolated using either...
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6174750 |
Process for fabricating a drift-type silicon radiation detector
In a process for fabricating a radiation detector comprising the step of drifting lithium from one side of a silicon wafer, a boron diffusion layer is formed on the other side of the silicon wafer...
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6117745 |
Bistable fuse by amorphization of polysilicon
An embodiment of the instant invention is a method of substantially isolating an electrical device over a semiconductor substrate from a structure which collects charge, the method comprising the...
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6085396 |
Manufacturing method for rectifying diodes
A manufacturing method for rectifying diodes, wherein, a plurality of upper and lower pins are combined with a plurality of electronic chips to form a coarse blank. And then they are processed to...
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5943578 |
Method of manufacturing a semiconductor device having an element isolating region
The first trench is formed in the region of the semiconductor substrate, in which an element isolation region is to be formed, and the first buried member, which is insulative, is buried in the...
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5940700 |
Method for fabricating a semiconductor diode with BCD technology
A diode integrated on semiconductor material with BCD technology and of the type provided on a substrate having a first type of conductivity inside an isolation region having a second type of...
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5915187 |
Method of manufacturing a semiconductor device with a pn junction provided through epitaxy
The invention relates to a method of manufacturing a semiconductor device with a pn junction, whereby an epitaxial layer (2) with a first zone (3) of a first conductivity type and with a second...
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5858808 |
Process and auxiliary device for fabricating semiconductor devices
An auxiliary device is constituted by a U-bolt-shaped, pincer-like implement which, during the fabrication of semiconductor devices with a mesa structure from a starting substrate forming a wafer,...
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5804470 |
Method of making a selective epitaxial growth circuit load element
A method of manufacturing a polysilicon plug in an integrated circuit semiconductor device wherein the polysilicon plug is selectively doped to act as a resistive load or alternatively to act as a...
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5541140 |
Semiconductor arrangement and method for its manufacture
Semiconductor arrangements, in particular diodes, have a p-layer and two n-layers that are doped to varying degrees of thickness. The p-n junction between the p-layer and the heavily doped n-layer...
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5529952 |
Method of fabricating lateral resonant tunneling structure
A resonant tunneling diode (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched into a transverse quantum well (410) and defining a...
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5514608 |
Method of making lightly-doped drain DMOS with improved breakdown characteristics
An LDD lateral DMOS transistor is provided in a lightly-doped epitaxial layer of a first conductivity above a substrate of the same conductivity. A highly-doped buried layer of the first...
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5418181 |
Method of fabricating diode using grid recess
Method of fabricating semiconductor devices includes forming an operation layer for forming elements on a first principal plane of a semiconductor substrate; forming a grid recess for separating...
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5385636 |
Method of forming a metal contact on a projection on a semiconductor substrate
A metal contact is formed by etching a metal film that is locally protected by a spot of photosensitive resin. Thereafter the resin is caused to flow in the presence of vapor of a solvent for the...
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