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8173891 Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps  
Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular...
8101968 Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device  
A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a...
8101959 Light emitting device  
An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to...
8090229 Method and device for providing electronic circuitry on a backplate  
A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a...
8067687 High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters  
A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy...
8049242 Optoelectronic device  
An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer,...
8030639 Nitride semiconductor light emitting device and fabrication method thereof  
Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped...
8019186 Photonic crystal circuit comprising a guided mode adapter and optical system including said circuit coupled with an optical fiber  
The invention relates to a photonic crystal circuit comprising a guide produced in a photonic crystal membrane on the surface of a substrate and a mode adapter coupled to said guide, wherein the...
7964419 Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method  
A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as...
7956380 Semiconductor light-emitting device  
A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag...
7955875 Forming light emitting devices including custom wavelength conversion structures  
Methods of forming a light emitting device include selectively forming a wavelength conversion structure on a light emitting element using stereolithography. Selectively forming the wavelength...
7901960 Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device  
A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a...
7884466 Semiconductor device with double-sided electrode structure and its manufacturing method  
According to the present invention, a recess portion is formed in a package substrate which is formed of a multilayer organic substrate having a multilayer wiring, and an LSI chip is accommodated...
7875470 Method of forming buffer layer for nitride compound semiconductor light emitting device and nitride compound semiconductor light emitting device having the buffer layer  
A method of forming a buffer layer for a nitride compound semiconductor light emitting device includes placing a sapphire (Al2O3) substrate in a reaction chamber; introducing a nitrogen source gas...
7850501 Light-emitting device and method for manufacturing light-emitting device  
Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques...
7839075 Organic electroluminescent element, illuminator and display  
An organic electroluminescent element containing an anode and a cathode having therebetween a light emitting layer containing a phosphorescent compound, and hole blocking layer 1 provided adjacent...
7825417 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers  
A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and...
7815813 End point detection method, end point detection device, and gas phase reaction processing apparatus equipped with end point detection device  
An end point detection method in the case where a catalyst arranged in a treatment chamber of a gas phase reaction processing apparatus is heated at high temperature by supplying electric power...
7816695 Light emitting device and method of forming the same  
An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to...
7800117 Pixel structure for a solid state light emitting device  
A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited...
7794798 Method for depositing films using gas cluster ion beam processing  
A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and...
7795050 Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same  
A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues...
7767479 Quantum photonic imagers and methods of fabrication thereof  
Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can...
7767480 Method for semiconductor compositional grading to realize low-resistance, distributed Bragg reflectors  
A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is...
7759142 Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains  
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel...
7754504 Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode  
A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V...
7750338 Dual-SiGe epitaxy for MOS devices  
A semiconductor includes a semiconductor substrate, a gate stack on the semiconductor substrate, and a stressor having at least a portion in the semiconductor substrate and adjacent to the gate...
7623560 Quantum photonic imagers and methods of fabrication thereof  
Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can...
7615773 Semiconductor light-emitting device and manufacturing method thereof  
A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer;...
7605011 Semiconductor device and a method of manufacturing a semiconductor device  
A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at...
7589347 Method for fabricating lateral semiconductor device  
A lateral junction semiconductor device and method for fabricating the same comprising the steps of taking a semiconductor structure having a stack formed by a plurality of layers of semiconductor...
7575944 Method of manufacturing nitride-based semiconductor light emitting diode  
Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor...
7544525 AllnGaP LED having reduced temperature dependence  
To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where...
7537950 Nitride-based light emitting heterostructure  
An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light...
7521269 Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same  
A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues...
7511314 Light emitting device and method of fabricating the same  
Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90)...
7508011 Semiconductor light generating device  
The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this...
7501666 Method for forming p-type semiconductor region, and semiconductor element  
A substrate 103 is set in a film-forming apparatus, such as a metal organic vapor phase epitaxy system 101, and a GaN buffer film 105, an undoped GaN film 107, and a GaN film 109 containing a...
7495314 Ohmic contact on p-type GaN  
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type...
7495264 Semiconductor device with high dielectric constant insulating film and manufacturing method for the same  
A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the...
7482183 Light emitting diode with degenerate coupling structure  
An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at...
7479658 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers  
A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and...
7449353 Co-doping for fermi level control in semi-insulating Group III nitrides  
Semi-insulating Group III nitride layers and methods of fabricating semi-insulating Group III nitride layers include doping a Group III nitride layer with a shallow level p-type dopant and doping...
7399657 Ball grid array packages with thermally conductive containers  
Ball grid array packages for semiconductor die include a thermally conductive container and a substrate that substantially enclose a semiconductor die. The die is positioned with respect to the...
7368308 Methods of fabricating semiconductor heterostructures  
Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by...
7364697 System for infrared spectroscopic imaging of libraries  
Methods and apparatus for screening diverse arrays of materials using infrared imaging techniques are provided. Typically, each of the individual materials on the array will be screened or...
7271021 Light-emitting device with a current blocking structure and method for making the same  
A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure...
7259036 Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products  
Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such...
7224882 Optical materials with selected index-of-refraction  
Photosensitive optical materials are used for establishing more versatile approaches for optical device formation. In some embodiments, unpatterned light is used to shift the index-of-refraction of...
7214598 Formation of lattice-tuning semiconductor substrates  
In order to reduce dislocation pile-ups in a virtual substrate, a buffer layer 32 is provided, between an underlying Si substrate 34 and an uppermost constant composition SiGe layer 36, which...
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