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7611950 Method for forming shallow trench isolation in semiconductor device  
A method for forming shallow trench isolation in a semiconductor device. The method includes forming a pad oxide and a pad nitride on a semiconductor substrate in successive order, forming a trench...
7595253 Method of forming the semiconductor device  
Example embodiments provide a semiconductor device and a method of forming the same. According to the method, a capping insulation pattern may be formed to cover the top surface of a filling...
7579664 Semiconductor device with trench type device isolation layer and method for fabricating the same  
Disclosed are a semiconductor device with a device isolation structure and a method for fabricating the same. The method includes the steps of: forming a plurality of trenches defining first active...
7541298 STI of a semiconductor device and fabrication method thereof  
A method for filling silicon oxide materials into a trench includes providing a substrate having a plurality of trenches, performing a first deposition process to form a first silicon oxide layer...
7514715 Angled implant for trench isolation  
A trench isolation having a sidewall and bottom implanted region located within a substrate of a first conductivity type is disclosed. The sidewall and bottom implanted region is formed by an...
7498233 Method of forming an insulation layer structure having a concave surface and method of manufacturing a memory device using the same  
A method of forming an isolation layer structure for a semiconductor device includes forming a first structure on a substrate, the first structure including an insulation layer pattern having a...
7485943 Dielectric isolation type semiconductor device and manufacturing method therefor  
A dielectric isolation type semiconductor device includes a dielectric isolation type substrate in which a support substrate, an embedded dielectric layer, and a first conductive type semiconductor...
7429505 Method of fabricating fin field effect transistor using isotropic etching technique  
Methods of fabricating a fin field effect transistor (FinFET) are disclosed. Embodiments of the invention provide methods of fabricating FinFETs by optimizing a method for forming the fin so that a...
7354812 Multiple-depth STI trenches in integrated circuit fabrication  
Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause...
7344949 Non-volatile memory device and method of fabricating the same  
A method of fabricating an a non-volatile memory includes forming trench isolation regions in an inactive region of a semiconductor substrate, adjacent trench isolation regions defining respective...
7279381 Method for fabricating cell transistor of flash memory  
A method for fabricating a cell transistor of a flash memory including a device isolation film is disclosed, to prevent the mouse bite and the residue of a gate electrode, which includes the steps...
7247534 Silicon device on Si:C-OI and SGOI and method of manufacture  
A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a...
7172914 Method of making uniform oxide layer  
A method of forming a semiconductor structure includes forming an isolation region in a semiconductor substrate. A first oxide layer is on the substrate, a first sacrificial layer is on the first...
7157324 Transistor structure having reduced transistor leakage attributes  
Undesirable transistor leakage in transistor structures becomes greatly reduced in substrates having a doped implant region formed via pulling back first and second layers of a process stack. A...
7153733 Method of fabricating fin field effect transistor using isotropic etching technique  
Methods of fabricating a fin field effect transistor (FinFET) are disclosed. Embodiments of the invention provide methods of fabricating FinFETs by optimizing a method for forming the fin so that a...
7153731 Method of forming a field effect transistor with halo implant regions  
A method of forming a field effect transistor includes forming a channel region within bulk semiconductive material of a semiconductor substrate. Source/drain regions are formed on opposing sides...
7151035 Semiconductor device and manufacturing method thereof  
A sidewall-insulation film 9 is provided on a side surface of a first opening portion 8 a formed in a base extraction electrode 5 B of a hetero-junction bipolar transistor, and a portion of...
7141478 Multi-stage EPI process for forming semiconductor devices, and resulting device  
The present invention is generally directed to a multi-stage epi process for forming semiconductor devices, and the resulting device. In one illustrative embodiment, the method comprises forming a...
7125780 Dielectric isolation type semiconductor device and method for manufacturing the same  
A dielectric isolation type semiconductor device and a manufacturing method therefor achieve high dielectric resistance while preventing the dielectric strength of the semiconductor device from...
7118981 Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor  
In a method of fabricating an integrated silicon-germanium heterobipolar transistor a silicon dioxide layer arranged between a silicon-germanium base layer and a silicon emitter layer is formed by...
7087498 Method for controlling trench depth in shallow trench isolation features  
A method for forming a trench in a semiconductor silicon substrate. An anti-reflective coating layer and a photoresist layer are formed over the substrate and patterned in accordance with a...
7037798 Bipolar transistor structure with self-aligned raised extrinsic base and methods  
The invention includes methods of fabricating a bipolar transistor that adds a silicon germanium (SiGe) layer or a third insulator layer of, e.g., high pressure oxide (HIPOX), atop an emitter cap...
6984553 Method for forming shallow trench isolation with control of bird beak  
In a manufacturing method for a shallow trench isolation, first, a multi-layer structure is formed over a semiconductor substrate. A first trench is formed in the multi-layer structure to define an...
6974755 Isolation structure with nitrogen-containing liner and methods of manufacture  
A semiconductor isolation trench includes a substrate and a trench formed therein. The trench is lined with a nitrogen-containing liner and filled with a dielectric material. The...
6964907 Method of etching a lateral trench under an extrinsic base and improved bipolar transistor  
In a BJT, the extrinsic base to collector capacitance is reduced by forming a lateral trench between the extrinsic base region and collector. This is typically done by using an anisotropic wet etch...
6955957 Method of forming a floating gate in a flash memory device  
Disclosed is a method of forming the floating gate in the flash memory device. After the first polysilicon film is deposited on the semiconductor substrate, the trench is formed on the first...
6943088 Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding  
In a trench isolation structure of a semiconductor device, oxide liners are formed within the trenches, wherein a non-oxidizable mask is employed during various oxidation steps, thereby creating...
6933238 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor element of the present invention includes the steps of: forming, on a substrate, a protection oxide film, a nitride film, an insulation film for...
6921704 Method for improving MOS mobility  
A method of forming a silicon-on-insulator semiconductor device including providing a substrate and forming a trench in the substrate, wherein the trench includes opposing side walls extending...
6900105 Semiconductor device and method of manufacture  
In a semiconductor manufacturing method, an emitter region ( 211 ) and a base enhancement region ( 207 ) are formed to provide linear voltage, capacitance and low resistance characteristics. In the...
6900090 Semiconductor device having a trench isolation structure and method for fabricating the same  
A device isolation structure in a semiconductor device and a method for fabricating the same are disclosed. A trench is formed in a semiconductor substrate to confine a plurality of active regions,...
6884687 SEMICONDUCTOR PROCESSING METHODS OF FORMING INTEGRATED CIRCUITRY, FORMING CONDUCTIVE LINES, FORMING A CONDUCTIVE GRID, FORMING A CONDUCTIVE NETWORK, FORMING AN ELECTRICAL INTERCONNECTION TO A NODE LOCATION, FORMING AN ELECTRICAL INTERCONNECTION WITH A TRANSISTOR SOURCE/DRAIN REGION, AND INTEGRATED CIRCUITRY  
In one aspect, the invention provides a method of forming an electrical connection in an integrated circuitry device. According to one preferred implementation, a diffusion region is formed in...
6878605 Methods for manufacturing SOI substrate using wafer bonding and complementary high voltage bipolar transistor using the SOI substrate  
A method of manufacturing an SOI substrate for semiconductor devices is described. The method includes forming a low density impurity region in a first semiconductor substrate and a high density...
6869852 Self-aligned raised extrinsic base bipolar transistor structure and method  
A method of fabricating a bipolar transistor structure that provides unit current gain frequency (f T ) and maximum oscillation frequency (f MAX ) improvements of a raised extrinsic base using...
6825086 Strained-silicon channel CMOS with sacrificial shallow trench isolation oxide liner  
A strained-silicon (Si) channel CMOS device shallow trench isolation (STI) oxide region, and method for forming same have been provided. The method comprises: forming a Si substrate; forming a...
6803259 Silicon controlled rectifier for sige process, manufacturing method thereof and integrated circuit including the same  
A silicon controlled rectifier for SiGe process. The silicon controlled rectifier comprises a substrate, a buried layer of a first conductivity type in the substrate, a well of the first...
6794251 Method of making a power semiconductor device  
A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first or second conductivity type and then forming a voltage sustaining region on the...
6770523 Method for semiconductor wafer planarization by CMP stop layer formation  
A method of manufacturing an integrated circuit is provided having a semiconductor wafer. A chemical-mechanical polishing stop layer is deposited on the semiconductor wafer and a first photoresist...
6764922 Method of formation of an oxynitride shallow trench isolation  
An oxynitride material is used to form shallow trench isolation regions in an integrated circuit structure. The oxynitride may be used for both the trench liner and trench fill material. The...
6753234 Method of forming the silicon germanium base of a bipolar transistor  
The intrinsic base region of a bipolar transistor is formed to avoid a chemical interaction between the chemicals used in a chemical mechanical polishing step and the materials used to form the...
6746936 Method for forming isolation film for semiconductor devices  
The present invention relates to a method for forming an isolation film for semiconductor devices. This method comprises the steps of: successively forming a first oxide film and a nitride film on...
6709924 Fabrication of shallow trench isolation structures with rounded corner and self-aligned gate  
For fabricating a shallow trench isolation structure, a notched masking structure is formed over an active area of a semiconductor substrate. A shallow trench opening is formed at a side of the...
6653203 Thin sidewall multi-step HDP deposition method to achieve completely filled high aspect ratio trenches  
A multi-step HDP deposition and sputtering process for void-free filling of high aspect ratio trenches and for trenches having stepped cross-sectional profiles. The method is particularly...
6627506 Thin tensile layers in shallow trench isolation and method of making same  
The present invention relates to a method of forming an isolation trench that comprises forming a recess in a substrate and forming a film upon the sidewall under conditions that cause the film to...
6599811 Semiconductor device having a shallow isolation trench  
A method for forming a semiconductor device having an isolation trench for separation of element regions includes the steps of forming a pad oxide film and a silicon nitride film on a silicon...
6596608 Method of manufacturing non-volatile semiconductor memory device  
To provide a method for producing a non-volatile semiconductor memory device that can form trenches having different depths in a reduced number of processes. A method for producing a non-volatile...
6596607 Method of forming a trench type isolation layer  
A method of forming a trench type isolation layer is provide, wherein the method comprises: forming a trench by etching after forming a trench etching pattern on a substrate; forming a silicon...
6579777 Method of forming local oxidation with sloped silicon recess  
A method of forming a localized oxidation having reduced bird's beak encroachment in a semiconductor device by providing an opening in the silicon substrate that has sloped sidewalls with a taper...
6576522 Methods for deuterium sintering  
A method for deuterium sintering to improve the hot carrier aging of an integrated circuit includes (a) providing a partially fabricated integrated circuit structure comprising a semiconductor...
6562694 Method of manufacturing a semiconductor device comprising semiconductor elements formed in a toplayer of a silicon wafer situated on a buried insulating layer  
A method of manufacturing a semiconductor device including semiconductor elements having semiconductor zones ( 17, 18, 24, 44, 45 ) formed in a top layer ( 4 ) of a silicon wafer ( 1 ) situated on...
Matches 1 - 50 out of 163 1 2 3 4 >