Matches 1 - 37 out of 37
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7611954 Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same  
A self-aligned bipolar transistor structure having a raised extrinsic base comprising an outer region and an inner region of different doping concentrations and methods of fabricating the...
7541249 Process for producing a base connection of a bipolar transistor  
A process for producing a base connection of a bipolar transistor is provided. The process includes the steps of providing a semiconductor structure that can include a three-dimensional sacrificial...
7399675 Electronic device including an array and process for forming the same  
An electronic device can include an NVM array, wherein portions of word lines are formed within trenches. Insulating features are formed over heavily doped regions within the substrate. In one...
7378324 Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same  
Bipolar transistors and methods of forming the bipolar transistors. The method including forming a P-type collector in a silicon substrate; forming an intrinsic base on the collector, the intrinsic...
7291536 Fabricating a self-aligned bipolar transistor having increased manufacturability  
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a base oxide layer situated on top surface of the base....
7282418 Method for fabricating a self-aligned bipolar transistor without spacers  
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a sacrificial post situated on the top surface of the...
7276442 Method for forming a metallization layer  
A method for depositing metal on a semiconductor device having a substrate, an exposed first surface, and an exposed second surface is provided. Metal ions are deposited on the exposed first...
7247530 Ultrathin SOI transistor and method of making the same  
A method of fabricating an ultrathin SOI memory transistor includes preparing a substrate, including forming an ultrathin SOI layer of the substrate; adjusting the threshold voltage of the SOI...
7022578 Heterojunction bipolar transistor using reverse emitter window  
A heterojunction bipolar transistor (HBT), and manufacturing method therefor, comprising a semiconductor substrate having a collector region, an intrinsic base region of a compound semiconductive...
6894328 Self-aligned bipolar transistor having recessed spacers and method for fabricating same  
According to one exemplary embodiment, a bipolar transistor includes a base having a top surface. The bipolar transistor further includes a first link spacer and a second link spacer situated on...
6881640 Fabrication method for heterojunction bipolar transistor  
A fabrication method for heterojunction bipolar transistor is disclosed. The method uses ISSG oxide instead of conventional PECVD oxide so that the base/emitter interface damage can be reduced....
6869853 Fabrication of a bipolar transistor using a sacrificial emitter  
In one embodiment, a transistor is fabricated by forming a sacrificial emitter over a base, forming an oxide layer over the sacrificial emitter, removing a portion of the oxide layer, and then...
6867080 Polysilicon tilting to prevent geometry effects during laser thermal annealing  
A method is provided for eliminating uneven heating of substrate active areas during laser thermal annealing (LTA) due to variations in gate electrode density. Embodiments include adding dummy...
6818520 Method for controlling critical dimension in an HBT emitter  
According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base. The heterojunction bipolar transistor further comprises a first nitride spacer and a second nitride...
6812107 Method for improved alignment tolerance in a bipolar transistor  
According to one exemplary embodiment, a method for fabricating a bipolar transistor, such as a heterojunction bipolar transistor (“HBT”), comprises fabricating a first inner spacer and a...
6790722 Logic SOI structure, process and application for vertical bipolar transistor  
A method and structure for forming an emitter in a vertical bipolar transistor includes providing a substrate having a collector layer and a base layer over the collector layer, forming a...
6777302 Nitride pedestal for raised extrinsic base HBT process  
A method of fabricating a high-performance, raised extrinsic base HBT having a narrow emitter width is provided. In accordance with the method, a patterned nitride pedestal region and inner spacers...
6716711 Method for fabricating a self-aligned emitter in a bipolar transistor  
In one disclosed embodiment, a silicon-germanium base is formed, which includes an extrinsic base region, a link base region, and an intrinsic base region. An etch stop layer, which can be silicon...
6680235 Method for fabricating a selective eptaxial HBT emitter  
According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises an epitaxial emitter...
6639257 Hetero-junction bipolar transistor having a dummy electrode  
A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a...
6617220 Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base  
An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic...
6569744 Method of converting a metal oxide semiconductor transistor into a bipolar transistor  
The present invention provides a method of manufacturing a bipolar transistor. The method includes producing an opening in a dielectric layer located over a substrate and forming a collector in the...
6551889 Method of producing a SI-GE base heterojunction bipolar device  
A method of producing a bipolar transistor includes the step of providing a sacrificial mesa over a layer of SiGe in order to prevent a polysilicon covering layer from forming over a predetermined...
6482697 Method of forming a highly integrated non-volatile semiconductor memory device  
The present invention provides a method of forming a gate structure of a floating gate MOS field effect transistor. The method comprises the steps of: forming a conductive layer on a gate...
6465317 Process for producing a bipolar transistor with self-aligned emitter and extrinsic base  
A transistor manufacturing process includes the formation, on a layer ( 15 ) that will form the base of the transistor, of a stack of an SiGe alloy layer ( 16 ), a silicon oxide layer ( 17 ) and a...
6444536 Method for fabricating bipolar transistors  
In accordance with the invention, a bipolar transistor is fabricated by disposing a sacrificial layer over the conventional semiconductor workpiece. The sacrificial layer is patterned into a stripe...
6372594 Fabrication method of submicron gate using anisotropic etching  
Disclosed is a method for fabricating a self-aligned submicron gate electrode using an anisotropic etching process. The method involves the steps of laminating a dummy emitter defining a dummy...
6323075 Method of fabricating semiconductor device  
Disclosed is a method of fabricating a semiconductor device in which at least an LDD type insulated-gate field effect transistor and a bipolar transistor are formed on a common base substrate. An...
6265276 Structure and fabrication of bipolar transistor  
A complementary bipolar transistor device, made of two separate conductive films such as two highly doped polysilicon films of opposite conductivity types. The doped polysilicon film is used for a...
6153919 Bipolar transistor with polysilicon dummy emitter  
A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped...
5994194 Self-aligned base ohmic metal for an HBT device cross-reference to related applications  
A relatively simple method for providing relatively close spacing between the emitter mesa and the base ohmic metal of a heterojunction bipolar transistor (HBT) on a relatively uniform basis. An...
5821149 Method of fabricating a heterobipolar transistor  
A method of fabricating an HBT using differential epitaxy. By using an emitter mask and an exside-inside spacer structure, a self-aligned fabrication of an emitter contact and a base contact is...
5804487 Method of fabricating high βHBT devices  
A method for controlling the spacing between the emitter mesa and the base ohmic metal of a heterojunction bipolar transistor (HBT) to obtain a relatively high gain (β) with a low-parasitic base...
5804476 Method of forming BiCMOS devices having mosfet and bipolar sections therein  
A BiCMOS device and a manufacturing method thereof according to the present invention has a gate insulating layer of NMOSFET having non-uniform thickness. The thickness of the end portion of the...
5362658 Method for producing semiconductor device  
A method for producing a semiconductor device includes growing a collector layer, a base layer, and an emitter layer on a substrate; forming an emitter electrode, a tungsten film, and a silicon...
5166081 Method of producing a bipolar transistor  
A dummy emitter is formed in the portion corresponding to an emitter region, on a multiplayer structural material comprising layers for forming emitter, base and collector, and using it as mask, an...
5093272 Manufacturing method for a self-aligned emitter-base-complex for heterobipolar transistors  
Method for manufacturing a self-aligned emitter-base complex whereby a sequence of epitaxial layers, which corresponds to the optimal base-emitter layer sequence in the re-etched part of the...
Matches 1 - 37 out of 37