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9029229 Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions  
Disclosed are devices and methods of forming the devices wherein pair(s) of first openings are formed through a dielectric layer and a first semiconductor layer into a substrate and, within the...
8999804 Methods for fabricating a bipolar junction transistor with self-aligned terminals  
Fabrication methods for a bipolar junction transistor. A semiconductor material layer is formed on a substrate and a mask layer is formed on the semiconductor material layer. The mask layer is...
8962461 GaN HEMTs and GaN diodes  
Consistent with an example embodiment, a GaN heterojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot,...
8927381 Self-aligned bipolar junction transistors  
Device structures, fabrication methods, and design structures for a bipolar junction transistor. An intrinsic base is formed on the substrate, a terminal is formed on the intrinsic base, and an...
8877574 Elemental semiconductor material contact for high electron mobility transistor  
Portions of a top compound semiconductor layer are recessed employing a gate electrode as an etch mask to form a source trench and a drain trench. A low temperature epitaxy process is employed to...
8871581 Enhancement mode III-nitride FET  
A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface...
8871599 Method of manufacturing IC comprising a bipolar transistor and IC  
Disclosed is an integrated circuit and a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate comprising a pair of isolation...
8866189 Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof  
A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, including: a substrate; two field oxide regions formed in the substrate; two pseudo buried layers, each being...
8853043 Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)  
A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried...
8846481 Transistor and method of forming the transistor so as to have reduced base resistance  
Disclosed is a transistor structure, having a completely silicided extrinsic base for reduced base resistance Rb. Specifically, a metal silicide layer covers the extrinsic base, including the...
8841673 Thin-film transistor device and method for manufacturing thin-film transistor device  
A thin-film transistor device includes: a gate electrode above a substrate; a gate insulating film on the gate electrode; a crystalline silicon thin film above the gate insulating film; a first...
8809912 Epitaxial base layers for heterojunction bipolar transistors  
An exemplary embodiment of the present invention provides a heterojunction bipolar transistor comprising an emitter, a collector, and a base. The base can be disposed substantially between the...
8810038 Semiconductor device and wiring board  
A semiconductor device includes: a board; a power wire formed on the board; a signal wire formed on the board; a ground wire formed on the board; an insulating layer covering the signal wire, the...
8802532 Bipolar transistor and method for manufacturing the same  
Disclosed are example bipolar transistors capable of reducing the area of a collector, reducing the distance between a base and a collector, and/or reducing the number of ion implantation...
8790984 High-beta bipolar junction transistor and method of manufacture  
An NPN bipolar junction transistor is disclosed that exhibits a collector-to-emitter breakdown voltage greater than 10 volts and a beta greater than 300. The large value of beta is obtained by...
8779600 Interlevel dielectric stack for interconnect structures  
A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental...
8765563 Trench confined epitaxially grown device layer(s)  
Trench-confined selective epitaxial growth process in which epitaxial growth of a semiconductor device layer proceeds within the confines of a trench. In embodiments, a trench is fabricated to...
8742499 Semiconductor device and manufacturing method thereof  
In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in...
8728897 Power sige heterojunction bipolar transistor (HBT) with improved drive current by strain compensation  
A power SiGe heterojunction bipolor transistor (HBT) with improved drive current by strain compensation and methods of manufacture are provided. A method includes adding carbon in a continuous...
8716836 Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device  
A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an...
8703570 Methods of fabricating substrates  
A method of fabricating a substrate includes forming spaced first features and spaced second features over a substrate. The first and second features alternate with one another and are spaced...
8704335 Spacer formation in the fabrication of planar bipolar transistors  
A bipolar transistor is fabricated having a collector (52) in a substrate (1) and a base (57, 58) and an emitter (59) formed over the substrate. The base has a stack region (57) which is laterally...
8697505 Method of forming a semiconductor structure  
A semiconductor structure is disclosed. The semiconductor structure includes a first layer. A second layer is disposed on the first layer and different from the first layer in composition. An...
8697532 InP based heterojunction bipolar transistors with emitter-up and emitter-down profiles on a common wafer  
A wafer comprising at least one emitter-up Heterojunction Bipolar Transistor (HBT) and at least one emitter-down HBT on a common InP based semiconductor wafer. Isolation and N-type implants into...
8673726 Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the transistor  
Disclosed are embodiments of a bipolar or heterojunction bipolar transistor and a method of forming the transistor. The transistor can incorporate a dielectric layer sandwiched between an...
8664698 Bipolar transistor and method with recessed base electrode  
High frequency performance of (e.g., silicon) bipolar devices is improved by reducing the extrinsic base resistance Rbx. An emitter, intrinsic base and collector are formed in a semiconductor...
8664697 Transistor device  
To provide a transistor device, which is composed of a compound semiconductor, having a multilayer structure in which a high electron mobility transistor (HEMT) and a heterojunction bipolar...
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product  
The product of the breakdown voltage (BVCEO) and the cutoff frequency (fT) of a SiGe heterojunction bipolar transistor (HBT) is increased beyond the Johnson limit by utilizing a doped region with...
8609501 Fluorine implant under isolation dielectric structures to improve bipolar transistor performance and matching  
A method of fabricating an integrated circuit including bipolar transistors that reduces the effects of transistor performance degradation and transistor mismatch caused by charging during plasma...
8603884 Methods of fabricating substrates  
A method of fabricating a substrate includes forming first and second spaced features over a substrate. The first spaced features have elevationally outermost regions which are different in...
8592865 Overvoltage tolerant HFETs  
Design constraints for a self protecting GaN HFET and in general any group III V HFET are described. The design constraints depend on the separation between the gate and the drain and the...
8586441 Germanium lateral bipolar junction transistor  
A germanium lateral bipolar junction transistor (BJT) is formed employing a germanium-on-insulator (GOI) substrate. A silicon passivation layer is deposited on the top surface of a germanium layer...
8574994 HBT with emitter electrode having planar side walls  
A heterojunction bipolar transistor is formed with an emitter electrode that comprises an emitter epitaxy underlying an emitter metal cap and that has horizontal dimensions that are substantially...
8557670 SOI lateral bipolar junction transistor having a wide band gap emitter contact  
A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and...
8546206 Enhancement mode III-nitride FET  
A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface...
8530934 Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto  
A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by...
8519443 Method for making a heterojunction bipolar transistor  
The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base...
8513706 Heterojunction bipolar transistors with reduced base resistance  
Heterojunction bipolar transistors with reduced base resistance, as well as fabrication methods for heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The...
8502269 Semiconductor device  
A first first-conductivity-type diffusion layer, a first second-conductivity-type diffusion layer, a second first-conductivity-type diffusion layer, and a second second-conductivity-type diffusion...
8435852 HBT with configurable emitter  
A heterojunction bipolar transistor is formed with an emitter electrode that comprises an emitter epitaxy underlying an emitter metal cap and that has horizontal dimensions that are substantially...
8420493 SOI SiGe-base lateral bipolar junction transistor  
A lateral heterojunction bipolar transistor (HBT) is formed on a semiconductor-on-insulator substrate. The HBT includes a base including a doped silicon-germanium alloy base region, an emitter...
8415762 Semiconductor device for performing photoelectric conversion  
The external base electrode has a two-layered structure where a p-type polysilicon film doped with a medium concentration of boron is laminated on a p-type polysilicon film doped with a high...
8405127 Method and apparatus for fabricating a heterojunction bipolar transistor  
In one embodiment, the invention is a method and apparatus for fabricating a heterojunction bipolar transistor. One embodiment of a heterojunction bipolar transistor includes a collector layer, a...
8395188 Silicon-germanium heterojunction bipolar transistor  
A SiGe HBT is disclosed. A collector region consists of a first ion implantation region in an active area as well as second and third ion implantation regions respectively at bottom of field oxide...
8389372 Heterojunction bipolar transistors with reduced base resistance  
Heterojunction bipolar transistors with reduced base resistance, as well as fabrication methods for heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The...
8390027 Gallium nitride semiconductor device and manufacturing method thereof  
A gallium nitride semiconductor device is disclosed that can be made by an easy manufacturing method. The device includes a silicon substrate, buffer layers formed on the top surface of the...
8377788 SiGe heterojunction bipolar transistor and method of forming a SiGe heterojunction bipolar transistor  
A SiGe heterojunction bipolar transistor is fabricated by etching an epitaxially-formed structure to form a mesa that has a collector region, a cap region, and a notched SiGe base region that lies...
8354324 Mesa heterojunction phototransistor and method for making same  
A two-terminal mesa phototransistor and a method for making it are disclosed. The photo transistor has a mesa structure having a substantially planar semiconductor surface. In the mesa structure...
8343841 Method for fabricating a semiconductor device  
A method for fabricating a semiconductor device includes forming a first semiconductor layer on a front side of the semiconductor substrate. Additional semiconductor layers may be formed on a font...
8304302 Photovoltaic device using single wall carbon nanotubes and method of fabricating the same  
A photovoltaic device and methods for forming the same. In one embodiment, the photovoltaic device has a silicon substrate, and a film comprising a plurality of single wall carbon nanotubes...

Matches 1 - 50 out of 368 1 2 3 4 5 6 7 8 >