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4937204 Method of making a superlattice heterojunction bipolar device  
A semiconductor apparatus is disclosed, in which the entire or part of an electron active region is formed by a superlattice structure semiconductor layer in which a plurality of different...
4883770 Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication  
A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This...
4824805 Method of manufacturing semiconductor device  
A method of manufacturing a heterojunction bipolar transistor comprising the sequential steps of; forming an extra epitaxial layer (9) on a layered structure which consists of a collector layer...
4751195 Method of manufacturing a heterojunction bipolar transistor  
A method of manufacturing a heterojunction bipolar transistor in which a collector region, a base region and an emitter region are successively formed on a compound semiconductor substrate,...
4751201 Passivation of gallium arsenide devices with sodium sulfide  
A method of passivating a gallium arsenide electronic device by depositing a sulfide film on a portion on the substrate to be passivated for providing an ideal interface layer wherein surface...
4728616 Ballistic heterojunction bipolar transistor  
A heterojunction transistor doped to form a specially-shaped emitter-base conduction band step or spike is disclosed. The potential barrier is then utilized to accelerate electrons across the base...
4704785 Process for making a buried conductor by fusing two wafers  
A process, and product made thereby, for bonding two wafers together to form a single wafer with a continuous interface, and for selectively burying a low impedance conductor in the wafer, by...
4216037 Method for manufacturing a heterojunction semiconductor device by disappearing intermediate layer  
A method for manufacturing a semiconductor device comprises evaporating phosphorus on a silicon substrate to form a thin phosphorus layer and growing gallium phosphide on the substrate having the...
3753802 TRANSISTOR  
A method of making a transistor by forming a layer of high resistivity on a semiconductor collector body, diffusing a base zone into the layer to a depth less than the thickness of the layer and...
3488234 SEMICONDUCTOR DEVICE  
3482306 METHOD OF MAKING AN ESAKI MEANS FOR OBTAINING HIGH CURRENT GAIN FACTOR  
3366517 Formation of semiconductor devices  
3363155 Opto-electronic transistor with a base-collector junction spaced from the material heterojunction  
3242018 Semiconductor device and method of producing it  
3211970 Semiconductor devices  
3152026 Method of manufaccturing semi-conductor devices of the wide-gap electrode type  
3057762 Heterojunction transistor manufacturing process  
2929859 Semiconductor devices  

Matches 351 - 368 out of 368 < 1 2 3 4 5 6 7 8