Matches 251 - 300 out of 368 < 1 2 3 4 5 6 7 8 >


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6444591 Method for reducing contamination prior to epitaxial growth and related structure  
According to a disclosed embodiment, the surface of a semiconductor wafer is covered by an etch stop layer. For example, the etch stop layer can be composed of silicon dioxide. A cap layer is then...
6444535 Method to reduce emitter to base capacitance and related structure  
According to a disclosed embodiment, a base region is grown on a transistor region. A dielectric layer is next deposited over the base region. The dielectric layer can comprise, for example,...
6417058 SiGe/poly for low resistance extrinsic base npn transistor  
A low resistance bipolar transistor extrinsic base and method of manufacture. A layer of heavily doped polysilicon is deposited over an oxide layer on an npn silicon substrate and a window is...
6417059 Process for forming a silicon-germanium base of a heterojunction bipolar transistor  
A process for forming a silicon-germanium base of a heterojunction bipolar transistor. First, a silicon substrate having a mesa surrounded by a trench is formed. Next, a silicon-germanium layer is...
6410395 Method of manufacturing a semiconductor device comprising SiGe HBTs  
A method of manufacturing a semiconductor device comprising heterojunction bipolar transistors (HBTs), in which method a first semiconductor layer of monocrystalline silicon (5), a second...
6410396 Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications  
Devices and methods for fabricating wholly silicon carbide heterojunction bipolar transistors (HBTs) using germanium base doping to produce suitable emitter/base heterojunctions. In one variation,...
6406965 Method of fabricating HBT devices  
A method of fabricating an HBT transistor with extremely high speed and low operating current. The transistor has a small base area and a small emitter area with most of the emitter area contacted...
6403436 Semiconductor device and method of manufacturing the same  
Subcollector layers or emitter layers constituting a bipolar transistor having different thicknesses form a two-layered structure. A resistor layer is formed at the same as one of the subcollector...
6395608 Heterojunction bipolar transistor and its fabrication method  
A heterojunction bipolar transistor and its fabrication method is disclosed. The heterojunction bipolar transistor includes a substrate; a collector layer formed to have a ledge or MESA on the...
6395607 Integrated circuit fabrication method for self-aligned copper diffusion barrier  
A microelectronic device having a self aligned metal diffusion barrier is disclosed. A microelectronic device having a substrate and a dielectric layer on the substrate. A trench having inside...
6384469 Vertical bipolar transistor, in particular with an SiGe heterojunction base, and fabrication process  
The semiconductor region of an intrinsic collector is surrounded with a lateral insulating region. A semi-conducting layer comprising a SiGe heterojunction is partially located between the...
6376867 Heterojunction bipolar transistor with reduced thermal resistance  
The performance of a heterojunction bipolar transistor (HBT) operating at high power is limited by the power that can be dissipated by the device. This, in turn, is limited by the thermal...
6372594 Fabrication method of submicron gate using anisotropic etching  
Disclosed is a method for fabricating a self-aligned submicron gate electrode using an anisotropic etching process. The method involves the steps of laminating a dummy emitter defining a dummy...
6365478 Solid state electronic device fabrication using crystalline defect control  
A solid state electronic device (40) comprising a substrate (30) and layers (32 and 34) is fabricated to control the formation of crystalline defects to control at least one characteristic of the...
6365477 Method for producing a heterobiopolar transistor  
A method for producing a heterobipolar transistor, arranged on a substrate of semiconductor material on which is grown a semiconductor sequence for a collector, a base and an emitter, which method...
6355544 Selective high concentration doping of semiconductor material utilizing laser annealing  
Extremely high dopant concentrations are uniformly introduced into a semiconductor material by laser annealing aided by an anti-reflective coating (ARC). A spin-on-glass (SOG) film containing...
6346452 Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers  
Process for the formation of epitaxial layers with controlled n-type dopant concentration depth profiles for use in NPN bipolar transistors. The process includes first providing a semiconductor...
6335255 Manufacturing a heterobipolar transistor and a laser diode on the same substrate  
A heterobipolar transistor HBT and a laser diode LD are manufactured from a common epitaxial structure having a plurality of semiconducting layers. The transistor can be manufactured directly from...
6333236 Semiconductor device and method for manufacturing same  
In a hetero-junction bipolar transistor, an undoped Al0.7 Ga0.3 As stopper layer 5 having good etching controllability is provided on a base layer 4, thereby forming a base without etching damage,...
6316795 Silicon-carbon emitter for silicon-germanium heterojunction bipolar transistors  
The invention provides an effective means and apparatus for allowing higher operational frequencies in heterojunction bipolar transistors by trapping silicon interstitial atoms and thereby...
6310368 Semiconductor device and method for fabricating same  
A semiconductor device includes: a semiconductor layered structure including a predetermined mesa portion, formed on a semiconductor substrate; a support member formed so as to bury the mesa...
6271098 Heterojunction bipolar transistor and method for producing the same  
A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor β from decreasing.The n-GaAs carrier supply layer...
6271097 Method of fabricating a low base-resistance bipolar transistor  
A method for fabricating a bipolar transistor comprising the steps of implanting portions 320 of a semiconductor material structure with ions to render the portions semi-insulating; forming an...
6265276 Structure and fabrication of bipolar transistor  
A complementary bipolar transistor device, made of two separate conductive films such as two highly doped polysilicon films of opposite conductivity types. The doped polysilicon film is used for a...
6255150 Use of crystalline SiOx barriers for Si-based resonant tunneling diodes  
A method of forming a crystalline silicon well over a silicon oxide barrier layer, preferably for use in formation of a tunneling diode. A silicon substrate is provided of predetermined...
6248639 Electrostatic discharge protection circuit and transistor  
A circuit protects against electrostatic discharge and includes a pad which receives an external signal source. The transistor of the present invention is connected to the circuit to be protected...
6165859 Method for making InP heterostructure devices  
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of...
6159816 Method of fabricating a bipolar transistor  
A bipolar transistor includes a passivating layer of material 40 in the base structure 42 that serves to cover the extrinsic base region of the transistor. The passivating layer 40 is formed of a...
6140196 Method of fabricating high power bipolar junction transistor  
A method of fabricating a high power bipolar junction transistor. A P-type substrate having an N-type buried region is provided and a trench is formed within the substrate to expose the buried...
6127716 Heterojunction bipolar transistor and manufacturing method thereof  
On an n-type semiconductor substrate 41 doped in high density, a p-type semiconductor layer 2, an n-type semiconductor layer 4 doped in high density, which is a collector, a p-type semiconductor...
6118136 Superlatticed negative-differential-resistance functional transistor  
The invention is to develop a high-speed low power consumption resonant tunneling element--a superlatticed negative-differential-resistance (NDR) functional transistor. The proposed element...
6107151 Heterojunction bipolar transistor and method of manufacturing  
A heterojunction bipolar transistor structure grown with organometallic vapor phase epitaxy (OVMPE) which uses zinc as the base dopant. The HBT structure has eight layers grown on a substrate,...
6103583 Method for producing quantization functional device  
A quantization functional device includes: a silicon thin layer having a first surface and a second surface each made of a predetermined crystal surface, and the silicon thin layer being formed of...
6096617 Method of manufacturing a carbon-doped compound semiconductor layer  
A compound semiconductor device is manufactured by forming a carbon-doped compound semiconductor device at a predetermined growth temperature on a compound semiconductor substrate, stopping the...
6087683 Silicon germanium heterostructure bipolar transistor with indium doped base  
The present invention provides, in one embodiment, a method of fabricating a heterostructure bipolar transistor. This particular embodiment comprises forming a n-type doped region in a...
6081003 Heterojunction bipolar transistor with ballast resistor  
A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor β from decreasing. The n-GaAs carrier supply layer...
5953617 Method for manufacturing optoelectronic integrated circuits  
A method for manufacturing an optoelectronic integrated circuit including a photo diode for transforming light into electric signals, an HBT for amplifying said electric signals from said photo...
5897359 Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor  
There is disclosed a method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor having a good conformity and an improved speed characteristic, which includes the steps...
5858818 Formation of InGaSa p-n Junction by control of growth temperature  
An epitaxial growth method for a compound semiconductor thin film, capable of forming a p-n junction with an atomic-scale ultra-micro structure is disclosed. The method involves loading the...
5846867 Method of producing Si-Ge base heterojunction bipolar device  
A method of producing a bipolar transistor includes the step of forming an emitter contact layer containing a high concentration of impurity by means of plasma doping or solid-state diffusion...
5840612 Method of fabricating very high gain heterojunction bipolar transistors  
A heterojunction bipolar transistor with a vertically integrated profile includes a substrate layer, a collector contact layer, a collector layer, a base layer and an emitter layer, formed from...
5834362 Method of making a device having a heteroepitaxial substrate  
A method for fabricating a compound semiconductor device includes the steps of depositing a first group III-V compound semiconductor layer on a surface of a Si substrate while holding a...
5821149 Method of fabricating a heterobipolar transistor  
A method of fabricating an HBT using differential epitaxy. By using an emitter mask and an exside-inside spacer structure, a self-aligned fabrication of an emitter contact and a base contact is...
5789301 Method for reducing extrinsic base-collector capacitance  
This is a method of fabricating a heterojunction bipolar transistor on a wafer. The method can comprise: forming a doped subcollector layer 31 on a semiconducting substrate 30; forming a doped...
5770490 Method for producing dual work function CMOS device  
A dual work function CMOS device and method for producing the same is disclosed. The method includes: depositing a first layer of a doped material, either n-type or p-type, over a substrate to be...
5739062 Method of making bipolar transistor  
A method of fabricating a bipolar transistor includes successively growing a collector layer, a base layer, and a crystalline mask layer on a semiconductor substrate; forming an opening in the...
5736417 Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor  
A heterejunction bipolar transistor and a method for fabricating an HBT with self-aligned base metal contacts using a double photoresist, which requires fewer process steps than known methods,...
5702958 Method for the fabrication of bipolar transistors  
The invention described herein includes, in one of its forms, a method for fabricating a semiconductor device having ledge material (148, 150, 152, 162) extending over an undercut region. The...
5700701 Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors  
This is a method of fabricating a bipolar transistor on a wafer. The method can comprise: forming a doped emitter contact layer 31 on a substrate 30; forming a doped emitter layer 32 on top of the...
5672522 Method for making selective subcollector heterojunction bipolar transistors  
A method for fabricating an HBT in which the subcollector-base junction, which contributes to the base-collector capacitance of the device, is reduced by using a selective subcollector. In...

Matches 251 - 300 out of 368 < 1 2 3 4 5 6 7 8 >