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8183071 |
Method for producing nitride semiconductor optical device and epitaxial wafer
In step S106, an InXGa1-XN well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature TW. In step S107, immediately...
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8173459 |
Light emitting device having isolating insulative layer for isolating light emitting cells from each other and method of fabricating the same
Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device...
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8173458 |
Method for forming quantum well structure and method for manufacturing semiconductor light emitting element
A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light...
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8163580 |
Multiple die LED and lens optical system
A light emitting device includes a number of light emitting diode dies (LEDs) mounted on a shared submount and covered with a single lens element that includes a corresponding number of lens...
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8135251 |
Opto-electric hybrid board and manufacturing method thereof
An opto-electric hybrid board in which a new alignment mark having an identifying mark that is easy to recognize is formed in addition to a conventional alignment mark, and a method of...
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8128271 |
Light coupling into films
A light emitting sign including a lightguide having a thickness not greater than 0.5 millimeters. The lightguide having an array of elongated legs extending therefrom, wherein each leg terminates...
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8124431 |
Nitride semiconductor laser device and method of producing the same
A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride...
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8126306 |
Two-dimensional photonic crystal
A two-dimensional photonic crystal according to the present invention includes a first layer having a dielectric first layer slab in which first layer holes having a refractive index lower than...
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8124430 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method for forming quantum well structure and method for manufacturing semiconductor light emitting element
A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light...
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8126301 |
Optical waveguide and method for producing the same
Provided are an optical waveguide and a production method thereof which can constrict both the width and thickness of the SOI optical waveguide core layer in the same process and at the same time,...
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8124433 |
Low optical loss electrode structures for LEDs
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric...
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8110851 |
Nitride-based semiconductor device and method for fabricating the same
A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on...
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8110838 |
Spatial localization of light-generating portions in LEDs
Light-emitting devices (e.g., LEDs) and methods associated with such devices are provided. In some embodiments, the device includes a distribution of light-generating portions (including active...
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8101447 |
Light emitting diode element and method for fabricating the same
The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to...
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8090229 |
Method and device for providing electronic circuitry on a backplate
A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a...
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8084764 |
Semiconductor light emitting device and nitride semiconductor light emitting device
The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer...
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8076246 |
Method of manufacturing thermally assisted magnetic head
A method comprises a first multilayer body forming step of forming a first multilayer body on a first cladding layer, the first multilayer body including a core layer and a first polishing stop...
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8078018 |
Communication methods, methods of forming an interconnect, signal interconnects, integrated circuit structures, circuits, and data apparatuses
Some embodiments include communication methods, methods of forming an interconnect, signal interconnects, integrated circuit structures, circuits, and data apparatuses. In one embodiment, a...
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8071404 |
Method for fabricating light emitting device
By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material...
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8067255 |
Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and...
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8063410 |
Nitride semiconductor light emitting device and method of manufacturing the same
A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting...
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8062696 |
Front substrate of plasma display panel and fabricating method thereof
Disclosed is a front substrate of a plasma display panel and fabricating method thereof, by which color temperature, color purity, and contrast of PDP are enhanced. The present invention includes...
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8058085 |
Method of forming a waveguide in diamond
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single...
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8050524 |
Optical device and method related thereto
An optical device includes an electrooptic crystal substrate, a polarization-inverted region formed in a part of the electrooptic crystal substrate, an optical waveguide formed in the electrooptic...
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8039845 |
Methods for coupling diamond structures to photonic devices
Various embodiments of the present invention are directed to methods for coupling semiconductor-based photonic devices to diamond. In one embodiment of the present invention, a photonic device is...
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8035116 |
Semiconductor device, light emitting diode head, and image forming apparatus
A semiconductor device includes a substrate; a first conductive type semiconductor layer disposed on a main surface of the substrate; a second conductive type semiconductor layer disposed on the...
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8030224 |
Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser
A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing...
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8027554 |
Thermo-optic phase shifter and method for manufacturing same
The thermo-optic phase shifter (200) according to an exemplary aspect of the invention includes: a substrate (201); a sacrificial layer (202) formed above the substrate (201); a first cladding...
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8021900 |
Planar waveguide with patterned cladding and method for producing same
Methods for the production of integrated optical waveguides which have a patterned upper cladding with a defined opening to allow at least one side or at least one end of a light transmissive...
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8017419 |
All-silicon raman amplifiers and lasers based on micro ring resonators
Methods of manufacturing a lasing device are provided by some embodiments, the methods including: creating a silicon micro ring with a predetermined radius and a predetermined first cross-sectional...
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8017420 |
Method of forming optical waveguide
Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An...
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8019186 |
Photonic crystal circuit comprising a guided mode adapter and optical system including said circuit coupled with an optical fiber
The invention relates to a photonic crystal circuit comprising a guide produced in a photonic crystal membrane on the surface of a substrate and a mode adapter coupled to said guide, wherein the...
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7998766 |
Semiconductor element and manufacturing method thereof
A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an...
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7995871 |
Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania requires light of about 390 nm wavelength,...
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7981704 |
Method for manufacturing semiconductor optical device
After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO2 film, and a resist is applied; then, a resist...
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7981707 |
Method for enhancing optical characteristics of multilayer optoelectronic components
The method of the invention consists of implanting ions into the surface of multilayer optical waveguides, in the highly doped layer, in a defined pattern so as to modify the refractive index of...
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7983516 |
Zinc oxide diodes for optical interconnections
The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide...
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7972882 |
Microresonator systems and methods of fabricating the same
Various embodiments of the present invention are related to microresonator systems and to methods for fabricating the microresonator systems. In one embodiment, a method of fabricating a...
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7974505 |
Method for fabricating selectively coupled optical waveguides on a substrate
A method for fabricating selectively coupled optical waveguides on a substrate is disclosed. Initially, a first layer of waveguide material is deposited on a substrate. The first layer of waveguide...
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7967663 |
Process of forming a deflection mirror in a light waveguide
A process of forming a deflection mirror in a light waveguide with a use of a dicing blade having a cutting end with a flat top cutting face and at least one slanted side cutting face. The process...
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7970241 |
High efficient silicon-on-lithium niobate modulator
A modulator includes an electro-optical substrate and a first and second waveguide formed of a doped semiconductor material positioned on a surface of an electro-optical substrate forming a slot...
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7970244 |
Fabrication of an optical ring resonator device
An embodiment of a method for manufacturing an optical ring resonator device is disclosed. The method forms a ring resonator waveguide on a semiconductor substrate, forms an unoriented...
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7964419 |
Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as...
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7960198 |
Method of making a semiconductor device with surge current protection
A wide bandgap semiconductor device with surge current protection and a method of making the device are described. The device comprises a low doped n-type region formed by plasma etching through...
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7955875 |
Forming light emitting devices including custom wavelength conversion structures
Methods of forming a light emitting device include selectively forming a wavelength conversion structure on a light emitting element using stereolithography. Selectively forming the wavelength...
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7943407 |
Method for manufacturing semiconductor laser
A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group...
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7945131 |
System having optical amplifier incorporated into stacked optical devices
An optical system includes optical devices that each has functional sides between lateral sides. The functional sides include a top side and a bottom side. A first one of the devices has an optical...
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7939352 |
Selective area metal bonding Si-based laser
A method for fabricating a selective area metal bonding Si-based laser, optically or electrically pumped includes: forming a Si waveguide area and a bonding area in a Silicon-On-Insulator (SOI)...
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7941024 |
Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD
The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is...
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7936798 |
Nitride based laser diode and method of manufacturing nitride based laser diode
The laser diode comprising crystalline substrate (1) where set of subsequent n-type layers, set of optically active layers (5) and set of p-type layers is deposited. The set of n-type layers...
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