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9029976 Semiconductor device and method of fabricating the same  
Provided is a semiconductor device which increases a concentration around an emitter by arranging a lightly doped region (HNMLDD). When the semiconductor device is operated in a forward bias, a...
9029950 Semiconductor structure and method for forming the same  
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a first source/drain region, a second source/drain region, a first...
9024413 Semiconductor device with IGBT cell and desaturation channel structure  
A semiconductor device includes an IGBT cell including a second-type doped drift zone, and a desaturation semiconductor structure for desaturating a charge carrier concentration in the IGBT cell....
9012270 Metal layer enabling directed self-assembly semiconductor layout designs  
Methods for forming a DSA pre-patterned semiconductor transistor layout and the resulting devices are disclosed. Embodiments may include forming a pre-patterned transistor layout by directed...
9000518 Semiconductor device and related fabrication methods  
Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first vertical drift region of semiconductor material, a second...
8975146 Trench isolation structures and methods for bipolar junction transistors  
Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation region is formed in a substrate to define a lateral boundary for an active device...
8962461 GaN HEMTs and GaN diodes  
Consistent with an example embodiment, a GaN heterojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot,...
8946038 Diode structures using fin field effect transistor processing and method of forming the same  
A method of forming one or more diodes in a fin field-effect transistor (FinFET) device includes forming a hardmask layer having a fin pattern, said fin pattern including an isolated fin area, a...
8946040 SOI lateral bipolar transistor having multi-sided base contact and methods for making same  
A Bipolar Junction Transistor with an intrinsic base, wherein the intrinsic base includes a top surface and two side walls orthogonal to the top surface, and a base contact electrically coupled to...
8927379 Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology  
A method of forming a heterojunction bipolar transistor. The method includes providing a structure comprising at least an intrinsic base region and an emitter pedestal region. A stack is formed on...
8901690 Semiconductor structure for photon detection  
A semiconductor structure for photon detection, comprising a substrate composed of a semiconductor material having a first doping, a contact region fitted at the frontside of the substrate, a bias...
8896093 Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter  
A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are...
8878241 Semiconductor structure and manufacturing method for the same and ESD circuit  
A semiconductor structure and manufacturing method for the same, and an ESD circuit are provided. The semiconductor structure comprises a first doped region, a second doped region, a third doped...
8871599 Method of manufacturing IC comprising a bipolar transistor and IC  
Disclosed is an integrated circuit and a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate comprising a pair of isolation...
8866263 Emitter ballasting by contact area segmentation in ESD bipolar based semiconductor component  
Integrated circuits (ICs) utilize bipolar transistors in electro-static discharge (ESD) protection circuits to shunt discharge currents during ESD events to protect the components in the ICs....
8829571 Punch-through semiconductor device and method for producing same  
A maximum-punch-through semiconductor device such as an insulated gate bipolar transistor (IGBT) or a diode, and a method for producing same are disclosed. The MPT semiconductor device can include...
8823140 GaN vertical bipolar transistor  
An embodiment of a semiconductor device includes a III-nitride base structure of a first conductivity type, and a III-nitride emitter structure of a second conductivity type having a first surface...
8816419 Semiconductor device  
Provided is a semiconductor device having a high switching speed. A semiconductor device is provided with an n-type epitaxial layer having a plurality of trenches arranged at prescribed intervals;...
8815654 Vertical current controlled silicon on insulator (SOI) device such as a silicon controlled rectifier and method of forming vertical SOI current controlled devices  
A Silicon on Insulator (SOI) Integrated Circuit (IC) chip with devices such as a vertical Silicon Controlled Rectifier (SCR), vertical bipolar transistors, a vertical capacitor, a resistor and/or...
8809156 Method for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications  
A method and structures are provided for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications. A deep oxygen implant is...
8810004 Methods, systems and devices for electrostatic discharge protection  
A resistor-equipped transistor includes a package that provides an external collector connection node (114, 134), an external emitter connection node (120, 140) and an external base connection...
8802532 Bipolar transistor and method for manufacturing the same  
Disclosed are example bipolar transistors capable of reducing the area of a collector, reducing the distance between a base and a collector, and/or reducing the number of ion implantation...
8790984 High-beta bipolar junction transistor and method of manufacture  
An NPN bipolar junction transistor is disclosed that exhibits a collector-to-emitter breakdown voltage greater than 10 volts and a beta greater than 300. The large value of beta is obtained by...
8785306 Manufacturing methods for accurately aligned and self-balanced superjunction devices  
A method for manufacturing a semiconductor power device on a semiconductor substrate supporting a drift region composed of an epitaxial layer by growing a first epitaxial layer followed by forming...
8786051 Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitance  
Disclosed are a transistor (e.g., bipolar junction transistor (BJT) or a heterojunction bipolar transistor (HBT)) and a method of forming the transistor with a narrow in-substrate collector region...
8749024 Stacked ESD clamp with reduced variation in clamp voltage  
An integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series is disclosed. Each bipolar transistor includes a breakdown inducing...
8748255 Method of manufacturing an electrostatic protection device  
One embodiment of an electrostatic protection diode in an integrated circuit includes a base area having at least two bends therein.
8736355 Device layout for reference and sensor circuits  
A band gap reference circuit includes an error-amplifier-based current mirror coupled between a first supply node and a pair of intermediate voltage nodes, and a matched diode pair for providing a...
8722487 Semiconductor device with an electrode including an aluminum-silicon film  
A semiconductor device, including a silicon substrate having a first major surface and a second major surface, a front surface device structure formed in a region of the first major surface, and a...
8716756 Semiconductor device  
A semiconductor device according to the present invention includes a substrate; a nitride semiconductor layer formed above the substrate and having a laminated structure including at least three...
8716096 Self-aligned emitter-base in advanced BiCMOS technology  
A self-aligned bipolar transistor and method of fabricating the same are disclosed. In an embodiment, a substrate and an intrinsic base are provided, followed by a first oxide layer, and an...
8664698 Bipolar transistor and method with recessed base electrode  
High frequency performance of (e.g., silicon) bipolar devices is improved by reducing the extrinsic base resistance Rbx. An emitter, intrinsic base and collector are formed in a semiconductor...
8652919 Tunable semiconductor device  
Embodiments of the present invention include a method for forming a tunable semiconductor device. In one embodiment, the method comprises: forming a semiconductor substrate; patterning a first...
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product  
The product of the breakdown voltage (BVCEO) and the cutoff frequency (fT) of a SiGe heterojunction bipolar transistor (HBT) is increased beyond the Johnson limit by utilizing a doped region with...
RE44730 Method of manufacturing a MOSFET structure  
A method of forming a MOSFET is provided. The method comprises forming a relatively thin layer of dielectric on a substrate. Depositing a gate material layer on the relatively thin layer of...
RE44720 Method of manufacturing a MOSFET structure  
A method of forming a MOSFET is provided. The method comprises forming a relatively thin layer of dielectric on a substrate. Depositing a gate material layer on the relatively thin layer of...
8610241 Homo-junction diode structures using fin field effect transistor processing  
Diodes and bipolar junction transistors (BJTs) are formed in IC devices that include fin field-effect transistors (FinFETs) by utilizing various process steps in the FinFET formation process. The...
8603883 Interface control in a bipolar junction transistor  
Methods of fabricating bipolar junction transistors, bipolar junction transistors, and design structures for a bipolar junction transistor. A first portion of the intrinsic base layer is masked...
8598008 Stacked ESD clamp with reduced variation in clamp voltage  
An integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series is disclosed. Each bipolar transistor includes a breakdown inducing...
8585917 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods  
Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a...
8586423 Silicon controlled rectifier with stress-enhanced adjustable trigger voltage  
Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon...
8581339 Structure of NPN-BJT for improving punch through between collector and emitter  
A bipolar junction transistor and a manufacturing method for the same are provided. The bipolar junction transistor includes a well region, an emitter electrode, a base electrode, a collector...
8546229 Methods for fabricating bipolar transistors with improved gain  
Insufficient gain in bipolar transistors (20) is improved by providing an alloyed (e.g., silicided) emitter contact (452) smaller than the overall emitter (42) area. The improved emitter (42) has...
8530934 Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto  
A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by...
8501572 Spacer structure for transistor device and method of manufacturing same  
The present disclosure provides a bipolar junction transistor (BJT) device and methods for manufacturing the BJT device. In an embodiment, the BJT device includes: a semiconductor substrate having...
8502269 Semiconductor device  
A first first-conductivity-type diffusion layer, a first second-conductivity-type diffusion layer, a second first-conductivity-type diffusion layer, and a second second-conductivity-type diffusion...
8492256 Method of manufacturing semiconductor apparatus  
A method of manufacturing a semiconductor apparatus includes forming back surface electrode 4 on back surface of semiconductor wafer 20, that bends convexly toward the front surface side due to...
8466019 Semiconductor device and bipolar-CMOS-DMOS  
A semiconductor device fabricating method is described. The semiconductor device fabricating method comprises forming an epitaxial layer on a substrate, wherein the epitaxial layer is the same...
8466501 Asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method of forming the asymmetrical SOI JFET  
An asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method. The JFET includes a bottom gate on an insulator layer, a channel region on the bottom gate and, on...
8455269 Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices  
In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time...