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8664698 Bipolar transistor and method with recessed base electrode  
High frequency performance of (e.g., silicon) bipolar devices is improved by reducing the extrinsic base resistance Rbx. An emitter, intrinsic base and collector are formed in a semiconductor body....
8652919 Tunable semiconductor device  
Embodiments of the present invention include a method for forming a tunable semiconductor device. In one embodiment, the method comprises: forming a semiconductor substrate; patterning a first mask...
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product  
The product of the breakdown voltage (BVCEO) and the cutoff frequency (fT) of a SiGe heterojunction bipolar transistor (HBT) is increased beyond the Johnson limit by utilizing a doped region with a...
RE44730 Method of manufacturing a MOSFET structure  
A method of forming a MOSFET is provided. The method comprises forming a relatively thin layer of dielectric on a substrate. Depositing a gate material layer on the relatively thin layer of...
RE44720 Method of manufacturing a MOSFET structure  
A method of forming a MOSFET is provided. The method comprises forming a relatively thin layer of dielectric on a substrate. Depositing a gate material layer on the relatively thin layer of...
8610241 Homo-junction diode structures using fin field effect transistor processing  
Diodes and bipolar junction transistors (BJTs) are formed in IC devices that include fin field-effect transistors (FinFETs) by utilizing various process steps in the FinFET formation process. The...
8603883 Interface control in a bipolar junction transistor  
Methods of fabricating bipolar junction transistors, bipolar junction transistors, and design structures for a bipolar junction transistor. A first portion of the intrinsic base layer is masked...
8598008 Stacked ESD clamp with reduced variation in clamp voltage  
An integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series is disclosed. Each bipolar transistor includes a breakdown inducing feature....
8585917 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods  
Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a...
8586423 Silicon controlled rectifier with stress-enhanced adjustable trigger voltage  
Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon...
8581339 Structure of NPN-BJT for improving punch through between collector and emitter  
A bipolar junction transistor and a manufacturing method for the same are provided. The bipolar junction transistor includes a well region, an emitter electrode, a base electrode, a collector...
8546229 Methods for fabricating bipolar transistors with improved gain  
Insufficient gain in bipolar transistors (20) is improved by providing an alloyed (e.g., silicided) emitter contact (452) smaller than the overall emitter (42) area. The improved emitter (42) has a...
8530934 Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto  
A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by substitutional...
8501572 Spacer structure for transistor device and method of manufacturing same  
The present disclosure provides a bipolar junction transistor (BJT) device and methods for manufacturing the BJT device. In an embodiment, the BJT device includes: a semiconductor substrate having...
8502269 Semiconductor device  
A first first-conductivity-type diffusion layer, a first second-conductivity-type diffusion layer, a second first-conductivity-type diffusion layer, and a second second-conductivity-type diffusion...
8492256 Method of manufacturing semiconductor apparatus  
A method of manufacturing a semiconductor apparatus includes forming back surface electrode 4 on back surface of semiconductor wafer 20, that bends convexly toward the front surface side due to...
8466019 Semiconductor device and bipolar-CMOS-DMOS  
A semiconductor device fabricating method is described. The semiconductor device fabricating method comprises forming an epitaxial layer on a substrate, wherein the epitaxial layer is the same...
8466501 Asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method of forming the asymmetrical SOI JFET  
An asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method. The JFET includes a bottom gate on an insulator layer, a channel region on the bottom gate and, on the...
8455269 Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices  
In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time...
8455980 Schottky-clamped bipolar transistor with reduced self heating  
The self heating of a high-performance bipolar transistor that is formed on a fully-isolated single-crystal silicon region of a silicon-on-insulator (SOI) structure is substantially reduced by...
8445352 Manufacturing method of semiconductor device  
A problem in the conventional technique is that metal contamination on a silicon carbide surface is not sufficiently removed in a manufacturing method of a semiconductor device using a...
RE44140 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns  
In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can...
8409959 Vertically base-connected bipolar transistor  
Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the...
8389316 Strain bars in stressed layers of MOS devices  
A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS...
8389995 Epitaxial solid-state semiconducting heterostructures and method for making same  
A method for producing a solid-state semiconducting structure, includes steps in which: (i) a monocrystalline substrate is provided;(ii) a monocrystalline oxide layer is formed, by epitaxial...
8384167 Semiconductor device with field effect transistor and manufacturing method thereof  
A semiconductor device includes: a semiconductor substrate in which a SiGe layer having a first width in a channel direction is embedded in a channel forming region; gate insulating film formed on...
8372723 Bipolar device having buried contacts  
This disclosure, in one aspect, provides a method of manufacturing a semiconductor device that includes forming a collector for a bipolar transistor within a semiconductor substrate, forming a base...
8367510 Process for producing silicon carbide semiconductor device  
In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a...
8368177 Integrated circuit with ESD structure  
An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first...
8343841 Method for fabricating a semiconductor device  
A method for fabricating a semiconductor device includes forming a first semiconductor layer on a front side of the semiconductor substrate. Additional semiconductor layers may be formed on a font...
8334179 Semiconductor device and method for its production  
A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon...
8324044 Method of producing a semiconductor device with an aluminum or aluminum alloy electrode  
A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a...
8309436 Method of producing epitaxial substrate with gettering for solid-state imaging device, and method of producing solid-state imaging device using same substrate  
A method of producing an epitaxial substrate for a solid-state imaging device, comprising: forming a gettering sink by injecting laser beam to a semiconductor substrate through one surface thereof,...
8298901 Method for manufacturing bipolar transistors  
An improved method for manufacturing bipolar transistors is disclosed. The method for forming a PNP transistor comprises the steps of forming a P type collector on a substrate, forming a PNP...
8283234 Memory including bipolar junction transistor select devices  
An array is formed by a plurality of cells, wherein each cell is formed by a bipolar junction selection transistor having a first, a second, and a control region. The cell includes a common region,...
8269253 Rare earth enhanced high electron mobility transistor and method for fabricating same  
According to one embodiment, a high electron mobility transistor (HEMT) comprises an insulator layer comprising a first group III-V intrinsic layer doped with a rare earth additive. The HEMT also...
8247287 Method of fabricating a deep trench insulated gate bipolar transistor  
In one embodiment, a method comprises forming an epitaxial layer over a substrate of an opposite conductivity type, the epitaxial layer being separated by a buffer layer having a doping...
8247300 Control of dopant diffusion from buried layers in bipolar integrated circuits  
An integrated circuit and method of fabricating the integrated circuit is disclosed. The integrated circuit includes vertical bipolar transistors (30, 50, 60), each having a buried collector region...
8242007 Semiconductor device formed using single polysilicon process and method of fabricating the same  
Provided are a semiconductor device including a source/drain and a gate formed using a doped polysilicon process, and a method of fabricating the semiconductor device. The method comprises: forming...
8232156 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance  
Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance, as well as fabrication methods for vertical heterojunction bipolar transistors and design structures...
8216910 Group III-V compound semiconductor based heterojunction bipolar transistors with various collector profiles on a common wafer  
A wafer comprising at least one high Ft HBT and at least one high BVceo HBT having various collector profiles on a common III-V compound semiconductor based wafer. The N+ implant in the collector...
8203173 Semiconductor integrated circuit  
A semiconductor integrated circuit has: a substrate; a basic logic cell placed on the substrate and configured to function as a part of a logic circuit; and a dummy cell placed on the substrate and...
8158451 Method for manufacturing a junction  
The present invention relates to a semiconductor device comprising a homojunction or a heterojunction with a controlled dopant (concentration) profile and a method of making the same. Accordingly,...
8143910 Semiconductor integrated circuit and method of testing the same  
Provided is a semiconductor integrated circuit including: a first path that includes a first logic circuit; a second path that includes a second logic circuit; and a subsequent-stage circuit that...
8133765 Integrated RF ESD protection for high frequency circuits  
The invention relates to a high-frequency integrated circuit requiring ESD protection for a circuit node. One or more metallic layer is deposited within the integrated circuit and patterned to form...
8133791 Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith  
The invention relates to a method according to the part of the surface of the semiconductor body adjoining the opening and which is to be kept free is provided with a cover layer after which the...
8129248 Method of producing bipolar transistor structures in a semiconductor process  
In the method of producing bipolar transistor structures in a semiconductor process, an advanced epitaxial trisilane process can be used without the risk of poly stringers being formed. A base...
8119475 Method of forming gate of semiconductor device  
A method of forming a gate of a semiconductor device comprising providing a semiconductor substrate over which a gate insulating layer, a first conductive layer, a dielectric layer, and a second...
8110472 High power and high temperature semiconductor power devices protected by non-uniform ballasted sources  
A semiconductor power device is formed on a semiconductor substrate. The semiconductor power device includes a plurality of transistor cells distributed over different areas having varying amount...
8093131 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof  
In a semiconductor device of the present invention, a first base region 16 is extended to a part under a gate electrode 7 while having a vertical concentration profile of an impurity that increases...