Patents in Class 438/309

Matches 1 - 50 out of 502

Match	Document	Document Title
1	RE44140	Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can...
2	8409959	Vertically base-connected bipolar transistor Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the...
3	8389316	Strain bars in stressed layers of MOS devices A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS...
4	8389995	Epitaxial solid-state semiconducting heterostructures and method for making same A method for producing a solid-state semiconducting structure, includes steps in which: (i) a monocrystalline substrate is provided;(ii) a monocrystalline oxide layer is formed, by epitaxial...
5	8384167	Semiconductor device with field effect transistor and manufacturing method thereof A semiconductor device includes: a semiconductor substrate in which a SiGe layer having a first width in a channel direction is embedded in a channel forming region; gate insulating film formed on...
6	8372723	Bipolar device having buried contacts This disclosure, in one aspect, provides a method of manufacturing a semiconductor device that includes forming a collector for a bipolar transistor within a semiconductor substrate, forming a base...
7	8367510	Process for producing silicon carbide semiconductor device In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a...
8	8368177	Integrated circuit with ESD structure An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first...
9	8343841	Method for fabricating a semiconductor device A method for fabricating a semiconductor device includes forming a first semiconductor layer on a front side of the semiconductor substrate. Additional semiconductor layers may be formed on a font...
10	8334179	Semiconductor device and method for its production A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon...
11	8324044	Method of producing a semiconductor device with an aluminum or aluminum alloy electrode A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a...
12	8309436	Method of producing epitaxial substrate with gettering for solid-state imaging device, and method of producing solid-state imaging device using same substrate A method of producing an epitaxial substrate for a solid-state imaging device, comprising: forming a gettering sink by injecting laser beam to a semiconductor substrate through one surface thereof,...
13	8298901	Method for manufacturing bipolar transistors An improved method for manufacturing bipolar transistors is disclosed. The method for forming a PNP transistor comprises the steps of forming a P type collector on a substrate, forming a PNP...
14	8283234	Memory including bipolar junction transistor select devices An array is formed by a plurality of cells, wherein each cell is formed by a bipolar junction selection transistor having a first, a second, and a control region. The cell includes a common region,...
15	8269253	Rare earth enhanced high electron mobility transistor and method for fabricating same According to one embodiment, a high electron mobility transistor (HEMT) comprises an insulator layer comprising a first group III-V intrinsic layer doped with a rare earth additive. The HEMT also...
16	8247287	Method of fabricating a deep trench insulated gate bipolar transistor In one embodiment, a method comprises forming an epitaxial layer over a substrate of an opposite conductivity type, the epitaxial layer being separated by a buffer layer having a doping...
17	8247300	Control of dopant diffusion from buried layers in bipolar integrated circuits An integrated circuit and method of fabricating the integrated circuit is disclosed. The integrated circuit includes vertical bipolar transistors (30, 50, 60), each having a buried collector region...
18	8242007	Semiconductor device formed using single polysilicon process and method of fabricating the same Provided are a semiconductor device including a source/drain and a gate formed using a doped polysilicon process, and a method of fabricating the semiconductor device. The method comprises: forming...
19	8232156	Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance, as well as fabrication methods for vertical heterojunction bipolar transistors and design structures...
20	8216910	Group III-V compound semiconductor based heterojunction bipolar transistors with various collector profiles on a common wafer A wafer comprising at least one high Ft HBT and at least one high BVceo HBT having various collector profiles on a common III-V compound semiconductor based wafer. The N+ implant in the collector...
21	8203173	Semiconductor integrated circuit A semiconductor integrated circuit has: a substrate; a basic logic cell placed on the substrate and configured to function as a part of a logic circuit; and a dummy cell placed on the substrate and...
22	8158451	Method for manufacturing a junction The present invention relates to a semiconductor device comprising a homojunction or a heterojunction with a controlled dopant (concentration) profile and a method of making the same. Accordingly,...
23	8143910	Semiconductor integrated circuit and method of testing the same Provided is a semiconductor integrated circuit including: a first path that includes a first logic circuit; a second path that includes a second logic circuit; and a subsequent-stage circuit that...
24	8133765	Integrated RF ESD protection for high frequency circuits The invention relates to a high-frequency integrated circuit requiring ESD protection for a circuit node. One or more metallic layer is deposited within the integrated circuit and patterned to form...
25	8133791	Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith The invention relates to a method according to the part of the surface of the semiconductor body adjoining the opening and which is to be kept free is provided with a cover layer after which the...
26	8129248	Method of producing bipolar transistor structures in a semiconductor process In the method of producing bipolar transistor structures in a semiconductor process, an advanced epitaxial trisilane process can be used without the risk of poly stringers being formed. A base...
27	8119475	Method of forming gate of semiconductor device A method of forming a gate of a semiconductor device comprising providing a semiconductor substrate over which a gate insulating layer, a first conductive layer, a dielectric layer, and a second...
28	8110472	High power and high temperature semiconductor power devices protected by non-uniform ballasted sources A semiconductor power device is formed on a semiconductor substrate. The semiconductor power device includes a plurality of transistor cells distributed over different areas having varying amount...
29	8093131	Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof In a semiconductor device of the present invention, a first base region 16 is extended to a part under a gate electrode 7 while having a vertical concentration profile of an impurity that increases...
30	8067290	Bipolar transistor with base-collector-isolation without dielectric The disclosed invention provides a method for the fabrication of a bipolar transistor having a collector region comprised within a semiconductor body separated from an overlying base region by one...
31	8058121	Method for fabricating semiconductor device, method for fabricating bipolar-CMOS-DMOS A semiconductor device fabricating method is described. The semiconductor device fabricating method comprises forming an epitaxial layer on a substrate, wherein the epitaxial layer is the same...
32	8058124	Method of manufacturing a semiconductor device The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown...
33	8053843	Integrated electrostatic discharge (ESD) device A semiconductor device for ESD protection includes a semiconductor substrate of a first conductivity type and a well region of a second conductivity type formed within the substrate. The well...
34	8043910	Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode An integrated semiconductor structure includes a heterojunction bipolar transistor and a Schottky diode. The structure has a substrate, the heterojunction bipolar transistor overlying and...
35	8035196	Methods of counter-doping collector regions in bipolar transistors The present invention provides a method of forming a bipolar transistor. The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant...
36	8030167	Varied impurity profile region formation for varying breakdown voltage of devices Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a...
37	8026146	Method of manufacturing a bipolar transistor The invention provides for an alternative and less complex method of manufacturing a bipolar transistor comprising a field plate (17) in a trench (7) adjacent to a collector region (21), which...
38	8021951	Formation of longitudinal bipolar transistor with base region in trenches having emitter and collector regions disposed along portions of side surfaces of base region Provided is a semiconductor device including: a silicon substrate; at least two trenches spaced apart from each other, being in parallel with each other, and being formed by vertically etching the...
39	8003475	Method for fabricating a transistor structure A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate,...
40	8003473	Bipolar transistor with silicided sub-collector Embodiments of the invention provide a method of fabricating a semiconductor device. The method includes defining a sub-collector region in a layer of doped semiconductor material; forming an...
41	7989301	Semiconductor device with bipolar transistor and method of fabricating the same Disclosed is a semiconductor device with a bipolar transistor and method of fabricating the same. The device may include a collector region in a semiconductor substrate. A base pattern may be...
42	7981753	Method and device for electrostatic discharge protection A device for providing electrostatic discharge (ESD) protection is provided. The device includes a semiconductor substrate having a drain, a source, and a gate formed therein. The drain contains a...
43	7951681	Substrate-triggered bipolar junction transistor and ESD protection circuit An ESD protection circuit using a novel substrate-triggered lateral bipolar junction transistor (STLBJT) for providing a discharging path between power rails. The ESD protection circuit comprises...
44	7939414	Ion implantation and process sequence to form smaller base pick-up Methods for forming a bipolar junction transistor device are described herein. A method for forming the bipolar junction transistor device may include doping a first portion of a substrate with a...
45	7932155	Structure and method for performance improvement in vertical bipolar transistors A method of forming a semiconductor device having two different strains therein is provided. The method includes forming a strain in a first region with a first straining film, and forming a second...
46	7927955	Adjustable bipolar transistors formed using a CMOS process By providing a novel bipolar device design implementation, a standard CMOS process (105-109) can be used unchanged to fabricate useful bipolar transistors (80) and other bipolar devices having...
47	7915709	Semiconductor device and method of manufacturing the same The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of,...
48	7910448	Method for fabricating a mono-crystalline emitter Fabrication of a mono-crystalline emitter using a combination of selective and differential growth modes. The steps include providing a trench (14) formed on a silicon substrate (16) having opposed...
49	7910447	System and method for providing a self aligned bipolar transistor using a simplified sacrificial nitride emitter A system and method are disclosed for providing a self aligned bipolar transistor using a simplified sacrificial nitride emitter. An active region of a transistor is formed and a silicon nitride...
50	7897452	Method of producing a semiconductor device with an aluminum or aluminum alloy rear electrode A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by o...

Matches 1 - 50 out of 502

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