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8455269 Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices  
In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time...
8445352 Manufacturing method of semiconductor device  
A problem in the conventional technique is that metal contamination on a silicon carbide surface is not sufficiently removed in a manufacturing method of a semiconductor device using a...
RE44140 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns  
In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can...
8409959 Vertically base-connected bipolar transistor  
Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the...
8389995 Epitaxial solid-state semiconducting heterostructures and method for making same  
A method for producing a solid-state semiconducting structure, includes steps in which: (i) a monocrystalline substrate is provided;(ii) a monocrystalline oxide layer is formed, by epitaxial...
8389316 Strain bars in stressed layers of MOS devices  
A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS...
8384167 Semiconductor device with field effect transistor and manufacturing method thereof  
A semiconductor device includes: a semiconductor substrate in which a SiGe layer having a first width in a channel direction is embedded in a channel forming region; gate insulating film formed on...
8372723 Bipolar device having buried contacts  
This disclosure, in one aspect, provides a method of manufacturing a semiconductor device that includes forming a collector for a bipolar transistor within a semiconductor substrate, forming a...
8367510 Process for producing silicon carbide semiconductor device  
In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a...
8368177 Integrated circuit with ESD structure  
An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first...
8343841 Method for fabricating a semiconductor device  
A method for fabricating a semiconductor device includes forming a first semiconductor layer on a front side of the semiconductor substrate. Additional semiconductor layers may be formed on a font...
8334179 Semiconductor device and method for its production  
A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon...
8324044 Method of producing a semiconductor device with an aluminum or aluminum alloy electrode  
A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a...
8309436 Method of producing epitaxial substrate with gettering for solid-state imaging device, and method of producing solid-state imaging device using same substrate  
A method of producing an epitaxial substrate for a solid-state imaging device, comprising: forming a gettering sink by injecting laser beam to a semiconductor substrate through one surface...
8298901 Method for manufacturing bipolar transistors  
An improved method for manufacturing bipolar transistors is disclosed. The method for forming a PNP transistor comprises the steps of forming a P type collector on a substrate, forming a PNP...
8283234 Memory including bipolar junction transistor select devices  
An array is formed by a plurality of cells, wherein each cell is formed by a bipolar junction selection transistor having a first, a second, and a control region. The cell includes a common...
8269253 Rare earth enhanced high electron mobility transistor and method for fabricating same  
According to one embodiment, a high electron mobility transistor (HEMT) comprises an insulator layer comprising a first group III-V intrinsic layer doped with a rare earth additive. The HEMT also...
8247300 Control of dopant diffusion from buried layers in bipolar integrated circuits  
An integrated circuit and method of fabricating the integrated circuit is disclosed. The integrated circuit includes vertical bipolar transistors (30, 50, 60), each having a buried collector...
8247287 Method of fabricating a deep trench insulated gate bipolar transistor  
In one embodiment, a method comprises forming an epitaxial layer over a substrate of an opposite conductivity type, the epitaxial layer being separated by a buffer layer having a doping...
8242007 Semiconductor device formed using single polysilicon process and method of fabricating the same  
Provided are a semiconductor device including a source/drain and a gate formed using a doped polysilicon process, and a method of fabricating the semiconductor device. The method comprises:...
8232156 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance  
Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance, as well as fabrication methods for vertical heterojunction bipolar transistors and design structures...
8216910 Group III-V compound semiconductor based heterojunction bipolar transistors with various collector profiles on a common wafer  
A wafer comprising at least one high Ft HBT and at least one high BVceo HBT having various collector profiles on a common III-V compound semiconductor based wafer. The N+ implant in the collector...
8203173 Semiconductor integrated circuit  
A semiconductor integrated circuit has: a substrate; a basic logic cell placed on the substrate and configured to function as a part of a logic circuit; and a dummy cell placed on the substrate...
8158451 Method for manufacturing a junction  
The present invention relates to a semiconductor device comprising a homojunction or a heterojunction with a controlled dopant (concentration) profile and a method of making the same. Accordingly,...
8143910 Semiconductor integrated circuit and method of testing the same  
Provided is a semiconductor integrated circuit including: a first path that includes a first logic circuit; a second path that includes a second logic circuit; and a subsequent-stage circuit that...
8133765 Integrated RF ESD protection for high frequency circuits  
The invention relates to a high-frequency integrated circuit requiring ESD protection for a circuit node. One or more metallic layer is deposited within the integrated circuit and patterned to...
8133791 Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith  
The invention relates to a method according to the part of the surface of the semiconductor body adjoining the opening and which is to be kept free is provided with a cover layer after which the...
8129248 Method of producing bipolar transistor structures in a semiconductor process  
In the method of producing bipolar transistor structures in a semiconductor process, an advanced epitaxial trisilane process can be used without the risk of poly stringers being formed. A base...
8119475 Method of forming gate of semiconductor device  
A method of forming a gate of a semiconductor device comprising providing a semiconductor substrate over which a gate insulating layer, a first conductive layer, a dielectric layer, and a second...
8110472 High power and high temperature semiconductor power devices protected by non-uniform ballasted sources  
A semiconductor power device is formed on a semiconductor substrate. The semiconductor power device includes a plurality of transistor cells distributed over different areas having varying amount...
8093131 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof  
In a semiconductor device of the present invention, a first base region 16 is extended to a part under a gate electrode 7 while having a vertical concentration profile of an impurity that...
8067290 Bipolar transistor with base-collector-isolation without dielectric  
The disclosed invention provides a method for the fabrication of a bipolar transistor having a collector region comprised within a semiconductor body separated from an overlying base region by one...
8058121 Method for fabricating semiconductor device, method for fabricating bipolar-CMOS-DMOS  
A semiconductor device fabricating method is described. The semiconductor device fabricating method comprises forming an epitaxial layer on a substrate, wherein the epitaxial layer is the same...
8058124 Method of manufacturing a semiconductor device  
The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown...
8053843 Integrated electrostatic discharge (ESD) device  
A semiconductor device for ESD protection includes a semiconductor substrate of a first conductivity type and a well region of a second conductivity type formed within the substrate. The well...
8043910 Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode  
An integrated semiconductor structure includes a heterojunction bipolar transistor and a Schottky diode. The structure has a substrate, the heterojunction bipolar transistor overlying and...
8035196 Methods of counter-doping collector regions in bipolar transistors  
The present invention provides a method of forming a bipolar transistor. The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant...
8030167 Varied impurity profile region formation for varying breakdown voltage of devices  
Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a...
8026146 Method of manufacturing a bipolar transistor  
The invention provides for an alternative and less complex method of manufacturing a bipolar transistor comprising a field plate (17) in a trench (7) adjacent to a collector region (21), which...
8021951 Formation of longitudinal bipolar transistor with base region in trenches having emitter and collector regions disposed along portions of side surfaces of base region  
Provided is a semiconductor device including: a silicon substrate; at least two trenches spaced apart from each other, being in parallel with each other, and being formed by vertically etching the...
8003473 Bipolar transistor with silicided sub-collector  
Embodiments of the invention provide a method of fabricating a semiconductor device. The method includes defining a sub-collector region in a layer of doped semiconductor material; forming an...
8003475 Method for fabricating a transistor structure  
A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor...
7989301 Semiconductor device with bipolar transistor and method of fabricating the same  
Disclosed is a semiconductor device with a bipolar transistor and method of fabricating the same. The device may include a collector region in a semiconductor substrate. A base pattern may be...
7981753 Method and device for electrostatic discharge protection  
A device for providing electrostatic discharge (ESD) protection is provided. The device includes a semiconductor substrate having a drain, a source, and a gate formed therein. The drain contains a...
7951681 Substrate-triggered bipolar junction transistor and ESD protection circuit  
An ESD protection circuit using a novel substrate-triggered lateral bipolar junction transistor (STLBJT) for providing a discharging path between power rails. The ESD protection circuit comprises...
7939414 Ion implantation and process sequence to form smaller base pick-up  
Methods for forming a bipolar junction transistor device are described herein. A method for forming the bipolar junction transistor device may include doping a first portion of a substrate with a...
7932155 Structure and method for performance improvement in vertical bipolar transistors  
A method of forming a semiconductor device having two different strains therein is provided. The method includes forming a strain in a first region with a first straining film, and forming a...
7927955 Adjustable bipolar transistors formed using a CMOS process  
By providing a novel bipolar device design implementation, a standard CMOS process (105-109) can be used unchanged to fabricate useful bipolar transistors (80) and other bipolar devices having...
7915709 Semiconductor device and method of manufacturing the same  
The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of,...
7910448 Method for fabricating a mono-crystalline emitter  
Fabrication of a mono-crystalline emitter using a combination of selective and differential growth modes. The steps include providing a trench (14) formed on a silicon substrate (16) having...