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7615836 |
Magnetic self-assembly for integrated circuit packages
An integrated circuit package may include a substrate and an integrated circuit. The substrate may include at least one region, and a first magnetic material associated with the at least one...
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7615441 |
Forming high-k dielectric layers on smooth substrates
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The...
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7611913 |
Ferroelectric rare-earth manganese-titanium oxides
Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.
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7611912 |
Underlayer for high performance magnetic tunneling junction MRAM
An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in...
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7611911 |
Method and system for patterning of magnetic thin films using gaseous transformation to transform a magnetic portion to a non-magnetic portion
A method (and resulting structure) of patterning a magnetic thin film, includes using a chemical transformation of a portion of the magnetic thin film to transform the portion to be non-magnetic...
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7610670 |
Method for manufacturing a diaphragm assembly
A diaphragm assembly used for a condenser microphone has a diaphragm made of a resin film including a metallized film on one surface of a supporter ring. The diaphragm is made by a first step of...
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7608467 |
Switchable resistive perovskite microelectronic device with multi-layer thin film structure
A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises...
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7605417 |
Assemblies comprising magnetic elements and magnetic barrier or shielding at least partially around the magnetic elements
The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the...
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7605007 |
Semiconductor device and method of manufacturing the same
An upper electrode film includes a first conductive oxidation layer made of an oxide expressed by a chemical formula M 1 O x2 , a second conductive oxidation layer made of an oxide expressed by a...
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7605006 |
Method of manufacturing a magnetic head
In forming a narrow pattern, it is difficult to form a lift-off resist pattern with an overhang shape. Accordingly, it results in a phenomenon in which the angle at the end of the GMR layer is...
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7602032 |
Memory having cap structure for magnetoresistive junction and method for structuring the same
A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed...
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7601548 |
Methods of fabricating ferroelectric capacitors having oxidation barrier conductive layers and lower electrodes disposed in trenches defined by supporting insulating layers
Ferroelectric capacitors are provided that include an integrated circuit substrate and a supporting insulation layer on the integrated circuit substrate having a face and a trench in the face. An...
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7601547 |
Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and...
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7598597 |
Segmented magnetic shielding elements
A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of...
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7598097 |
Method of fabricating a magnetic shift register
A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. A trench is etched in the...
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7598096 |
Methods of forming ferroelectric crystals as storage media and structures formed thereby
Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a conductive layer on a single crystal ferroelectric material, patterning the...
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7598095 |
Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same
A ferroelectric capacitor comprises a first electrode comprising an alloy containing a first element and a second element of the periodic table of the elements, the first element being selected...
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7595520 |
Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle...
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7595203 |
Ferroelectric memory device with a conductive polymer layer and a method of formation
A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a...
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7592657 |
Semiconductor device and method of manufacturing the same
According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film 11 , a crystalline conductive film 21 , a first...
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7592189 |
MRAM and method of manufacturing the same
A magnetic memory device comprising, a magneto-resistance effect element that is provided at an intersection between a first write line and a second write line. And the magneto-resistance effect...
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7588945 |
Multi-state thermally assisted storage
A process for manufacturing a random access memory cell, that is capable of storing multiple information states in a single physical bit, is described. The basic structure combines a conventional...
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7585683 |
Methods of fabricating ferroelectric devices
A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the...
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7582941 |
Magnetic memory device and method of fabricating the same
A magnetic memory device includes a common line; a first write-in diode, a readout diode and a second write-in diode being connected to the common line in parallel. The magnetic memory device...
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7582549 |
Atomic layer deposited barium strontium titanium oxide films
Apparatus and methods of forming the apparatus include a dielectric layer containing barium strontium titanium oxide layer, an erbium-doped barium strontium titanium oxide layer, or a combination...
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7582489 |
Method for manufacturing magnetic sensor apparatus
A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The...
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7579197 |
Method of forming a magnetic tunnel junction structure
In a particular illustrative embodiment, a method of forming a magnetic tunnel junction (MTJ) device is disclosed that includes forming a trench in a substrate. The method further includes...
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7579196 |
Interconnect connecting a diffusion metal layer and a power plane metal and fabricating method thereof
A giant magnetoresistance (GMR) pad on the same level of GMR memory bit layer is used as an intermediate connection for plugs between the GMR pad and an underlying diffusion metal layer. A single...
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7576377 |
Ferroelectric memory device and manufacturing method thereof
A ferroelectric memory device includes a semiconductor substrate, a first insulating film, a plurality of first and second plugs which extend through the first insulating film, conductive hydrogen...
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7575940 |
Dielectric film, method of manufacturing the same, and semiconductor capacitor having the dielectric film
Provided are a dielectric film, a method of manufacturing the same, and a semiconductor capacitor having the dielectric film. The semiconductor capacitor includes a lower electrode, a ferroelectric...
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7572646 |
Magnetic random access memory with selective toggle memory cells
A toggle MTJ is disclosed that has a SAF free layer with two or more magnetic sub-layers having equal magnetic moments but different anisotropies which is achieved by selecting Ni ˜0.8 Fe ˜0.2 ...
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7572645 |
Magnetic tunnel junction structure and method
Methods and apparatus are provided for magnetic tunnel junctions (MTJs) ( 10, 50 ) employing synthetic antiferromagnet (SAF) free layers ( 14, 14′ ). The MTJ ( 10, 50 ) comprises a pinned...
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7569401 |
Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same
Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed...
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7569400 |
Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory
A ferroelectric film having a ferroelectric shown by a general formula (Pb 1-d Bi d )(B 1-a X a )O 3 , B including at least one of Zr and Ti, X including at least one of Nb and Ta, “a” being in...
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7564238 |
Magnetic detection device connecting element and detection circuit and method of manufacturing the same
A magnetic detection device has stable characteristics having an area of a resist layer covering an insulating passivation layer, forming the magnetic detection element and a connection layer on a...
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7564109 |
MRAM and method of manufacturing the same
A magnetic memory device includes a first write wiring line including a wiring layer formed in a trench in an insulation layer, a barrier metal layer buried in the trench over the wiring layer. And...
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7560760 |
Ferroelectric memory devices having expanded plate lines
A ferroelectric memory device includes a microelectronic substrate and a plurality of ferroelectric capacitors on the substrate, arranged as a plurality of row and columns in respective row and...
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7554837 |
Magnetic memory device
A width and a thickness of a bit line are represented as W 1 and T 1 , respectively, a thickness of a digit line is represented as T 2 , and a distance from a center of the digit line in a...
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7554145 |
Magnetic memory cells and manufacturing methods
An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced...
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7554144 |
Memory device and manufacturing method
A memory device includes first and second electrodes separated by an insulating member comprising upwardly and inwardly tapering surfaces connected by a surface segment. A bridge, comprising memory...
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7553677 |
Method for manufacturing ferroelectric memory
A method for manufacturing a ferroelectric memory includes the steps of: (a) forming a ferroelectric capacitor by sequentially laminating, on a substrate, a lower electrode, a ferroelectric layer...
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7550392 |
Semiconductor device and method of manufacturing the same
A semiconductor device manufacturing method, includes a step of forming a first alumina film (underlying insulating film) 37 on a semiconductor substrate 20 , a step of forming a first...
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7550344 |
Semiconductor device and method for fabricating the same
A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper...
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7550302 |
Method of manufacturing semiconductor device
The present invention provides a method of manufacturing a semiconductor device. The method includes the steps of forming a first interlayer insulating film over a silicon substrate; forming a...
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7548408 |
Capacitor and its manufacturing method
A method for manufacturing a capacitor includes the steps of: forming a conductive layer above a base substrate; forming a dielectric layer above the conductive layer; forming a lanthanum nickelate...
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7547559 |
Method for forming MRAM bit having a bottom sense layer utilizing electroless plating
The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor in a trench is provided in an insulating...
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7547558 |
Method for manufacturing semiconductor device
An Al 2 O 3 film for covering a ferroelectric capacitor is formed by a sputtering process. The thickness of the Al 2 O 3 film is preferably optimized according to amount of remanent polarization...
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7545662 |
Method and system for magnetic shielding in semiconductor integrated circuit
A circuit with an inter-module radiation interference shielding mechanism is disclosed. The circuit includes a circuit module producing a radiation field. At least one radiation shielding module is...
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7541199 |
Methods of forming magnetic memory devices including oxidizing and etching magnetic layers
Methods of forming a magnetic memory device include oxidizing a top magnetic layer using a conductive capping pattern as a mask. An etch selectivity between an oxidized portion of the top magnetic...
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7539051 |
Memory storage devices comprising different ferromagnetic material layers, and methods of making and using the same
A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L 1 ) and a first...
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