|
Match
|
Document |
Document Title |
|
|
8183653 |
Magnetic tunnel junction having coherent tunneling structure
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a...
|
|
|
8183654 |
Static magnetic field assisted resistive sense element
Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense...
|
|
|
8183061 |
High density spin-transfer torque MRAM process
A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad...
|
|
|
8183594 |
Laminar structure on a semiconductor substrate
An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of γ-Al2O3 formed as a buffer layer on a silicon ...
|
|
|
8183109 |
Semiconductor device and method of manufacturing the same
Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of: forming a hydrogen diffusion preventing insulating film covering capacitors; forming a capacitor...
|
|
|
8178361 |
Magnetic sensor and manufacturing method therefor
There is provided a small-size magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a...
|
|
|
8178363 |
MRAM with storage layer and super-paramagnetic sensing layer
An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed...
|
|
|
8178362 |
Electronically scannable multiplexing device
An electronically scannable multiplexing device is capable of addressing multiple bits within a volatile or non-volatile memory cell. The multiplexing device generates an electronically scannable...
|
|
|
8173446 |
Method of producing an integrated micromagnet sensor assembly
A method of integrating a permanent bias magnet within a magnetoresistance sensor comprising depositing an alternating pattern of a metal material and a semiconductor material on or within a...
|
|
|
8173447 |
Magnetoresistive element and magnetic memory
A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization...
|
|
|
8174086 |
Magnetoresistive element, and magnetic random access memory
A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a...
|
|
|
8168449 |
Template-registered diblock copolymer mask for MRAM device formation
A method for fabricating a magnetoresistive random access memory (MRAM) includes forming a mask over a magnetic layer; forming a template on the mask; applying a diblock copolymer to the template;...
|
|
|
8168448 |
Ferroelectric register, and method for manufacturing capacitor of the same
The present invention discloses a ferroelectric register and a method for manufacturing a capacitor of the same. The ferroelectric register is configured to reduce probability of data storage...
|
|
|
8163569 |
Magnetic memory devices and methods of forming the same
Provided are a magnetic memory device and a method of forming the same. The method may include forming a pinning pattern on a substrate; forming a first interlayer insulating layer that exposes the...
|
|
|
8164148 |
Method of generating strong spin waves and spin devices for ultra-high speed information processing using spin waves
Provided are a method of generating strong spin waves, a method of simultaneously generating spin waves and electromagnetic waves, a logic operation device using spin waves, a variety of spin wave...
|
|
|
8158445 |
Methods of forming pattern structures and methods of manufacturing semiconductor devices using the same
Methods of forming pattern structures and methods of manufacturing memory devices using the same are provided, the methods of forming pattern structures include forming an etching object layer on a...
|
|
|
8153447 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Nonvolatile ferroelectric perpendicular electrode cell, FeRAM having the cell and method for manufacturing the cell
A nonvolatile ferroelectric perpendicular electrode cell comprises a ferroelectric capacitor and a serial PN diode switch. The ferroelectric capacitor includes a word line perpendicular electrode...
|
|
|
8153448 |
Manufacturing method of a semiconductor device
There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular...
|
|
|
8153449 |
Microwave integrated circuit package and method for forming such package
A method for packaging a semiconductor device. The method includes: providing a dielectric layer over the semiconductor device; determining patterns and placement of material on the dielectric...
|
|
|
8148174 |
Magnetic tunnel junction (MTJ) formation with two-step process
A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact...
|
|
|
8143683 |
In-situ formed capping layer in MTJ devices
A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of...
|
|
|
8137571 |
Method for manufacturing perpendicular magnetic recording head
Embodiments of the present invention help to provide a method for manufacturing a perpendicular magnetic recording head including a main magnetic pole having a width that does not generally vary....
|
|
|
8138562 |
Bit line preparation method in MRAM fabrication
A MRAM structure is disclosed that includes a metal contact bridge (MCB) which provides an electrical connection between a MTJ top electrode and an overlying bit line. The MCB has a width greater...
|
|
|
8134860 |
Shunted phase change memory
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may...
|
|
|
8133745 |
Method of magnetic tunneling layer processes for spin-transfer torque MRAM
A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps and two etch steps...
|
|
|
8129770 |
Semiconductor device and manufacturing method thereof
A semiconductor device includes a silicon substrate having an active region, a memory transistor having a pair of source/drain regions and a gate electrode layer, a hard mask layer on the gate...
|
|
|
8129200 |
Nonvolatile ferroelectric memory device and method for manufacturing the same
A nonvolatile ferroelectric memory device includes a plurality of unit cells. Each of the unit cells includes a cell capacitor and a cell transistor. The cell capacitor includes a storage node, a...
|
|
|
8129767 |
Ferroelectric polymer memory module
Ferroelectric polymer memory modules are described. In an example, a module has a first set of layers including a first ILD layer defining trenches therein, a first electrode layer disposed in the...
|
|
|
8124426 |
Tunnel junction via
A method for forming a tunnel junction (TJ) circuit, the method includes forming a bottom wiring layer; forming a plurality of TJs contacting the bottom wiring layer; forming a plurality of tunnel...
|
|
|
8125814 |
Magnetic memory, driving method thereof, and manufacturing method thereof
A magnetic memory, a driving method thereof, and a manufacturing method thereof are provided. The magnetic memory includes a plurality of lead structures, a plurality of first magnetic metal...
|
|
|
8124476 |
Semiconductor device and method of manufacturing the same
Provided is a semiconductor device, including a silicon substrate, a first insulating film formed on the silicon substrate, a first conductive plug formed in an inside of a first contact hole of...
|
|
|
8125040 |
Two mask MTJ integration for STT MRAM
A method for forming a magnetic tunnel junction (MTJ) for magnetic random access memory (MRAM) using two masks includes depositing over an interlevel dielectric layer containing an exposed first...
|
|
|
8124425 |
Method for manufacturing magnetic memory chip device
A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high...
|
|
|
8119514 |
Cobalt-doped indium-tin oxide films and methods
Methods of forming cobalt-doped indium-tin oxide structures are shown. Properties of structures include transparency, conductivity, and ferromagnetism. Monolayers that contain indium, monolayers...
|
|
|
8120126 |
Magnetic tunnel junction device and fabrication
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling...
|
|
|
8120178 |
Tuning fork vibration device and method for manufacturing the same
A tuning fork vibration device includes: a SOI substrate having a substrate, an oxide layer formed above the substrate and a semiconductor layer formed above the oxide layer; a tuning fork type...
|
|
|
8119425 |
Method of forming magnetic memory device
There are provided a magnetic memory device and a method of forming the magnetic memory device. The method of forming the magnetic memory device includes sequentially forming a first magnetic...
|
|
|
8119424 |
Electronic device including a magneto-resistive memory device and a process for forming the electronic device
A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than...
|
|
|
8114684 |
Vertical hall effect sensor with current focus
A complementary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped substrate, a doped central island extending downwardly within the doped substrate from an upper...
|
|
|
8110882 |
Semiconductor device with magnetic powder mixed therein and manufacturing method thereof
A semiconductor device includes a semiconductor substrate on one side of which an integrated circuit and a plurality of connection pads connected to the integrated circuit are provided. An...
|
|
|
8110411 |
Semiconductor device and manufacturing method thereof
The present invention provides a semiconductor device which is characterized as follows. The semiconductor device includes: an interlayer insulating film formed above a semiconductor substrate and...
|
|
|
8105884 |
Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters
A cross point memory array includes a structure in which holes are formed in an insulating layer and a storage node is formed in each of the holes. The storage node may include a memory resistor...
|
|
|
8106382 |
Field effect transistor
A source electrode 105 which is connected to a portion of at least one semiconductor nanostructure 103 among a plurality of semiconductor nanostructures, a drain electrode 106 connected to another...
|
|
|
8106434 |
Semiconductor device with a superparaelectric gate insulator
A semiconductor device includes a channel region 18 of semiconductor, a conductive gate electrode 12 adjacent to the channel region 18 and a gate dielectric 10 between the conductive gate electrode...
|
|
|
8105445 |
Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks
A method (and structure) of thermally treating a magnetic layer of a wafer, includes annealing, for a predetermined short duration, a magnetic layer of a single wafer.
|
|
|
8105850 |
Process for selectively patterning a magnetic film structure
Processes for selectively patterning a magnetic film structure generally include selectively etching an exposed portion of a freelayer disposed on a tunnel barrier layer by a wet process, which...
|
|
|
8102022 |
Semiconductor device manufacturing method and semiconductor device
In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal...
|
|
|
8093070 |
Method for leakage reduction in fabrication of high-density FRAM arrays
A method is provided for fabricating a ferroelectric capacitor structure including a method for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The...
|
|
|
8093069 |
Functionalized nitride nanomaterials for electrochemistry and biosensor applications
This invention refers to surface modification/functionalization of Nitride nanomaterials and electrochemistry and optical measurement based upon such functionalized Nitride materials. With this...
|
|
|
8093071 |
Semiconductor device and method of manufacturing the same
According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film 11, a crystalline conductive film 21, a first...
|