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7198959 |
Process for fabrication of a ferrocapacitor
In a process for fabricating a ferrocapacitor comprising providing ferroelectric PZT elements over an Al 2 O 3 layer, the Al 2 O 3 layer is covered with a seed layer comprising layers of PZT and...
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7195929 |
MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the same
In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor...
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7196955 |
Hardmasks for providing thermally assisted switching of magnetic memory elements
An exemplary magnetic random access memory comprises a plurality of hardmasks, a plurality of magnetic memory elements each having been formed using a corresponding one of the hardmasks, and at...
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7195927 |
Process for making magnetic memory structures having different-sized memory cell layers
An exemplary method for making a memory structure having different-sized memory cell layers comprises forming at least two layers of ferromagnetic materials, forming at least one mask layer above...
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7195928 |
Method of manufacturing ferroelectric substance thin film and ferroelectric memory using the ferroelectric substance thin film
The invention provides a method for forming a ferroelectric thin film that is uniform and good in crystallinity. The method includes applying a liquid to a surface of a substrate. The liquid...
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7192885 |
Method for texturing surfaces of silicon wafers
A method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and...
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7192799 |
Matrix type piezoelectric/electrostrictive device and manufacturing method thereof
A method of making a matrix type piezoelectric/electrostrictive device having a plurality of pillar shaped piezoelectric/electrostrictive elements, each having a piezoelectric/electrostrictive...
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7192787 |
Highly nonlinear magnetic tunnel junctions for dense magnetic random access memories
MRAMs are provided with cells offering low current leakage for partially selected cells. MRAM cells are made with magnetic tunnel junctions having barriers that meet predetermined low barrier...
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7192788 |
Semiconductor device and manufacturing method of the same
The present invention intends to provide a technique that can improve the capacitance density while securing the withstand voltage of a capacitor element. In order to achieve the above object, the...
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7188411 |
Process for forming portions of a compound material inside a cavity
A process for forming portions of a compound material within an electronic circuit includes the formation of a cavity having at least one opening facing onto an access surface. The cavity...
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7190013 |
ISFET using PbTiO3 as sensing film
A PbTiO 3 /SiO 2 -gated ISFET device comprising a PbTiO 3 thin film as H + -sensing film, and a method of forming the same. The PbTiO 3 thin film is formed through a sol-gel process which offers...
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7186571 |
Method of fabricating a compositionally modulated electrode in a magnetic tunnel junction device
A magnetic tunnel junction device with a compositionally modulated electrode and a method of fabricating a magnetic tunnel junction device with a compositionally modulated electrode are disclosed....
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7186572 |
Simplified bottom electrode-barrier structure for making a ferroelectric capacitor stacked on a contact plug
The present invention is related to the realization of a simplified bottom electrode stack for ferroelectric memory cells. More particularly, the invention is related to ferroelectric memory cells...
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7186570 |
Method of manufacturing ceramic film, method of manufacturing ferroelectric capacitor, ceramic film, ferroelectric capacitor, and semiconductor device
A lower electrode is formed over a substrate, and a raw material including a complex oxide is heated in an atmosphere pressurized to two atmospheres or more and containing oxygen at a volume ratio...
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7183120 |
Etch-stop material for improved manufacture of magnetic devices
A method for fabricating a magnetoresistive device having at least one active region, which may be formed into a magnetic memory bit, sensor element and/or other device, is provided. In forming the...
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7183121 |
Process for fabrication of a ferrocapacitor
A process for fabricating a ferrocapacitor comprises etching a layer of amorphous PZT formed over a layer having a low concentration of nucleation centres for PZT crystallisatlon. The etching step...
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7183186 |
Atomic layer deposited ZrTiO4 films
After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber 220, at block 430. In an embodiment, the zirconium-containing precursor is ZTB. In other...
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7183601 |
Semiconductor device and method for manufacturing thereof
Disclosed in a semiconductor device comprising a semiconductor substrate, and a ferroelectric layer provided above the semiconductor substrate and sandwiched between a lower electrode and an upper...
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7176132 |
Manufacturing method of semiconductor device
There are provided a step of forming an insulating film over a semiconductor substrate, a step of exciting a plasma of a gas having a molecular structure in which hydrogen and nitrogen are bonded...
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7176510 |
Thin film capacitor
A thin film capacitor includes a pair of electrodes and a dielectric layer having piezoelectricity sandwiched therebetween. The phase characteristic of an impedance resulting from application of a...
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7176100 |
Capacitor and its manufacturing method, and semiconductor device
A method is provided for manufacturing a capacitor including the steps of forming a lower electrode on a substrate, forming an insulation film formed of a perovskite type metal oxide on the lower...
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7176038 |
Ferroelectric element and method for manufacturing the same
In a ferroelectric element, the ferroelectric film is prevented from deteriorating and the interconnect film from lowering in reliability. A ferroelectric element includes a first electrode, a...
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7169621 |
Ferroelectric memory device
A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged...
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7169619 |
Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
High quality epitaxial layers of monocrystalline oxide materials ( 24 ) can be grown overlying monocrystalline substrates ( 22 ) such as large silicon wafers. The monocrystalline oxide layer ( 24 )...
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7169622 |
Magnetoresistive random access memory devices and methods for fabricating the same
Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A...
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7169624 |
Shared bit line cross-point memory array manufacturing method
A shared bit line cross-point memory array structure is provided, along with methods of manufacture. The memory structure comprises a bottom word line with a top word line overlying the bottom word...
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7169623 |
System and method for processing a wafer including stop-on-aluminum processing
Magnetic tunnel junction (MTJ) devices can be fabricated by a stop-on-alumina process whereby the tunnel junction layer serves as the stop layer during plasma overetching of the upper magnetic...
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7169658 |
Method for formation of an ultra-thin film and semiconductor device containing such a film
A method of manufacturing an ultra-thin PZT pyrochlore film comprises providing a structure comprising a base layer, and forming on the base layer, a titanium layer and a PZT layer in mutual...
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7166884 |
Method for fabricating semiconductor device and semiconductor device
As a method for fabricating a semiconductor device, a lower electrode is first formed on a semiconductor substrate and then a first ferroelectric film is formed on the lower electrode by CVD using...
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7166881 |
Multi-sensing level MRAM structures
The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the...
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7166479 |
Methods of forming magnetic shielding for a thin-film memory element
A monolithically formed ferromagnetic thin-film memory is disclosed that has local shielding on at least two sides of selected magnetic storage elements. The local shielding preferably extends...
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7163828 |
Electrode, method of manufacturing the same, ferroelectric memory, and semiconductor device
The present invention relates to a method of manufacturing an electrode which includes forming an electrode over a substrate. Initial crystal nuclei of an electrode material are formed over the...
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7163874 |
Ferroelectric thin film manufacturing method, ferroelectric element manufacturing method, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic apparatus
A ferroelectric element manufacturing method includes the steps of forming a buffer layer, which also functions as a sacrificial layer, on a single crystal substrate, forming a ferroelectric film...
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7164181 |
Spin injection devices
Devices such as transistors, amplifiers, frequency multipliers, and square-law detectors use injection of spin-polarized electrons from one magnetic region, into another through a control region...
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7161225 |
Reducing shunts in memories with phase-change material
A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer....
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7160738 |
Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and...
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7160737 |
Method for fabricating semiconductor device
A material of low viscosity is applied to a ferroelectric film 32 formed by MOCVD to form a buried layer 34. Then, anisotropic etching is made on the entire surface to remove the tops of...
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7161200 |
Capacitive element and method of manufacturing the same
A capacitive element which includes: a silicon substrate (base material) 1 ; a base insulating film 2 formed on the silicon substrate 1 ; and a capacitor Q constituted by forming a bottom...
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7157287 |
Method of substrate surface treatment for RRAM thin film deposition
A method of fabricating a CMR thin film for use in a semiconductor device includes preparing a CMR precursor in the form of a metal acetate based acetic acid solution; preparing a wafer; placing a...
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7157288 |
Method of producing ferroelectric capacitor
A method of producing a ferroelectric capacitor includes the steps of: preparing a semiconductor substrate; forming a first insulating layer on the semiconductor substrate; laminating sequentially...
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7157760 |
Magnetic memory device and method of manufacturing magnetic memory device
The present invention provides a magnetic memory device capable of stably writing information by efficiently using a magnetic field generated by current flowing in a conductor, which can be...
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7153706 |
Ferroelectric capacitor having a substantially planar dielectric layer and a method of manufacture therefor
The present invention provides a ferroelectric capacitor, a method of manufacture therefor, and a method of manufacturing a ferroelectric random access memory (FeRAM) device. The ferroelectric...
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7153763 |
Method for making a semiconductor device including band-engineered superlattice using intermediate annealing
A method for making a semiconductor device may include forming a superlattice including a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base...
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7153707 |
Method for forming a storage cell capacitor compatible with high dielectric constant materials
An integrated circuit structure includes a digit line and an electrode adapted to be part of a storage cell capacitor and includes a barrier layer interposed between a conductive plug and an...
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7153704 |
Method of fabricating a ferroelectric capacitor having a ferroelectric film and a paraelectric film
A method of fabricating a ferroelectric capacitor that can inhibit ferroelectric characteristics from deteriorating includes forming a lower electrode film over from on a top surface of a plug...
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7153705 |
Electronic device with electrode and its manufacture
A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO 3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite...
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7153708 |
Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides
A method of forming a ferroelectric thin film on a high-k layer includes preparing a silicon substrate; forming a high-k layer on the substrate; depositing a seed layer of ferroelectric material at...
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7151288 |
Semiconductor device and method of manufacturing the same
A semiconductor device comprises a semiconductor substrate, a conductive plug electrically connected to the semiconductor substrate, a silicon carbide film provided on the conductive plug, a metal...
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7151001 |
Fabrication method of self-aligned ferroelectric gate transistor using buffer layer of high etching selectivity
A fabrication method of a self-aligned ferroelectric gate transistor using a buffer layer of high etching selectivity is disclosed. A stacked structure is formed with a buffer layer with high...
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7148072 |
Method and apparatus for oxidizing conductive redeposition in TMR sensors
A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR barrier layer is etched. Redeposition material is oxidized and the barrier is healed using an...
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