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7259025 |
Ferromagnetic liner for conductive lines of magnetic memory cells
A method of forming a ferromagnetic liner on conductive lines of magnetic memory devices and a structure thereof. The ferromagnetic liner increases the flux concentration of current run through the...
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7259023 |
Forming phase change memory arrays
A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with...
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7256429 |
Memory cell with buffered-layer
A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom...
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7256088 |
Semiconductor device and manufacturing method thereof
A semiconductor device of the present invention includes capacitors made up of a lower electrode, a capacitive insulation film made from metal oxide material, provided on one surface of a...
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7253009 |
Method of producing an integrated circuit arrangement with field-shaping electrical conductor
An integrated circuit arrangement includes at least one electrical conductor that, when a current flows through it, produces a magnetic field that acts on at least a further part of the circuit...
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7247505 |
Magnetic memory device having magnetic shield layer, and manufacturing method thereof
A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on...
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7247506 |
Method for producing magnetic memory device
There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device...
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7247503 |
Method of laser annealing to form an epitaxial growth layer
A method for forming an epitaxial layer in a capacitor over interconnect structure, includes selecting a laser having a suitable wavelength for absorption at a seeding layer/annealing layer...
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7247551 |
Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device
The invention provides a substrate for an electronic device including a conductive oxide layer which is formed by epitaxial growth with cubic crystal (100) orientation or pseudo-cubic crystal (100)...
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7247504 |
Ferroelectric capacitor, process for production thereof and semiconductor device using the same
A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a...
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7242047 |
Magnetic memory adopting synthetic antiferromagnet as free magnetic layer
A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic...
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7241631 |
MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
A method and system for providing a magnetic element are disclosed. The method and system include providing first and second pinned layers, a free layer, and first and second barrier layers between...
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7241661 |
Method of forming a coupling dielectric Ta2O5 in a memory device
A method of forming a coupling dielectric in a memory cell includes forming an oxide on a substrate, forming Ta 2 O 5 on the oxide, oxidizing the Ta 2 O 5 with rapid thermal process (RTP) at a...
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7242067 |
MRAM sense layer isolation
A process for forming an MRAM element. The process comprises patterning a globally deposited sense layer and then forming a spacer about the patterned sense layer so as to cover the lateral edges...
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7238540 |
Magnetic random access memory and method of manufacturing the same
A magnetic random access memory includes a substrate; a first ferromagnetic layer; a magnetic tunnel junction (MTJ) device provided on a same side of the substrate as the first ferromagnetic layer;...
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7238541 |
Method of incorporating magnetic materials in a semiconductor manufacturing process
A method for incorporating magnetic materials in a semiconductor manufacturing process includes manufacturing a semiconductor device including interlayers and dielectric layers, depositing a...
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7238979 |
Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM
An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer...
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7235409 |
Methods of forming semiconductor constructions
The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the...
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7235408 |
Synthetic antiferromagnetic structure for magnetoelectronic devices
A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers...
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7235407 |
System and method for forming a bipolar switching PCMO film
A multi-layer Pr x Ca 1-x MnO 3 (PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom...
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7232692 |
Photo-imaged stress management layer for semiconductor devices
A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address...
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7232693 |
Method for manufacturing ferroelectric memory
A semiconductor substrate formed with a MOSFET is prepared, and a first interlayer insulating film is deposited on the semiconductor substrate. A ferroelectric capacitor is formed on the first...
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7229914 |
Wiring layer structure for ferroelectric capacitor
Wiring layers through that come into direct contact with an electrode of a ferroelectric capacitor provide a wiring layer structure configured so that the characteristic of the ferroelectric...
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7230804 |
Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter
A magnetic tunnel transistor (MTT) is formed with a self-pinned emitter layer. The self-pinned emitter layer decreases resistance in by eliminating a thick resistive adjacent anti-ferromagnetic...
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7227171 |
Small area contact region, high efficiency phase change memory cell and fabrication method thereof
A contact structure, including a first conducting region having a first thin portion with a first sublithographic dimension in a first direction; a second conducting region having a second thin...
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7226796 |
Synthetic antiferromagnet structures for use in MTJs in MRAM technology
A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of...
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7226795 |
Semiconductor-ferroelectric storage devices and processes for producing the same
The MFIS transistors heretofore have a problem that after data writing, the data disappear in terms of memory transistor operation in about one day at most. This is mainly because the buffer layer...
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7223614 |
Method for manufacturing semiconductor device, and semiconductor device
A first hydrogen barrier film and an intermediate layer are formed on an interlayer dielectric film. A ferroelectric capacitor is formed on the intermediate layer, and a second hydrogen barrier...
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7223612 |
Alignment of MTJ stack to conductive lines in the absence of topography
A scheme for aligning opaque material layers of a semiconductor device. Alignment marks are formed in a via level of the semiconductor device. The alignment marks are formed using a separate...
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7223613 |
Ferroelectric polymer memory with a thick interface layer
According to one aspect of the invention, a memory array and a method of constructing a memory array are provided. An insulating layer is formed on a semiconductor substrate. A first metal stack is...
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7221013 |
Semiconductor device
A semiconductor device includes: an insulating underlying layer of which surface portion has a concave portion; a lower electrode formed on the underlying layer along the inner face of the concave...
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7221237 |
Frequency tunable device
A frequency tunable device includes a substrate, and a capacitor structure supported by the substrate and including a ferroelectric film and first and second electrodes. The ferroelectric film has...
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7220598 |
Method of making ferroelectric thin film having a randomly oriented layer and spherical crystal conductor structure
A method of making a ferroelectric thin film includes the step of forming a ferroelectric thin film with a randomly oriented layered structure on a surface of a conductor layer. At least the...
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7220599 |
Method for manufacturing magneto-resistive random access memory
A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first...
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7220600 |
Ferroelectric capacitor stack etch cleaning methods
Methods ( 100 ) are provided for fabricating a ferroelectric capacitor structure including methods ( 128 ) for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor...
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7220602 |
Magnetic tunnel junction sensor method
Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and...
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7217666 |
Reactive ion milling/RIE assisted CMP
A method for forming a high aspect ratio magnetic structure in a magnetic write head using a combination of chemical mechanical polishing and reactive ion etching.
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7217576 |
Method for manufacturing ferroelectric capacitor, method for manufacturing ferroelectric memory, ferroelectric capacitor and ferroelectric memory
A method for manufacturing a ferroelectric capacitor in accordance with the present invention includes: (a) a step of forming a ferroelectric laminated body by successively laminating a lower...
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7217577 |
Structure/method to fabricate a high-performance magnetic tunneling junction MRAM
An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping...
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7211511 |
Method for manufacturing a magnetic memory device
In bit line cladding structure formation, stability and margin of the process are secured and further shrinking is achieved, and the magnetic memory device is improved in speed, reliability and...
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7211446 |
Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed...
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7208323 |
Method for forming magneto-resistive memory cells with shape anisotropy
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened...
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7208324 |
Liquid composition for forming ferroelectric thin film and process for producing ferroelectric thin film
It is an object to provide a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature,...
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7207097 |
Method for making an actuator assembly for supporting a read/write device in an information storage device
An actuator assembly for supporting a read/write device in an information storage device having an actuator arm having at least one tower protruding from a first surface of the actuator arm, a...
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7205164 |
Methods for fabricating magnetic cell junctions and a structure resulting and/or used for such methods
Methods for patterning a magnetic cell junction and a topography used for and/or resulting from such methods are provided. In particular, a method is provided which includes etching portions of a...
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7205594 |
Semiconductor device with capacitor and manufacturing method of the same
The present invention relates to a semiconductor device having capacitors. The configuration of the device includes: capacitor upper electrodes 14 a , 14 b formed via a dielectric film 13 on...
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7205256 |
Oxide material, method for preparing oxide thin film and element using said material
An oxide material characterized by that it has a perovskite structure comprising an oxide represented by ABO 3 , (Bi 2 O 2 ) 2+ (A m−1 B m O 3m+1 ) 2− wherein A represents one kind or two or...
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7205163 |
Curvature anisotropy in magnetic bits for a magnetic random access memory
A magnetic memory cell that uses a curved magnetic region to create magnetic anisotropy is provided by the present invention. The magnetic memory cell is created from a free magnetic layer, a...
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7199002 |
Process for fabrication of a ferroelectric capacitor
A process for the fabrication of a ferroelectric capacitor comprising depositing a layer of Ti 5 over an insulating layer 3 of Al 2 O 3 , and oxidising the Ti layer to form a TiO 2 layer 7. ...
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7198960 |
Method for fabricating ferroelectric capacitor
A method for fabricating a ferroelectric memory having memory cells arranged in arrays, wherein an Al 2 O 3 film ( 2 ), a Pt film ( 3 ), a PZT film ( 4 ) and IrO 2 film ( 5 ) are formed on an...
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