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7498625 |
Semiconductor device and manufacturing method thereof
A ferroelectric capacitor including a bottom electrode ( 15 ), a ferroelectric film ( 16 ) and a top electrode ( 17 ) is covered with an interlayer insulating film ( 18 ). One end of the bottom...
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7498179 |
Semiconductor device having ferroelectric material capacitor and method of making the same
The present invention relates to the field of a semiconductor device having a ferroelectric material capacitor and method of making the same. The semiconductor device includes a capacitor having a...
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7494825 |
Top contact alignment in semiconductor devices
According to an example embodiment, a semiconductor device includes a lower electrode ( 316 ) disposed on an oxide layer ( 302 ), an upper electrode ( 320 ) disposed on the lower electrode, a...
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7494866 |
Semiconductor device and related method of manufacture
Disclosed are a semiconductor device and a related method of manufacture. The semiconductor device comprises a semiconductor substrate, a conductive structure including contact regions and gate...
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7494896 |
Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer
A method of forming a magnetic memory device on a substrate includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating...
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7491994 |
Ferromagnetic memory cell and methods of making and using the same
In a first aspect, a first apparatus is provided. The first apparatus is a memory cell that includes (1) a semiconductor fin enclosure formed on an insulating layer of a substrate; and (2) a...
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7488628 |
Methods for fabricating ferroelectric memory devices with improved ferroelectric properties
Pursuant to embodiments of the present invention, ferroelectric memory devices are provided which comprise a transistor that is provided on an active region in a semiconductor substrate, and a...
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7488514 |
Methods of forming barium strontium titanate layers
A chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer. A substrate is positioned within a reactor. Barium and strontium are provided within the...
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7488609 |
Method for forming an MgO barrier layer in a tunneling magnetoresistive (TMR) device
A method of forming a barrier layer of a tunneling magnetoresistive (TMR) device by forming first and second MgO barrier layers by different sputtering methods, but in the same sputtering system...
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7485473 |
Methods for forming semiconducting device with titanium nitride orientation layer
A method for manufacturing a semiconductor device, the method including the steps of: (a) forming a titanium layer above a substrate; (b) forming a barrier layer above the titanium layer; (c)...
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7482176 |
Etch mask and method of forming a magnetic random access memory structure
A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask...
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7482175 |
Method of manufacturing substrate having periodically poled regions
A current is observed while applying a gradually increasing voltage between electrodes formed front and rear surfaces of a substrate, and then poled regions are formed by applying a DC voltage,...
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7482648 |
Electronic device and method of manufacturing the same
In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on...
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7479394 |
MgO/NiFe MTJ for high performance MRAM application
An improved tunneling barrier layer is formed for use in a MTJ device. This is accomplished by forming the tunneling barrier layer in two steps. First a layer of magnesium is deposited by DC...
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7476954 |
TMR device with Hf based seed layer
A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may...
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7476329 |
Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
A method for contacting an electrically conductive layer overlying a magnetoelectronics element includes forming a memory element layer overlying a dielectric region. A first electrically...
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7473565 |
Semiconductor device and method of manufacturing the same
A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics...
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7473950 |
Nitrogenated carbon electrode for chalcogenide device and method of making same
A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication...
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7469461 |
Method for making a diaphragm unit of a condenser microphone
A method for making a diaphragm unit of a condenser microphone includes the steps of: forming a liftoff layer on a substrate; forming an insulator diaphragm film on the liftoff layer; and removing...
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7470963 |
Magnetoresistive element and magnetic memory
There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is...
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7470552 |
Method for production of MRAM elements
Magneto-resistive random access memory elements include a ferromagnetic layer having uniaxial anisotropy provided by elongate structures formed in the ferromagnetic film. The magnetic dipole aligns...
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7470551 |
Spin transistor and manufacturing method thereof
A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming...
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7468282 |
Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element
A pin junction element includes a ferromagnetic p-type semiconductor layer and a n-type semiconductor layer which are connected via an insulating layer, and which shows a tunneling magnetic...
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7468905 |
Magnetic field shaping conductor
An integrated circuit arrangement having at least one electrical conductor which, when a current flows through it, produces a magnetic field which acts on at least a further part of the circuit...
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7465589 |
Multi-state magnetoresistance random access cell with improved memory storage density
A multi-state magnetoresistive random access memory device having a pinned ferromagnetic region with a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic...
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7465657 |
Method of manufacturing a semiconductor device having a capacitor
There is provided a semiconductor device that comprises a first impurity diffusion region formed on a silicon substrate (semiconductor substrate), a first interlayer insulating film (first...
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7459318 |
Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same
A three-dimensional (“3-D”) memory capacitor comprises a bottom electrode, a ferroelectric thin film, and a top electrode that conform to a 3-D surface of an insulator layer. The capacitance...
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7459361 |
Semiconductor device with ferroelectric capacitor and fabrication method thereof
A semiconductor device fabrication method includes the steps of forming a conductive plug in an insulating layer on a semiconductor substrate so as to be connected to an element on the substrate;...
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7459739 |
Double density MRAM with planar processing
The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and...
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7456029 |
Planar flux concentrator for MRAM devices
The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of...
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7456030 |
Electroforming technique for the formation of high frequency performance ferromagnetic films
A hybrid method of fabricating magnetic core elements of an on-chip inductor structure addresses issues associated with conventional bottom up and damascene magnetic core plating techniques. The...
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7449345 |
Capping structure for enhancing dR/R of the MTJ device
An MTJ in an MRAM array or in a TMR read head is comprised of a capping layer with a lower inter-diffusion barrier layer, an intermediate oxygen gettering layer, and an upper metal layer that...
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7449346 |
Method of manufacturing ferroelectric thin film for data storage and method of manufacturing ferroelectric recording medium using the same method
A method of manufacturing a ferroelectric thin film with good crystallinity and improved surface roughness includes: forming on a substrate a metal nitride-based precursor layer containing one...
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7445943 |
Magnetic tunnel junction memory and method with etch-stop layer
Methods and apparatus are provided for magnetoresistive memories employing magnetic tunnel junction (MTJ). The apparatus comprises a MTJ ( 61, 231 ), first ( 60, 220 ) and second ( 66, 236 )...
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7445942 |
Process for manufacturing segmented MRAM array with patterned segmented magnetic shields
A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of...
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7439082 |
Conductive memory stack with non-uniform width
A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element that is sandwiched between the electrodes. The bottom...
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7436700 |
MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
An MRAM memory cell is provided having a layer system made of circular-disk-shaped layers. The memory cell includes first and second magnetic layers separated by a nonmagnetic intermediate layer....
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7432114 |
Semiconductor device manufacturing method
To provide a low-cost, efficient semiconductor device manufacturing method for connecting electrodes of a pair of bases (e.g., a pair of a semiconductor chip and a circuit board, or a pair of...
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7432150 |
Method of manufacturing a magnetoelectronic device
A method of manufacturing a magnetoelectronic device includes providing an electrically conducting material and an electrically insulating material adjacent to at least a portion of the...
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7429493 |
Method for fabricating a magnetic head for perpendicular recording using a CMP lift-off and resistant layer
A method using a CMP resistant hardmask in a process of fabricating a pole piece for a magnetic head is described. A set of layers used as the mask for milling the pole piece preferably includes a...
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7427515 |
Electronic element including ferroelectric substance film and method of manufacturing the same
A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of...
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7427559 |
Method of reducing the surface roughness of spin coated polymer films
According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the...
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7427514 |
Passivated magneto-resistive bit structure and passivation method therefor
A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch...
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7425456 |
Antiferromagnetic stabilized storage layers in GMRAM storage devices
A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an...
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7422912 |
Magnetic memory device and methods for making same
In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.
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7423286 |
Laser transfer article and method of making
The present invention is directed to methods for transferring pre-formed electronic devices, such as transistors, resistors, capacitors, diodes, semiconductors, inductors, conductors, and...
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7419579 |
Method for manufacturing a ferroelectric film
A method for manufacturing a ferroelectric film includes the steps of causing, in a solution containing sol-gel raw materials, hydrolysis and polycondensation to the sol-gel raw materials to form a...
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7419838 |
Method for one-way coupling an input signal to an integrated circuit
A method for one-way coupling an input signal to an integrated circuit on a semiconductor chip with the integrated circuit electrically isolated from the input signal comprises forming a MOS...
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7417227 |
Scanning interference electron microscope
The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an...
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7416905 |
Method of fabricating a magnetic shift register
A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. A trench is etched in the...
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