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6780654 |
Methods of forming magnetoresistive memory device assemblies
The invention includes a construction comprising an MRAM device between a pair of conductive lines. Each of the conductive lines can generate a magnetic field encompassing at least a portion of the...
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6777731 |
Magnetoresistive memory cell with polarity-dependent resistance
A magnetoresistive tunnel element includes first and second electrodes and a tunnel barrier disposed between the two electrodes, the tunnel barrier having at least two barrier layers made of...
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6777353 |
Process for producing oxide thin films
This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source...
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6777730 |
Antiparallel magnetoresistive memory cells
A ferromagnetic thin-film based digital memory having a plurality of bit structures electrically interconnected with information storage and retrieval circuitry that avoids information loss in one...
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RE38565 |
Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures
A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode...
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6777287 |
Ferroelectric semiconductor memory device and a fabrication process thereof
A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO 3 , wherein the PZT film includes pinholes,...
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6777248 |
Dielectric element and manufacturing method therefor
A ferroelectric element having a high Pr and a low Ec and having a good withstand voltage, which is in the form of a thin film using a ferroelectric layer containing insulating particles, is...
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6773929 |
Ferroelectric memory device and method for manufacturing the same
The present invention provides a ferroelectric memory device and a manufacturing method forming the same capable of preventing characteristic deterioration of a ferroelectric layer due to an...
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6773930 |
Method of forming an FeRAM capacitor having a bottom electrode diffusion barrier
The present invention is directed to a method of forming an FeRAM integrated circuit, which includes forming a TiAlON bottom electrode diffusion barrier layer prior to formation of the bottom...
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6774009 |
Silicon target assembly
A target-backing plate assembly for use in physical vapor deposition (PVD) processes. The lower curved surface of the target of the assembly is received in a conformingly-shaped backing plate,...
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6774004 |
Nano-scale resistance cross-point memory array
A method of fabricating a nano-scale resistance cross-point memory array includes preparing a silicon substrate; depositing silicon oxide on the substrate to a predetermined thickness; forming a...
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6770491 |
Magnetoresistive memory and method of manufacturing the same
A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with...
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6770923 |
High K dielectric film
A dielectric layer comprises lanthanum, aluminum, nitrogen, and oxygen and is formed between two conductors or a conductor and substrate. In one embodiment, the dielectric layer is graded with...
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6770492 |
Ferroelectric memory device
This invention provides a technique for preventing film quality of a capacitive insulating film made of a ferroelectric film of a FeRAM memory cell from being degraded and for improving the...
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6768150 |
Magnetic memory
A magnetic memory cell is disclosed. The memory cell includes first conductor and second conductors coupled to first and second electrodes of a magnetic element. A plurality of memory cells is...
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6767749 |
Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
Thin layers of high quality single-crystal piezoelectric material, high temperature sintered piezoelectric material, or high quality thin film grown material are transferred to an appropriate...
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6767750 |
Detection of AIOx ears for process control in FeRAM processing
The present invention is directed to a method of forming an FeRAM integrated circuit, which includes evaluating the capacitor stack to determine the efficacy of the sidewall diffusion barrier layer...
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6764863 |
Memory-storage node and the method of fabricating the same
The memory-storage node of the present invention includes a semiconductor substrate, a first insulating layer over the substrate, a conductive layer formed within the first insulating layer, and a...
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6764864 |
BST on low-loss substrates for frequency agile applications
An exemplary system and method for providing a microwave regime, frequency-agile device is disclosed as comprising inter alia: a low-loss, insulating substrate ( 200 ); a layer of SiO 2 ( 210 )...
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6764862 |
Method of forming ferroelectric random access memory device
The present invention discloses a method of forming a ferroelectric random access memory (FRAM) of a capacitor over bit-line (COB) structure. In the method, a capacitor contact plug is formed at a...
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6762065 |
Semiconductor device having ferroelectric capacitor and method for manufacturing the same
A lower electrode is formed on an insulating film on a semiconductor substrate. A pair of ferroelectric films are formed on the lower electrode separately from each other. An upper electrode is...
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6762064 |
Process for fabrication of a ferrocapacitor
A process for the fabrication of a ferrocapacitor comprising depositing a first mask element 7 over a structure having a bottom electrode 1 , a ferroelectric layer 3 and a top electrode 5 ....
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6762063 |
Method of fabricating non-volatile ferroelectric transistors
A method of fabricating a non-volatile ferroelectric memory transistor includes forming a bottom electrode; depositing a ferroelectric layer over an active region beyond the margins of the bottom...
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6759250 |
Deposition method for lead germanate ferroelectric structure with multi-layered electrode
The ferroelectric structure including a Pt/Ir layered electrode used in conjunction with a lead germanate (Pb 5 Ge 3 O 11 ) thin film is provided. The electrode exhibits good adhesion to the...
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6759249 |
Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory
A method of fabricating a variable resistance device, wherein the resistance is changed by passing a voltage of various pulse length through the device, includes preparing a silicon substrate;...
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6759252 |
Method and device using titanium doped aluminum oxide for passivation of ferroelectric materials
A passivation layer comprises a titanium-doped aluminum oxide layer for passivation of ferroelectric materials such as Pt/SBt/Ir—Ta—O devices. The titanium-doped aluminum oxide layer for...
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6759248 |
Semiconductor wafer identification
A semiconductor wafer ( 10 ), a method of providing information on a semiconductor wafer ( 10 ), a system of semiconductor wafer ( 10 ) and reading means, and a method of reading information from a...
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6759251 |
Semiconductor device having ferroelectic memory cells and method of manufacturing the same
A semiconductor device having ferroelectric memory cells has memory cell transistors each including first and second source/drain regions. Plug electrodes are formed in contact with the first and...
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6756238 |
Domain controlled piezoelectric single crystal and fabrication method therefor
A domain controlled piezoelectnc single crystal is disclosed which uses a lateral vibration mode for an electromechanical coupling factor k 31 not less than 70% and a piezoelectric constant −d...
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6756235 |
Metal oxide film formation method and apparatus
In a metal oxide film formation method, a source gas mixture of organic compound gases containing at least three metals, and an oxidation gas are individually prepared. While the substrate is...
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6756648 |
System and method for stabilizing a magnetic tunnel junction sensor
A magnetic tunnel junction (MTJ) sensor system and a method for fabricating the same are provided. First provided are a first lead layer, and a pinned layer. Positioned adjacent to pinned layer is...
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6756237 |
Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices
Magnetic tunneling junction devices (MTJ) useful for sensing and memory applications and characterized by reduced resistance, magnetic noise, increased sensitivity, and increased magnetoresistance...
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6756239 |
Method for constructing a magneto-resistive element
A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a...
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6756236 |
Method of producing a ferroelectric memory and a memory device
The present invention refers to a method of producing a ferroelectric memory which method comprises: a) providing ferroelectric particles, b) providing a substrate, c) orientating at least a...
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6753193 |
Method of fabricating ferroelectric memory device
A ferroelectric memory device having a multi-layer electrode structure and a fabricating method thereof are described. The ferroelectric memory device includes a semiconductor substrate having...
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6753192 |
Preparation of ultrathin magnetic layer on semiconductors
According to the method for preparation of ultrathin magnetic layer on semiconductor of this invention, a non-ferromagnetic metal buffer layer thinner than 40 ML is formed on the semiconductor...
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6750067 |
Microelectronic piezoelectric structure and method of forming the same
A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O 3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate...
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6750093 |
Semiconductor integrated circuit and method for manufacturing the same
A semiconductor integrated circuit has a ferroelectric capacitor. The ferroelectric capacitor includes a first insulation film formed above a semiconductor substrate, a first electrode which is...
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6750068 |
Method of fabricating a magnetic element with an improved magnetoresistance ratio with an antiparallel top and bottom pinned ferromagnetic layer
An improved and novel magnetic element and fabrication method. The magnetic element ( 10;30 ) including a bottom pinned ferromagnetic layer ( 12;32 ) and a top pinned ferromagnetic layer ( 20;40 )...
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6750066 |
Precision high-K intergate dielectric layer
A semiconductor device which includes a precision high-K dielectric and formed on a semiconductor substrate and a method of forming the same. The semiconductor device includes at least one...
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6746876 |
Capacitor manufacturing method having dielectric formed before electrode
A method for manufacturing a capacitor is provided which can form a lower electrode having a high aspect ratio without suffering deterioration of the capacitor electric characteristics even when a...
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6747302 |
FeRAM having BLT ferroelectric layer and method for forming the same
A ferroelectric memory device and a method for manufacturing the same is disclosed. Because a (Bi x La y )Ti 3 O 12 (BLT) layer, which can be crystallized in relatively low temperature, is used in...
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6746875 |
Magnetic memory and method of its manufacture
A magnetic memory of a present invention is formed as below. The magnetic memory has a TMR film formed on a first conductive film, and a second conductive film with a flat top surface, having the...
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6746912 |
MIM capacitor and manufacturing method therefor
A downsized, high-capacity MIM capacitor provided on a compound semiconductor includes a lower electrode comprising a plurality of metal layers including a top layer, an upper electrode, and a...
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6746877 |
Encapsulation of ferroelectric capacitors
A ferroelectric capacitor encapsulation method for preventing hydrogen damage to electrodes and ferroelectric material of the capacitor. In general terms, the method for encapsulating a capacitor...
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6746910 |
Method of fabricating self-aligned cross-point memory array
A method of fabricating a self-aligned cross-point memory array includes preparing a substrate, including forming any supporting electronic structures; forming a p-well area on the substrate;...
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6743642 |
Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology
A method for manufacturing a magnetoresistive random access memory (MRAM) cell is disclosed, which alleviates the problem of Neel coupling caused by roughness in the interface between the tunnel...
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6743641 |
Method of improving surface planarity prior to MRAM bit material deposition
The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and...
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6740532 |
Method of manufacturing a ferroelectric thin film
The invention provides a method for forming a ferroelectric thin film that is uniform and good in crystallinity. The method includes applying a liquid to a surface of a substrate. The liquid...
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6740531 |
Method of fabricating integrated circuit devices having dielectric regions protected with multi-layer insulation structures
A dielectric region, such as a ferroelectric dielectric region of an integrated circuit capacitor, is protected by a multi-layer insulation structure including a first relatively thin insulation...
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