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6887719 |
Magnetoresistive random access memory (MRAM) cell patterning
A process that advantageously forms MRAM cells without the application of ion beam milling processes. Unlike conventional processes that rely on ion beam milling processes to remove materials from...
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6887716 |
Process for producing high quality PZT films for ferroelectric memory integrated circuits
A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble...
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6888184 |
Shielded magnetic ram cells
A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically...
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6887717 |
Magnetoresistive device and method for producing the same, and magnetic component
A magnetoresistive device including a high-resistivity layer ( 13 ), a first magnetic layer ( 12 ) and a second magnetic layer ( 14 ), the first magnetic layer ( 12 ) and the second magnetic layer...
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6884649 |
Method for manufacturing piezoelectric film, piezoelectric element and ink jet recording head
The invention provides a method for manufacturing a piezoelectric element including a coating step of coating a substrate with a coating liquid for forming the piezoelectric element thereby forming...
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6884633 |
Semiconductor memory device using magneto resistive element and method of manufacturing the same
A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive...
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6884630 |
Two-step magnetic tunnel junction stack deposition
Magnetic tunnel junction devices can be fabricated using a two-step deposition process wherein respective portions of the magnetic tunnel junction stack are defined independently of one another.
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6884632 |
Ion beam definition of magnetoresistive field sensors
A magnetoresistive (MR) sensor can be shaped using ion beam irradiation and/or implantation through a mask introduced between a MR structure and an ion source. The mask covers selected portions of...
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6884731 |
Method for forming magnetic tunneling junction layer for magnetic random access memory
A method of forming a magnetic tunneling junction (MTJ) layer for an MRAM includes sequentially forming a lower material layer, an insulation layer, and an upper material layer on a substrate,...
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6884631 |
Method of forming a ferroelectric film by direct annealing of the ferroelectric film using laser or lamp followed by a second annealing through a light transmission and/or absorption film
In a method of forming a ferroelectric film according to the present invention, pulsed laser light or pulsed lamp light is applied to an amorphous oxide film formed over a substrate to form...
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6878980 |
Ferroelectric or electret memory circuit
A ferroelectric or electret memory circuit, particularly a ferroelectric or electret memory circuit with improved fatigue resistance, including a ferroelectric or electret memory cell with a...
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6876536 |
Thin film capacitor and method for fabricating the same
A thin film capacitor including a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first and second electrode structural bodies...
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6872579 |
Thin-film coil and method of forming same
A method of forming a patterned thin film comprises the steps of forming a first plating layer and a second plating layer. Each of the steps of forming the plating layers includes: the step of...
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6872669 |
PZT (111) texture through Ir texture improvement
The present invention is directed to a method of forming a ferroelectric capacitor having a (111) PZT texture. The method includes forming a smooth bottom electrode diffusion barrier layer that...
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6873535 |
Multiple width and/or thickness write line in MRAM
A magnetic random access memory (MRAM) cell including an MRAM cell stack located over a substrate and first and second write lines spanning opposing termini of the MRAM cell stack. At least one of...
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6869806 |
Method and apparatus for the production of a semiconductor compatible ferromagnetic film
Films of gallium manganese nitride are grown on a substrate by molecular beam epitaxy using solid source gallium and manganese and a nitrogen plasma. Hydrogen added to the plasma provides improved...
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6867468 |
Magnetic shielding for reducing magnetic interference
A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with...
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6867053 |
Fabrication of a FeRAM capacitor using a noble metal hardmask
A ferroelectric capacitor is fabricated using a noble metal hardmask. A hardmask is deposited on a top electrode of a capacitor stack comprising a ferroelectric layer sandwiched between the top...
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6858442 |
Ferroelectric memory integrated circuit with improved reliability
A memory cell having capacitor with top and bottom electrodes with a dielectric layer between is described. The bottom electrode is coupled to a first diffusion region of a transistor by a bottom...
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6858441 |
MRAM MTJ stack to conductive line alignment method
A method of manufacturing a resistive semiconductor memory device ( 100 ), comprising depositing an insulating layer ( 132 ) over a workpiece ( 30 ), and defining a pattern for a plurality of...
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6858905 |
Methods of manufacturing low cross-talk electrically programmable resistance cross point memory structures
Low cross talk resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises a bit formed using a perovskite material interposed at a...
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6858444 |
Method for making a ferroelectric memory transistor
Integrated memory circuits, key components in thousands of electronic and computer products, have recently been made using ferroelectric memory transistors, which offer faster write cycles and...
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6858862 |
Discrete polymer memory array and method of making same
The invention relates to discrete, spaced-apart ferroelectric polymer memory device embodiments. The ferroelectric polymer memory device is fabricated by spin-on polymer processing and etching...
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6855564 |
Magnetic random access memory having transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell
A magnetic random access memory (MRAM) having a vertical structure transistor has the characteristics of faster access time than SRAM, high density as with DRAM, and non-volatility like a flash...
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6855563 |
Method of manufacturing a tunnel magneto-resistance based magnetic memory device
In a method of manufacturing a magnetic memory device comprising a writing word line (first wiring) and a bit line (second wiring) three-dimensionally orthogonally intersecting therewith, with a...
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6855565 |
Semiconductor device having ferroelectric film and manufacturing method thereof
First and second semiconductor regions are formed separately from each other in a semiconductor substrate. A gate electrode is formed above the semiconductor substrate which lies between the first...
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6852551 |
Method of forming a ferroelectric film and fabrication process of a semiconductor device having a ferroelectric film
A method of forming a ferroelectric film includes the steps of forming a layer by a material that takes a metal state in a reducing ambient and an oxide state in an oxidizing ambient, and...
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6852550 |
MRAM sense layer area control
This invention relates to MRAM technology and new MRAM memory element designs. Specifically, this invention relates to the use of ferromagnetic layers of different sizes in an MRAM element. This...
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6852549 |
Ferroelectric thin film processing for ferroelectric field-effect transistor
The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a...
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6849166 |
Ferroelectric thin film element and its manufacturing method, thin film capacitor and piezoelectric actuator using same
In a manufacturing method for a piezoelectric actuator a first electrode layer is formed on substrate, a ferroelectric thin film is formed on the first electrode layer, and an inorganic protective...
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6849517 |
Methods of forming capacitors including reducing exposed electrodes in semiconductor devices
A method of fabricating an integrated circuit device having capacitors is provided. The capacitors can include a first electrode, a dielectric layer and a second electrode. An interlayer insulating...
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6849467 |
MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer
A method of forming an H 2 passivation layer in an FeRAM includes preparing a silicon substrate; depositing a layer of TiO x thin film, where 0<x<2, on a damascene structure; plasma space...
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6849468 |
Method for manufacturing ferroelectric random access memory capacitor
The method for manufacturing an FeRAM capacitor having an enhanced adhesive property between a dielectric layer and a bottom electrode and a grain uniformity of the dielectric layer, is employed by...
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6849464 |
Method of fabricating a multilayer dielectric tunnel barrier structure
A multilayer dielectric tunnel barrier structure and a method for its formation which may be used in non-volatile magnetic memory elements comprises an ALD deposited first nitride junction layer...
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6849466 |
Method for manufacturing MTJ cell of magnetic random access memory
A method for fabricating a MTJ cell of a magnetic random access memory (MRAM) using a semiconductor film as a tunnel barrier layer is disclosed. The method comprises the steps of: forming a pinned...
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6849465 |
Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition
A method of patterning a bottom electrode for a magnetic memory cell. The bottom electrode is patterned prior to the deposition of the soft layer of the magnetic tunnel junction (MTJ) material...
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6847073 |
Semiconductor device using ferroelectric film in cell capacitor, and method for fabricating the same
A semiconductor device includes a MOS transistor, an interlayer insulating film, a contact plug, a capacitor lower electrode, a ferroelectric film and two capacitor upper electrodes. The MOS...
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6847072 |
Low switching field magnetic element
A magnetic element which can switch states using a relatively lower magnetic field. The magnetic element comprises first and second magnetic layers separated by an intermediate layer. The...
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6846683 |
Method of forming surface-smoothing layer for semiconductor devices with magnetic material layers
A semiconductor device ( 118 ) and method of fabrication thereof, wherein a plurality of conductive lines ( 124 ) are formed over a workpiece, a surface-smoothing conductive material ( 140 ) is...
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6844203 |
Gate oxides, and methods of forming
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Also shown is a gate...
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6841395 |
Method of forming a barrier layer of a tunneling magnetoresistive sensor
A fabrication process for a tunneling magnetoresistance (TMR) sensor is disclosed. In particular, a unique method of forming a barrier layer of the TMR sensor is utilized so that the TMR sensor...
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6842361 |
Memory cell, memory circuit block, data writing method and data reading method
An object of the present invention is to provide a memory cell, a memory circuit block, a data writing method, and a data reading method which realize a reduction in the number of metal layers,...
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6841820 |
Information storage apparatus and manufacturing method therefor
The invention achieves the fine processing of an information writing device, which includes a multilayered element obtained by stacking ferromagnetic/semiconductor/ferromagnetic layers, without...
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6841396 |
VIA0 etch process for FRAM integration
A ferroelectric memory device comprises a logic programmable capacitance reference circuit. The circuit is adapted to generate a reference voltage during a sense mode of operation, wherein the...
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6841818 |
Non-volatile memory device utilizing dueterated materials
In a non-volatile memory device that includes an electrically polarizable dielectric memory material with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence,...
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6841397 |
Method for forming pore structure for programmable device
In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, the quantity of programmable material is minimized, and the programmable material...
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6841817 |
Ferroelectric capacitor and a semiconductor device
A ferroelectric capacitor includes a lower electrode, a ferroelectric film provided over the lower electrode and having a perovskite-type structure and an upper electrode provided over the...
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6835576 |
Magnetic thin film, a magnetic component that uses this magnetic thin film, manufacturing methods for the same, and a power conversion device
On top of a silicon substrate, a polyimide film with a thickness of 10 μm is formed. On top of this, a magnetic thin film that is a polyimide film containing Fe fine particles and that has a...
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6833277 |
Method and system for field assisted statistical assembly of wafers
A wafer having heterostructure therein is formed using a substrate with recesses formed within a dielectric layer. A magnetized magnetic layer or a polarized electret material is formed at the...
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6831314 |
Magnetoresistive effect element and magnetic memory device
A magnetoresistive effect element ( 1 ) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer ( 5 ) and magnetization free layer ( 7 )) is opposed to each...
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