Matches 551 - 600 out of 1489 < 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 >
Match Document Document Title
6927121 Method for manufacturing ferroelectric random access memory capacitor  
A method for manufacturing an FeRAM capacitor is employed to enhance an adhesive property between a dielectric layer and a first bottom electrode of iridium. The method including the steps of:...
6927166 Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed  
A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is...
6927073 Methods of fabricating magnetoresistive memory devices  
In accordance with one or more embodiments of the present invention, a technique fabricating a magnetoresistive memory device, where the magnetoresistive memory device has a magnetic memory element...
6927437 Ferroelectric memory device  
The present invention provides a ferroelectric memory device and a manufacturing method forming the same capable of preventing characteristic deterioration of a ferroelectric layer due to an...
6924155 Ferroelectric memory, method of fabricating the same, semiconductor device, and method of fabricating the same  
A method of manufacturing a ferroelectric memory of the present invention includes applying pulsed laser light 70 to a ferroelectric capacitor 105 from above the ferroelectric capacitor in a...
6924156 Method for forming a ferroelectric capacitor device  
A ferroelectric capacitor device, such as an FeRAM device is formed by forming a substrate extending in a first plane and comprising a number of layers of material, forming a hard mask layer on the...
6921954 Asymmetric patterned magnetic memory  
This invention provides an asymmetrically patterned magnetic memory storage device. In a particular embodiment at least one magnetic memory cell is provided. Each magnetic memory cell provides at...
6921671 Buffer layers to enhance the C-axis growth of Bi4Ti3O12 thin film on high temperature iridium-composite electrode  
A method of fabricating a ferroelectric thin film on an iridium-composite electrode in an integrated circuit device includes preparing a substrate; depositing an iridium-composite bottom electrode...
6921953 Self-aligned, low-resistance, efficient MRAM read/write conductors  
The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor...
6919212 Method for fabricating ferroelectric random access memory device with merged-top electrode-plateline capacitor  
The present invention relates to a method for fabricating a ferroelectric random access memory (FeRAM) device. The method includes the steps of: forming a first inter-layer insulation layer on a...
6919595 Semiconductor memory device  
A magnetic memory device capable of achieving high reliability and superior operation characteristics of tunneling magneto-resistive (TMR) elements is provided. This magnetic memory device includes...
6919593 Semiconductor memory device and method of fabricating the same  
A ferroelectric capacitor having a ferroelectric film is formed on a conductive silicon substrate. The dielectric capacitor is covered with a first diffusion barrier film, and a second interlayer...
6919213 Methods for operating a unipolar spin transistor and applications of same  
A unipolar spin transistor includes a semiconductor material having a first region, a second region, and a third region. The first region is adjacent to the second region so as to form a first...
6919594 Magneto resistive storage device having a magnetic field sink layer  
An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the...
6916668 Methods for providing a magnetic shield for an integrated circuit having magnetoresistive memory cells  
A shielding arrangement for protecting a circuit containing magnetically sensitive materials from external stray magnetic fields. A shield of a material having a relatively high permeability is...
6916669 Self-aligned magnetic clad write line and its method of formation  
A self-aligned magnetic clad bit line structure ( 274 ) for a magnetic memory element ( 240 a ) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure...
6913937 Memory cell array having ferroelectric capacity, method of manufacturing the same and ferroelectric memory device  
The present invention relates to: a memory cell array which is capable of decreasing the parasitic capacitance of load capacitance of signal electrodes and has ferroelectric layers making up...
6911685 Thermally-assisted magnetic memory structures  
An exemplary thermally-assisted magnetic memory structure comprises a first conductor substantially surrounded by a cladding, a memory cell being thermally isolated from the first conductor by a...
6911156 Methods for fabricating MRAM device structures  
A method for fabricating a magnetic memory element structure comprises providing a dielectric layer having a conducting via. A first magnetic layer is formed overlying the dielectric layer and is...
6911402 Deposition method of a dielectric layer  
A method for depositing a dielectric layer having a multi-layer structure on a substrate includes forming an oxidation barrier layer on a surface of a substrate; forming a plurality of dielectric...
6911346 Method of etching a magnetic material  
A method of etching a magnetic material (e.g., nickel-iron alloy (NiFe), cobalt-iron alloy (CoFe), and the like) using a gas mixture comprising a hydrogen halide gas and a fluorocarbon-containing...
6908867 Method of manufacturing a FeRAM with annealing process  
There are contained the steps of forming sequentially a first conductive film, a dielectric film, and a second conductive film on a first insulating film, forming an upper electrode of a capacitor...
6908827 Perovskite-type material forming methods, capacitor dielectric forming methods, and capacitor constructions  
A method includes forming a material over a substrate, oxidizing the material, and separately from the oxidizing, converting at least a portion of the oxidized material to a perovskite-type...
6908772 Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric  
A single transistor (“1T”) ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric. The memory cell of the...
6904669 Magnetic sensor and method of producing the same  
On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 ...
6905889 Inductor device with patterned ground shield and ribbing  
Inducting devices having a patterned ground shield with ribbing in an integrated circuit. In one embodiment, an inducting device comprises conductive turns to conduct current, a shield layer and a...
6905887 High sensitivity, directional dc-SQUID magnetometer  
A solid state dc-SQUID includes a superconducting loop containing a plurality of Josephson junctions, wherein an intrinsic phase shift is accumulated through the loop. In an embodiment of the...
6905888 Magnetic memory element having controlled nucleation site in data layer  
A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. In some embodiments, the nucleation site may be a divot in the data layer or a protrusion from...
6903400 Magnetoresistive memory apparatus  
A magnetoresistive memory apparatus with a semiconductor substrate having a plurality of intersecting, non-contacting word lines and bit lines constituting a matrix, and a plurality of...
6903396 Control of MTJ tunnel area  
A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two...
6903397 Method for manufacturing non-volatile memory device and non-volatile memory device and semiconductor device  
A semiconductor device embodiment may include a plurality of cells each including a transistor therein, the cells also each including a first capacitor electrode therein, the first capacitor...
6902940 Method for manufacture of MRAM memory elements  
A magnetic memory element has reduced demagnetization coupling between a pinned layer and a free layer. The element includes a pinned ferromagnetic layer and a free ferromagnetic layer which are...
6900062 Method of manufacturing a semiconductor device utilizing active oxygen  
There are provided the steps of forming a first conductive layer, an oxide dielectric layer, and a second conductive layer sequentially over a first insulating layer formed over a semiconductor...
6900486 Ferroelectric memory and method for manufacturing same  
Ferroelectric memory includes a hollow formed in a first insulation film. A lower electrode is formed in this hollow by sol-gel method including an application process due to a spin coat method. In...
6897074 Method for making single-phase c-axis doped PGO ferroelectric thin films  
A method for forming a doped PGO ferroelectric thin film, and related doped PGO thin film structures are described. The method comprising: forming either an electrically conductive or electrically...
6897508 Integrated capacitor with enhanced capacitance density and method of fabricating same  
A thin film integrated multilayer capacitor with substantially enhanced capacitance density suitable for Dynamic Random Access Memory (DRAM) and other integrated capacitor applications is formed...
6897503 Semiconductor memory device and manufacturing process for the same  
In a semiconductor memory device having a capacitor layer comprising a dielectric film or a ferroelectric film, as an interlayer insulation film formed between the capacitor and a wiring layer...
6897502 Semiconductor memory device and its manufacturing method  
A first impurity diffusion area is formed in the semiconductor substrate at a bottom of the first trench formed in a surface of the semiconductor substrate. A second impurity diffusion area is...
6893913 Method for forming capacitor of semiconductor device  
Disclosed is a method for forming a capacitor of a semiconductor device. The forming method comprises the step of forming an interlayer insulating film on a semiconductor substrate formed with a...
6893912 Ferroelectric capacitor memory device fabrication method  
A ferroelectic capacitor memory device is fabricated by a forming a substrate including integrated circuitry with an interconnect layer and pass transistors. First capacitor electrodes, contacts...
6893893 Method of preventing short circuits in magnetic film stacks  
A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A...
6894335 Thin film capacitor having multi-layer dielectric film including silicon dioxide and tantalum pentoxide  
A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric...
6893927 Method for making a semiconductor device with a metal gate electrode  
A method for making a semiconductor device is described. In that method, a metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal...
6890768 Method of making layered superlattice material with ultra-thin top layer  
In the manufacture of an integrated circuit memory cell, a strontium bismuth tantalate or strontium bismuth tantalum niobate thin film layer ( 50 ) is deposited on a substrate ( 28, 49 ) and a...
6890814 Methods for use in forming a capacitor and structures resulting from same  
A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material...
6890770 Magnetoresistive random access memory device structures and methods for fabricating the same  
A method for fabricating an MRAM device structure includes providing a substrate on which is formed a first transistor and a second transistor. An operative memory element device is formed in...
6890813 Polymer film metalization  
Embodiments in accordance with the present invention eliminate the need for a subtractive metal patterning process to pattern the electrode above a ferroelectric polymer. Instead, a selective...
6890767 Method to reduce switch threshold of soft magnetic films  
In magnetic memories it is important to be able to switch the states of the memory elements using minimal power i.e. external fields of minimal intensity. This has been achieved by giving each...
6890769 Ferroelectric capacitor having upper electrode lamination and manufacture thereof  
A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises a base substrate with an insulating surface, such as a semiconductor substrate formed with semiconductor elements...
6887720 Ferroelectric memory device and method of forming the same  
The present invention discloses a ferroelectric memory device and a method of forming the same. The ferroelectric memory device includes a semiconductor substrate, a capacitor lower electrode, a...
Matches 551 - 600 out of 1489 < 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 >