Matches 401 - 420 out of 420 < 1 2 3 4 5 6 7 8 9
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4177096 Method for manufacturing a semiconductor integrated circuit device  
In manufacturing an insulated gate field effect transistor integrated circuit using both a self-alignment diffusion process and a non-self-alignment diffusion process, a mask is formed having a...
4138781 Method for manufacturing semiconductor device  
In a method for the manufacture of a semiconductor device, comprising selectively forming at least one function region of a semiconductor element by a photoengraving technique using a masking layer...
4125427 Method of processing a semiconductor  
An improvement of the prior art method of processing large scale integrated (LSI) semiconductors is disclosed, wherein an etching procedure, which was previously performed as the final processing...
4095251 Field effect transistors and fabrication of integrated circuits containing the transistors  
A field effect transistor (FET) wherein the field insulator is nonrecessed with respect to the source and drain regions, wherein the sides of the polysilicon gate electrode are self-aligned with...
4072545 Raised source and drain igfet device fabrication  
Disclosed is an integrated circuit field effect transistor having a source and drain which protrude above the silicon substrate so as to create shallow junctions with the substrate while...
4069577 Method of making a semiconductor device  
A silicon-gate insulated gate field effect transistor device has a thick field oxide in contiguous surrounding relation to its gate electrode and with a surface coplanar with or slightly higher...
4058887 Method for forming a transistor comprising layers of silicon dioxide and silicon nitride  
A method of manufacturing an insulated gate field effect transistor comprising providing a semiconductor body portion of one type conductivity, providing on a surface of said body portion an...
4054989 High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same  
An improved FET structure and method of making same is disclosed. The gate structure of the FET includes a phospho-silicate glass as the insulator and polysilicon as the gate conductor. A thin...
4039358 Method of manufacturing an insulated gate type field effect semiconductor device  
A method of manufacturing an insulated gate type field effect semiconductor device, wherein before an oxide film for the gate is formed, the surface portion of the silicon substrate is removed...
4035198 Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistors  
A method of fabricating a field effect transistor (FET) wherein a self-registered or misregistration tolerant electrical connection is provided between the gate electrode and a metallic...
4030952 Method of MOS circuit fabrication  
An improved method of MOS circuit fabrication includes the consecutive steps of formation of a selected material on the surface of an underlying substrate, removal of the selected material from...
4023195 MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions  
An MOS field effect transistor includes a substrate in which source and drain regions are formed. A thick silicon dioxide layer is selectively formed on the upper surface of the substrate, so that...
4016007 Method for fabricating a silicon device utilizing ion-implantation and selective oxidation  
A polycrystalline silicon layer is deposited by chemical vapor deposition method at a predetermined location on an oxide film grown by thermal oxidation on a surface of a monocrystal silicon...
3936859 Semiconductor device including a conductor surrounded by an insulator  
A silicon-gate insulated gate field effect transistor device has a thick field oxide in contiguous surrounding relation to its gate electrode and with a surface coplanar with or slightly higher...
3913211 Method of MOS transistor manufacture  
An MOS transistor is constructed such that the insulation covering the field of the device and in direct contact with the top surface of the semiconductor material in which the source and drain...
3899373 Method for forming a field effect device  
A method for fabricating an insulated gate field effect transistor device which results in a doped polysilicon gate electrode which gate structure can be used for additional interconnection...
3860454 FIELD EFFECT TRANSISTOR STRUCTURE FOR MINIMIZING PARASITIC INVERSION AND PROCESS FOR FABRICATING  
A process for fabricating a field effect transistor having minimal parasitic inversion wherein a field layer of insulating material is formed on a monocrystalline substrate having spaced source and...
3849216 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED BY USING THE METHOD  
A method of manufacturing a semiconductor device, preferably an insulated gate field effect transistor, comprising a surface zone having conductivity properties other than the adjoining...
3676921 SEMICONDUCTOR DEVICE COMPRISING AN INSULATED GATE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME  
Method of making an insulated gate field effect transistor is described in which the surface of a silicon semiconductor is covered in whole or in part with a layer of a masking material which masks...
3698966 Title is not available  
Matches 401 - 420 out of 420 < 1 2 3 4 5 6 7 8 9