Matches 51 - 100 out of 421 < 1 2 3 4 5 6 7 8 9 >
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6797587 Active region corner implantation method for fabricating a semiconductor integrated circuit microelectronic fabrication  
Within a method for forming an isolation region within a semiconductor substrate, there is, prior to forming the isolation region within an isolation trench formed adjoining an active region of a...
6764922 Method of formation of an oxynitride shallow trench isolation  
An oxynitride material is used to form shallow trench isolation regions in an integrated circuit structure. The oxynitride may be used for both the trench liner and trench fill material. The...
6762103 Method of forming an isolation film in a semiconductor device  
Disclosed is a method of forming an isolation film in semiconductor devices using a shallow trench. Trenches are formed in silicon substrates of a memory cell region and a peripheral circuit...
6762104 Method for fabricating semiconductor device with improved refresh characteristics  
Disclosed is a method for fabricating a semiconductor device wherein boron-halo ion implantation is performed only to a bit-line contact part while masking a storage node contact part. The method...
6750107 Method and apparatus for isolating a SRAM cell  
A static random access memory cell comprising a first inverter including a first p-channel pullup transistor, and a first n-channel pulldown transistor in series with the first p-channel pullup...
6750066 Precision high-K intergate dielectric layer  
A semiconductor device which includes a precision high-K dielectric and formed on a semiconductor substrate and a method of forming the same. The semiconductor device includes at least one...
6746908 Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device  
A temperature control method is provided which is capable of performing quick, accurate, and error-free soaking control over all wafer areas to be thermally treated at a target temperature without...
6734524 Electronic component and method of manufacturing same  
An electronic component includes a semiconductor substrate ( 110 ), an epitaxial semiconductor layer ( 120, 221, 222 ) over the semiconductor substrate, and a semiconductor region ( 130, 230 ) in...
6709936 Narrow high performance MOSFET device design  
The present invention provides a narrow/short high performance MOS device structure that includes a rectangular-shaped semiconductor substrate region having a first conductivity type. A region of...
6693341 Semiconductor device  
When an element isolation film is formed by the LOCOS technique, as an underlying buffer layer of an oxidation resisting film, a pad oxidation film and pad poly-Si film are used. When an element is...
6682976 Method for manufacturing a nonvolatile semiconductor memory device  
A method for manufacturing a semiconductor memory device includes forming an isolation layer adjacent a diffusion region over a substrate that also has a stacked gate region. A gate oxide layer is...
6670260 Transistor with local insulator structure  
A thin filmed fully-depleted silicon-on-insulator (SOI) metal oxide semiconductor field defect transistor (MOSFET) utilizes a local insulation structure. The local insulative structure includes a...
6660620 Method of forming noble metal pattern  
A process for high resolution patterning of noble metals, such as platinum, for forming various semiconductor devices, such as capacitors or wiring patterns, is disclosed. A layer of noble metal,...
6656806 SOI structure and method of producing same  
A Silicon On Insulator (SOI) structure and method of producing an SOI structure that can prevent a short circuit between a Local Inter-Connect (LIC) and a well in the SOI structure is disclosed....
6656795 Method of manufacturing semiconductor memory element  
A method of manufacturing a semiconductor memory element is disclosed. The method includes arranging a mask on the upper surface of a semiconductor substrate, using the mask to conduct exposure,...
6613632 Fabrication method for a silicon nitride read-only memory  
A fabrication method for a read-only memory with a silicon nitride floating gate is provided. A first oxide layer and a silicon nitride layer are sequentially formed on a substrate. The silicon...
6596584 Method for fabricating a self-aligned source line flash memory device  
A method for fabricating a flash memory device having a self-aligned source includes providing a semiconductor substrate having a source region separated from a drain region by a channel region....
6579769 Semiconductor device manufacturing method including forming FOX with dual oxidation  
In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming a first window in the...
6579767 Method for forming aluminum oxide as a gate dielectric  
A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. A thin SiO 2 layer is thermally grown on top of the...
6579777 Method of forming local oxidation with sloped silicon recess  
A method of forming a localized oxidation having reduced bird's beak encroachment in a semiconductor device by providing an opening in the silicon substrate that has sloped sidewalls with a taper...
6576957 Etch-stopped SOI back-gate contact  
The buried oxide region has a layer added which etches selectively with respect to oxide, allowing the contacts to a gate or to a back gate to be created without overetching into the buried oxide...
6566207 Semiconductor device fabricating method  
A method of fabricating a semiconductor device in which a LOCOS profile characteristic is applied to a normal shallow trench isolation (STI) structure thereby lowering compressive stress that is...
6562723 Hybrid stack method for patterning source/drain areas  
A method of manufacturing an integrated circuit which reduces damage to the underlying base layer and the created oxide structures is disclosed herein. The method includes providing a hybrid stack...
6534401 Method for selectively oxidizing a silicon/metal composite film stack  
A method of selectively oxidizing a composite film. According to the present invention a substrate of having a composite film comprising of lower silicon film, a barrier layer, and upper metal film...
6534352 Method for fabricating a MOSFET device  
Disclosed is a MOSFET fabrication method capable of forming an ultra shallow junction while ensuring stability in controlling threshold voltage. The disclosed method relies on the use of a...
6514828 Method of fabricating a highly reliable gate oxide  
An ultra-thin gate oxide layer of hafnium oxide (HfO 2 ) and a method of formation are disclosed. The ultra-thin gate oxide layer of hafnium oxide (HfO 2 ) is formed by a two-step process. A thin...
6514834 Method of manufacturing a semiconductor device having a low leakage current  
A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole...
6509234 Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate  
A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed...
6489205 Semiconductor device and method for manufacturing the same  
There is described a method for manufacturing a semiconductor device, in which an isolation oxide film having a superior dimensional accuracy and an isolation oxide film of a high withstanding...
6486034 Method of forming LDMOS device with double N-layering  
The tradeoff between breakdown voltage and on-resistance for LDMOS devices has been improved by having two epitaxial N− regions instead of the single epitaxial N− region that is used by devices...
6482718 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device is provided which, even if device dimensions decrease, prevents degradation in the operating characteristics of semiconductor elements which are...
6472277 Method for fabricating a semiconductor device with an improved short channel effect  
A semiconductor device includes a semiconductor substrate having a trench in its surface, an insulating film in the trench, a doped conductive layer on the insulating film, a gate insulation film...
6468870 Method of fabricating a LDMOS transistor  
A method of manufacturing a LDHOS transistor having a dielectric block under the gate electrode. A high voltage well, low voltage well (LV PW), and field oxide regions having bird beaks are...
6420224 Stepper alignment mark formation with dual field oxide process  
A semiconductor photomask set for producing wafer alignment accuracy in a semiconductor fabrication process. The photomask set produces an alignment mark that is accurate for subsequent fabrication...
6399462 Method and structure for isolating integrated circuit components and/or semiconductor active devices  
A method of forming a field oxide or isolation region in a semiconductor die. A nitride layer (over an oxide layer disposed over a substrate) is patterned and subsequently etched so that the...
6396113 Active trench isolation structure to prevent punch-through and junction leakage  
A semiconductor device capable of controlling an electric potential of an electric conductor to reduce both a leakage caused by a punch-through and a junction leakage in a trench isolating...
6380018 Semiconductor device and method for the production thereof  
A semiconductor device having two or more types of separation oxide film are formed on the substrate of the semiconductor device by different methods so as to correspond with element types formed...
6368916 Method for fabricating nonvolatile semiconductor memory device  
The method for fabricating a nonvolatile semiconductor memory device comprises the step of forming an insulation film 14 on a semiconductor substrate 10 ; the step of introducing an impurity...
6365457 Method for manufacturing nonvolatile memory device using self-aligned source process  
There is provided a method for manufacturing a nonvolatile memory device using a self-aligned source (SAS) process. The method has the steps of forming a field oxide film on a semiconductor...
6365490 Process to improve the flow of oxide during field oxidation by fluorine doping  
A method of forming isolation structures in semiconductor substrates comprising exposing a region of the semiconductor simultaneously to a transforming agent and to a viscosity reducing agent so...
6352908 Method for reducing nitride residue in a LOCOS isolation area  
A method of forming an isolation structure includes the steps of: providing a silicon substrate; forming an upper pad oxide layer superjacent a top surface of the substrate, and a lower pad oxide...
6342431 Method for eliminating transfer gate sacrificial oxide  
A method of forming a semiconductor device, includes forming a layer of oxide on a semiconductor substrate, forming a layer of silicon nitride on the oxide layer, forming isolation regions in the...
6319795 Method for fabricating VLSI devices having trench isolation regions  
A process for fabricating a VLSI device comprising trench isolation regions. The trench isolation regions of a VLSI device is fabricated by a process comprising the following steps: Depositing and...
6309949 Semiconductor isolation process to minimize weak oxide problems  
A process for forming an isolation region while substantially eliminating weak oxide effects, comprising the steps of obtaining a semiconductor substrate patterned with a plurality of mesas with...
6300220 Process for fabricating isolation structure for IC featuring grown and buried field oxide  
An isolation structure having both deep and shallow components is formed in a semiconductor workpiece by etching the workpiece to define raised precursor active device regions separated by sunken...
6297129 Methods of forming integrated circuitry, and methods of forming dynamic random access memory circuitry  
Memory integrated circuitry includes an array of memory cells formed over a semiconductive substrate and occupying area thereover, at least some memory cells of the array being formed in lines of...
6297108 Method of forming a high voltage MOS transistor on a semiconductor wafer  
The present invention provides a method of forming a doped region with a DDD on a semiconductor wafer. The semiconductor wafer comprises a silicon substrate, a pad oxide layer, and a silicon...
6294817 Source/drain-on insulator (S/DOI) field effect transistor using oxidized amorphous silicon and method of fabrication  
Source and drain regions of field effect transistors are fabricated with an electrically insulating layer formed thereunder so as to reduce junction capacitance between each and a semiconductor...
6291311 Semiconductor device and method for producing same  
On the surface of a field oxide film (3 of FIG. 2e) formed-on a substrate region where the effective thickness in the vertical direction of a substrate is diminished due to the presence of a...
6281083 Methods of forming field effect transistor gates, and methods of forming integrated circuitry  
A method of forming integrated circuitry includes forming a field effect transistor gate over a substrate. The gate comprises semiconductive material conductively doped with a conductivity...
Matches 51 - 100 out of 421 < 1 2 3 4 5 6 7 8 9 >