Patents in Class 438/296

Matches 1 - 50 out of 635

Match	Document	Document Title
1	7615818	Semiconductor device and method of manufacturing the same The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate,...
2	7615451	Method for forming semiconductor device A method for forming a semiconductor device is provided. More specifically, a method for forming a bulb-shaped portion of a bulb-shaped recess gate is provided to overcome an etching process margin...
3	7615391	Solar cell and method of fabricating the same A method of fabricating a solar cell forms a large number of grooves on a first main surface of a p-type silicon single crystal substrate sliced out from a silicon single crystal ingot as described...
4	7611950	Method for forming shallow trench isolation in semiconductor device A method for forming shallow trench isolation in a semiconductor device. The method includes forming a pad oxide and a pad nitride on a semiconductor substrate in successive order, forming a trench...
5	7608518	Semiconductor device and method for fabricating the same A method for fabricating a semiconductor device is provided. The method includes forming a pad oxide layer on a semiconductor substrate, forming a pad nitride layer on the pad oxide layer, forming...
6	7608514	MSM binary switch memory A metal/semiconductor/metal (MSM) binary switch memory device and fabrication process are provided. The device includes a memory resistor bottom electrode, a memory resistor material over the...
7	7608509	Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layer In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region....
8	7601576	Method for fabricating semiconductor device The method for fabricating a semiconductor device comprises the steps of: forming on a silicon substrate 10 a hard mask 20 of a silicon oxide film 12 , and a silicon nitride film 14 having a...
9	7598562	Semiconductor device and method of manufacturing the same A semiconductor device including a semiconductor substrate; an element isolation region having a trench filled with an insulating film defined on the semiconductor substrate; a memory cell...
10	7595253	Method of forming the semiconductor device Example embodiments provide a semiconductor device and a method of forming the same. According to the method, a capping insulation pattern may be formed to cover the top surface of a filling...
11	7595224	Method for manufacturing integrated circuit In a method for manufacturing a light detector that is provided with an apertured part for incident light on an upper structural layer stack laminated on a semiconductor substrate, a polyimide...
12	7592223	Methods of fabricating non-volatile memory with integrated select and peripheral circuitry and post-isolation memory cell formation Non-volatile semiconductor memory devices with dual control gate memory cells and methods of forming the same using integrated select and peripheral circuitry formation are provided. Strips of...
13	7592216	Fabrication process of a semiconductor device having a capacitor A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall...
14	7588986	Method of manufacturing a semiconductor device According to an exemplary embodiment of the present invention, a method of manufacturing a semiconductor device having active regions including a SONOS device region, a high voltage device region,...
15	7585723	Method for fabricating capacitor A method for fabricating a semiconductor device includes forming an insulation structure over a substrate structure including contact plugs, etching the insulation structure to form opening regions...
16	7579664	Semiconductor device with trench type device isolation layer and method for fabricating the same Disclosed are a semiconductor device with a device isolation structure and a method for fabricating the same. The method includes the steps of: forming a plurality of trenches defining first active...
17	7579256	Method for forming shallow trench isolation in semiconductor device using a pore-generating layer A method for forming shallow trench isolation in a semiconductor device including forming a pad oxide, a pad nitride, and a pore-generating layer on an entire surface of a semiconductor substrate...
18	7579234	Method for fabricating memory device with recess channel MOS transistor A method for fabricating line type recess channel MOS transistors utilizes a lithography process to form line type gate trenches in the line type recess channel MOS transistors before finishing a...
19	7566621	Method for forming semiconductor device having fin structure A method for forming a semiconductor device having a fin structure includes (a) forming a device isolation film over a silicon substrate to define an active area, (b) etching silicon substrate of...
20	7563683	Transistor and method of fabricating the same Disclosed is a method for fabricating a gate of a field effect transistor. The method comprises a) forming a field oxide layer on a silicon substrate and then applying a photoresist layer in order...
21	7560357	Method for creating narrow trenches in dielectric materials A method for producing narrow trenches in semiconductor devices. The narrow trenches are formed by chemically changing the properties of a first dielectric layer locally, such that the side walls...
22	7560335	Memory device transistors Method and device embodiments are described for fabricating MOSFET transistors in a semiconductor also containing non-volatile floating gate transistors. MOSFET transistor gate dielectric smiling,...
23	7553748	Semiconductor device and method of manufacturing the same According to one embodiment, a gate structure including a gate insulation pattern, a gate pattern and a gate mask is formed on a channel region of a substrate to form a semiconductor device. A...
24	7550796	Germanium semiconductor device and method of manufacturing the same A germanium semiconductor device and a method of manufacturing the same are provided. The method includes the steps of: forming an isolation layer on a substrate using a shallow trench; forming a...
25	7550355	Low-leakage transistor and manufacturing method thereof A boron ion stream may be used to implant ions, such as boron ions, into the sidewalls of an active area, such as an NFET active area. The boron ion stream has both vertical tilt and horizontal...
26	7547605	Microelectronic device and a method for its manufacture Provided are a microelectronic device and a method for its manufacture. In one example, the method includes providing a semiconductor substrate layer having a first material (e.g., silicon or...
27	7544560	Image sensor and fabrication method thereof Example embodiments relate to an image sensor and a fabrication method thereof, capable of reducing dark current and a fabrication method thereof. The image sensor may include a semiconductor...
28	7538002	Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors A semiconductor fabrication process includes forming isolation structures on either side of a transistor region, forming a gate structure overlying the transistor region, removing source/drain...
29	7534687	Semiconductor device and method for manufacturing the same A semiconductor device, comprises: a transistor having structured to include a gate electrode formed on a semiconductor layer on a semiconductor substrate via a gate insulating film, and a source...
30	7531424	Vacuum wafer-level packaging for SOI-MEMS devices A device and method for fabricating the device is disclosed. The device includes a substrate having an active layer disposed on a sacrificial layer. A trench is formed in the active layer to...
31	7531415	Multilayered CMP stop for flat planarization A three layer film ( 116/114/112 ), such as nitride/oxide/nitride for a CMP stop layer ( 110 ). A gap filling material ( 120 ) is polished, stopping on the first film ( 112 ). The first film ( 112...
32	7528046	Method for manufacturing semiconductor device A method for manufacturing a semiconductor device including a substrate, a memory cell region including first pattern, first guard ring around the memory cell, second guard ring around the first...
33	7528045	MOS transistor and manufacturing methods thereof A method for manufacturing a metal-oxide semiconductor (MOS) transistor includes providing a substrate having at least a gate structure and a shallow trench isolation (STI) formed thereon,...
34	7528033	Semiconductor device with a dummy gate and a method of manufacturing a semiconductor device with a dummy gate A dummy gate may be formed over an isolation layer. A sidewall spacer may be formed next to the dummy gate. The dummy gate and the sidewall spacer may substantially cover or completely cover the...
35	7524729	Method of manufacturing a semiconductor integrated circuit device having a trench A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in...
36	7517760	Semiconductor device manufacturing method including three gate insulating films After protective insulating films are formed on first to third active regions, the protective insulating films formed on the first and third active regions are removed. Subsequently, an insulating...
37	7514336	Robust shallow trench isolation structures and a method for forming shallow trench isolation structures In a semiconductor substrate, a shallow trench isolation structure having a dielectric material disposed in voids of a trench-fill material and a method for forming the shallow trench isolation...
38	7514304	MOSFET having channel in bulk semiconductor and source/drain on insulator, and method of fabrication A MOSFET device ( 100 ) in a mono-crystalline semiconductor material ( 101 ) of a first conductivity type, which comprises a source and a drain of the opposite conductivity type, each having...
39	7501686	Semiconductor device and method for manufacturing the same A semiconductor device is disclosed that includes a semiconductor substrate, a device region disposed at a predetermined location of the semiconductor substrate, and a shallow trench isolation...
40	7501326	Method for forming isolation layer of semiconductor device A method for forming an isolation layer of a semiconductor device using a shallow trench isolation method is provided. The method includes: vertically etching a region of an insulating layer and a...
41	7498233	Method of forming an insulation layer structure having a concave surface and method of manufacturing a memory device using the same A method of forming an isolation layer structure for a semiconductor device includes forming a first structure on a substrate, the first structure including an insulation layer pattern having a...
42	7494883	Semiconductor device having a trench isolation and method of fabricating the same The present invention provides a method of fabricating a semiconductor device in which deterioration in a transistor characteristic is prevented by preventing a channel stop implantation layer from...
43	7491614	Methods for forming channel stop for deep trench isolation prior to deep trench etch Methods of manufacturing a semiconductor structure are disclosed including a deep trench isolation in which a channel stop is formed in the form of an embedded impurity region in the substrate...
44	7488659	Structure and methods for stress concentrating spacer A stress-concentrating spacer structure is a stack of an upper gate spacer with a low Young's modulus and a lower gate spacer with a high Young's modulus. The stacked spacer structure surrounds the...
45	7488658	Stressed semiconductor device structures having granular semiconductor material A method of fabricating a semiconductor device structure, includes: providing a substrate, providing an electrode on the substrate, forming a recess in the electrode, the recess having an opening,...
46	7485542	Method for producing bit lines for UCP flash memories A semiconductor device can be fabricated by forming a floating gate layer over a semiconductor body. The floating gate layer is at least partially arranged over an insulation region in the...
47	7468302	Method of forming trench type isolation film of semiconductor device A method of forming a trench type isolation film of a semiconductor device, including the steps of sequentially forming a pad oxide film and a nitride film for a hard mask on a semiconductor...
48	7468301	PMOS transistor with increased effective channel length in the peripheral region and a multi-height substrate In manufacturing a PMOS transistor, a semiconductor substrate having an active region and a field region is formed with a hard mask layer, which covers a center portion of the active region on the...
49	7456067	Method with high gapfill capability for semiconductor devices A method of performing an STI gapfill process for semiconductor devices is provided. In a specific embodiment of the invention, the method includes forming an stop layer overlying a substrate. In...
50	7440255	Capacitor constructions and methods of forming A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC...

Matches 1 - 50 out of 635

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