Patents in Class 438/287

Matches 1 - 50 out of 728

Match	Document	Document Title
1	7618902	Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer A method for forming a dielectric layer is provided. The method may include providing a semiconductor surface and etching a thin layer of the semiconductor substrate to expose a surface of the...
2	7608498	Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having...
3	7605087	Methods of forming semiconductor devices using di-block polymer layers A method of forming a semiconductor device is provided. An interlayer dielectric is formed on a substrate. A di-block polymer layer that includes a plurality of first polymer blocks and a plurality...
4	7601648	Method for fabricating an integrated gate dielectric layer for field effect transistors Methods for forming a integrated gate dielectric layer on a substrate are provided. In one embodiment, the method includes forming a silicon oxide layer on a substrate, plasma treating the silicon...
5	7601578	Defect control in gate dielectrics A method for improving high-κ gate dielectric film ( 104 ) properties. The high-κ film ( 104 ) is subjected to a two step anneal sequence. The first anneal is performed in a reducing ambient (...
6	7595203	Ferroelectric memory device with a conductive polymer layer and a method of formation A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a...
7	7592666	Semiconductor memory A semiconductor memory having an electrically writable/erasable memory cell includes a first gate insulating layer made from a compound containing silicon and oxygen; a first charge-storage layer...
8	7588989	Dielectric multilayer structures of microelectronic devices and methods for fabricating the same A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric...
9	7588988	Method of forming apparatus having oxide films formed using atomic layer deposition A dielectric layer containing an atomic layer deposited insulating metal oxide film having multiple metal components and a method of fabricating such a dielectric layer produce a reliable...
10	7585736	Method of manufacturing semiconductor device with regard to film thickness of gate oxide film A method of manufacturing a semiconductor device includes steps (a) to (d). The step (a) is a step of forming a first insulating film and a nitride film on a semiconductor substrate in this order....
11	7582534	Chemical doping of nano-components A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided...
12	7579247	Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements Non-volatile memory cells store a level of charge corresponding to the data being stored in a dielectric material storage element that is sandwiched between a control gate and the semiconductor...
13	7572699	Process of forming an electronic device including fins and discontinuous storage elements An electronic device can include a substrate including a fin lying between a first trench and a second trench, wherein the fin is no more than approximately 90 nm wide. The electronic device can...
14	7566608	Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C 2 H 5 )(CH 3 )} 4 ], TEMAZ) and...
15	7564114	Semiconductor devices and methods of manufacture thereof Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming an interface...
16	7563729	Method of forming a dielectric film A method of forming a dielectric film on a substrate surface includes the steps of forming the dielectric film on the substrate surface in plural steps, and reforming, in each of the plural steps...
17	7560772	Semiconductor integrated circuit device and manufacturing method thereof After silicon oxide film ( 9 ) is formed on the surface of a semiconductor substrate ( 1 ), the silicon oxide film ( 9 ) in a region in which a gate insulation film having a small effective...
18	7560396	Material for electronic device and process for producing the same An electronic device material comprising at least an electronic device substrate and a silicon oxynitride film disposed on the substrate is provided. The silicon oxynitride film is characterized by...
19	7560361	Method of forming gate stack for semiconductor electronic device A method of forming a gate stack for semiconductor electronic devices utilizing wafer bonding of at least one structure containing a high-k dielectric material is provided. The method of the...
20	7560349	Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same A semiconductor device and/or gate structure having a composite dielectric layer and methods of manufacturing the same is provided. In the semiconductor device, gate structure, and methods...
21	7553729	Method of manufacturing non-volatile memory device A method of manufacturing a non-volatile memory device includes the steps of forming gates respectively having a structure in which a gate insulating layer, a first conductive layer, a dielectric...
22	7550823	Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide...
23	7550353	Method of forming semiconductor device One embodiment of a method for forming a semiconductor device can include forming a gate pattern on a semiconductor substrate and performing a selective re-oxidation process on the gate pattern in...
24	7550346	Method for forming a gate dielectric of a semiconductor device Disclosed is a method for forming a gate dielectric in a semiconductor device. The present method includes forming a first dielectric layer on a semiconductor substrate; removing a portion of the...
25	7550345	Methods of forming hafnium-containing materials The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are...
26	7544595	Forming a semiconductor device having a metal electrode and structure thereof A method for forming a semiconductor device includes forming a gate dielectric over a substrate, forming a metal electrode over the gate dielectric, forming a first sacrificial layer which includes...
27	7544569	Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second...
28	7541626	High K-gate oxide TFTs built on transparent glass or transparent flexible polymer substrate A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A...
29	7541246	Method of manufacturing semiconductor device A gate insulating film and a gate electrode are formed on a silicon substrate. The gate insulating film contains at least hafnium, oxygen, fluorine, and nitrogen. The fluorine concentration is high...
30	7541243	Methods of forming integrated circuit devices having gate electrodes formed on non-uniformly thick gate insulating layers Methods of forming an integrated circuit device include forming first and second device isolation regions at side-by-side locations within a semiconductor substrate to thereby define a...
31	7541242	NROM memory cell, memory array, related devices and methods An array of memory cells configured to store at least one bit per one F 2 includes substantially vertical structures providing an electronic memory function spaced apart a distance equal to one...
32	7538001	Transistor gate forming methods and integrated circuits A transistor gate forming method includes forming a first and a second transistor gate. Each of the two gates includes a lower metal layer and an upper metal layer. The lower metal layer of the...
33	7538000	Method of forming double gate transistors having varying gate dielectric thicknesses Double gate transistors ( 12, 13 ) having different bottom gate dielectric thicknesses are formed on a first wafer ( 101 ) by forming a first gate dielectric layer ( 107 ); removing part of the...
34	7534684	Methods of forming non-volatile memory devices having a multi-layered charge storage layer A non-volatile memory device includes a substrate having a first region and a second region. A first gate electrode is disposed on the first region. A multi-layered charge storage layer is...
35	7531405	Method of manufacturing a dielectric layer and corresponding semiconductor device A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in...
36	7531404	Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer A method of forming a transistor gate stack having an annealed gate dielectric layer begins by providing a substrate that includes a first and second spacer separated by a trench. A conformal...
37	7528434	Production process for a semiconductor component with a praseodymium oxide dielectric The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the...
38	7528044	CMOSFET with hybrid-strained channels Disclosed is a method of manufacturing microelectronic devices including forming a silicon substrate with first and second wells of different dopant characteristics, forming a first strained...
39	7528043	Scalable gate and storage dielectric Gate and storage dielectric systems and methods of their fabrication are presented. A passivated overlayer deposited between a layer of dielectric material and a gate or first storage plate...
40	7528037	Flash memory having a high-permittivity tunnel dielectric A high permittivity tunneling dielectric is used in a flash memory cell to provide greater tunneling current into the floating gate with smaller gate voltages. The flash memory cell has a substrate...
41	7524727	Gate electrode having a capping layer A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer,...
42	7521325	Semiconductor device and method for fabricating the same A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film ...
43	7521324	Semiconductor device and method for manufacturing the same In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a...
44	7517751	Substrate treating method A substrate processing method includes the step of forming an oxide film by oxidizing a silicon substrate surface and the step of nitriding the oxide film to form an oxynitride film, wherein there...
45	7514376	Manufacture of semiconductor device having nitridized insulating film A method for manufacturing a semiconductor device is disclosed which enables to suppress decrease in the mobility in a channel region by suppressing piercing of boron through a gate insulation film...
46	7510975	Method for manufacturing a semiconductor device having trenches defined in the substrate surface In the method for manufacturing a semiconductor device according to the invention including the step of forming trenches having the depth thereof in perpendicular to the major surface of a...
47	7510942	Molecular modifications of metal/dielectric interfaces A method of increasing the work function of micro-electrodes includes providing a metal or silica surface functionalized with reactive groups and contacting the functionalized surface with a...
48	7510931	Method of fabricating a nonvolatile memory device A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a...
49	7507652	Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure Some methods that are provided form a composite dielectric structure on a substrate. A first dielectric layer that includes metal and oxygen is formed on a substrate. A preliminary dielectric layer...
50	7507644	Method of forming dielectric layer of flash memory device A method of manufacturing a flash memory device, wherein according to one embodiment, when a high dielectric material is formed by a remote plasma atomic layer deposition method, first and second...

Matches 1 - 50 out of 728

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