Patents in Class 438/279

Matches 1 - 50 out of 399

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Match	Document	Document Title
1	8183605	Reducing transistor junction capacitance by recessing drain and source regions By recessing portions of the drain and source areas on the basis of a spacer structure, the subsequent implantation process for forming the deep drain and source regions may result in a moderately...
2	8178401	Method for fabricating dual-metal gate device A method of fabricating a MOS transistor that comprises a dual-metal gate that is formed from heterotypical metals. A gate dielectric (34), such as HfO2, is deposited on a semiconductor substrate....
3	8138055	Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same In a method of making a semiconductor device, a first gate stack is formed on a substrate at a pFET region, which includes a first gate electrode material. The source/drain regions of the substrate...
4	8138551	Semiconductor device with transistors and its manufacturing method A semiconductor device includes a semiconductor substrate, a first transistor including a first gate electrode, a first diffusion region, and a second diffusion region respectively formed above the...
5	8133787	SiC semiconductor device and method for manufacturing the same A SiC semiconductor device having a MOS structure includes: a SiC substrate; a channel region providing a current path; first and second impurity regions on upstream and downstream sides of the...
6	8124468	Process of forming an electronic device including a well region An electronic device including an integrated circuit can include a buried conductive region and a semiconductor layer overlying the buried conductive region, and a vertical conductive structure...
7	8114739	Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same Methods are provided for fabricating a transistor. An exemplary method involves depositing an oxide layer overlying a layer of semiconductor material, forming an oxygen-diffusion barrier layer...
8	8105892	Thermal dual gate oxide device integration A method is provided that includes providing a semiconductor substrate including at least a thin gate oxide pFET device region and a thick gate oxide pFET device region and forming a thin gate...
9	8101485	Replacement gates to enhance transistor strain Some embodiments of the present invention include apparatuses and methods relating to NMOS and PMOS transistor strain.
10	8101486	Methods for forming isolated fin structures on bulk semiconductor material Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second...
11	8076190	Sea-of-fins structure on a semiconductor substrate and method of fabrication A semiconductor device and a method of fabricating a semiconductor device is disclosed, the method comprises including: forming etching an oxide layer to form a pattern of parallel oxide bars on a...
12	8067288	Configuration and method of manufacturing the one-time programmable (OTP) memory cells This invention discloses a method for manufacturing a one-time programmable (OTP) memory includes a first and second MOS transistors connected in parallel and controlled by a common gate formed...
13	8058119	Device scheme of HKMG gate-last process The present disclosure provides a method for making metal gate stacks of a semiconductor device. The method includes forming a high k dielectric material layer on a semiconductor substrate; forming...
14	8026142	Method of fabricating semiconductor transistor devices with asymmetric extension and/or halo implants A method of fabricating semiconductor devices begins by providing or fabricating a device structure that includes a semiconductor material and a plurality of gate structures formed overlying the...
15	8012836	Semiconductor devices and methods for fabricating the same Semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device comprises a substrate with a plurality of isolation structures formed...
16	8003506	Single poly CMOS imager More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent...
17	7998818	Method for making semiconductor element structure A method for forming a semiconductor element structure is provided. First, a substrate including a first MOS and a second MOS is provided. The gate electrode of the first MOS is connected to the...
18	7989852	Integrated circuits and interconnect structure for integrated circuits An integrated circuit includes N plane-like metal layers. A first plane-like metal layer includes M contact portions that communicate with the N plane-like metal layers, respectively. The first...
19	7972920	Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device Vertical MISFETs are formed over drive MISFETs and transfer MISFETs. The vertical MISFETs comprise rectangular pillar laminated bodies each formed by laminating a lower semiconductor layer (drain),...
20	7968447	Semiconductor device and methods of manufacturing the same A semiconductor device may include plugs disposed in a zigzag pattern, interconnections electrically connected to the plugs and a protection pattern which is interposed between the plugs and the...
21	7964467	Method, structure and design structure for customizing history effects of soi circuits A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed between a gate...
22	7951678	Metal-gate high-k reference structure Disclosed are embodiments of an integrated circuit structure that incorporates at least two field effect transistors (FETs) that have the same conductivity type and essentially identical...
23	7932178	Integrated circuit having a plurality of MOSFET devices A method is provided for manufacturing an integrated circuit having a plurality of MOSFET devices, comprising the steps of: providing a plurality of MOSFET devices each having a first and a second...
24	7919377	Contactless flash memory array A method for forming a contactless flash memory cell array is disclosed. According to an embodiment of the invention, a plurality of active regions is formed on a substrate. An insulating layer is...
25	7915125	Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device is provided which comprises: forming a first gate insulating film and a second gate insulating film in an active region of a semiconductor...
26	7910441	Multi-gate semiconductor device and method for forming the same A semiconductor device includes a substrate (20), a source region (58) formed over the substrate, a drain region (62) formed over the substrate, a first gate electrode (36) over the substrate...
27	7883974	Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having...
28	7863676	Semiconductor devices and methods of fabricating the same A semiconductor device includes a device isolation layer in a semiconductor substrate, an active region defined by the device isolation layer, the active region including a main surface and a...
29	7863139	Double gate FET and fabrication process A method of fabricating a double gate FET on a silicon substrate includes the steps of sequentially epitaxially growing a lower gate layer of crystalline rare earth silicide material on the...
30	7858480	Semiconductor device and method of fabricating the same A semiconductor device according to one embodiment includes: a semiconductor substrate comprising an element isolation region; two gate electrodes formed in substantially parallel on the...
31	7851872	Efficient transistor structure An integrated circuit comprises a first source, a first drain, a second source, a first gate arranged between the first source and the first drain, and a second gate arranged between the first...
32	7851312	Semiconductor component and method of manufacture A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A body region is formed in a semiconductor material that...
33	7838407	Method for protecting the gate of a transistor and corresponding integrated circuit A gate of a transistor in an integrated circuit is protected against the production of an interconnection terminal for a source/drain region. The transistor includes a substrate, at least one...
34	7829419	Semiconductor device and method for manufacturing the same A semiconductor device is provided with a semiconductor substrate, a plurality of active regions separated from each other by element isolation regions formed on the semiconductor substrate; gate...
35	7824975	Method of fabricating semiconductor device having gate spacer layer with uniform thickness A method of fabricating a semiconductor device having a gate spacer layer with a uniform thickness wherein a gate electrode layer pattern is formed on a substrate and ion implantation processes of...
36	7821809	Nonvolatile memory device and method including resistor and transistor A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity...
37	7804141	Semiconductor element structure and method for making the same A semiconductor element structure includes a first MOS having a first high-K material and a first metal for use in a first gate, a second MOS having a second high-K material and a second metal for...
38	7790541	Method and structure for forming multiple self-aligned gate stacks for logic devices A method for forming multiple self-aligned gate stacks, the method comprising, forming a first group of gate stack layers on a first portion of a substrate, forming a second group of gate stack...
39	7790544	Method of fabricating different gate oxides for different transistors in an integrated circuit An integrated circuit and gate oxide forming process are disclosed which provide a gate structure that is simple to integrate with conventional fabrication processes while providing different gate...
40	7785948	Semiconductor element and process for producing the same The present invention provides a thin film transistor having excellent formability and processability, and particularly a thin film transistor using plastics as a substrate; an organic...
41	7781291	Semiconductor device and method for fabricating the same A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate...
42	7767531	Method of forming transistor having channel region at sidewall of channel portion hole According to some embodiments of the invention, a method of forming a transistor includes forming a device isolation layer in a semiconductor substrate. The device isolation layer is formed to...
43	7754555	Transistor having a channel with biaxial strain induced by silicon/germanium in the gate electrode By forming a stressed semiconductor material in a gate electrode, a biaxial tensile strain may be induced in the channel region, thereby significantly increasing the charge carrier mobility. This...
44	7754556	Reducing transistor junction capacitance by recessing drain and source regions By recessing portions of the drain and source areas on the basis of a spacer structure, the subsequent implantation process for forming the deep drain and source regions may result in a moderately...
45	7749816	Systems and arrangements to interconnect components of a semiconductor device Systems and arrangements to interconnect cells and structures within cells of an integrated circuit to enhance cell density are disclosed. Embodiments comprise an adjusted polysilicon gate pitch to...
46	7732283	Fabricating method of semiconductor device A method of fabricating a semiconductor device is provided. Spacers can be formed on adjacent gate structures and used as an ion implantation mask for forming source/drain regions. The spacers can...
47	7718495	Methods of forming integrated circuitry, methods of forming memory circuitry, and methods of forming field effect transistors The invention includes methods of forming integrated circuitry, methods of forming memory circuitry, and methods of forming field effect transistors. In one implementation, conductive metal...
48	7718499	Method of fabricating a semiconductor device In a method of fabricating a semiconductor device, an additive gas is mixed with an etching gas to reduce a fluorine ratio of the etching gas. The etching gas having a reduced fluorine rate is...
49	7714395	Static random access memory and fabricating method thereof A static random access memory at least includes: pluralities of transistors disposed on a substrate, each transistor at least includes a gate, a gate dielectric layer, a source doped region and a...
50	7713825	LDMOS transistor double diffused region formation process Exemplary embodiments provide manufacturing methods for forming a doped region in a semiconductor. Specifically, the doped region can be formed by multiple ion implantation processes using a...

Matches 1 - 50 out of 399

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