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9041057 Field effect transistor device with shaped conduction channel  
A field effect transistor device includes a substrate, a silicon germanium (SiGe) layer disposed on the substrate, gate dielectric layer lining a surface of a cavity defined by the substrate and...
9041090 Methods for forming a string of memory cells and apparatuses having a vertical string of memory cells including metal  
Methods for forming a string of memory cells and apparatuses having a vertical string of memory cells are disclosed. One such string of memory cells can be formed at least partially in a stack of...
9034712 Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage  
A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high...
9029930 FinFET device with epitaxial structure  
A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin...
9029236 Termination structure with multiple embedded potential spreading capacitive for trench MOSFET and method  
A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench MOSFET atop a bulk semiconductor layer...
9029220 Method of manufacturing a semiconductor device with self-aligned contact plugs and semiconductor device  
Semiconductor oxide pillars are selectively grown on semiconductor mesas between precursor structures that extend from a main surface into a semiconductor substrate. Spaces between the...
9029872 Semiconductor device and method for fabricating the same  
The present inventive concept has been made in an effort to improve the breakdown voltage of a silicon carbide MOSFET using a trench gate. A semiconductor device according to the present inventive...
9029215 Method of making an insulated gate semiconductor device having a shield electrode structure  
In one embodiment, a method for forming a semiconductor device includes forming trench and a dielectric layer along surfaces of the trench. A shield electrode is formed in a lower portion of the...
9024377 Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof  
A semiconductor device capable of reducing influences of adjacent word lines is provided in the present invention. The semiconductor device includes: a substrate, and a word line disposed in the...
9023703 Method of manufacturing semiconductor device using an oxidation process to increase thickness of a gate insulation layer  
According to a method of manufacturing a semiconductor device including a buried gate, after a recess is formed by etching a semiconductor substrate, since an etching back process is not performed...
9024413 Semiconductor device with IGBT cell and desaturation channel structure  
A semiconductor device includes an IGBT cell including a second-type doped drift zone, and a desaturation semiconductor structure for desaturating a charge carrier concentration in the IGBT cell....
9018699 Silicon carbide semiconductor element and method for fabricating the same  
A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a...
9018700 Direct-drain trench FET with source and drain isolation  
In a general aspect, an apparatus can include a semiconductor layer of a first conductivity type, the semiconductor layer having a top-side surface. The apparatus can also include a well region of...
9012309 Collections of laterally crystallized semiconductor islands for use in thin film transistors  
Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin...
9012957 MOS transistor  
A MOS transistor including a U-shaped channel-forming semiconductor region and source and drain regions having the same U shape located against the channel-forming region on either side thereof,...
9012984 Field effect transistor devices with regrown p-layers  
A transistor device includes a drift layer having a first conductivity type, a body layer on the drift layer, the body layer having a second conductivity type opposite the first conductivity type,...
9013006 Semiconductor device and manufacturing method of the same  
A method for manufacturing a semiconductor device having a field-effect transistor, including forming a trench in a semiconductor substrate, forming a first insulating film in the trench, forming...
9006067 Semiconductor device and method of fabricationg the same  
A method of fabricating a semiconductor device includes forming first gate patterns on a semiconductor substrate using an etch mask pattern, forming a trench in the semiconductor substrate between...
9006090 Method for forming shielded gate of MOSFET  
A method for forming a shielded gate of a MOSFET includes steps as following: providing a semiconductor substrate having at least one trench, forming a bottom gate oxide region and a shielded gate...
9006736 Semiconductor device  
To give favorable electrical characteristics to a semiconductor device. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a pair of electrodes...
9006745 Semiconductor device and fabrication method thereof  
An MOSFET includes a silicon carbide substrate, an active layer, a gate oxide film, and a gate electrode. The active layer includes a body region where an inversion layer is formed at a region in...
9006063 Trench MOSFET  
A method for forming a trench MOSFET includes doping a body region of the trench MOSFET in multiple ion implantation steps each having different ion implantation energy. The method further...
9006818 Insulated gate field effect transistor and method of manufacturing the same  
An insulated gate field effect transistor configured to reduce the occurrence of a short-circuit fault, and a method of manufacturing the insulated gate field effect transistor are provided. A FET...
9006097 Cu pillar bump with electrolytic metal sidewall protection  
A method of forming a bump structure includes providing a semiconductor substrate and forming an under-bump-metallurgy (UBM) layer on the semiconductor substrate. The method further includes...
8999846 Elongated via structures  
An integrated circuit structure includes a plurality of insulator layers (connected to each other) that form a laminated structure. Further included are via openings within each of the insulator...
8999789 Super-junction trench MOSFETs with short terminations  
A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface...
8999790 Method of forming a trench gate MOSFET having a thick bottom oxide  
A method of forming a trench gate MOSFET is provided. An epitaxial layer is formed on a substrate. A trench is formed in the epitaxial layer. A first insulating layer is conformally formed on...
8999788 Manufacturing method of GaN-based semiconductor device and semiconductor device  
Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed...
8999769 Integration of high voltage trench transistor with low voltage CMOS transistor  
A method of forming a device is disclosed. A substrate defined with a device region is provided. A gate having an upper and a lower portion is formed in a trench in the substrate in the device...
9000516 Super-junction device and method of forming the same  
A super-junction device including a unit region is disclosed. The unit region includes a heavily doped substrate; a first epitaxial layer over the heavily doped substrate; a second epitaxial layer...
8999783 Method for producing a semiconductor device with a vertical dielectric layer  
A method for producing a semiconductor device is disclosed. The method includes providing a semiconductor body having a first surface, and a second surface opposite the first surface, producing a...
8993391 Semiconductor device with recess gate and method for fabricating the same  
A method for fabricating a semiconductor device includes forming a conductive layer over first and second regions of a semiconductor substrate, forming a trench extended in the first region of the...
8994101 Shielded gate trench MOS with improved source pickup layout  
A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and...
8987090 Method of manufacturing a semiconductor device with device separation structures  
A method of manufacturing a semiconductor device includes introducing at least a first and a second trench pattern including array trenches from a first surface into a semiconductor substrate,...
8987091 III-N material structure for gate-recessed transistors  
III-N transistors with recessed gates. An epitaxial stack includes a doped III-N source/drain layer and a III-N etch stop layer disposed between a the source/drain layer and a III-N channel layer....
8980714 Semiconductor device with buried gate electrode structures  
A method of manufacturing a semiconductor device includes introducing at least a first and a second trench pattern from a first surface into a semiconductor substrate. An array isolation region...
8980715 Multilayer dielectric structures for semiconductor nano-devices  
Multilayer dielectric structures are provided having silicon nitride (SiN) and silicon oxynitride (SiNO) films for use as capping layers, liners, spacer barrier layers, and etch stop layers, and...
8980712 3D non-volatile memory device and method for fabricating the same  
A non-volatile memory device having a string of a plurality of memory cells that are serially coupled, wherein the string of memory cells includes a plurality of second channels of a pillar type,...
8981466 Multilayer dielectric structures for semiconductor nano-devices  
Multilayer dielectric structures are provided having silicon nitride (SiN) and silicon oxynitride (SiNO) films for use as capping layers, liners, spacer barrier layers, and etch stop layers, and...
8980713 Method for fabricating a metal high-k gate stack for a buried recessed access device  
A method for fabricated a buried recessed access device comprising etching a plurality of gate trenches in a substrate, implanting and activating a source/drain region in the substrate, depositing...
8981470 Semiconductor device and manufacturing method of the same  
The performance of power semiconductor device of partial gate type structure may be improved by providing the source region only adjacent the gate electrodes in the structure, and providing the...
8980654 Ion implantation method and ion implantation apparatus  
The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based...
8981467 Semiconductor device having vertical-type channel  
A semiconductor device includes an active region including a surface region and a first recess formed on both sides of the surface region, the active region extending along a first direction; a...
8980716 Self aligned trench MOSFET with integrated diode  
Transistor devices can be fabricated with an integrated diode using a self-alignment. The device includes a doped semiconductor substrate having one or more electrically insulated gate electrodes...
8981469 Power semiconductor device  
A problem associated with n-channel power MOSFETs and the like that the following is caused even by relatively slight fluctuation in various process parameters is solved: source-drain breakdown...
8981384 Semiconductor device and method for manufacturing same  
There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes a substrate...
8975139 Manufacturing method of silicon carbide semiconductor device  
A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer;...
8975138 Method of creating a maskless air gap in back end interconnects with double self-aligned vias  
A method including patterning a thickness dimension of an interconnect material into a thickness dimension for a wiring line with one or more vias extending from the wiring line and introducing a...
8975137 Process of forming slit in substrate  
A process of forming a slit in a substrate is provided. A mask layer is formed on a substrate, wherein the mask layer does not include carbon. An etching process is performed to be substrate by...
8975662 Method of manufacturing a semiconductor device using an impurity source containing a metallic recombination element and semiconductor device  
Source zones of a first conductivity type and body zones of a second conductivity type are formed in a semiconductor die. The source zones directly adjoin a first surface of the semiconductor die....