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9040377 Low loss SiC MOSFET  
A Vertical Multiple Implanted Silicon Carbide Power MOSFET (VMIMOSFET) includes a first conductivity semiconductor substrate, a first conductivity semiconductor drift layer on the top of the...
9041095 Vertical transistor with surrounding gate and work-function metal around upper sidewall, and method for manufacturing the same  
A method of manufacturing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer, a first insulating film around the fin-shaped semiconductor layer, and a...
9040378 Methods of forming semiconductor devices including vertical channels and semiconductor devices formed using such methods  
Methods of forming semiconductor devices including vertical channels and semiconductor devices formed using such methods are provided. The methods may include forming a stack including a plurality...
9040952 Semiconductor device and method of fabricating the same  
A semiconductor device includes a first conductive layer extending in a first direction, a second conductive layer extending in a second direction and disposed over the first conductive layer, the...
9040376 Semiconductor device and method for manufacturing the same  
A semiconductor device forms a salicide layer to surround an upper surface and a circumference of a lateral surface of a pillar. A contact area between the pillar and a lower electrode may be...
9034708 Semiconductor device fabrication method and semiconductor device  
There is provided a method of fabricating a semiconductor device, the method including: forming a first semiconductor region at a front surface of a substrate, the first semiconductor region...
9035376 Semiconductor device and method of manufacturing the same  
A semiconductor device and method of manufacturing the semiconductor device is disclosed in which the tradeoff relationship between the Eoff and the turning OFF dV/dt is improved at a low cost...
9029938 Semiconductor memory device and method for manufacturing same  
According to one embodiment, the stacked body includes a plurality of electrode layers and a plurality of insulating layers alternately stacked on the substrate. The plurality of contact parts are...
9029872 Semiconductor device and method for fabricating the same  
The present inventive concept has been made in an effort to improve the breakdown voltage of a silicon carbide MOSFET using a trench gate. A semiconductor device according to the present inventive...
9029218 Tunneling field-effect transistor with direct tunneling for enhanced tunneling current  
Horizontal and vertical tunneling field-effect transistors (TFETs) having an abrupt junction between source and drain regions increases probability of direct tunneling of carriers (e.g., electrons...
9023702 Nonvolatile memory device and method for fabricating the same  
A nonvolatile memory device may include a plurality of channel layers protruded substantially perpendicularly over a substrate having a well region, a structure configured to have a plurality of...
9024291 Resistive memory device and fabrication method thereof  
A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a bottom structure including a heating electrode, data storage materials, each of the...
9023701 Three-dimensional memory and method of forming the same  
A method of forming a three-dimensional memory is provided. A stacked structure is patterned to form a comb structure including a bit line pad extending along a first direction and comb-teeth...
9024413 Semiconductor device with IGBT cell and desaturation channel structure  
A semiconductor device includes an IGBT cell including a second-type doped drift zone, and a desaturation semiconductor structure for desaturating a charge carrier concentration in the IGBT cell....
9024381 Semiconductor device and fabricating method thereof  
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, and a super junction area that is disposed above the substrate. The super...
9018063 MOSFETs with channels on nothing and methods for forming the same  
A method includes performing an epitaxy to grow a semiconductor layer, which includes a top portion over a semiconductor region. The semiconductor region is between two insulation regions that are...
9018062 Wafer structure and power device using the same  
In one embodiment, a method of making a super-junction MOS transistor in a wafer can include: (i) forming a first doping layer having a high doping concentration; (ii) forming a second doping...
9018638 MOSFET device  
A MOSFET device is provided. An N-type epitaxial layer is disposed on an N-type substrate. An insulating trench is disposed in the epitaxial layer. A P-type well region is disposed in the...
9018635 Integrated electronic device with edge-termination structure and manufacturing method thereof  
An embodiment of an integrated electronic device formed in a semiconductor body delimited by a lateral surface, which includes: a substrate made of a first semiconductor material; a first...
9018699 Silicon carbide semiconductor element and method for fabricating the same  
A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a...
9012309 Collections of laterally crystallized semiconductor islands for use in thin film transistors  
Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin...
9012974 Vertical memory devices and methods of manufacturing the same  
A vertical memory device includes a channel, a ground selection line (GSL), word lines, a string selection line (SSL), and a contact. The channel includes a vertical portion and a horizontal...
9006062 Method of manufacturing a semiconductor device including an edge area  
A method of manufacturing a semiconductor device includes providing a doped layer containing a first dopant of a first conductivity type and forming a counter-doped zone in the doped layer in an...
9006063 Trench MOSFET  
A method for forming a trench MOSFET includes doping a body region of the trench MOSFET in multiple ion implantation steps each having different ion implantation energy. The method further...
9006818 Insulated gate field effect transistor and method of manufacturing the same  
An insulated gate field effect transistor configured to reduce the occurrence of a short-circuit fault, and a method of manufacturing the insulated gate field effect transistor are provided. A FET...
8999789 Super-junction trench MOSFETs with short terminations  
A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface...
8999787 Semiconductor device  
A semiconductor device includes a plurality of conductive layers and a plurality of insulating layers formed alternately with each other, at least one channel layer passing through the plurality...
8999821 Fin formation by epitaxial deposition  
Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an...
8993399 FinFET structures having silicon germanium and silicon fins  
A finned structure is fabricated using a bulk silicon substrate having a carbon doped epitaxial silicon layer. A pFET region of the structure includes silicon germanium fins. Such fins are formed...
8987089 Methods of fabricating a three-dimensional non-volatile memory device  
A method of fabricating a memory device, such as a three-dimensional NAND string, includes forming a trench through a stack of alternating first and second material layers to expose a source...
8987083 Uniform gate height for semiconductor structure with N and P type fins  
In a non-planar based semiconductor process where the structure includes both N and P type raised structures (e.g., fins), and where a different type of epitaxy is to be grown on each of the N and...
8987088 Method of manufacturing nonvolatile semiconductor memory device  
According to one embodiment, a method includes forming a gate insulating layer structure covering first and second stacked layer structures, forming a first conductive layer on the gate insulating...
8980712 3D non-volatile memory device and method for fabricating the same  
A non-volatile memory device having a string of a plurality of memory cells that are serially coupled, wherein the string of memory cells includes a plurality of second channels of a pillar type,...
8980731 Methods of forming a semiconductor device  
Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening...
8975136 Manufacturing a super junction semiconductor device  
A super junction semiconductor device includes a semiconductor portion with a first surface and a parallel second surface. A doped layer of a first conductivity type is formed at least in a cell...
8975138 Method of creating a maskless air gap in back end interconnects with double self-aligned vias  
A method including patterning a thickness dimension of an interconnect material into a thickness dimension for a wiring line with one or more vias extending from the wiring line and introducing a...
8975689 Semiconductor apparatus having vertical channel transistor and method of fabricating the same  
A semiconductor apparatus and a method of fabricating the same are provided. The method includes sequentially depositing a gate electrode material and a sacrificial insulating layer on a...
8969155 Fin structure with varying isolation thickness  
Semiconductor fins having isolation regions of different thicknesses on the same integrated circuit are disclosed. Nitride spacers protect the lower portion of some fins, while other fins do not...
8969912 Method and system for a GaN vertical JFET utilizing a regrown channel  
A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second...
8969154 Methods for fabricating semiconductor device structures and arrays of vertical transistor devices  
A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region between a first side and second side of...
8969944 Semiconductor integrated circuit and method of producing the same  
Provided is a semiconductor integrated circuit that uses a novel vertical MOS transistor that is free of interference between cells, that enables the short-channel effect to be minimized, that...
8969959 Semiconductor device and method of manufacturing the same  
There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a body layer of a first conductivity type; an active layer of a second...
8962425 Semiconductor device and method of forming junction enhanced trench power MOSFET having gate structure embedded within trench  
A semiconductor device has a substrate and trench formed partially through the substrate. A drain region is formed in the substrate as a second surface of the substrate. An epitaxial region is...
8963217 Wafer structure and power device using the same  
In one embodiment, a wafer structure configured for a power device can include: (i) a first doping layer having a high doping concentration; (ii) a second doping layer on the first doping layer,...
8963240 Shielded gate trench (SGT) mosfet devices and manufacturing processes  
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells...
8962465 Methods of forming gated devices  
Some embodiments include methods of forming gated devices. An upper region of a semiconductor material is patterned into a plurality of walls that extend primarily along a first direction. The...
8957471 Semiconductor memory device and method for manufacturing same  
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a conductive member, a semiconductor pillar, and a charge storage layer. The stacked body is...
8955357 System and methods of embedding material in a glass substrate  
A method for embedding a dopant into a glass substrate is provided. The method may include the steps of applying the dopant to a surface of the glass substrate, positioning the glass substrate...
8951865 Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereof  
Memory arrays and their formation are disclosed. One such memory array has a string of series-coupled memory cells with a substantially vertical portion. A distance between adjacent memory cells...
8952443 Three dimensional semiconductor memory devices and methods of fabricating the same  
A 3D semiconductor device includes an electrode structure has electrodes stacked on a substrate, semiconductor patterns penetrating the electrode structure, charge storing patterns interposed...