Patents in Class 438/268

Matches 1 - 50 out of 591

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Match	Document	Document Title
1	7622771	Semiconductor apparatus A semiconductor apparatus includes a first semiconductor layer, a second semiconductor layer provided on a major surface of the first semiconductor layer, a third semiconductor layer provided on...
2	7615449	Semiconductor device having a recess channel transistor The semiconductor device having a recess channel transistor includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower...
3	7612431	Trench polysilicon diode Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second...
4	7611949	Method of fabricating metal-oxide-semiconductor transistor A method of fabricating a metal-oxide-semiconductor (MOS) transistor is provided. First, a patterned hard mask layer with an opening therein is formed over the substrate. A spacer is formed on the...
5	7608510	Alignment of trench for MOS Manufacturing a power transistor by forming a gate structure on a first layer, forming a trench in the first layer, self aligned with the gate structure, and forming part of the transistor in the...
6	7605036	Method of forming floating gate array of flash memory device The method of forming a floating gate array of a flash memory device includes: (a) forming a plurality of device isolations, which define active device regions, in a semiconductor substrate, the...
7	7602014	Superjunction power MOSFET An embodiment of an MOS device includes a semiconductor substrate of a first conductivity type, a first region of the first conductivity type having a length L acc and a net active dopant...
8	7601596	Semiconductor device with trench transistors and method for manufacturing such a device According to one embodiment, a method for manufacturing a semiconductor device includes forming trenches in a first side of a semiconductor material and forming a thick oxide layer on the trenches...
9	7601595	Surround gate access transistors with grown ultra-thin bodies A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid phase epitaxial growth process to...
10	7595241	Method for fabricating silicon carbide vertical MOSFET devices A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region...
11	7588985	Method for fabricating fin transistor A method for fabricating a fin transistor includes patterning a first pad layer provided over a substrate using an isolation mask, etching the substrate using the isolation mask and the first pad...
12	7588977	Method of fabricating a MOS field effect transistor having plurality of channels A method of fabricating a MOSFET provides a plurality of nanowire-shaped channels in a self-aligned manner. According to the method, a first material layer and a semiconductor layer are...
13	7585711	Semiconductor-on-insulator (SOI) strained active area transistor A selectively strained MOS device such as selectively strained PMOS device making up an NMOS and PMOS device pair without affecting a strain in the NMOS device the method including providing a...
14	7585705	Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop A method and device structure are disclosed for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop the trench MOSFET. The ESD...
15	7582531	Method for producing a buried semiconductor layer A method for producing a region of increased doping in an n-doped semiconductor layer which is buried in a semiconductor body of a vertical power transistor and which is arranged between a p-doped...
16	7582519	Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction A semiconductor structure is formed as follows. A semiconductor region is formed to have a P-type region and a N-type region forming a PN junction therebetween. A first trench is formed extending...
17	7579650	Termination design for deep source electrode MOSFET A power semiconductor device that includes a plurality of source trenches that extend to a depth below the gate electrodes and a termination region that includes a termination trench that is as...
18	7579648	Semiconductor device having a channel pattern and method of manufacturing the same A semiconductor device may include a tubular channel pattern vertically extending from a semiconductor substrate. A gate insulation layer may be provided on faces exposed through the channel...
19	7566620	DRAM including a vertical surround gate transistor DRAM memory cells having a feature size of less than about 4F2 include vertical surround gate transistors that are configured to reduce any short channel effect on the reduced size memory cells. In...
20	7566619	Methods of forming integrated circuit devices having field effect transistors of different types in different device regions A method of forming an integrated circuit device includes forming a non-planar field-effect transistor in a cell array portion of a semiconductor substrate and forming a planar field-effect...
21	7564099	Monolithic MOSFET and Schottky diode device A Schottky diode is integrated into a planar or trench topology MOSFET having parallel spaced source regions diffused into spaced base stripes. The diffusions forming the source and base stripes...
22	7557406	Segmented pillar layout for a high-voltage vertical transistor In one embodiment, a transistor fabricated on a semiconductor die includes a first section of transistor segments disposed in a first area of the semiconductor die, and a second section of...
23	7557006	Methods of forming field effect transistors A mass of material is formed over a semiconductor substrate. Semiconductive material is formed laterally proximate the mass of material. A space is provided laterally between the mass of material...
24	7553731	Method of manufacturing semiconductor device A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second...
25	7550791	Transistor and its method of manufacture An embodiment includes a transistor and a method of manufacturing the transistor that includes carbon nano-tubes. The physical behavior of the carbon nano-tubes, particularly a bending action that...
26	7550352	MOS transistor having a recessed gate electrode and fabrication method thereof A MOS transistor having a recessed gate electrode and a fabrication method thereof are provided. The MOS transistor includes an isolation layer formed at a predetermined region of a semiconductor...
27	7547585	P channel Rad Hard MOSFET with enhancement implant A P channel vertical conduction Rad Hard MOSFET has a plurality of closely spaced base strips which have respective sources to form invertible surface channels with the opposite sides of each of...
28	7544572	Multi-operational mode transistor with multiple-channel device structure A multiple operating mode transistor is provided in which multiple channels having different respective operational characteristics are employed. Multiple channels have threshold voltages that are...
29	7544570	Vertical-type metal insulator semiconductor field effect transistor device, and production method for manufacturing such transistor device In a vertical-type metal insulator field effect transistor device having a first conductivity type drain region layer, a plurality of second conductivity type base regions are produced and arranged...
30	7544558	Method for integrating DMOS into sub-micron CMOS process This invention is forming the DMOS channel after CMOS active layer before gate poly layer to make the modular DMOS process step easily adding into the sub-micron CMOS or BiCMOS process. And DMOS...
31	7544545	Trench polysilicon diode Embodiments of the present invention include a method of manufacturing a trench polysilicon diode. The method includes forming a N−(P−) type epitaxial region on a N+(P+) type substrate and...
32	7541640	Vertical field-effect transistor and method of forming the same A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a...
33	7541248	Integrated semiconductor device and method of manufacturing thereof An integrated semiconductor device containing semiconductor elements that have respective desired on-resistances and breakdown voltages achieves appropriate characteristics as a whole of the...
34	7528040	Methods of fabricating silicon carbide devices having smooth channels Methods of forming silicon carbide power devices are provided. An n − silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n...
35	7528027	Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel An SOI CMOS structure includes a v-shape trench in a pFet region. The v-shape trench has a surface in a (111) plane and extends into an SOI layer in the pFet region. A layer, such as a gate oxide...
36	7524726	Method for fabricating a semiconductor device A process for fabricating a power semiconductor device is disclosed.
37	7524725	Vertical transistor of semiconductor device and method for forming the same A vertical transistor of a semiconductor device and a method for forming the same are disclosed. The vertical transistor comprises a silicon fin disposed on a semiconductor substrate, a source...
38	7517758	Method of forming a vertical transistor The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising...
39	7514327	Electronically scannable multiplexing device An electronically scannable multiplexing device is capable of addressing multiple bits within a volatile or non-volatile memory cell. The multiplexing device generates an electronically scannable...
40	7514324	Selective epitaxy in vertical integrated circuit Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have...
41	7510954	Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines A memory array with staggered local data/bit lines extending generally in a first direction formed in an upper surface of a substrate and memory cell access transistors extending generally upward...
42	7510938	Semiconductor superjunction structure Semiconductor structures and methods are provided for a semiconductor device ( 54 - 11, 54 - 12 ) employing a superjunction structure ( 81 ). The method comprises, forming ( 52 - 6 ) first...
43	7501323	Power MOSFET and method for forming same using a self-aligned body implant A method for making a power MOSFET includes forming a trench in a semiconductor layer, forming a gate dielectric layer lining the trench, forming a gate conducting layer in a lower portion of the...
44	7498226	Method for fabricating semiconductor device with step gated asymmetric recess A method for fabricating a semiconductor device with a step gated asymmetric recess is provided. The method includes: forming an organic bottom anti-reflective coating (BARC) layer over a...
45	7494875	Gate etch process for a high-voltage FET A method, in one embodiment, includes etching first and second dielectric regions in a substantially isotropic manner through first and second openings of a mask layer to create first and second...
46	7491610	Fabrication method A process and an architecture related to a vertical MOSFET device and a capacitor for use in integrated circuits. The integrated circuit structure includes a semiconductor layer with a major...
47	7488651	Method of making vertical transistor structures having vertical-surrounding-gates with self-aligned features The present inventions include a vertical transistor formed by defining a channel length of the vertical-surrounding-gate field effect transistor with self-aligning features. The method provides...
48	7488650	Method of forming trench-gate electrode for FinFET device A FinFET device having a trench-gate electrode, and a method of manufacture, is provided. The trench-gate electrode may be fabricated by forming a mask layer on a substrate having a semiconductor...
49	7482285	Dual epitaxial layer for high voltage vertical conduction power MOSFET devices The epitaxial silicon junction receiving layer of a power semiconductor device is formed of upper and lower layers. The lower layer has a resistivity of more than that of the upper layer and a...
50	7482229	DRAM cells with vertical transistors The invention includes a semiconductor structure having U-shaped transistors formed by etching a semiconductor substrate. In an embodiment, the source/drain regions of the transistors are provided...

Matches 1 - 50 out of 591

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