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7618862 Flash memory device and method for manufacturing the same  
A method for manufacturing a flash memory device includes: a) forming a stack gate pattern composed of a tunnel oxide layer, a floating gate, ONO layers, and a control gate on a semiconductor...
7608884 Scalable split-gate flash memory cell with high source-coupling ratio  
A system and method provides an improved source-coupling ratio in flash memories. In one embodiment, a flash memory cell system with high source-coupling ratio includes at least a conventional...
7601594 Method for fabricating semiconductor memory  
A method for fabricating a semiconductor memory, the method including: forming an element isolation region in a concave portion of the semiconductor substrate; forming a layer of a gate electrode...
7601596 Semiconductor device with trench transistors and method for manufacturing such a device  
According to one embodiment, a method for manufacturing a semiconductor device includes forming trenches in a first side of a semiconductor material and forming a thick oxide layer on the trenches...
7601593 Flash memory with metal-insulator-metal tunneling program and erase  
The flash memory cell comprises a sense transistor that has a pair of source/drain lines and a control gate. A coupling metal-insulator-metal capacitor is created between the control gate and a...
7585731 Semiconductor integrated circuit device and its manufacturing method  
A method of manufacturing a semiconductor integrated circuit device is provided including providing a substrate with projecting island regions formed in stripes, with first regions of the substrate...
7585726 Nonvolatile semiconductor memory devices and the fabrication process of them  
The present invention enables to avoid a reduction in coupling ratio in a nonvolatile semiconductor memory device. The reduction is coupling ratio is caused due to difficulties in batch forming of...
7582527 Method for fabricating semiconductor device  
Method for fabricating a semiconductor device, including the steps of providing a first conductive type semiconductor substrate having a cell region and a logic region defined thereon, forming a...
7582550 Semiconductor memory device and manufacturing method thereof  
A semiconductor memory device includes: a semiconductor substrate; a first impurity region; a second impurity region; a channel region; a first gate formed on a main surface on a side of the first...
7579239 Method for the manufacture of a non-volatile memory device and memory device thus obtained  
The present invention relates to a method for processing of a non-volatile memory cell ( 50 ) which comprises a double gate stack and a single access gate. The method combines a way of processing...
7579243 Split gate memory cell method  
Split gate memory cell formation includes forming a sacrificial layer over a substrate. The sacrificial layer is patterned to form a sacrificial structure with a first sidewall and a second...
7579236 Nonvolatile memory device, method of fabricating and method of operating the same  
A nonvolatile memory device may include a semiconductor substrate; first and second floating gate electrodes formed on the semiconductor substrate; a control gate electrode formed on the first and...
7572702 Split gate type non-volatile memory device  
Embodiments relate to a gate structure of a split gate-type non-volatile memory device and a method of manufacturing the same. In embodiments, the split gate-type non-volatile memory device may...
7566615 Methods of fabricating scalable two transistor memory devices  
A memory device includes a semiconductor substrate, a first gate insulator on a first portion of a semiconductor substrate, a storage node on the first gate insulator, a tunnel junction barrier on...
7563673 Method of forming gate structure of semiconductor device  
Disclosed herein is a method for forming a gate structure of a semiconductor device. The method comprises forming a plurality of gates including a first gate dielectric film, a first gate...
7560320 Nonvolatile semiconductor memory and a fabrication method for the same  
A nonvolatile semiconductor memory includes a plurality of memory cell transistors configured with a first floating gate, a first control gate, and a first inter-gate insulating film each arranged...
7557005 Semiconductor device and a method of manufacturing the same  
In a semiconductor device which includes a split-gate type memory cell having a control gate and a memory gate, a low withstand voltage MISFET and a high withstand voltage MISFET, variations of the...
7550348 Source side injection storage device with spacer gates and method therefor  
A storage device structure ( 10 ) has two bits of storage per control gate ( 34 ) and uses source side injection (SSI) to provide lower programming current. A control gate ( 34 ) overlies a drain...
7550347 Methods of forming integrated circuit device gate structures  
Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions...
7547603 Non-planar non-volatile memory cell with an erase gate, an array therefor, and a method of making same  
A memory cell has a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The source region is formed...
7537988 Differential offset spacer  
A method of fabricating a CMOS integrated circuit includes the steps of providing a substrate having a semiconductor surface, forming a gate dielectric and a plurality of gate electrodes thereon in...
7537996 Self-aligned method of forming a semiconductor memory array of floating gate memory cells with buried source line and floating gate  
A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a trench formed into a surface of a semiconductor substrate, and spaced...
7528047 Self-aligned split gate memory cell and method of forming  
A method of forming a split gate memory device using a semiconductor layer includes patterning an insulating layer to leave a pillar thereof. A gate dielectric is formed over the semiconductor...
7517757 Non-volatile memory device having dual gate and method of forming the same  
A non-volatile memory device including a control gate pattern having a tunnel insulation pattern, a trap-insulation pattern, a blocking insulation pattern and a control gate electrode, which are...
7488649 Method of manufacturing split gate type non-volatile memory device  
A method of manufacturing a split gate type non-volatile memory device includes the steps of defining an active region on a semiconductor substrate; forming a pair of first conductive film...
7462539 Direct tunneling memory with separated transistor and tunnel areas  
A semiconductor device has: an isolation region formed on a semiconductor substrate and defining a continuous active region including a select transistor region and a direct tunnel element region;...
7439157 Isolation trenches for memory devices  
A method includes removing a portion of a substrate to define an isolation trench; forming a first dielectric layer on exposed surfaces of the substrate in the trench; forming a second dielectric...
7436020 Flash memory with metal-insulator-metal tunneling program and erase  
The flash memory cell comprises a sense transistor that has a pair of source/drain lines and a control gate. A coupling metal-insulator-metal capacitor is created between the control gate and a...
7435683 Apparatus and method for selectively recessing spacers on multi-gate devices  
Embodiments of an apparatus and methods for fabricating a spacer on one part of a multi-gate transistor without forming a spacer on another part of the multi-gate transistor are generally described...
7432159 Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same  
An EEPROM device includes a device isolation layer disposed at a predetermined region of a semiconductor substrate to define active regions, a pair of control gates crossing the device isolation...
7416945 Method for forming a split gate memory device  
A method forms a split gate memory device. A layer of select gate material over a substrate is patterned to form a first sidewall. A sacrificial spacer is formed adjacent to the first sidewall....
7378315 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device for a system on chip (SOC) for embodying a transistor for a logic device, an electrical erasable programmable read only memory (EEPROM) cell and a...
7371645 Method of manufacturing a field effect transistor device with recessed channel and corner gate device  
Fabrication of recessed channel array transistors (RCAT) with a corner gate device includes forming pockets between a semiconductor fin that includes a gate groove and neighboring shallow trench...
7368373 Method for manufacturing semiconductor devices and plug  
A method for manufacturing a semiconductor device is disclosed suitable for a substrate having a first conducting structure and a first dielectric layer, wherein the dielectric layer covers the...
7364970 Method of making a multi-bit non-volatile memory (NVM) cell and structure  
A multi-bit non volatile memory cell includes a first floating gate sidewall spacer structure and a second floating gate sidewall spacer structure physically separated from the first floating gate...
7361554 Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device  
Disclosed are a multi-bit non-volatile memory device, a method of operating the same, and a method of manufacturing the multi-bit non-volatile memory device. A unit cell of the multi-bit...
7354825 Methods and apparatus to form gates in semiconductor devices  
A method of formation a gate in a semiconductor device includes forming a gate oxide layer and a sacrificial layer on a semiconductor substrate. The sacrificial layer is then selectively etched to...
7341912 Split gate flash memory device having self-aligned control gate and method of manufacturing the same  
In a flash memory device, which can maintain an enhanced electric field between a control gate and a storage node (floating gate) and has a reduced cell size, and a method of manufacturing the...
7335558 Method of manufacturing NAND flash memory device  
A method of manufacturing a NAND flash memory device, including the steps of providing a semiconductor substrate in which a cell region and a select transistor region are defined; simultaneously...
7332396 Semiconductor device with recessed trench and method of fabricating the same  
A semiconductor device with a recessed channel and a method of fabricating the same are provided. The semiconductor device comprises a substrate, a gate, a source, a drain, and a reverse spacer....
7323357 Method for manufacturing a resistively switching memory cell and memory device based thereon  
The invention relates to a method for manufacturing at least one phase change memory cell. The method at least fabricating at least one first lamellar spacer of conductive material, which is...
7320913 Methods of forming split-gate non-volatile memory devices  
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased...
7315057 Split gate non-volatile memory devices and methods of forming same  
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased...
7312129 Method for producing two gates controlling the same channel  
A semiconductor process and apparatus use a predetermined sequence of patterning and etching steps to etch a gate stack ( 62 ) formed over a substrate ( 11 ) and a first spacer structure ( 42 ),...
7303960 Method for fabricating flash memory device  
A method for fabricating a flash memory device including the steps of: providing a substrate having thereon a gate with therein a control gate; lining the substrate and the gate with a liner;...
7276759 Non-volatile electrically alterable semiconductor memory with control and floating gates and side-wall coupling  
In a memory cell array, each memory cell includes a control gate disposed laterally adjacent a floating gate. The memory cells in each memory column are disposed inside a single well. The control...
7271065 Horizontal memory devices with vertical gates  
Structures and methods for memory devices are provided which operate with lower control gate voltages than conventional floating gate transistors, and which do not increase the costs or complexity...
7268040 Method of manufacturing a select transistor in a NAND flash memory  
Disclosed herein is a method of manufacturing a flash memory device. According to the present invention, a method of manufacturing a NAND flash memory device having a memory cell and a select...
7268042 Nonvolatile semiconductor memory and making method thereof  
A nonvolatile semiconductor memory device of a split gate structure having a gate of low resistance suitable to the arrangement of a memory cell array is provided. When being formed of a side wall...
7262093 Structure of a non-volatile memory cell and method of forming the same  
A flash memory cell is provided. The flash memory cell includes a substrate having a source and a drain formed therein, a bit line contact formed above the drain, a control gate formed above the...
Matches 1 - 50 out of 269 1 2 3 4 5 6 >