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7622343 Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same  
A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas...
7608509 Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layer  
In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region....
7605044 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device including at least one step of: forming a transistor on and/or over a semiconductor substrate; forming silicide on and/or overa gate electrode and a...
7598140 Method of producing a semiconductor device having an oxide film  
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the...
7592227 Methods of manufacturing a semiconductor device  
Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a...
7582530 Managing floating gate-to-floating gate spacing to support scalability  
Formation techniques are utilized to increase the space or distance between floating gates of a memory array of floating gate transistors. In at least some embodiments, floating gates are first...
7575967 Semiconductor integrated circuit device and a manufacturing method for the same  
In a manufacturing method for a semiconductor device, a first impurity diffusion layer for a low impurity concentration drain of a second conductivity type is formed within a semiconductor layer of...
7572697 Method of manufacturing flash memory device  
A method of manufacturing flash memory devices wherein, after gate lines are formed, an HDP oxide film having at least the same height as that of a floating gate is formed between the gate lines....
7563676 NOR-type flash memory cell array and method for manufacturing the same  
Disclosed is a non-volatile (e.g., NOR type flash) memory cell array and a method for manufacturing the same. The memory cell array includes a plurality of isolation layers on a semiconductor...
7563673 Method of forming gate structure of semiconductor device  
Disclosed herein is a method for forming a gate structure of a semiconductor device. The method comprises forming a plurality of gates including a first gate dielectric film, a first gate...
7560329 Semiconductor device and method for fabricating the same  
The semiconductor device comprises a gate electrode 112 formed over a semiconductor substrate 10 , a sidewall spacer 116 formed on the side wall of the gate electrode 112 , a sidewall spacer ...
7547601 Low power electrically alterable nonvolatile memory cells and arrays  
A method of providing a memory cell includes providing a body of a semiconductor material having a first conductivity type, arranging a filter of a conductor-filter system in contact with a first...
7521325 Semiconductor device and method for fabricating the same  
A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film ...
7518176 Programmable nonvolatile memory and semiconductor integrated circuit device  
Distance λm between a floating gate and a drain contact of a floating gate transistor forming a memory cell is set to be greater than a distance λ determined based on a minimum design dimension...
7510923 Slim spacer implementation to improve drive current  
Slim spacers are implemented in transistor fabrication. More particularly, wide sidewall spacers are initially formed and used to guide dopants into source/drain regions in a semiconductor...
7494874 Method of manufacturing a flash memory device  
A method of manufacturing a flash memory device includes the steps of forming a tunnel oxide layer and a polysilicon layer over a semiconductor substrate. An etch process is then performed to form...
7482660 Nonvolatile semiconductor memory with transistor whose gate electrode has bird's beak  
A nonvolatile semiconductor memory according to an example of the present invention is provided with a memory cell having a floating gate electrode and a control gate electrode, and a select gate...
7482226 Semiconductor memory device  
A drain ( 7 ) includes a lightly-doped shallow impurity region ( 7 a ) aligned with a control gate ( 5 ), and a heavily-doped deep impurity region ( 7 b ) aligned with a sidewall film ( 8 ) and...
7476583 Semiconductor device and method of manufacturing the same  
An insulating film provided below a floating gate electrode includes a first insulating film located at both end portions below the floating gate electrode, and a second insulating film sandwiched...
7456115 Method for forming semiconductor devices having reduced gate edge leakage current  
The present invention provides methods for forming semiconductor FET devices having reduced gate edge leakage current by using plasma or thermal nitridation and low-temperature plasma re-oxidation...
7452766 Finned memory cells and the fabrication thereof  
Methods and apparatus are provided. For an embodiment, a plurality fins is formed in a substrate so that the fins protrude from a substrate. After the plurality fins is formed, the fins are...
7439157 Isolation trenches for memory devices  
A method includes removing a portion of a substrate to define an isolation trench; forming a first dielectric layer on exposed surfaces of the substrate in the trench; forming a second dielectric...
7439131 Flash memory device having resistivity measurement pattern and method of forming the same  
A flash memory device has a resistivity measurement pattern and method of forming the same. A trench is formed in an isolation film in a Self-Aligned Floating Gate (SAFG) scheme. The trench is...
7439106 Gate CD trimming beyond photolithography  
A semiconductor device is fabricated with a selected critical dimension. A gate dielectric layer is formed over a semiconductor body. A gate layer comprised of a conductive material, such as...
7413953 Method of forming floating gate array of flash memory device  
The method of forming a floating gate array of a flash memory device includes: (a) sequentially forming a tunnel oxide film, a floating gate forming film, a capping oxide film and a first nitride...
7410869 Method of manufacturing a semiconductor device  
In a method of manufacturing a semiconductor device such as a flash memory device, an insulating pattern having an opening is formed to partially expose a surface of a substrate. A first silicon...
7402492 Method of manufacturing a memory device having improved erasing characteristics  
In a method of manufacturing a memory device having improved erasing characteristics, the method includes sequentially forming a tunneling oxide layer, a charge storing layer, and a blocking oxide...
7371645 Method of manufacturing a field effect transistor device with recessed channel and corner gate device  
Fabrication of recessed channel array transistors (RCAT) with a corner gate device includes forming pockets between a semiconductor fin that includes a gate groove and neighboring shallow trench...
7368348 Methods of forming MOS transistors having buried gate electrodes therein  
Methods of forming field effect transistors having buried gate electrodes include the steps of forming a semiconductor substrate having a sacrificial gate electrode buried beneath a surface of the...
7358139 Method of forming a field effect transistor including depositing and removing insulative material effective to expose transistor gate conductive material but not transistor gate semiconductor material  
The invention includes methods of forming field effect transistors. In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal...
7358130 Method for monitoring lateral encroachment of spacer process on a CD SEM  
A process implementing steps for determining encroachment of a spacer structure in a semiconductor device having thick and thin spacer regions, including a transition region formed therebetween....
7354824 Fabrication method of non-volatile memory  
A method for fabricating a non-volatile memory is provided. A dielectric layer, a first conductive layer, and a mask layer are formed sequentially on a substrate and then patterned to form a number...
7300842 Method of fabricating a mask ROM  
A mask ROM and fabrication method thereof are disclosed, in which a bit line is formed of a conductive material such as polysilicon, by which a device size can be minimized, and by which resistance...
7297598 Process for erase improvement in a non-volatile memory device  
A method of making embedded non-volatile memory devices includes forming a first mask layer overlying a polycrystalline silicon layer in a cell region and a peripheral region on a semiconductor...
7276403 Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays  
The present invention relates to use of selective oxidation to oxidize silicon in the presence of tungsten and/or tungsten nitride in memory cells and memory arrays. This technique is especially...
7250337 Method for fabricating a nonvolatile sonos memory device  
A nonvolatile memory device and a method for fabricating the same is disclosed, to prevent a “smiling” phenomenon in an ONO layer, thereby improving the programming and erasing characteristics,...
7247917 Nonvolatile semiconductor memory devices and methods of manufacturing the same  
Nonvolatile semiconductor memory devices and methods of manufacturing the same are disclosed. A disclosed nonvolatile semiconductor memory cell includes a semiconductor substrate; first and second...
7244642 Method to obtain fully silicided gate electrodes  
The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises depositing a protective layer ( 510 ) over a spacer material ( 415 ) located...
7232725 Split gate memory device and fabricating method thereof  
A split gate memory device and fabricating method thereof, wherein gate insulating and polysilicon layers are sequentially formed on a substrate. The polysilicon layer is patterned and a capping...
7226838 Methods for fabricating a semiconductor device  
Methods of fabricating a semiconductor device is disclosed. An illustrated method comprises: providing a substrate including an active region and a non-active region; forming a first gate electrode...
7217621 Self-aligned split-gate NAND flash memory and fabrication process  
Self-aligned split-gate NAND flash memory cell array and process of fabrication in which rows of self-aligned split-gate cells are formed between a bit line diffusion and a common source diffusion...
7208377 Silicon oxidation method  
A method for forming, by thermal oxidation, a silicon oxide layer on an integrated circuit including three-dimensional silicon patterns, includes implanting a first element according to a first...
7189618 Method of manufacturing a transistor of a semiconductor device  
Disclosed are a semiconductor device and a method of manufacturing the same. According to the present invention, the transistor of the semiconductor device comprises a stack type gate in which a...
7179709 Method of fabricating non-volatile memory device having local SONOS gate structure  
in methods of fabricating a non-volatile memory device having a local silicon-oxide-nitride-oxide-silicon (SONOS) gate structure, a semiconductor substrate having a cell transistor area, a high...
7166508 Method for forming nonvolatile memory device including insulating film containing nitrogen (nitride)  
A nonvolatile memory device has a plurality of nonvolatile memory cells in which a memory gate electrode is formed over a first semiconductor region with a gate insulating film and a gate nitride...
7163898 Method for manufacturing semiconductor integrated circuit structures  
A method for manufacturing circuit structures integrated in a semiconductor substrate that includes regions, in particular isolation regions, includes the steps of:—depositing a conductive layer...
7160776 Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same  
Methods of forming a gate structure of a non-volatile memory device include forming a gate pattern having a control gate on a semiconductor substrate. An oxidation-preventing layer is formed on the...
7157332 Method for manufacturing flash memory cell  
Disclosed is a method for manufacturing a flash memory cell. A structure in which a floating gate, an ONO dielectric film and a control gate are stacked is formed by means of a gate mask process...
7118969 Method of manufacturing a floating gate and method of manufacturing a non-volatile semiconductor memory device comprising the same  
A method of manufacturing a floating gate provides an enhancement for the efficiencies of electron charge and injection. First, a conductive pattern, constituting the floating gate is formed on a...
7118967 Protection of charge trapping dielectric flash memory devices from UV-induced charging in BEOL processing  
A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell including a charge trapping...
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