Patents in Class 438/264

Matches 1 - 50 out of 652

Match	Document	Document Title
1	7635628	Nonvolatile memory device and method of manufacturing the same The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate...
2	7635629	Method of manufacturing non-volatile memory device A method of manufacturing a non-volatile memory device includes forming a conductive layer to form a gate on a semiconductor substrate; forming a hard mask over the conductive layer; patterning the...
3	7625797	Embedded NV memory and method of manufacturing the same Disclosed in a non-volatile (NV) memory device and a method of manufacturing the same. The method includes forming transistor and EEPROM regions by implanting first and second conductive impurity...
4	7618862	Flash memory device and method for manufacturing the same A method for manufacturing a flash memory device includes: a) forming a stack gate pattern composed of a tunnel oxide layer, a floating gate, ONO layers, and a control gate on a semiconductor...
5	7618863	Method of fabricating flash memory device with increased coupling ratio A method of fabricating a flash memory which increases a coupling ratio between a floating gate and a control gate in a cell. The method comprises sequentially forming a tunnel oxide film, and...
6	7615818	Semiconductor device and method of manufacturing the same The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate,...
7	7615446	Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor...
8	7615445	Methods of reducing coupling between floating gates in nonvolatile memory A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected...
9	7612401	Non-volatile memory cell A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film...
10	7605419	Flash memory device and fabricating method thereof A flash memory device includes a floating gate formed on a substrate, sidewall gates formed on sidewalls of the floating gate, an interlayer insulating layer formed the floating gate and the...
11	7605036	Method of forming floating gate array of flash memory device The method of forming a floating gate array of a flash memory device includes: (a) forming a plurality of device isolations, which define active device regions, in a semiconductor substrate, the...
12	7598140	Method of producing a semiconductor device having an oxide film A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the...
13	7595240	Flash memory device with stacked dielectric structure including zirconium oxide and method for fabricating the same A dielectric structure disposed between a floating gate and a control gate of a flash memory device includes: a first dielectric layer; a third dielectric layer having a k-dielectric constant...
14	7592224	Method of fabricating a storage device including decontinuous storage elements within and between trenches A semiconductor storage cell includes a first source/drain region underlying a first trench defined in a semiconductor layer. A second source/drain region underlies a second trench in the...
15	7592222	Method of fabricating flash memory device The present invention relates to a method of fabricating a flash memory device. According to a method of fabricating a flash memory device in accordance with an aspect of the present invention, a...
16	7592226	Method for manufacturing non-volatile semiconductor memory device, and non-volatile semiconductor memory device An isolation oxide film whose upper surface is higher than a surface of a substrate is formed in the substrate. A silicon oxide film is formed on the substrate between the isolation oxide films. A...
17	7592225	Methods of forming spacer patterns using assist layer for high density semiconductor devices High density semiconductor devices and methods of fabricating the same are provided. Spacer fabrication techniques are utilized to form circuit elements having reduced feature sizes, which in some...
18	7588983	EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same Provided are an EEPROM cell, an EEPROM device, and methods of manufacturing the EEPROM cell and the EEPROM device. The EEPROM cell is formed on a substrate including a first region and a second...
19	7585730	Method of fabricating a non-volatile memory device A method of fabricating a non-volatile memory device includes forming a tunneling layer and a conductive layer on a semiconductor substrate, and patterning the conductive layer, the tunneling...
20	7585729	Method of manufacturing a non-volatile memory device A method of manufacturing a non-volatile memory device, includes forming a tunnel isolation layer comprising an oxynitride on a substrate by a simultaneous oxidation and nitridation treatment in...
21	7585755	Method of fabricating non-volatile memory device A method of fabricating a non-volatile memory device according to example embodiments may include forming a semiconductor layer on a substrate. A plurality of lower charge storing layers may be...
22	7579237	Nonvolatile memory device and method of manufacturing the same A method of manufacturing a nonvolatile memory device includes forming a plurality of device isolation regions in a semiconductor substrate, forming a tunneling insulation layer on the...
23	7579241	Semiconductor device and method of manufacture thereof A semiconductor device comprises a semiconductor substrate, an electrically rewritable semiconductor memory cell provided on the semiconductor substrate, the memory cell comprising an island...
24	7579242	High performance multi-level non-volatile memory device Non-volatile memory devices and arrays are described that utilize band engineered gate-stacks and multiple charge trapping layers allowing a multiple trapping site gate-insulator stack memory cell...
25	7572695	Hafnium titanium oxide films Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of...
26	7563674	Method of manufacturing NAND flash memory device A method of manufacturing a NAND flash memory device, wherein isolation layers are formed in a semiconductor substrate, and an upper side of each of the isolation layers is made to have a negative...
27	7560341	Semiconductor device and manufacturing method therefor The gate electrode of a high-voltage transistor having a high breakdown voltage is formed from a polysilicon layer having a larger average grain size, so that depletion of the gate electrode easily...
28	7553721	Flash memory devices and methods of fabricating the same Flash memory devices and methods for fabricating the same. In one example embodiment, a method of fabricating a flash memory includes various acts. First, a tunnel oxide layer is formed on an...
29	7553720	Non-volatile memory device and fabrication method thereof A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first...
30	7544991	Non-volatile memory device and methods of manufacturing and operating the same A non-volatile memory device and methods of manufacturing and operating the same are provided. In a method of manufacturing a non-volatile memory device, a substrate having a stepped portion that...
31	7544569	Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second...
32	7544613	Method of manufacturing semiconductor device with an improved wiring layer structure A method of manufacturing a semiconductor device including word lines of memory cells and a pair of select gate lines. A first insulating film, a first conductive film, a second insulating film,...
33	7541243	Methods of forming integrated circuit devices having gate electrodes formed on non-uniformly thick gate insulating layers Methods of forming an integrated circuit device include forming first and second device isolation regions at side-by-side locations within a semiconductor substrate to thereby define a...
34	7541233	Semiconductor device and method of manufacturing the same A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film...
35	7531411	Apparatus and method for a non-volatile memory structure comprising a multi-layer silicon-rich, silicon nitride trapping layer A non-volatile memory structure comprises a trapping layer that includes a plurality of silicon-rich, silicon nitride layers. Each of the plurality of silicon-rich, silicon nitride layers can trap...
36	7528038	Non-volatile two-transistor semiconductor memory cell and method for producing the same The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region ( 7 ), a drain region ( 8 ) and a channel region lying in between being...
37	7528027	Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel An SOI CMOS structure includes a v-shape trench in a pFet region. The v-shape trench has a surface in a (111) plane and extends into an SOI layer in the pFet region. A layer, such as a gate oxide...
38	7521316	Methods of forming gate structures for semiconductor devices Methods of forming a semiconductor device may include forming a tunnel oxide layer on a semiconductor substrate, forming a gate structure on the tunnel oxide layer, forming a leakage barrier oxide,...
39	7521320	Flash memory device and method of manufacturing the same A flash memory device and a method of manufacturing the same, the flash memory device includes isolation layers formed in an isolation region of a semiconductor substrate, an auxiliary oxide layer...
40	7521321	Method of fabricating a non-volatile semiconductor memory device The present invention relates to a memory device and a method of fabricating the same. The memory device comprises a substrate, a tunnel dielectric film on the substrate, pairs of source and drain...
41	7518176	Programmable nonvolatile memory and semiconductor integrated circuit device Distance λm between a floating gate and a drain contact of a floating gate transistor forming a memory cell is set to be greater than a distance λ determined based on a minimum design dimension...
42	7514311	Method of manufacturing a SONOS memory A method of manufacturing a silicon-oxide-nitride-oxide-silicon (SONOS) memory is provided herein. In the method, a bottom silicon oxide layer is formed over a substrate. A patterned mask layer...
43	7510943	Semiconductor devices and methods of manufacture thereof A first gate dielectric of a first transistor is disposed over a workpiece in a first region, and a second gate dielectric of a second transistor is disposed over the workpiece in a second region....
44	7511334	Twin-ONO-type SONOS memory A twin-ONO-type SONOS memory includes a semiconductor substrate having a source region, a drain region and a channel region between the source and drain regions, twin silicon oxide-silicon...
45	7507627	Method of fabricating nonvolatile memory device In one embodiment, a nonvolatile memory device can be fabricated by forming first metallic dots on a charge storage film using first source gas, forming substitution dots on the charge storage film...
46	7501680	Memory device having nanocrystals in memory cell The memory device includes a source region and a drain region in a substrate and spaced apart from each other; a memory cell formed on a surface of the substrate, wherein the memory cell connects...
47	7498224	Strained silicon forming method with reduction of threading dislocation density A method for growing strained Si layer and relaxed SiGe layer with multiple Ge quantum dots (QDs) on a substrate is disclosed. The method can reduce threading dislocation density, decrease surface...
48	7494869	Semiconductor integrated circuit device and manufacturing method thereof A manufacturing method of a semiconductor integrated circuit device is disclosed. A gate insulating film is formed on a semiconductor substrate. A first film used as floating gates is formed on the...
49	7494868	Methods of fabricating flash memory devices having a sloped trench isolation structure A method of fabricating a flash memory device. Parallel mask patterns are formed on a substrate. The substrate is etched using the mask patterns to form trenches. An insulating layer pattern is...
50	7485513	One-device non-volatile random access memory cell One aspect of the present subject matter relates to a one-device non-volatile memory cell. The memory cell includes a body region, a first diffusion region and a second diffusion region formed in...

Matches 1 - 50 out of 652

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