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7619275 Process for forming an electronic device including discontinuous storage elements  
A process for forming an electronic device can include forming a trench within a substrate, wherein the trench includes a wall and a bottom. The process can also include including forming a portion...
7618864 Nonvolatile memory device and methods of forming the same  
Example embodiments relate to a semiconductor memory device and methods of forming the same. Other example embodiments relate to a nonvolatile memory device and methods of forming the same. The...
7618862 Flash memory device and method for manufacturing the same  
A method for manufacturing a flash memory device includes: a) forming a stack gate pattern composed of a tunnel oxide layer, a floating gate, ONO layers, and a control gate on a semiconductor...
7615450 Method of manufacturing flash memory device  
Disclosed herein is a method of fabricating a flash memory device. The method includes providing a semiconductor substrate that includes an active region and a field region. A tunnel insulating...
7615438 Lanthanide yttrium aluminum oxide dielectric films  
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The...
7608885 Flash memory device and method of manufacturing the same  
A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO 2 /Al 2 O 3 /ZrO 2 ...
7598140 Method of producing a semiconductor device having an oxide film  
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the...
7595237 Non-volatile memory cell with a hybrid access transistor  
A non-volatile memory cell includes an access and a storage transistor coupled in series. The memory cell is formed on a thin gate well tailored for transistors with thin gate dielectrics. The...
7592225 Methods of forming spacer patterns using assist layer for high density semiconductor devices  
High density semiconductor devices and methods of fabricating the same are provided. Spacer fabrication techniques are utilized to form circuit elements having reduced feature sizes, which in some...
7592222 Method of fabricating flash memory device  
The present invention relates to a method of fabricating a flash memory device. According to a method of fabricating a flash memory device in accordance with an aspect of the present invention, a...
7589373 Semiconductor device  
The present invention provides a semiconductor device, which includes a substrate and a sensing memory device. The substrate includes a metal-oxide-semiconductor transistor having a gate. The...
7588989 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same  
A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric...
7585729 Method of manufacturing a non-volatile memory device  
A method of manufacturing a non-volatile memory device, includes forming a tunnel isolation layer comprising an oxynitride on a substrate by a simultaneous oxidation and nitridation treatment in...
7585728 Methods of programming memory cells using manipulation of oxygen vacancies  
One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control...
7582924 Semiconductor devices having polymetal gate electrodes  
Semiconductor devices and methods of fabricating the same are provided. A gate insulating film is provided on a semiconductor substrate. A polymetal gate electrode is provided on the gate...
7582526 Method for manufacturing semiconductor device  
A method for manufacturing a plurality of memory devices and a plurality of high voltage devices on a substrate are provided. The substrate has a memory region and a high voltage region. The method...
7575978 Method for making conductive nanoparticle charge storage element  
Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge storage units in electronic structures for use in a wide...
7572699 Process of forming an electronic device including fins and discontinuous storage elements  
An electronic device can include a substrate including a fin lying between a first trench and a second trench, wherein the fin is no more than approximately 90 nm wide. The electronic device can...
7566618 Non-volatile memory device having SONOS structure and manufacturing method thereof  
A non-volatile memory device having a SONOS structure and a manufacturing method thereof, where a conductive layer is formed between a charge trap layer and a blocking insulation layer of the SONOS...
7566617 Method for manufacturing semiconductor elemental device forming an amorphous high dielectric film and an amorphous silicon film  
A base substrate is first prepared, and a high dielectric amorphous film composed of a high permittivity material is formed over the base substrate. Next, an amorphous silicon film is formed over...
7564094 Non-volatile memory devices and methods of manufacturing the same  
Non-volatile memory devices include a tunnel insulating layer on a channel region of a substrate, a charge-trapping layer pattern on the tunnel insulating layer and a first blocking layer pattern...
7560341 Semiconductor device and manufacturing method therefor  
The gate electrode of a high-voltage transistor having a high breakdown voltage is formed from a polysilicon layer having a larger average grain size, so that depletion of the gate electrode easily...
7553724 Method for manufacturing code address memory cell by which a stack insulating film of an oxide film and a nitride film used as a dielectric film in a flash memory is used as a gate oxide film  
The present invention relates to a method manufacturing a code address memory (CAM) cell. The present invention uses a dielectric film in which an oxide film and a nitride film between a floating...
7550801 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device includes a tunnel insulating film, a floating gate electrode, an inter-electrode insulating film, and a control gate electrode. The tunnel insulating film...
7550349 Method for forming gate dielectric layers  
A method for forming gate dielectric layers having different thicknesses is provided, The method includes forming a lower oxide layer, a nitride layer, and an upper oxide layer on a semiconductor...
7547601 Low power electrically alterable nonvolatile memory cells and arrays  
A method of providing a memory cell includes providing a body of a semiconductor material having a first conductivity type, arranging a filter of a conductor-filter system in contact with a first...
7544569 Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing  
A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second...
7534681 Memory device fabrication  
The invention provides methods of fabricating memory devices. One embodiment forms a bulk insulation layer overlying a plurality of source/drain regions formed in a substrate, removes a cap layer...
7531868 Non-volatile semiconductor memory device  
In a non-volatile semiconductor memory device typically of a MONOS type storing data by trapping charge in a multilayer film composed of a plurality of insulating films, which includes: source and...
7531404 Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer  
A method of forming a transistor gate stack having an annealed gate dielectric layer begins by providing a substrate that includes a first and second spacer separated by a trench. A conformal...
7528037 Flash memory having a high-permittivity tunnel dielectric  
A high permittivity tunneling dielectric is used in a flash memory cell to provide greater tunneling current into the floating gate with smaller gate voltages. The flash memory cell has a substrate...
7521325 Semiconductor device and method for fabricating the same  
A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film ...
7521263 Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device  
A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a...
7518176 Programmable nonvolatile memory and semiconductor integrated circuit device  
Distance λm between a floating gate and a drain contact of a floating gate transistor forming a memory cell is set to be greater than a distance λ determined based on a minimum design dimension...
7517757 Non-volatile memory device having dual gate and method of forming the same  
A non-volatile memory device including a control gate pattern having a tunnel insulation pattern, a trap-insulation pattern, a blocking insulation pattern and a control gate electrode, which are...
7517750 Flash memory devices having multilayered inter-gate dielectric layers including metal oxide layers and methods of manufacturing the same  
Embodiments of the present invention provide methods of manufacturing memory devices including forming floating gate patterns on a semiconductor substrate having active regions thereon, wherein the...
7511334 Twin-ONO-type SONOS memory  
A twin-ONO-type SONOS memory includes a semiconductor substrate having a source region, a drain region and a channel region between the source and drain regions, twin silicon oxide-silicon...
7510935 Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor device  
In an embodiment, a method of manufacturing a charge-trapping dielectric and a silicon-oxide-nitride-oxide-silicon (SONOS)-type non-volatile semiconductor device includes forming the...
7507652 Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure  
Some methods that are provided form a composite dielectric structure on a substrate. A first dielectric layer that includes metal and oxygen is formed on a substrate. A preliminary dielectric layer...
7507644 Method of forming dielectric layer of flash memory device  
A method of manufacturing a flash memory device, wherein according to one embodiment, when a high dielectric material is formed by a remote plasma atomic layer deposition method, first and second...
7507629 Semiconductor devices having an interfacial dielectric layer and related methods  
A semiconductor device includes a semiconductor substrate including silicon and an oxide layer on the substrate. The oxide layer includes silicon. An interfacial dielectric layer is disposed on the...
7507627 Method of fabricating nonvolatile memory device  
In one embodiment, a nonvolatile memory device can be fabricated by forming first metallic dots on a charge storage film using first source gas, forming substitution dots on the charge storage film...
7507626 Floating gate of flash memory device and method of forming the same  
Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex...
7501680 Memory device having nanocrystals in memory cell  
The memory device includes a source region and a drain region in a substrate and spaced apart from each other; a memory cell formed on a surface of the substrate, wherein the memory cell connects...
7498227 Method for manufacturing a non-volatile memory device  
An increase of charge storing capacity, prevention of an over-erase, and a reduction of ΔVth may be achieved when a 2-bit/cell non-volatile memory device includes a gate of a predetermined width...
7498223 Semiconductor devices having improved field plates  
A field effect transistor device and method, such device having source and drain electrodes in ohmic contact a semiconductor. A gate electrode-field plate structure is disposed between the source...
7498222 Enhanced etching of a high dielectric constant layer  
A high K layer, such as aluminum oxide or hafnium oxide, may be formed with a deposition process that uses an ion implantation to damage portions of the high K material that are to be later etched....
7488645 Method of fabricating a non-volatile memory  
A non-volatile memory and a method of fabricating the same are described. First, a substrate is provided. Then, a plurality of stack structures is formed on the substrate. Each stack structure...
7485533 Fabrication method of an non-volatile memory  
A non-volatile memory cell is provided. The non-volatile memory includes a substrate, a gate stacked layer, an isolation layer and a conductive layer. The gate stacked layer includes a tunneling...
7482623 Organic semiconductor film and organic semiconductor device  
An organic semiconductor device includes a substrate, a gate electrode formed directly on the substrate , gate insulating film formed directly on the gate electrode, a source electrode and a drain...
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