Patents in Class 438/259

Matches 1 - 50 out of 775

Match	Document	Document Title
1	8183613	Bipolar transistor for a memory array A memory device includes an insulation layer, an active pattern, a gate insulation layer and a gate electrode. The insulation layer is formed on a substrate. The active pattern is formed on the...
2	8183111	Method of fabricating conductive electrodes on the front and backside of a thin film structure A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of...
3	8178406	Split gate device and method for forming A method of making a semiconductor device on a semiconductor layer includes forming a select gate, a recess, a charge storage layer, and a control gate. The select gate is formed have a first...
4	8178405	Resistor random access memory cell device A memory cell device has a bottom electrode and a top electrode, a plug of memory material in contact with the bottom electrode, and a cup-shaped conductive member having a rim that contacts the...
5	8178407	Systems and methods for a high density, compact memory array A memory array comprising vertical memory cells does not require any isolation layers between cells. Thus, a very compact, high density memory array can be achieved. Each memory cell in the memory...
6	8178408	Methods of manufacturing charge trap-type non-volatile memory devices Some methods are directed to manufacturing charge trap-type non-volatile memory devices. An isolation layer pattern can be formed that extends in a first direction in a substrate. A recess unit is...
7	8173508	Semiconductor device having vertical type MOSFET and manufacturing method thereof A method (and resultant structure) includes forming a semiconductor layer having plural stripe-like trenches, forming a gate electrode buried partially in each of the plural trenches, and...
8	8173509	Semiconductor device and method for manufacturing the same A type semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first...
9	8173505	Method of making a split gate memory cell A method includes forming a first layer of gate material over a semiconductor substrate; forming a hard mask layer over the first layer; forming an opening; forming a charge storage layer over the...
10	8173506	Method of forming buried gate electrode utilizing formation of conformal gate oxide and gate electrode layers A method of forming a buried gate electrode prevents voids from being formed in a silicide layer of the gate electrode. The method begins by forming a trench in a semiconductor substrate, forming a...
11	8168999	Semiconductor device having IGBT and diode A semiconductor device includes: a substrate; an active element cell area including IGBT cell region and a diode cell region; a first semiconductor region on a first side of the substrate in the...
12	8168494	Trench MOS transistor and method of manufacturing the same Trench portions (10) are formed in a well (5) in order to provide unevenness in the well (5). A gate electrode (2) is formed via an insulating film (7) on the upper surface and inside of the trench...
13	8163617	Vertical channel type non-volatile memory device and method for fabricating the same A method for fabricating a vertical channel type non-volatile memory device including forming a source region, alternately forming a plurality of interlayer dielectric layers and a plurality of...
14	8163614	Method for forming NAND typed memory device A method for fabricating a NAND type flash memory device includes defining a select transistor region and a memory cell region in a semiconductor substrate, forming a tunnel insulating layer, a...
15	8159025	Gate electrode in a trench for power MOS transistors A trench-typed power MOS transistor comprises a trench-typed gate area, which includes a gate conductor and an isolation layer. A thin sidewall region of the isolation layer is formed between the...
16	8153489	Method for fabricating semiconductor device with buried gates A method for fabricating a semiconductor device, including forming a trench by etching a semiconductor substrate, forming a gate insulation layer over a surface of the trench, forming a gate...
17	8148767	Semiconductor memory devices including recess-type control gate electrodes and methods of fabricating the semiconductor memory devices A semiconductor memory device includes a semiconductor substrate, a control gate electrode recessed in the semiconductor substrate, a storage node layer interposed between a sidewall of the control...
18	8148758	High voltage semiconductor device with JFET regions containing dielectrically isolated junctions and method of fabricating the same A high-voltage field-effect device contains an extended drain or “drift” region including an embedded stack of JFET regions separated by intervening layers of the drift region. Each of the JFET reg...
19	8143125	Structure and method for forming a salicide on the gate electrode of a trench-gate FET A method for forming a trench-gate FET includes the following steps. A plurality of trenches is formed extending into a semiconductor region. A gate dielectric is formed extending along opposing...
20	8143123	Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices A method for forming power semiconductor devices having an inter-electrode dielectric (IPD) layer inside a trench includes providing a semiconductor substrate with a trench, lining the sidewalls...
21	8138077	Flash memory device and method of fabricating the same A flash memory device includes an isolation layer formed on an isolation region of a semiconductor substrate, a tunnel insulating layer formed on an active region of the semiconductor substrate, a...
22	8134199	Nonvolatile semiconductor memory A nonvolatile semiconductor memory fabrication method including forming a first insulating film and a floating gate electrode material on a semiconductor substrate; forming a gate insulating film...
23	8129238	Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same A semiconductor device having a dual trench and methods of fabricating the same, a semiconductor module, an electronic circuit board, and an electronic system are provided. The semiconductor device...
24	8129241	Method for forming a shielded gate trench FET A method for forming a shielded gate field effect transistor (FET) includes forming a plurality of trenches in a semiconductor region and forming a shield electrode in a bottom portion of each...
25	8120085	Semiconductor device and method for manufacturing the same A semiconductor device includes: a channel region extending substantially perpendicular to a main surface of a semiconductor substrate; a first diffusion layer provided on a bottom of the channel...
26	8120100	Overlapping trench gate semiconductor device An overlapping trench gate semiconductor device includes a semiconductor substrate, a plurality of shallow trenches disposed on the semiconductor substrate, a first conductive layer disposed in the...
27	8120075	Semiconductor device with improved trenches A semiconductor device exhibiting enhanced carrier mobility within a channel region of the semiconductor device is disclosed. The semiconductor device includes a gate stack having first and second...
28	8119482	MOSFET using gate work function engineering for switching applications This invention discloses a new MOSFET device. The MOSFET device has an improved operation characteristic achieved by manufacturing a MOSFET with a higher gate work function by implementing a...
29	8120101	Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistors The invention includes a transistor device having a semiconductor substrate with an upper surface. A pair of source/drain regions are formed within the semiconductor substrate and a channel region...
30	8120083	Polymer-based ferroelectric memory Apparatus and systems may comprise electrode structures that include two or more dissimilar and abutting metal layers on a surface, some of the electrode structures separated by a gap; and a...
31	8097509	Method for manufacturing semiconductor device with a recessed channel A semiconductor device having a recessed channel and a method for manufacturing the same. The semiconductor device comprises a semiconductor substrate formed with an isolation layer defining an...
32	8093125	Manufacturing method of capacitor in semiconductor device Example embodiment is provided to a method for manufacturing a semiconductor device, including forming a hard mask layer on a buried bit line and forming a storage node contact hole by using the...
33	8089123	Semiconductor device comprising transistor structures and methods for forming same A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the...
34	8088660	Method for producing a plug in a semiconductor body A method for producing an electrode in a semiconductor layer includes providing a substrate with a first surface and a second surface, forming a first trench having sidewalls and extending into the...
35	8084326	Method for manufacturing semiconductor device The present invention relates to a method for manufacturing a semiconductor device, and provides to reduce a contact resistance of a landing plug by forming the landing plug in such a manner that a...
36	8084325	Semiconductor device and method for fabricating the same A semiconductor device can prevent exposure of an inner wall of a recess pattern caused by misalignment between masks. A gate electrode is formed inside the recess pattern so that only a gate hard...
37	8084320	Non-volatile memory and method for fabricating the same A non-volatile memory is described, which includes gate structures, doped regions, second spacers and contact plugs. The gate structures are disposed on the substrate, each of which includes a...
38	8080459	Self aligned contact in a semiconductor device and method of fabricating the same A method of fabricating a self-aligned contact in a semiconductor device, in accordance with one embodiment of the present invention, includes etching a trench in a core area and partially...
39	8080457	Fabrication method of power semiconductor structure with low gate charge A fabrication method of a trenched power semiconductor structure with low gate charge is provided. Firstly, a substrate is provided. Then, a gate trench is formed in the substrate. Afterward, a...
40	8076203	Semiconductor device and method of manufacturing the same A polysilicon film is formed all over a surface of a semiconductor substrate, then is subject to a CMP process through a mask pattern as a stopper. Then, a metal film is formed all over the...
41	8071445	Method for manufacturing semiconductor device, and semiconductor device In a transistor region, a source interconnect layer and a gate electrode are buried in trenches. A source extending region is provided adjacent to the transistor region or in the transistor region,...
42	8072024	Nonvolatile semiconductor memory device and method for manufacturing same A nonvolatile semiconductor memory device with a substrate. A plurality of dielectric films and electrode films are alternately stacked on the substrate and have a through hole penetrating in the...
43	8071412	Method of fabricating micro-electromechanical system microphone structure A method of fabricating a micro-electromechanical system microphone structure is disclosed. First, a substrate defining a MEMS region and a logic region is provided, and a surface of the substrate...
44	8072036	Micro-electromechanical system microphone structure A method of fabricating a micro-electromechanical system microphone structure is disclosed. First, a substrate defining a MEMS region and a logic region is provided, and a surface of the substrate...
45	8058140	Thickened sidewall dielectric for memory cell Methods and devices are disclosed, such as those involving memory cell devices with improved charge retention characteristics. In one or more embodiments, a memory cell is provided having an active...
46	8058119	Device scheme of HKMG gate-last process The present disclosure provides a method for making metal gate stacks of a semiconductor device. The method includes forming a high k dielectric material layer on a semiconductor substrate; forming...
47	8053313	Semiconductor device and method of fabricating the same In a method of fabricating a semiconductor device on a substrate having a pillar pattern, a gate electrode is formed on the pillar pattern without etching the latter. A conductive pattern is filled...
48	8053286	Method of forming semiconductor device including trench gate structure A method of forming a semiconductor device is provided, which may include, but is not limited to, the following processes. Grooves may be formed in an insulating region and in a semiconductor...
49	8048739	Method of manufacturing flash memory device According to yet another embodiment, a method for forming a non-volatile memory device includes etching a substrate to form first and second trenches. The first and second trenches are filled with...
50	8043913	Method of forming trench-gate field effect transistors A method of forming a field effect transistor includes: forming a trench in a semiconductor region; forming a shield electrode in the trench; performing an angled sidewall implant of impurities of...

Matches 1 - 50 out of 775

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