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9041057 Field effect transistor device with shaped conduction channel  
A field effect transistor device includes a substrate, a silicon germanium (SiGe) layer disposed on the substrate, gate dielectric layer lining a surface of a cavity defined by the substrate and...
9034712 Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage  
A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high...
9029235 Trench isolation MOS P-N junction diode device and method for manufacturing the same  
A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of...
9029215 Method of making an insulated gate semiconductor device having a shield electrode structure  
In one embodiment, a method for forming a semiconductor device includes forming trench and a dielectric layer along surfaces of the trench. A shield electrode is formed in a lower portion of the...
9029932 Programmable device with improved coupling ratio through trench capacitor and lightly doped drain formation  
A programmable device and a method of manufacturing the same are provided. A programmable device comprises a substrate having a source region, a drain region and a diffusion region adjacent to the...
9024377 Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof  
A semiconductor device capable of reducing influences of adjacent word lines is provided in the present invention. The semiconductor device includes: a substrate, and a word line disposed in the...
9006053 Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching  
Method for fabricating MOSFET integrated with Schottky diode (MOSFET/SKY) is disclosed. Gate trench is formed in an epitaxial layer overlaying semiconductor substrate, gate material is deposited...
8999769 Integration of high voltage trench transistor with low voltage CMOS transistor  
A method of forming a device is disclosed. A substrate defined with a device region is provided. A gate having an upper and a lower portion is formed in a trench in the substrate in the device...
8999783 Method for producing a semiconductor device with a vertical dielectric layer  
A method for producing a semiconductor device is disclosed. The method includes providing a semiconductor body having a first surface, and a second surface opposite the first surface, producing a...
8993391 Semiconductor device with recess gate and method for fabricating the same  
A method for fabricating a semiconductor device includes forming a conductive layer over first and second regions of a semiconductor substrate, forming a trench extended in the first region of the...
8994101 Shielded gate trench MOS with improved source pickup layout  
A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and...
8980713 Method for fabricating a metal high-k gate stack for a buried recessed access device  
A method for fabricated a buried recessed access device comprising etching a plurality of gate trenches in a substrate, implanting and activating a source/drain region in the substrate, depositing...
8981384 Semiconductor device and method for manufacturing same  
There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes a substrate...
8969940 Method of gate strapping in split-gate memory cell with inlaid gate  
A process integration is disclosed for fabricating non-volatile memory (NVM) cells having patterned select gates (211, 213), charge storage layers (219), inlaid control gates (223, 224), and...
8969955 Power MOSFET and methods for forming the same  
A device includes a trench extending into a semiconductor region and having a first conductivity type, and a conductive field plate in the trench. A first dielectric layer separates a bottom and...
8962455 Method of fabricating semiconductor device  
A method of fabricating a semiconductor device includes forming a first preliminary gate barrier layer and a first preliminary gate electrode recessed to have a first depth from the surface of the...
8955579 Plasma processing apparatus and plasma processing method  
There is provided a means for uniformly controlling the in-plane temperature of a semiconductor wafer at high speed in a high heat input etching process. A refrigerant channel structure in a...
8946908 Dual-metal self-aligned wires and vias  
Disclosed is a semiconductor structure which includes a semiconductor substrate and a wiring layer on the semiconductor substrate. The wiring layer includes a plurality of fin-like structures...
8946021 Nonvolatile semiconductor memory device and method for manufacturing the same  
On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon...
8940604 Nonvolatile memory comprising mini wells at a floating potential  
The disclosure relates to an integrated circuit comprising a nonvolatile memory on a semiconductor substrate. The integrated circuit comprises a doped isolation layer implanted in the depth of the...
8941090 Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same  
A resistive memory device capable of implementing a multi-level cell, a method of fabricating the same, and a memory apparatus and data processing system including the same are provided. The...
8940607 Manufacturing method of trench type power transistor device with super junction  
The present invention provides a manufacturing method of a trench type power transistor device with a super junction. First, a substrate of a first conductivity type is provided, and then an...
8932924 Trench-based power semiconductor devices with increased breakdown voltage characteristics  
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
8928070 Trench type power transistor device with super junction  
The present invention provides a manufacturing method of a trench type power transistor device with a super junction. First, a substrate of a first conductivity type is provided, and then an...
8928072 Semiconductor device  
Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region...
8927368 Method for manufacturing silicon carbide semiconductor device  
A trench having a side wall and a bottom portion is formed in a silicon carbide substrate. A trench insulating film is formed to cover the bottom portion and the side wall. A silicon film is...
8921136 Self aligned contact formation  
The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality...
8916470 Method of manufacturing sidewall spacers on a memory device  
The present invention relates to a method of manufacturing sidewall spacers on a memory device. The method comprises forming sidewall spacers on a memory device having a memory array region and at...
8907396 Source/drain zones with a delectric plug over an isolation region between active regions and methods  
Devices, memory arrays, and methods are disclosed. In an embodiment, one such device has a source/drain zone that has first and second active regions, and an isolation region and a dielectric plug...
8901632 Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodology  
A method of making a semiconductor structure includes forming a select gate over a substrate in an NVM region and a first protection layer over a logic region. A control gate and a storage layer...
8900947 Semiconductor devices including conductive plugs and methods of manufacturing the same  
Methods of manufacturing a semiconductor device are provided. The method includes forming an isolation region in a substrate to define active regions extending in a single direction and being...
8895388 Method of manufacturing a semiconductor device and a non-volatile semiconductor storage device including the formation of an insulating layer using a plasma treatment  
An object is to provide a technique for manufacturing an insulating layer with favorable withstand voltage. Another object is to provide a technique for manufacturing a semiconductor device having...
8895389 Semiconductor structures and fabrication method thereof  
A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate having a plurality of first doped regions and second doped regions; and...
8896060 Trench power MOSFET  
A device includes a semiconductor region of a first conductivity type, a trench extending into the semiconductor region, and a conductive field plate in the trench. A first dielectric layer...
8889513 Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination  
A power semiconductor power device having composite trench bottom oxide and multiple trench floating gates is disclosed. The gate charge is reduced by forming a pad oxide surrounding a HDP oxide...
8889532 Method of making an insulated gate semiconductor device and structure  
In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the...
8889539 Recess gate transistor  
A method of forming a semiconductor device is provided, comprising forming a plurality of hard masks on a substrate by patterning an insulating layer; forming a plurality of trenches in the...
8871583 Semiconductor device and manufacturing method thereof  
A non-planar JFET device having a thin fin structure is provided. A fin is formed projecting upwardly from or through a top surface of a substrate, where the fin has a first semiconductor layer...
8865547 Methods of fabricating a semiconductor device including fine patterns  
Methods of fabricating a semiconductor device are provided. The method includes forming active lines in a semiconductor substrate, forming contact lines generally crossing over the active lines,...
8859367 Gate constructions of recessed access devices and methods of forming gate constructions of recessed access devices  
A method of forming a gate construction of a recessed access device includes forming a pair of sidewall spacers laterally over opposing sidewalls of a gate dielectric and elevationally over first...
8859369 Semiconductor device and method of manufacturing the same  
Provided is a semiconductor device having a vertical MOS transistor and a method of manufacturing the same. The vertical MOS transistor has a trench gate, a distance between a gate electrode and...
8859365 Semiconductor device and method for manufacturing same  
According to one embodiment, a method for manufacturing a semiconductor device includes: forming a plurality of trenches; forming a gate insulating film; burying a gate electrode; burying an...
8853764 Integration of low Rdson LDMOS with high sheet resistance poly resistor  
A method for forming a low Rdson LDNMOS and a high sheet resistance poly resistor and the resulting device are provided. Embodiments include forming first, second, and third STI regions in a...
8853033 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device includes: sequentially forming an n− type epitaxial layer, a p type epitaxial layer, and a first n+ region on a first surface of an n+ type silicon...
8853695 Thin film transistor substrate including source-drain electrodes formed from a nitrogen-containing layer or an oxygen/nitrogen-containing layer  
A substrate supporting thin film transistors thereon, each including a semiconductor layer and source-drain electrodes, wherein the source-drain electrodes are formed from a nitrogen-containing...
8846469 Fabrication method of trenched power semiconductor device with source trench  
A fabrication method of a trenched power semiconductor device with source trench is provided. Firstly, at least two gate trenches are formed in a base. Then, a dielectric layer and a polysilicon...
8841183 Nonvolatile semiconductor memory device and method for manufacturing the same  
On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon...
8835294 Method for improving thermal stability of metal gate  
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure on the substrate, the gate structure...
8835254 Semiconductor device manufacturing method  
A method of forming a device in each of vertical trench gate MOSFET region and control lateral planar gate MOSFET region of a semiconductor substrate is disclosed. A trench is formed in the...
8829562 Semiconductor device including a dielectric structure in a trench  
A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a...