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7713820 Method for manufacturing non-volatile memory  
A method for manufacturing a non-volatile memory is provided. An isolation structure is formed in a trench formed in a substrate. A portion of the isolation structure is removed to form a recess....
7709324 Method for forming a gate within a trench including the use of a protective film  
Gate trenches 108 are formed in a memory cell region M using a silicon nitride film 103 as a mask in a state in which the semiconductor substrate 100 in a P-type peripheral circuit region P and an...
7704829 Method for fabricating nonvolatile memory device  
A nonvolatile memory device and method for fabricating the same are provided. The nonvolatile memory device includes an active region; a source region formed in the active region; a source line...
7704833 Method of forming abrupt source drain metal gate transistors  
A gate structure may be utilized as a mask to form source and drain regions. Then the gate structure may be removed to form a gap and spacers may be formed in the gap to define a trench. In the...
7704830 Split gate memory cell using sidewall spacers  
A self-aligned split gate bitcell includes first and second regions of charge storage material separated by a gap devoid of charge storage material. Spacers are formed along sidewalls of...
7704836 Method of fabricating super trench MOSFET including buried source electrode  
In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the...
7704834 Method for forming split gate flash nonvolatile memory devices  
Disclosed is a method for forming a non-volatile memory device, comprising the steps of: successively depositing a gate oxide and a floating gate material on a semiconductor substrate; depositing...
7701002 Semiconductor device having buried gate electrode and method of fabricating the same  
A semiconductor device includes an isolation layer disposed in a semiconductor device to define an active region. A gate trench is disposed across the active region and extends to the isolation...
7700998 Semiconductor device and method for manufacturing the same  
A type semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first...
7700437 Non-volatile memory device with buried control gate and method of fabricating the same  
In a non-volatile memory device with a buried control gate, the effective channel length of the control gate is increased to restrain punchthrough, and a region for storing charge is increased for...
7696043 Method of manufacturing a flash memory device  
A method of manufacturing a flash memory device includes the steps of forming trenches by forming a tunnel oxide layer and a conductive layer for a floating gate over a semiconductor substrate,...
7694888 Method for producing a chip card contact zone  
A method for producing a contact zone for a chip card has the following steps. A sheet having a first surface and a second surface opposite the first surface. Forming at least one insulating...
7696044 Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches  
In order to reduce the integrated circuit area that is occupied by an array of a given number of flash memory cells, floating gate charge storage elements are positioned along sidewalls of...
7692238 Field effect transistor and its manufacturing method  
The present invention is an object to provide a high-performance vertical field effect transistor having a microminiaturized structure in which the distance between the gate and the channel is...
7687852 Recess gate type transistor  
A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a...
7682903 Method of forming a power device  
A method of forming a power device includes providing a substrate, a semiconductor layer having at least a trench and being disposed on the substrate, a gate insulating layer covering the...
7682902 Memory structure and method of making the same  
A memory structure disclosed in the present invention features a control gate and floating gates being positioned in recessed trenches. A method of fabricating the memory structure includes the...
7678651 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device includes: providing a substrate structure in which a plurality of gate lines are already formed; forming a capping layer over the substrate...
7674677 Semiconductor device and a method for manufacturing the same  
A semiconductor device includes a semiconductor substrate provided with an active region including a gate forming area, a source forming area and a drain forming area. A recess is formed in the...
7674693 Method for manufacturing semiconductor device  
A method forming a semiconductor device includes forming a domed gate oxide film to relieve stress resulting from a thermal expansion rate difference of an oxide film and silicon film during a...
7674678 Method for producing a transistor component having a field plate  
A method for producing a transistor component having a field plate. One embodiment includes providing a semiconductor body having a first side, and including a first trench extending into the...
7670910 Method of forming self-aligned inner gate recess channel transistor  
A self-aligned inner gate recess channel in a semiconductor substrate includes a recess trench formed in an active region of the substrate, a gate dielectric layer formed on a bottom portion of...
7670904 Nonvolatile memory device and method for fabricating the same  
A method for fabricating a nonvolatile memory device comprises providing a substrate, forming an insulating layer and a conductive layer on the substrate, forming an electrical connection path out...
7670908 Configuration of high-voltage semiconductor power device to achieve three dimensional charge coupling  
This invention discloses semiconductor device that includes a top region and a bottom region with an intermediate region disposed between said top region and said bottom region with a controllable...
7666733 Method for making a vertical MOS transistor with embedded gate  
According to the invention, a transistor of vertical MOS type is produced in which an insulating assembly (28) formed above the drain (26) comprises insulating zones (42, 44) either side of the...
7666735 Method for forming semiconductor devices with active silicon height variation  
A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon...
7662687 Semiconductor memory having charge trapping memory cells and fabrication method thereof  
A semiconductor memory having charge trapping memory cells and fabrication method thereof. The direction of current flow of each channel region of the memory transistors runs transversely with...
7659165 Method of fabricating a field effect transistor  
A field effect transistor in which at least one vertically arranged semiconductor column, with a diameter in the nanometer range, is located between a source and a contact and has an annular...
7659560 Transistor structures  
A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively...
7655522 Metal oxide semiconductor (MOS) transistor having a recessed gate electrode and methods of fabricating the same  
A metal oxide semiconductor (MOS) includes an isolation layer disposed in a semiconductor substrate to define an active region. A source region and a drain region are disposed on both sides of the...
7651916 Electronic device including trenches and discontinuous storage elements and processes of forming and using the same  
An electronic device can include a substrate including a first trench having a first bottom and a first wall. The electrode device can also include a first gate electrode within the first trench...
7646041 Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same  
A flash memory device can include a semiconductor fin protruding from a semiconductor substrate of a first conductive type to extend in one direction, a first doped layer and a second doped layer...
7645671 Recessed access device for a memory  
Semiconductor memory devices having recessed access devices are disclosed. In some embodiments, a method of forming the recessed access device includes forming a device recess in a substrate...
7642161 Method of fabricating recess gate in semiconductor device  
A method of fabricating a semiconductor device includes forming an isolation structure in a substrate to define an active region, forming a recess mask pattern over the isolation structure and the...
7642160 Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches  
NAND arrays of memory cells are described, as well as methods of forming and using them. Memory cell charge storage devices, such as conductive floating gates, are oriented vertically in trenches,...
7642162 Semiconductor device and method of manufacturing the same  
A semiconductor device has plural columnar gate electrodes for plural MOSFETs formed in a row separately on a semiconductor substrate, and a semiconductor region which is formed in a part between...
7642593 Nonvolatile memory device and method of fabricating the same  
a nonvolatile memory device Includes an active region defined in a semiconductor substrate and a control gate electrode crossing over the active region. A gate insulating layer is interposed...
7638395 Semiconductor device fabricating method  
A method for fabricating a semiconductor device is provided which has first and second regions, transistors of different conductivity types being formed on parts of a substrate corresponding to...
7633109 DRAM structure and method of making the same  
A DRAM structure has a substrate, a buried transistor with a fin structure, a trench capacitor, and a surface strap on the surface of the substrate. The surface strap is used to electrically...
7629219 Method of fabricating a dual polysilicon gate of a semiconductor device with a multi-plane channel  
A dual polysilicon gate of a semiconductor device includes a substrate having a first region, a second region, and a third region, a channel region with a recessed structure formed in the first...
7625799 Method of forming a shielded gate field effect transistor  
A semiconductor region with an epitaxial layer extending over the semiconductor region is provided. A first silicon etch is performed to form an upper trench portion extending into and terminating...
7622351 Method of manufacturing semiconductor device and semiconductor device  
A method of manufacturing a semiconductor device, includes: forming a first and a second trench regions adjacent from each other in a first conductivity type semiconductor base; forming a second...
7622350 Method of manufacturing semiconductor device having cell transistor with recess channel structure  
A method of manufacturing a semiconductor device is provided. Device separation portions defining first, second and third regions are formed in a substrate. A recess is formed at the first region....
7615451 Method for forming semiconductor device  
A method for forming a semiconductor device is provided. More specifically, a method for forming a bulb-shaped portion of a bulb-shaped recess gate is provided to overcome an etching process...
7615449 Semiconductor device having a recess channel transistor  
The semiconductor device having a recess channel transistor includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower...
7615452 Method of fabrication of normally-off field-effect semiconductor device  
A normally-off HEMT is made by first providing a substrate having its surface partly covered with an antigrowth mask. Gallium nitride is grown by epitaxy on the masked surface of the substrate to...
7611947 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device of the present invention consists of forming a trench in a trench-type cell transistor region; forming a gate insulating film and a gate material...
7608878 Semiconductor device manufactured with a double shallow trench isolation process  
A method for manufacturing a semiconductor device includes forming a device isolation film by a double Shallow Trench Isolation (STI) process, forming a first active region having a negative slope...
7608511 Fabrication method of trenched power MOSFET with low gate impedance  
A fabrication method of a trenched power MOSFET with low gate impedance is provided. The fabrication method comprising the steps of: forming a plurality of trenches in an epitaxial layer; forming...
7601592 Method for forming multi-gate non-volatile memory devices using a damascene process  
According to a nonvolatile memory device having a multi gate structure and a method for forming the same of the present invention, a gate electrode is formed using a damascene process. Therefore,...