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7948024 Multi-layered, vertically stacked non-volatile memory device and method of fabrication  
A nonvolatile memory device is provided that includes; a first semiconductor layer extending in a first direction, a second semiconductor layer extending in parallel with and separated from the...
7947545 Method for producing a transistor gate with sub-photolithographic dimensions  
A method of fabricating a semiconductor device, the method comprises forming a mask layer over a compound semiconductor substrate; and patterning a photoresist over the mask layer. The method...
7943474 EDRAM including metal plates  
A method for forming a memory device is provided by first forming at least one trench in a semiconductor substrate. Next, a lower electrode is formed in the at least one trench, and thereafter a...
7943463 Methods of semiconductor processing involving forming doped polysilicon on undoped polysilicon  
A number of methods are provided for semiconductor processing. One such method includes depositing a first precursor material on a surface at a particular temperature to form an undoped...
7939409 Peripheral gate stacks and recessed array gates  
Methods are provided for simultaneously processing transistors in two different regions of an integrated circuit. Planar transistors are provided in a logic region while recessed access devices...
7936008 Structure and method for forming accumulation-mode field effect transistor with improved current capability  
An accumulation-mode field effect transistor includes a drift region of a first conductivity type, channel regions of the first conductivity type over and in contact with the drift region, and...
7935595 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device whereby the process is simplified and high performance can be obtained in both a trench-gate transistor and a planar transistor that has a thin...
7935577 Method for forming shielded gate field effect transistor using spacers  
A trench is formed in a semiconductor region. A dielectric layer lining sidewalls and bottom surface of the trench is formed. The dielectric layer is thicker along lower sidewalls and the bottom...
7932148 Processes for manufacturing MOSFET devices with excessive round-hole shielded gate trench (SGT)  
This invention discloses an improved trenched metal oxide semiconductor field effect transistor (MOSFET) device that includes a trenched gate surrounded by a source region encompassed in a body...
7927953 Nonvolatile semiconductor memory device and method for manufacturing the same  
On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon...
7928504 Semiconductor memory device and method for manufacturing the same  
A semiconductor memory device and a method for manufacturing the same are disclosed, which reduce parasitic capacitance generated between a storage node contact and a bit line of a...
7923327 Method of fabricating non-volatile memory device with concavely depressed electron injection region  
Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device comprises: a control gate region formed by doping a semiconductor substrate with...
7923821 Semiconductor integrated circuit substrate containing isolation structures  
Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the...
7923768 Semiconductor device with non-volatile memory function and method of manufacturing the same  
Disclosed are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate having source and drain areas; a floating gate between the...
7923326 Memory device and method for manufacturing the same  
A split gate (flash) EEPROM cell and a method for manufacturing the same is disclosed, in which a control gate and a floating gate are formed in a vertical structure, to minimize a size of the...
7915120 Method of fabricating non-volatile memory device  
Provided is a method of fabricating a non-volatile semiconductor device. The method includes: forming a first hard mask layer over a substrate; etching the first hard mask layer and the substrate...
7915108 Method for fabricating a semiconductor device with a FinFET  
A method for fabricating a semiconductor device includes forming a device isolation structure in a substrate to define active regions, forming a hard mask pattern to open a region defining an...
7915121 Method for manufacturing semiconductor device having buried gate  
A method for manufacturing a semiconductor device having a buried gate is provided. A gate conductive layer is first formed in the peri region before a bit line contact is formed in the cell...
7910983 MOS transistor having an increased gate-drain capacitance  
A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source...
7910430 NAND flash memory device and method of manufacturing the same  
A NAND flash memory device and method of manufacturing the same is disclosed. Source and drain select transistor gates are recessed lower than an active region of a semiconductor substrate. A...
7910431 Method for manufacturing semiconductor device  
On a surface of a Si substrate, a nonvolatile memory cell, an nMOS transistor, and a pMOS transistor are formed, and thereafter an interlayer insulation film covering the nonvolatile memory cell,...
7906397 Methods of fabricating nonvolatile semiconductor memory devices including a plurality of stripes having impurity layers therein  
A nonvolatile semiconductor memory device includes a plurality of pillars protruding upward from a semiconductor substrate and having respective top surfaces and opposing sidewalls, a bit line on...
7888203 Methods of making nonvolatile memory devices  
Nonvolatile memory devices and methods of making the same are described. A nonvolatile memory device includes a string selection transistor, a plurality of memory cell transistors, and a ground...
7888206 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device includes forming a recess with a device separating film and a first hard mask layer so that a pad nitride film for defining a recess gate region...
7888208 Method of fabricating non-volatile memory device  
A method of fabricating a non-volatile memory device, A tunnel insulating layer, a floating gate, and a pad nitride layer is formed on a semiconductor substrate. A isolation region of the...
7883966 Memory device and method for manufacturing the same  
A split gate (flash) EEPROM cell and a method for manufacturing the same is disclosed, in which a control gate and a floating gate are formed in a vertical structure, to minimize a size of the...
7883965 Semiconductor device and method for fabricating the same  
A semiconductor device includes a device isolation structure, a recess channel structure, and a gate electrode. The device isolation structure is formed in a semiconductor substrate to define an...
7879708 Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate  
A method for fabricating a floating gate memory device comprises using a buried diffusion oxide that is below the floating gate thereby producing an increased step height between the floating gate...
7875541 Shallow source MOSFET  
Fabricating a semiconductor device includes forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate through the hard mask, depositing gate material in...
7872297 Flash memory device and fabricating method thereof comprising a body recess region  
The present invention relates to a flash memory device and its fabrication method. The device comprises a structure for improving a scaling-down characteristic/performance and increasing memory...
7871939 Method for manufacturing semiconductor device using a free radical assisted chemical vapor deposition nitrifying process  
A method for manufacturing a semiconductor device for use in avoiding unwanted oxidation along exposed surfaces and for use in relieving etching damage is presented. The method includes step of...
7867872 Method for manufacturing semiconductor device with uniform concentration ion doping in recess gate channel region  
A semiconductor device is manufactured by defining a groove in a semiconductor substrate, where the groove includes an upper portion and a lower portion, among other steps. A sacrificial layer is...
7867855 Method of fabricating high voltage semiconductor devices with JFET regions containing dielectrically isolated junctions  
A high-voltage field-effect device contains an extended drain or “drift” region having a plurality of JFET regions separated by portions of the drift region. Each of the JFET regions is filled...
7867846 Organic light emitting display (OLED) having a gas vent groove to decrease edge open failures  
An Organic Light Emitting Display (OLED) and its fabrication method has a pixel defining layer provided on a first electrode which is formed with a gas vent groove to allow gas to vent when the...
7867845 Transistor gate forming methods and transistor structures  
A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively...
7863675 MOSFET using gate work function engineering for switching applications  
This invention discloses a new MOSFET device. The MOSFET device has an improved operation characteristic achieved by manufacturing a MOSFET with a higher gate work function by implementing a...
7863676 Semiconductor devices and methods of fabricating the same  
A semiconductor device includes a device isolation layer in a semiconductor substrate, an active region defined by the device isolation layer, the active region including a main surface and a...
7859017 Normally-off field-effect semiconductor device  
A normally-off HEMT is made by first providing a substrate having its surface partly covered with an antigrowth mask. Gallium nitride is grown by epitaxy on the masked surface of the substrate to...
7858471 Methods of fabricating an access transistor for an integrated circuit device, methods of fabricating periphery transistors and access transistors, and methods of fabricating an access device comprising access transistors in an access circuitry region and peripheral transistors in a peripheral circuitry region spaced from the access circuitry region  
Fabrication methods for gate transistors in integrated circuit devices enable the formation of recessed access device structures or FinFET structures having P-type workfunctions. The fabrication...
7858476 Method for fabricating semiconductor device with recess gate  
A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate, forming a first recess in the substrate and a passivation layer on sidewalls of the first...
7851313 Semiconductor device and process for improved etch control of strained silicon alloy trenches  
A semiconductor process for improved etch control in which an anisotropic selective etch is used to better control the shape and depth of trenches formed within a semiconductor material. The...
7851283 Field effect transistor with raised source/drain fin straps  
Therefore, disclosed above are embodiments of a multi-fin field effect transistor structure (e.g., a multi-fin dual-gate FET or tri-gate FET) that provides low resistance strapping of the...
7851311 Method of manufacturing non-volatile memory device  
Non-volatile memory devices and a method of manufacturing the same, wherein data storage of two bits per cell is enabled and the devices can pass the limit in terms of layout, whereby channel...
7846788 Semiconductor device and method of fabrication thereof  
A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation...
7847347 Semiconductor device and method of manufacturing the same  
A gate trench 13 is formed in a semiconductor substrate 10. The gate trench 13 is provided with a gate electrode 16 formed over a gate insulating film 14. A portion of the gate electrode 16...
7842572 Methods of manufacturing semiconductor devices with local recess channel transistors  
A method of manufacturing a local recess channel transistor in a semiconductor device. A hard mask layer is formed on a semiconductor substrate that exposes a portion of the substrate. The exposed...
7842998 Nonvolatile semiconductor memory device and method for manufacturing the same  
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory device including: a semiconductor substrate; memory cell transistors that are...
7838365 SONOS memory device having curved surface and method for fabricating the same  
A new SONOS memory device is provided, in which a conventional planar surface of multi-dielectric layers (ONO layers) is instead formed with a curved surface such as a cylindrical shape, and...
7838404 Method of fabricating a nonvolatile semiconductor memory  
A nonvolatile semiconductor memory fabrication method including forming a first insulating film and a floating gate electrode material on a semiconductor substrate; forming a gate insulating film...
7838362 Method of making an embedded trap direct tunnel non-volatile memory  
The cell comprises a substrate having a drain region and a source region. An oxynitride layer is formed over the substrate. An embedded trap layer is formed over the oxynitride layer. An injector...