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8071445 Method for manufacturing semiconductor device, and semiconductor device  
In a transistor region, a source interconnect layer and a gate electrode are buried in trenches. A source extending region is provided adjacent to the transistor region or in the transistor...
8072024 Nonvolatile semiconductor memory device and method for manufacturing same  
A nonvolatile semiconductor memory device with a substrate. A plurality of dielectric films and electrode films are alternately stacked on the substrate and have a through hole penetrating in the...
8072036 Micro-electromechanical system microphone structure  
A method of fabricating a micro-electromechanical system microphone structure is disclosed. First, a substrate defining a MEMS region and a logic region is provided, and a surface of the substrate...
8071412 Method of fabricating micro-electromechanical system microphone structure  
A method of fabricating a micro-electromechanical system microphone structure is disclosed. First, a substrate defining a MEMS region and a logic region is provided, and a surface of the substrate...
8058119 Device scheme of HKMG gate-last process  
The present disclosure provides a method for making metal gate stacks of a semiconductor device. The method includes forming a high k dielectric material layer on a semiconductor substrate;...
8058140 Thickened sidewall dielectric for memory cell  
Methods and devices are disclosed, such as those involving memory cell devices with improved charge retention characteristics. In one or more embodiments, a memory cell is provided having an...
8053313 Semiconductor device and method of fabricating the same  
In a method of fabricating a semiconductor device on a substrate having a pillar pattern, a gate electrode is formed on the pillar pattern without etching the latter. A conductive pattern is...
8053286 Method of forming semiconductor device including trench gate structure  
A method of forming a semiconductor device is provided, which may include, but is not limited to, the following processes. Grooves may be formed in an insulating region and in a semiconductor...
8048739 Method of manufacturing flash memory device  
According to yet another embodiment, a method for forming a non-volatile memory device includes etching a substrate to form first and second trenches. The first and second trenches are filled with...
8043913 Method of forming trench-gate field effect transistors  
A method of forming a field effect transistor includes: forming a trench in a semiconductor region; forming a shield electrode in the trench; performing an angled sidewall implant of impurities of...
8039336 Semiconductor device and method of fabrication thereof  
A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation...
8034686 Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts  
An integrated configuration comprising trench MOSFET having trench contacts and trench Schottky rectifier having planar contacts is disclosed. The trench contacts for trench MOSFET provide a lower...
8034684 Semiconductor device with improved overlay margin and method of manufacturing the same  
Semiconductor devices with an improved overlay margin and methods of manufacturing the same are provided. In one aspect, a method includes forming a buried bit line in a substrate; forming an...
8034682 Power device with trenches having wider upper portion than lower portion  
A method of forming a semiconductor device includes the following. Removing portions of a silicon layer such that a trench having sidewalls which fan out near the top of the trench to extend...
8035136 Semiconductor device and method of manufacturing the same  
In a semiconductor device and a method of manufacturing the same, a substrate is defined into active and non-active regions by a device isolation layer and a recessed portion is formed on the...
8030636 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication  
A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first...
8021970 Method of annealing a dielectric layer  
A method includes forming a first dielectric layer over a substrate; forming nanoclusters over the first dielectric layer; forming a second dielectric layer over the nanoclusters; annealing the...
8021946 Nonvolatile memory device and method for fabricating the same  
A nonvolatile (e.g., flash) memory device includes a substrate having a plurality of isolation areas and active areas; a trench formed on the isolation area; a first electrode layer formed on an...
8022470 Semiconductor device with a trench gate structure and method for the production thereof  
A semiconductor device with a trench gate structure includes a semiconductor body with switching electrodes. At least gate electrode controls the off state and the on state between the switching...
8017991 Non-volatile memory device and methods of operating and fabricating the same  
Example embodiments provide a non-volatile memory device with increased integration and methods of operating and fabricating the same. A non-volatile memory device may include a plurality of first...
8017477 Nonvolatile memory devices and methods of fabricating the same  
A nonvolatile memory device includes a plurality of first control gate electrodes, second control gate electrodes, first storage node films, and second storage node films. The first control gate...
8017479 Semiconductor device having multi-channel and method of fabricating the same  
An embodiment of the present invention relates to a semiconductor device having a multi-channel and a method of fabricating the same. In an aspect, the semiconductor device includes a...
8013386 Semiconductor device having trench-gate transistor with parallel channel regions in gate trench  
A semiconductor device includes, on a semiconductor substrate, an active region surrounded by an STI region, a gate trench formed in one direction transverse to the active region, a gate...
8012828 Recess gate transistor  
A recess gate of a semiconductor device is provided, comprising: a substrate having a recess formed therein; a metal layer formed at the bottom of the recess; a polysilicon layer formed over the...
8012829 Semiconductor device and method of manufacturing the same  
Example embodiments are directed to a method of manufacturing a semiconductor device and a semiconductor device including a substrate including a plurality of active regions and a plurality of...
8013388 Semiconductor device and method of manufacturing the same  
Disclosed herein is a method of manufacturing a semiconductor device that is adapted to improve the production yield. The method generally includes etching a semiconductor substrate to form a...
8008151 Shallow source MOSFET  
A method of fabricating a semiconductor device comprises forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate, through the hard mask, depositing...
8003459 Method for forming semiconductor devices with active silicon height variation  
A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon...
7998813 Methods of fabricating an access transistor having a polysilicon-comprising plug on individual of opposing sides of gate material  
Fabrication methods for gate transistors in integrated circuit devices enable the formation of recessed access device structures or FinFET structures having P-type workfunctions. The fabrication...
7998809 Method for forming a floating gate using chemical mechanical planarization  
An improved process forming a floating gate region of a semiconductor memory device. The process includes using a ceria slurry for chemical mechanical planarization to provide “stop on...
7999314 Semiconductor device and manufacturing method thereof  
A semiconductor device includes an n-conductive type semiconductor substrate having a main side and a rear side, a p-conductive type layer arranged over the main side of the substrate, a main side...
7993986 Sidewall graphene devices for 3-D electronics  
A device is provided that includes a structure having a sidewall surface, a layer of material provided on the sidewall surface, and a device structure provided in contact with the layer of...
7986029 Dual SOI structure  
A semiconductor structure having a hybrid crystal orientation is provided. The semiconductor structure includes an insulator layer, e.g., a buried oxide (BOX), on a first semiconductor layer, and...
7985610 Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell  
A method for forming emitter layer of a solar cell includes preparing a substrate including a first impurity of a first conductive type, diffusing a second impurity of a second conductive type...
7985647 Method of manufacturing nonvolatile memory device  
In one embodiment of a method of manufacturing a nonvolatile memory device, a tunnel insulating layer and a charge trap layer are first formed over a semiconductor substrate that defines active...
7986002 FINFET-type semiconductor device and method for fabricating the same  
A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the...
7981709 Semiconductor device and method for fabricating the same  
A method for fabricating a semiconductor device includes the steps of forming a SiC film, forming trenches at a surface of the SiC film, heat-treating the SiC film with silicon supplied to the...
7982284 Semiconductor component including an isolation structure and a contact to the substrate  
A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the...
7981817 Method for manufacturing semiconductor device using multiple ion implantation masks  
A production method for a semiconductor device includes providing a semiconductor substrate having semiconductor layer of a first conductivity type formed on a surface thereof; forming a first...
7977188 Method for fabricating semiconductor memory device  
A method for manufacturing a semiconductor device comprises forming a first spacer layer at sidewalls of one or more gate electrodes, forming a trench by etching an isolation insulating layer...
7977191 Method for fabricating flash memory device  
A method of forming a flash memory device includes forming a plurality of memory gates over a semiconductor substrate, forming an oxide film over the uppermost surface and sidewalls of the memory...
7977187 Method of fabricating a buried-gate semiconductor device and corresponding integrated circuit  
A semiconductor device includes a semiconductive channel region and a gate region. The gate region has at least one buried part extending under the channel region. The buried part of the gate...
7977189 Semiconductor device and method of manufacturing the same  
The present invention relates to a semiconductor device that includes a semiconductor substrate (10) having source/drain diffusion regions (14) formed therein and control gates (20) formed...
7964488 Semiconductor device and method for fabricating the same  
A semiconductor device includes a substrate where an isolation region and a plurality of active regions are defined, an anti-interference layer formed over the substrate in the isolation region,...
7960229 Metal oxide semiconductor transistor with reduced gate height, and related fabrication methods  
A metal oxide semiconductor transistor device having a reduced gate height is provided. One embodiment of the device includes a substrate having a layer of semiconductor material, a gate structure...
7960761 Semiconductor device having a recess channel transistor  
The semiconductor device having a recess channel transistor includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower...
7955920 Field effect transistor with self-aligned source and heavy body regions and method of manufacturing same  
A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches include a plurality of gated trenches and a...
7951673 Forming abrupt source drain metal gate transistors  
A gate structure may be utilized as a mask to form source and drain regions. Then the gate structure may be removed to form a gap and spacers may be formed in the gap to define a trench. In the...
7952128 Semiconductor device  
Provided is a metal oxide semiconductor (MOS) capacitor, in which trenches (3) are formed in a charge accumulation region (6) of a p-type silicon substrate (1) to reduce a contact area between the...
RE42409 Method of manufacturing flash memory device  
A method of manufacturing a flash memory device includes the steps of forming trenches by forming a tunnel oxide layer and a conductive layer for a floating gate over a semiconductor substrate,...