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8633073 Method of forming semiconductor device  
A method of forming a semiconductor device includes the following processes. A first groove is formed in a semiconductor substrate. A first conductive film is formed in the first groove and over...
8633036 Manufacturing method of ferroelectric capacitor  
Provided is a ferroelectric memory including a silicon substrate, a transistor formed on the silicon substrate, and a ferroelectric capacitor formed above the transistor. The ferroelectric...
8618603 Nonvolatile semiconductor memory device and method for manufacturing same  
A nonvolatile semiconductor memory device includes: a semiconductor member; a memory film provided on a surface of the semiconductor member and being capable of storing charge; and a plurality of...
8609488 Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith  
Trenches are formed into semiconductive material. Masking material is formed laterally over at least elevationally inner sidewall portions of the trenches. Conductivity modifying impurity is...
8609492 Vertical memory cell  
Methods of forming, devices, and apparatus associated with a vertical memory cell are provided. One example method of forming a vertical memory cell can include forming a semiconductor structure...
8603891 Methods for forming vertical memory devices and apparatuses  
Methods of forming vertical memory devices include forming first trenches, at least partially filling the first trenches with a polysilicon material, and forming second trenches generally...
8597998 Power MOS device fabrication  
Fabricating a semiconductor device includes forming a mask on a substrate having a top substrate surface; forming a gate trench in the substrate, through the mask; depositing gate material in the...
8598653 FinFET having cross-hair cells  
Systems and methods are disclosed for manufacturing grounded gate cross-hair cells and standard cross-hair cells of fin field-effect transistors (finFETs). In one embodiment, a process may include...
8592897 Semiconductor device comprising transistor structures and methods for forming same  
A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the...
8592895 Field effect transistor with source, heavy body region and shielded gate  
A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches includes a plurality of gated trenches and...
8592274 LDMOS with accumulation enhancement implant  
A lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor device includes an enhancement implant region formed in a portion of an accumulation region proximate a P-N junction between...
8587051 Nonvolatile semiconductor memory device  
Provided is an electrically erasable and programmable nonvolatile semiconductor memory device whose tunnel region formed in the drain region has the second conductivity-type...
8587047 Capacitor formation for a pumping circuit  
A capacitor structure for a pumping circuit includes a substrate, a U-shaped bottom electrode in the substrate, a T-shaped top electrode in the substrate and a dielectric layer disposed between...
8586432 Method for manufacturing vertical-channel tunneling transistor  
The present invention belongs to the technical field of semiconductors and specifically relates to a method for manufacturing a vertical-channel tunneling transistor. In the present invention, the...
8575688 Trench device structure and fabrication  
A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is...
8575672 Nonvolatile semiconductor memory devices  
A nonvolatile semiconductor memory device includes a plurality of pillars protruding upward from a semiconductor substrate and having respective top surfaces and opposing sidewalls, a bit line on...
8569131 Source/drain-to-source/drain recessed strap and methods of manufacture of same  
A structure and a method of making the structure. The structure includes first and second semiconductor regions in a semiconductor substrate and separated by a region of trench isolation in the...
8563377 Trench-based power semiconductor devices with increased breakdown voltage characteristics  
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
8564053 Trench MOSFET with trenched floating gates in termination  
A trench MOSFET comprising multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction of body regions in...
8564052 Trench MOSFET with trenched floating gates in termination  
A trench MOSFET comprising a plurality of transistor cells, multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than...
8557660 Semiconductor device and method for forming the same  
A method for forming a semiconductor device is disclosed. The method for forming the semiconductor device includes forming a pad insulating layer on a semiconductor substrate, forming a recess by...
8552523 Semiconductor device and method for manufacturing  
A method for manufacturing a semiconductor device is disclosed. The method includes forming a shallow trench isolation (STI) region extending in a first direction on a semiconductor substrate,...
8541835 Schottky FET fabricated with gate last process  
A field effect transistor (FET) includes a semiconductor on insulator substrate, the substrate comprising a top semiconductor layer; source and drain regions located in the top semiconductor...
8530306 Method of forming a slit recess channel gate  
A slit recess channel gate is further provided. The slit recess channel gate includes a substrate, a gate dielectric layer, a first conductive layer and a second conductive layer. The substrate...
8525256 Power semiconductor structure with schottky diode  
A power semiconductor structure with schottky diode is provided. In the step of forming the gate structure, a separated first polysilicon structure is also formed on the silicon substrate. Then,...
8519456 Solid-state image pickup device, image pickup apparatus including the same, and method of manufacturing the same  
A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.
8518813 Semiconductor device and method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device in which a stress can be effectively applied from a semiconductor layer having a different lattice constant from a semiconductor substrate to a...
8519477 Trench MOSFET with trenched floating gates and trenched channel stop gates in termination  
A trench MOSFET comprising multiple trenched floating gates in termination area is disclosed. The multiple trenched floating gates have trench depth equal to or deeper than body junction of body...
8519484 Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same  
A semiconductor device having a dual trench and methods of fabricating the same, a semiconductor module, an electronic circuit board, and an electronic system are provided. The semiconductor...
8518777 Method for forming accumulation-mode field effect transistor with improved current capability  
A method of forming an accumulation-mode field effect transistor includes forming a channel region of a first conductivity type in a semiconductor region of the first conductivity type. The...
8513733 Edge termination region of a semiconductor device  
An isolation region (14) is formed between an edge termination region (2) having deep trenches (20,34) and the central region (4). The isolation region includes gate fingers (18) extending from...
8507979 Semiconductor integrated circuit with metal gate  
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a semiconductor substrate and forming a gate trench therein. The method also includes...
8507353 Method of forming semiconductor device having self-aligned plug  
A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first...
8507344 Semiconductor device having a buried gate and method for manufacturing the same  
A semiconductor device and a method for manufacturing the same are disclosed. The method for forming the semiconductor device includes forming one or more buried gates in a semiconductor...
8507978 Split-gate structure in trench-based silicon carbide power device  
An integrated structure includes a plurality of split-gate trench MOSFETs. A plurality of trenches is formed within the silicon carbide substrate composition, each trench is lined with a...
8502306 Semiconductor device  
According to one embodiment, a semiconductor device includes a semiconductor substrate and a first semiconductor element provided on the semiconductor substrate. The first semiconductor element...
8502293 Capacitor with recessed plate portion for dynamic random access memory (DRAM) and method to form the same  
A capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. A second dielectric...
8497173 Semiconductor device and method for manufacturing the same  
A semiconductor device and a method for manufacturing the same are disclosed. A recess gate structure is formed between an overlapping region between a gate and a source/drain so as to suppress...
8492816 Deep trench decoupling capacitor  
Solutions for forming a silicided deep trench decoupling capacitor are disclosed. In one aspect, a semiconductor structure includes a trench capacitor within a silicon substrate, the trench...
8487369 Semiconductor device with buried gates and buried bit lines and method for fabricating the same  
A semiconductor device includes: a plurality of first trenches formed inside a plurality of active regions; a plurality of buried gates configured to partially fill insides of the plurality of the...
8476125 Fabrication technique for high frequency, high power group III nitride electronic devices  
Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The...
8470669 System and method for EEPROM architecture  
A method for manufacturing an Electrically Erasable Programmable Read-Only Memory (EEPROM) device includes providing a substrate and forming a gate oxide over the substrate. Also, the method...
8461004 Configuration of high-voltage semiconductor power device to achieve three dimensional charge coupling  
This invention discloses semiconductor device that includes a top region and a bottom region with an intermediate region disposed between said top region and said bottom region with a controllable...
8455944 Semiconductor device having a trench-gate transistor  
A semiconductor device includes, on a semiconductor substrate, an active region surrounded by an STI region, a gate trench formed in one direction transverse to the active region, a gate...
8455932 Local interconnect structure self-aligned to gate structure  
A common cut mask is employed to define a gate pattern and a local interconnect pattern so that local interconnect structures and gate structures are formed with zero overlay variation relative to...
8450175 Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith  
Trenches are formed into semiconductive material. Masking material is formed laterally over at least elevationally inner sidewall portions of the trenches. Conductivity modifying impurity is...
8431457 Method for fabricating a shielded gate trench MOS with improved source pickup layout  
A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and...
8420484 Semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage (GIDL) and method for manufacturing the same  
A semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage is presented. The semiconductor device includes a semiconductor substrate, a buried gate, and...
8421142 Nonvolatile semiconductor memory device and method of manufacturing the same  
In one embodiment, a nonvolatile semiconductor memory device includes a substrate, and a well region formed in the substrate. The device further includes device regions formed in the well region...
8420469 Schottky FET fabricated with gate last process  
A method for forming a field effect transistor (FET) includes forming a dummy gate on a top semiconductor layer of a semiconductor on insulator substrate; forming source and drain regions in the...