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7060562 Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor  
A method for fabricating gate electrodes (7) in a field plate trench transistor (1) having a cell array with a plurality of trenches (3) and a plurality of mesa regions (8) arranged between the...
7056816 Method for manufacturing semiconductor device  
A mask layer having an opening is formed on a semiconductor substrate. Next, oxygen ions and a first impurity are implanted into the semiconductor substrate using the mask layer as a mask. Then,...
7053442 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device having a small layout area includes a memory cell array in which a plurality of memory cells are arranged in a row direction and a column direction. The...
7049185 Semiconductor device having dummy gates and its manufacturing method  
In a semiconductor device including active areas where transistors are formed and a field area for isolating the active areas from each other, the field area has a plurality of dummy areas where...
7049153 Polymer-based ferroelectric memory  
Integrated memory circuits, key components in thousands of electronic and computer products, have been made using ferroelectric materials, which offer faster write cycles and lower power...
7049194 Trench DMOS device with improved drain contact  
A trench DMOS transistor device that comprises: (a) a substrate of a first conductivity type; (b) an epitaxial layer of first conductivity type over the substrate, wherein the epitaxial layer has...
7045426 Vertical type power MOSFET having trenched gate structure  
A power MOSFET comprising a drain layer of a first conductivity type, a drift layer of the first conductivity type provided on the drain layer, a base layer of a first or a second conductivity...
7045422 Semiconductor gate structure and method for fabricating a semiconductor gate structure  
A method for fabricating a semiconductor gate structure including depositing at least one sacrificial layer on a semiconductor substrate; patterning the at least one sacrificial layer to form at...
7041556 Vertical transistor and method of making  
The invention relates to a vertical transistor and an oxidation process that achieves a substantially curvilinear recess bottom. The recess serves as the gate receptacle that may facilitate a more...
7041572 Fabrication method for a deep trench isolation structure of a high-voltage device  
A fabrication method for a semiconductor device. On a semiconductor silicon substrate with a first type conductivity, an epitaxial layer with a second type conductivity and an oxide layer on the...
7038267 Non-volatile memory cell and manufacturing method thereof  
A non-volatile memory cell is provided. The non-volatile memory at least includes a substrate, a gate, a first source/drain region, a composite dielectric layer and a second source/drain region. A...
7033891 Trench gate laterally diffused MOSFET devices and methods for making such devices  
A MOSFET device for RF applications that uses a trench gate in place of the lateral gate used in lateral MOSFET devices is described. The trench gate in the devices of the invention is provided...
7033889 Trenched semiconductor devices and their manufacture  
In semiconductor devices which include an insulated trench electrode (11) in a trench (20), for example, trench-gate field effect power transistors and trenched Schottky diodes, a cavity (23) is...
7023045 Layout of a flash memory having symmetric select transistors  
A layout of flash memory having symmetric select transistors includes a memory cell array and a polysilicon gate. The polysilicon gate forms a plurality of select transistors in coordination with...
7022573 Stack gate with tip vertical memory and method for fabricating the same  
A stacked gate vertical flash memory and a fabrication method thereof. The stacked gate vertical flash memory comprises a semiconductor substrate with a trench, a source conducting layer formed on...
7015101 Multi-level gate SONOS flash memory device with high voltage oxide and method for the fabrication thereof  
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a gate dielectric layer over the semiconductor substrate. The gate dielectric...
7015543 Trench-gate semiconductor device and fabrication method thereof  
A trench gate semiconductor device, which can improve the difficulty of channel inversion to thereby improve the switching characteristics as maintaining the effect of suppression of short-channel...
7015102 Method of forming floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells made thereby  
A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes an electrical conductive floating gate formed in a trench in a...
6998676 Double-gate structure fin-type transistor  
A semiconductor device has a fin-type transistor formed in a projecting semiconductor region. The projecting semiconductor region is formed on a major surface of a semiconductor substrate of a...
6992348 Semiconductor memory with vertical charge-trapping memory cells and fabrication  
Outside a memory cell field, bit-line contacts are provided on the top bit lines and additional bit-line contacts are provided on the lower bit lines and are each connected in an electrically...
6984559 Method of fabricating a flash memory  
A method of fabricating a flash memory is provided. A substrate having several device isolation structures for defining an active region is provided. A tunneling dielectric layer and a patterned...
6982202 Fabrication method for memory cell  
Method of fabricating a memory cell, in which a storage layer, which is designed for programming by charge carrier trapping, and a gate electrode, which is electrically insulated from a...
6979618 Method of manufacturing NAND flash device  
A method of manufacturing a NAND flash device which can improve uniformity of disturb fail characteristics by performing an annealing process after an ion implantation process for forming a P...
6979857 Apparatus and method for split gate NROM memory  
A split gate, vertical NROM memory cell is comprised of a plurality of oxide pillars that each has a source/drain region formed in the top of the pillar. A trench is formed between each pair of...
6979862 Trench MOSFET superjunction structure and method to manufacture  
A power semiconductor device including a plurality of trenches each for supporting a gate structure adjacent a channel region, and a plurality of drain columns each under the bottom of each...
6979859 Flash memory cell and fabrication method  
Memory cells, formed as trench transistors, having a respective floating gate electrode and a control gate electrode at a trench wall above a channel region between doped regions for source and...
6967139 Method of manufacturing semiconductor device  
In a conventional power MOSFET, an electric field concentration occurs at a gate electrode bottom portion on the outermost periphery of an operating area, thereby causing a deterioration in high...
6949432 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface  
A trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface and methods of making the same. The transistor structure comprises: (1) a first...
6943082 Method for manufacturing a nonvolatile memory device  
A method, for manufacturing a nonvolatile memory device, includes: forming a gate layer above which a stopper layer is disposed on a semiconductor layer; forming control gates on both side...
6939765 Integration method of a semiconductor device having a recessed gate electrode  
Embodiments of the invention are directed to an integrated circuit device and a method for forming the device. In some embodiments of the invention, two types of transistors are formed on a single...
6933196 Isolation structure and method for semiconductor device  
A device isolation structure and method for a semiconductor device according to the present invention includes forming first and second trenches by etching predetermined regions of a semiconductor...
6927130 Method of manufacturing a trench gate type field effect transistor  
A trench gate type field effect transistor capable of effectively suppressing the short channel effect is formed with a shallow junction between a source and a drain, at low resistance, and...
6924197 Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source  
The present invention provides a flash memory integrated circuit and a method of fabricating the same. A tunnel dielectric in an erasable programmable read only memory (EPROM) device is nitrided...
6916707 High coupling floating gate transistor  
The present invention provides methods of fabricating floating gate transistors. One method includes forming laterally spaced source and drain regions to define a channel therebetween, forming a...
6916711 EEPROM memory cell and method of forming the same  
An EEPROM memory cell and a method of forming the same are provided. A portion of a floating gate is formed on walls of a trench formed on the substrate. An inside of the trench is filled with a...
6909141 Method for producing a vertical semiconductor transistor component and vertical semiconductor transistor component  
A vertical semiconductor transistor component is built up on a substrate by using a statistical mask. The vertical semiconductor transistor component has vertical pillar structures statistically...
6905927 Method for forming a gate electrode in a semiconductor device including re-oxidation for restraining the thickness of the gate oxide  
A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a...
6905944 Sacrificial collar method for improved deep trench processing  
A method for fabricating a deep trench etched into a semiconductor substrate is provided by the present invention. The trench is divided into an upper portion and a lower portion and the method...
6897115 Method of fabricating non-volatile memory device  
A method of fabricating a non-volatile memory device includes the steps of forming a lower conductive layer on a substrate, forming a lower and an upper sacrificial patterns on the substrate with...
6897114 Methods of forming a transistor having a recessed gate electrode structure  
In manufacturing a recessed gate transistor, a channel implantation and a source/drain implantation are performed by means of a single implantation mask prior to the formation of a gate opening....
6893921 Nonvolatile memories with a floating gate having an upward protrusion  
In a nonvolatile memory cell, the floating gate (160) has an upward protruding portion. This portion can be formed as a spacer over a sidewall of the select gate (140). The spacer can be formed...
6890820 Method of fabricating FLASH memory devices  
A method of fabricating split gate type FLASH memory device comprises forming trench device isolation layers in a substrate to define a plurality of parallel first active regions. A gate...
6888196 Vertical MOSFET reduced in cell size and method of producing the same  
In a vertical MOSFET comprises: a semiconductor layer (1, 2, 9, 10) having first and second surfaces opposite to each other and trenches (6) formed on the first surface; trench gates (8) formed in...
6881628 Vertical flash memory cell with buried source rail  
A non-volatile memory cell has been described that includes source and drain regions that are fabricated on different horizontal planes. A floating gate and a control gate are fabricated...
6881627 Flash memory with ultra thin vertical body transistors  
Structures and method for Flash memory with ultra thin vertical body transistors are provided. The Flash memory includes an array of memory cells including floating gate transistors. Each floating...
6878992 Vertical-type power MOSFET with a gate formed in a trench  
A power MOSFET comprises, between source and drain electrodes, a low resistive semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type formed on the...
6867098 Method of forming nonvolatile memory device  
Disclosed herein is a method of forming a nonvolatile memory device. The method comprises steps of forming a tunnel insulation pattern and a first floating gate pattern that are sequentially...
6867083 Method of forming a body contact of a transistor and structure therefor  
A transistor (10, 30, 60) is formed to have a body contact (16, 36, 69) that has a minimal contact to the sides of the source region (14, 34, 63). This increases the density and reduces...
6867099 Spilt-gate flash memory structure and method of manufacture  
A split-gate flash memory structure. The flash memory at least includes a substrate having a trench therein, a floating gate, a select gate and a source/drain region. The floating gate is formed...
6861315 Method of manufacturing an array of bi-directional nonvolatile memory cells  
A method of making an array of bi-directional non-volatile memory cells in a substrate of a substantially single crystalline semiconductive material, where the material has a first conductivity...