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7413947 Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor  
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor,...
7410872 Sealing method for electronic devices formed on a common semiconductor substrate and corresponding circuit structure  
A method for sealing electronic devices formed on a semiconductor substrate includes forming a plurality of first electronic devices adjacent a first portion of the semiconductor substrate, with...
7410870 Methods of forming non-volatile memory devices and devices formed thereby  
Methods of forming non-volatile memory devices include steps to define features that enhance shielding of electronic interference between adjacent floating gate electrodes and improve leakage...
7407856 Method of manufacturing a memory device  
A method of manufacturing a memory device includes defining a field region and an active region in a substrate, forming a field oxide layer on the field region, forming an insulating layer on the...
7405123 Electrically erasable programmable read-only memory cell and memory device and manufacturing method thereof  
A manufacturing method and a device of an EEPROM cell are provided. The method includes the following steps. First, a tunnel layer and an inter-gate dielectric layer are formed over a surface of a...
7402493 Method for forming non-volatile memory devices  
According to a nonvolatile memory device having a multi gate structure and a method for forming the same of the present invention, a gate electrode is formed using a damascene process. Therefore, a...
7402492 Method of manufacturing a memory device having improved erasing characteristics  
In a method of manufacturing a memory device having improved erasing characteristics, the method includes sequentially forming a tunneling oxide layer, a charge storing layer, and a blocking oxide...
7396723 Method of manufacturing EEPROM device  
A method of manufacturing an EEPROM device can reduce the cell area. The method of manufacturing an Electrically Erasable Programmable Read-Only Memory (EEPROM) includes forming a mask pattern over...
7393748 Method of fabricating a semiconductor memory device  
A NAND cell unit is formed with an advanced gate forming process on a semiconductor layer of a first conductivity type, which is formed on a semiconductor substrate of the first conductivity type...
7393747 Nonvolatile semiconductor memory and a fabrication method thereof  
A nonvolatile semiconductor memory includes a plurality of memory cell transistors, having floating gates, control gates, and inter-gate insulating films each arranged between corresponding...
7393744 Method of manufacturing dielectric film of flash memory device  
A method of manufacturing a dielectric film of a flash memory device, including the steps of providing a semiconductor substrate having floating gates formed therein, performing an oxidization...
7393737 Semiconductor device and a method of manufacturing the same  
A semiconductor device which, in spite of the existence of a dummy active region, eliminates the need for a larger chip area and improves the surface flatness of the semiconductor substrate. In the...
7387934 Nonvolatile semiconductor memory and manufacturing method for the same  
The memory cell matrix encompasses (a) a plurality device isolation films running along column direction, (b) first conductive layers arranged along row and column-directions, adjacent groups of...
7384846 Method of fabricating semiconductor device  
A method of fabricating semiconductor devices. Upon formation of a trench for isolation in a cell region, a hard mask film is used as an etch mask. It is thus possible to prevent attacks of a lower...
7384845 Methods of fabricating flash memory devices including word lines with parallel sidewalls  
Methods of fabricating integrated circuit devices are provided. The method includes forming a buried diffusion layer in a source active region. A word line pattern is formed crossing over parallel...
7381616 Method of making three dimensional, 2R memory having a 4F2 cell size RRAM  
A method of fabricating a multi-level 3D memory array includes: preparing a wafer and peripheral circuits thereon; layers of metal, memory resistor material, and metal are deposited, patterned and...
7381615 Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices  
Methods for self-aligned trench filling to isolate active regions in high-density integrated circuits are provided. A deep, narrow trench is etched into a substrate between active regions. The...
7378315 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device for a system on chip (SOC) for embodying a transistor for a logic device, an electrical erasable programmable read only memory (EEPROM) cell and a...
7375018 Method of manufacturing semiconductor device  
Etching is performed on an insulating layer 23 and a conductive layer 32 with a photoresist 41 as the mask, to form an opening 51 in the conductive layer 32 . After removing the...
7374980 Field effect transistor with thin gate electrode and method of fabricating same  
A field effect transistor and a method of fabricating the field effect transistor. The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric...
7371645 Method of manufacturing a field effect transistor device with recessed channel and corner gate device  
Fabrication of recessed channel array transistors (RCAT) with a corner gate device includes forming pockets between a semiconductor fin that includes a gate groove and neighboring shallow trench...
7371631 Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device  
For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors...
7368347 Dual bit flash memory devices and methods for fabricating the same  
Methods for fabricating dual bit flash memory devices are provided. Method steps include forming a charge trapping layer overlying a substrate and fabricating two insulating members overlying the...
7364969 Semiconductor fabrication process for integrating formation of embedded nonvolatile storage device with formation of multiple transistor device types  
A semiconductor fabrication process includes forming polysilicon nanocrystals on a tunnel oxide overlying a first region of a substrate. A second dielectric is deposited overlying the first region...
7361564 Method of manufacturing high-voltage device  
A method of manufacturing a high-voltage device DDD (Double Doped Drain) ion implantation process is performed at a tilt angle in order to form a smooth junction profile. Accordingly, the intensity...
7361551 Method for making an integrated circuit having an embedded non-volatile memory  
A method for forming a portion of a semiconductor device includes: patterning gate stack layers overlying a substrate into a gate stack; implanting dopant ions to form shallow source/drain...
7361545 Field effect transistor with buried gate pattern  
A field effect transistor includes a buried gate pattern that is electrically isolated by being surrounded by a tunneling insulating film. The field effect transistor also includes a channel region...
7361543 Method of forming a nanocluster charge storage device  
An integrated circuit and method of forming an integrated circuit having a memory portion minimizes an amount of oxidation of nanocluster storage elements in the memory portion. A first region of...
7354824 Fabrication method of non-volatile memory  
A method for fabricating a non-volatile memory is provided. A dielectric layer, a first conductive layer, and a mask layer are formed sequentially on a substrate and then patterned to form a number...
7352035 Flash memory devices and methods for fabricating flash memory devices  
A flash memory device includes a cell string having a plurality of cell transistors connected in series, and a string selection transistor and a ground selection transistor connected to both ends...
7348282 Forming method of gate insulating layer and nitrogen density measuring method thereof  
A method of forming a gate insulating layer and nitrogen density measuring method thereof, by which a transistor having enhanced electric characteristics can be fabricated without employing...
7341914 Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate  
A method for forming a semiconductor device includes forming a first gate electrode over a semiconductor substrate, wherein the first gate electrode comprises silicon and forming a second gate...
7339226 Dual-level stacked flash memory cell with a MOSFET storage transistor  
The present invention is a dual-level flash memory cell design that stores 3 or more bits of information per transistor. The dual-level memory cell stores two lower bits in a first level and stores...
7338860 Methods of forming non-volatile memory device having floating gate  
Embodiments of the present invention are directed to methods for forming non-volatile memory devices. A substrate is provided that has a cell region, a first peripheral region, and second...
7338856 Double-doped polysilicon floating gate  
The present invention provides a method and apparatus for forming a double-doped polysilicon floating gate in a semiconductor memory element. The method includes forming a first dielectric layer on...
7335558 Method of manufacturing NAND flash memory device  
A method of manufacturing a NAND flash memory device, including the steps of providing a semiconductor substrate in which a cell region and a select transistor region are defined; simultaneously...
7332408 Isolation trenches for memory devices  
Methods and apparatus are provided. A first dielectric plug is formed in a portion of a trench that extends into a substrate of a memory device so that an upper surface of the first dielectric plug...
7326616 Semiconductor integrated circuit device and a method of manufacturing the same  
Manufacturing technique for an IC device which includes forming the first conductor film over a memory cell forming region and over a peripheral circuit forming region of a semiconductor substrate,...
7326615 Method for manufacturing electronic non-volatile memory devices integrated in a semiconductor substrate  
A method manufactures a non-volatile memory device on a semiconductor substrate that includes a matrix of memory cells and associated circuitry. The method includes: forming a filling dielectric...
7319058 Fabrication method of a non-volatile memory  
A fabrication method for a non-volatile memory is provided. To fabricate the non-volatile memory, a plurality of first trenches and second trenches are formed in a substrate, wherein the second...
7314797 Semiconductor device and its manufacturing method  
A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a...
7306990 Information storage element, manufacturing method thereof, and memory array  
An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity ( 6 ), and a floating gate...
7303950 Semiconductor device, method of manufacturing same and method of designing same  
A partial oxide film ( 31 ) with well regions formed therebeneath isolates transistor formation regions in an SOI layer ( 3 ) from each other. A p-type well region ( 11 ) is formed beneath part of...
7297599 Method of fabricating semiconductor device  
A method of fabricating a semiconductor device includes forming on a semiconductor substrate a gate electrode with a gate insulating film being interposed between the substrate and the electrode,...
7297594 Non-volatile semiconductor memory device and method of manufacturing the same  
A non-volatile semiconductor memory device includes a semiconductor substrate, a memory cell array formed on the semiconductor substrate, and including a first gate insulator having a first...
7294888 CMOS-compatible non-volatile memory cell with lateral inter-poly programming layer  
An electrically erasable programmable read-only memory (“CMOS NON-VOLATILE MEMORY”) cell is fabricated using standard CMOS fabrication processes. First and second polysilicon gates are...
7294548 Semiconductor device and fabricating method thereof  
A method of fabricating a semiconductor device is described. A substrate having a memory cell region and a high voltage circuit region are provided. First and second source/drain regions are formed...
7291546 Method and apparatus for reducing charge loss in a nonvolatile memory cell  
A method of fabricating a non-volatile memory cell on a semiconductor substrate is disclosed. An area of a first region of the semiconductor substrate designated for a layer of floating polysilicon...
7288456 Semiconductor device and method for fabricating the same  
A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper...
7285464 Nonvolatile memory cell comprising a reduced height vertical diode  
A nonvolatile memory cell according to the present invention comprises a bottom conductor, a semiconductor pillar, and a top conductor. The semiconductor pillar comprises a junction diode,...
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