Patents in Class 438/258

Matches 1 - 50 out of 795

Match	Document	Document Title
1	7622307	Semiconductor devices having a planarized insulating layer and methods of forming the same A semiconductor device includes at least one phase-change pattern disposed on a semiconductor substrate. A planarized capping layer, a planarized protecting layer, and a planarized insulating layer...
2	7619278	Semiconductor memory device A semiconductor-memory device that reduces leak off due to miniaturization of memory cells, and comprises as a single unit cell: a substrate 1 having a trench section 1 a ; a selector gate 3 ...
3	7615448	Method of forming low resistance void-free contacts A plug is formed by depositing a first material to partially fill an opening, leaving an unfilled portion with a lower aspect ratio than the original opening. A second material is then deposited to...
4	7611948	Methods of forming non-volatile memory device A method of forming a non-volatile memory device includes forming first mask patterns, which can have relatively large distances therebetween. A distance regulating layer is formed that conformally...
5	7611947	Method of manufacturing semiconductor device A method of manufacturing a semiconductor device of the present invention consists of forming a trench in a trench-type cell transistor region; forming a gate insulating film and a gate material...
6	7608507	NAND flash memory devices and methods of fabricating the same A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string,...
7	7608506	Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures A semiconductor structure for a dynamic random access memory (DRAM) cell array that includes a plurality of vertical memory cells built on a semiconductor-on-insulator (SOI) wafer and a body...
8	7605036	Method of forming floating gate array of flash memory device The method of forming a floating gate array of a flash memory device includes: (a) forming a plurality of device isolations, which define active device regions, in a semiconductor substrate, the...
9	7601591	Method of manufacturing sidewall spacers on a memory device, and device comprising same The present invention is generally directed to a method of manufacturing sidewall spacers on a memory device, and a memory device comprising such sidewall spacers. In one illustrative embodiment,...
10	7601590	Electronic memory circuit and related manufacturing method An electronic memory circuit comprises a matrix of EEPROM memory cells. Each memory cell includes a MOS floating gate transistor and a selection transistor. The matrix includes a plurality of rows...
11	7598139	Single chip data processing device with embedded nonvolatile memory and method thereof A device is described comprising a substrate of a first conductivity type having a first dopant concentration, a first well formed in the substrate, a second well of the first conductivity type...
12	7595237	Non-volatile memory cell with a hybrid access transistor A non-volatile memory cell includes an access and a storage transistor coupled in series. The memory cell is formed on a thin gate well tailored for transistors with thin gate dielectrics. The...
13	7592223	Methods of fabricating non-volatile memory with integrated select and peripheral circuitry and post-isolation memory cell formation Non-volatile semiconductor memory devices with dual control gate memory cells and methods of forming the same using integrated select and peripheral circuitry formation are provided. Strips of...
14	7589373	Semiconductor device The present invention provides a semiconductor device, which includes a substrate and a sensing memory device. The substrate includes a metal-oxide-semiconductor transistor having a gate. The...
15	7589006	Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes forming a plurality of gate lines on a substrate, forming a first cell spacer on the gate lines, forming a second cell spacer on the first...
16	7585726	Nonvolatile semiconductor memory devices and the fabrication process of them The present invention enables to avoid a reduction in coupling ratio in a nonvolatile semiconductor memory device. The reduction is coupling ratio is caused due to difficulties in batch forming of...
17	7582529	Methods of fabricating non-volatile memory with integrated peripheral circuitry and pre-isolation memory cell formation Non-volatile semiconductor memory devices with dual control gate memory cells and methods of forming the same using integrated peripheral circuitry formation are provided. Strips of charge storage...
18	7582528	Method of fabricating a flash memory device In a method of fabricating a flash memory device, an interlayer dielectric layer is formed on a semiconductor substrate. The interlayer dielectric layer is etched to form first contact holes...
19	7579647	Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration First and second semiconductor regions are formed apart from each other on a semiconductor body. A stacked gate is formed on the semiconductor body between the first and second semiconductor...
20	7579239	Method for the manufacture of a non-volatile memory device and memory device thus obtained The present invention relates to a method for processing of a non-volatile memory cell ( 50 ) which comprises a double gate stack and a single access gate. The method combines a way of processing...
21	7579237	Nonvolatile memory device and method of manufacturing the same A method of manufacturing a nonvolatile memory device includes forming a plurality of device isolation regions in a semiconductor substrate, forming a tunneling insulation layer on the...
22	7575973	Method of making three dimensional NAND memory A method of making a monolithic, three dimensional NAND string including a first memory cell located over a second memory cell, includes growing a semiconductor active region of second memory cell,...
23	7572699	Process of forming an electronic device including fins and discontinuous storage elements An electronic device can include a substrate including a fin lying between a first trench and a second trench, wherein the fin is no more than approximately 90 nm wide. The electronic device can...
24	7569881	Semiconductor integrated circuit device with reduced leakage current The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a...
25	7564093	Semiconductor device A semiconductor device comprises static random access memory (SRAM) cells formed in a semiconductor substrate, first deep trenches isolating each boundary of an n-well and a p-well of the SRAM...
26	7563676	NOR-type flash memory cell array and method for manufacturing the same Disclosed is a non-volatile (e.g., NOR type flash) memory cell array and a method for manufacturing the same. The memory cell array includes a plurality of isolation layers on a semiconductor...
27	7563662	Processes for forming electronic devices including non-volatile memory A process for forming an electronic device can be performed, such that as little as one gate electric layer may be formed within each region of the electronic device. In one embodiment, the...
28	7560342	Method of manufacturing a semiconductor device having a plurality of memory and non-memory devices Embodiments relate to a method of manufacturing a semiconductor device that may simplify a manufacturing process and may reduce process costs. According to embodiments, the method may include...
29	7560339	Nonvolatile memory cell comprising a reduced height vertical diode A nonvolatile memory cell according to the present invention comprises a bottom conductor, a semiconductor pillar, and a top conductor. The semiconductor pillar comprises a junction diode,...
30	7560335	Memory device transistors Method and device embodiments are described for fabricating MOSFET transistors in a semiconductor also containing non-volatile floating gate transistors. MOSFET transistor gate dielectric smiling,...
31	7557405	High-density nonvolatile memory An improved nonvolatile memory cell made by a method for fabricating a three dimensional monolithic memory with increased density. The memory cell includes at least a part of a first conductor, a...
32	7557004	Method for fabricating semiconductor device The method for fabricating the semiconductor device includes the steps of: forming an insulating film 20 , a conductive film 22 and an insulating film 24 over a semiconductor substrate 10 ...
33	7553730	Methods of fabrication employing nanoscale mandrels Synthetic nanopore fabrication methods and structures are provided. Nanoscale transistor fabrication methods and structures are provided.
34	7553721	Flash memory devices and methods of fabricating the same Flash memory devices and methods for fabricating the same. In one example embodiment, a method of fabricating a flash memory includes various acts. First, a tunnel oxide layer is formed on an...
35	7550350	Methods of forming flash memory device The present disclosure relates to methods of forming a flash memory device. A plurality of cells, a plurality of select transistors, and a transistor are formed over a semiconductor substrate...
36	7550349	Method for forming gate dielectric layers A method for forming gate dielectric layers having different thicknesses is provided, The method includes forming a lower oxide layer, a nitride layer, and an upper oxide layer on a semiconductor...
37	7550348	Source side injection storage device with spacer gates and method therefor A storage device structure ( 10 ) has two bits of storage per control gate ( 34 ) and uses source side injection (SSI) to provide lower programming current. A control gate ( 34 ) overlies a drain...
38	7550347	Methods of forming integrated circuit device gate structures Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions...
39	7550344	Semiconductor device and method for fabricating the same A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper...
40	7547602	Semiconductor integrated circuit device and its manufacturing method A method of manufacturing a semiconductor integrated circuit device is provided including providing a substrate with projecting island regions formed in stripes, with first regions of the substrate...
41	7544569	Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second...
42	7544567	Method of manufacturing a flash memory device In a method of manufacturing an SONOS type flash memory device, a first oxide layer and a buffer poly layer are formed over a surface of a semiconductor except for a memory cell region of a cell...
43	7537993	Methods of forming semiconductor devices having tunnel and gate insulating layers A semiconductor device includes a semiconductor substrate having a surface, buried isolation regions protruding from the surface of the semiconductor substrate, and a first insulating layer on the...
44	7528036	Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main...
45	7521317	Method of forming a semiconductor device and structure thereof A method for forming a semiconductor device includes providing a semiconductor substrate comprising silicon, forming a layer of dielectric on the surface of the semiconductor substrate, forming a...
46	7518176	Programmable nonvolatile memory and semiconductor integrated circuit device Distance λm between a floating gate and a drain contact of a floating gate transistor forming a memory cell is set to be greater than a distance λ determined based on a minimum design dimension...
47	7514321	Method of making three dimensional NAND memory A method of making a monolithic, three dimensional NAND string, includes forming a semiconductor active region of a first memory cell over a semiconductor active region of a second memory cell. The...
48	7511333	Nonvolatile memory cell with multiple floating gates and a connection region in the channel A memory cell ( 110 ) has a plurality of floating gates ( 120 L, 120 R). The channel region ( 170 ) comprises a plurality of sub-regions ( 220 L, 220 R) adjacent to the respective floating gates,...
49	7510943	Semiconductor devices and methods of manufacture thereof A first gate dielectric of a first transistor is disposed over a workpiece in a first region, and a second gate dielectric of a second transistor is disposed over the workpiece in a second region....
50	7510932	Semiconductor devices having a field effect transistor and methods of fabricating the same A semiconductor device having a field effect transistor and a method of forming the same are provided. The semiconductor device preferably includes a device active pattern disposed on a...

Matches 1 - 50 out of 795

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