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7618863 |
Method of fabricating flash memory device with increased coupling ratio
A method of fabricating a flash memory which increases a coupling ratio between a floating gate and a control gate in a cell. The method comprises sequentially forming a tunnel oxide film, and...
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7618862 |
Flash memory device and method for manufacturing the same
A method for manufacturing a flash memory device includes: a) forming a stack gate pattern composed of a tunnel oxide layer, a floating gate, ONO layers, and a control gate on a semiconductor...
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7618861 |
Method of manufacturing non-volatile memory device using multiple element isolation regions and perpendicular extensive device regions
Separate first and second floating gates for attracting carriers transferring in a transistor structure having a channel region and first and second main electrode regions into charge storage films...
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7615448 |
Method of forming low resistance void-free contacts
A plug is formed by depositing a first material to partially fill an opening, leaving an unfilled portion with a lower aspect ratio than the original opening. A second material is then deposited to...
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7615447 |
Composite charge storage structure formation in non-volatile memory using etch stop technologies
Semiconductor-based non-volatile memory that includes memory cells with composite charge storage elements is fabricated using an etch stop layer during formation of at least a portion of the...
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7615446 |
Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof
In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor...
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7615445 |
Methods of reducing coupling between floating gates in nonvolatile memory
A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected...
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7615437 |
Non-volatile memory device and method of manufacturing the same
A method of manufacturing a non-volatile memory device includes sequentially depositing a first insulation layer, a charge storage layer, and a second insulation layer on a substrate, forming a...
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7615436 |
Two mask floating gate EEPROM and method of making
There is provided a floating gate transistor, such as an EEPROM transistor, and method of making the transistor using two masking steps. The method of making a transistor includes patterning a...
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7612401 |
Non-volatile memory cell
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film...
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7611946 |
Method of fabricating a non-volatile memory device
A method of fabricating a non-volatile memory device prevents the threshold voltage of a program-inhibited cell from rising by preventing hot carriers, generated in a semiconductor substrate near a...
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7608507 |
NAND flash memory devices and methods of fabricating the same
A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string,...
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7608506 |
Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
A semiconductor structure for a dynamic random access memory (DRAM) cell array that includes a plurality of vertical memory cells built on a semiconductor-on-insulator (SOI) wafer and a body...
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7608505 |
Method of manufacturing non-volatile memory device
A method of manufacturing a non-volatile memory device includes the steps of: defining an active region on a semiconductor substrate; forming a charge storage layer on the active region; forming a...
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7608504 |
Memory and manufacturing method thereof
A memory is provided. The memory includes a substrate, a number of parallel bit lines, a number of parallel word lines and at least a oxide-nitride-oxide (ONO) structure. The bit lines are disposed...
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7605430 |
Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same
A nonvolatile memory device includes a semiconductor substrate and a device isolation layer on the semiconductor substrate. A fin-shaped active region is formed between portions of the device...
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7605036 |
Method of forming floating gate array of flash memory device
The method of forming a floating gate array of a flash memory device includes: (a) forming a plurality of device isolations, which define active device regions, in a semiconductor substrate, the...
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7604690 |
Composite material for ultra thin membranes
A composite material that may be used for a thin membrane is disclosed. This composite material includes first material that has a quasi-periodic system of vertical trenches (nanotrenches) with...
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7601589 |
Method of manufacturing flash memory device
The invention provides a method of manufacturing a flash memory device. Nitride film spacers are formed on sidewalls of protruded isolation films. A recess is formed in a semiconductor substrate by...
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7601588 |
Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the same
In a method of forming a device isolation layer for minimizing a parasitic capacitor and a non-volatile memory device using the same, a trench is formed on a substrate. A first insulation layer is...
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7598564 |
Non-volatile memory devices and methods of forming non-volatile memory devices
A non-volatile memory device including a barrier spacer that serves to protect a control gate, including a metal layer, from damage that may result from exposure to a cleaning solution and/or...
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7598155 |
Method of manufacturing an overlay mark
A method of manufacturing an overlay mark is provided. Two first X-direction isolation structures, two first Y-direction isolation structures, two second X-direction isolation structures, and two...
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7598141 |
Method of fabricating static random access memory
A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the...
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7598140 |
Method of producing a semiconductor device having an oxide film
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the...
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7598136 |
Image sensor and related fabrication method
An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area,...
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7598133 |
Semiconductor memory device and a method of manufacturing the same
A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly...
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7595532 |
Semiconductor memory devices and methods of forming the same
A semiconductor memory device includes a semiconductor substrate including an insulating layer, a charge storage region of a first conductivity type on the insulating layer, and an insulating film...
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7595262 |
Manufacturing method for an integrated semiconductor structure
A manufacturing method for an integrated semiconductor structure and a corresponding semiconductor structure is disclosed. The method includes forming a peripheral circuitry in a peripheral device...
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7595252 |
Method of manufacturing a semiconductor memory device
A method of manufacturing a semiconductor device comprises providing a semiconductor substrate, forming trenches in predetermined regions of the semiconductor substrate, forming isolation...
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7595231 |
Semiconductor device and its manufacture
In a logic area, impurities are doped into the gate electrode and the source/drain diffusion regions of a MIS transistor. Thereafter in a memory cell area, word lines are patterned, source/drain...
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7595218 |
Programmable resistive RAM and manufacturing method
Programmable resistive RAM cells have a resistance that depends on the size of the programmable resistive elements. Manufacturing methods and integrated circuits for programmable resistive elements...
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7592271 |
Method of fabricating a flash memory device
A method of fabricating a flash memory device, in which a pre-metal dielectric layer, a hard mask layer, and a first etch mask pattern are sequentially formed over a semiconductor substrate; an...
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7592226 |
Method for manufacturing non-volatile semiconductor memory device, and non-volatile semiconductor memory device
An isolation oxide film whose upper surface is higher than a surface of a substrate is formed in the substrate. A silicon oxide film is formed on the substrate between the isolation oxide films. A...
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7592222 |
Method of fabricating flash memory device
The present invention relates to a method of fabricating a flash memory device. According to a method of fabricating a flash memory device in accordance with an aspect of the present invention, a...
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7592221 |
Semiconductor memory device and manufacturing method thereof
Disclosed is a semiconductor memory device including a plurality of diffusion regions, select gates, word lines, and common diffusion regions. The plurality of diffusion regions are extended in the...
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7589375 |
Non-volatile memory devices including etching protection layers and methods of forming the same
A non-volatile memory device includes a semiconductor substrate including a cell array region and a peripheral circuit region. A first cell unit is on the semiconductor substrate in the cell array...
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7589374 |
Semiconductor device and related fabrication method
Embodiments of the invention provide a semiconductor device and a related method of fabricating a semiconductor device. In one embodiment, the invention provides a semiconductor device comprising a...
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7588986 |
Method of manufacturing a semiconductor device
According to an exemplary embodiment of the present invention, a method of manufacturing a semiconductor device having active regions including a SONOS device region, a high voltage device region,...
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7588983 |
EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same
Provided are an EEPROM cell, an EEPROM device, and methods of manufacturing the EEPROM cell and the EEPROM device. The EEPROM cell is formed on a substrate including a first region and a second...
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7588982 |
Methods of forming semiconductor constructions and flash memory cells
Some embodiments include methods of forming flash memory cells and semiconductor constructions, and some embodiments include semiconductor constructions. Some embodiments may include a method in...
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7588981 |
Semiconductor device and manufacturing method thereof
In a thin film transistor, a metallic element promoting crystallization of an amorphous silicon film is effectively removed and the productivity is improved. By using a silicon film containing an...
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7585755 |
Method of fabricating non-volatile memory device
A method of fabricating a non-volatile memory device according to example embodiments may include forming a semiconductor layer on a substrate. A plurality of lower charge storing layers may be...
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7585746 |
Process integration scheme of SONOS technology
In an non-limiting example, we provide a substrate having a cell region, and non-cell regions. We form a tunneling dielectric layer, a charge storing layer, a top insulating layer (e.g., ONO), over...
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7585726 |
Nonvolatile semiconductor memory devices and the fabrication process of them
The present invention enables to avoid a reduction in coupling ratio in a nonvolatile semiconductor memory device. The reduction is coupling ratio is caused due to difficulties in batch forming of...
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7585725 |
Use of dilute steam ambient for improvement of flash devices
The present invention provides a flash memory integrated circuit and a method for fabricating the same. The method includes etching a gate stack that includes an initial oxide layer directly in...
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7585724 |
FLASH memory device and method of manufacture
A FLASH memory device is provided including a plurality of first floating gates formed over a gate oxide layer formed over a substrate, the first group of floating gates being formed using a...
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7585711 |
Semiconductor-on-insulator (SOI) strained active area transistor
A selectively strained MOS device such as selectively strained PMOS device making up an NMOS and PMOS device pair without affecting a strain in the NMOS device the method including providing a...
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7582930 |
Non-volatile memory and method for manufacturing non-volatile memory
A coupling oxide film is formed on a silicon substrate, a polysilicon film is further formed thereupon, and a low-temperature oxide film is deposited to a thickness of 10 nm, for example. Next, a...
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7582530 |
Managing floating gate-to-floating gate spacing to support scalability
Formation techniques are utilized to increase the space or distance between floating gates of a memory array of floating gate transistors. In at least some embodiments, floating gates are first...
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7582527 |
Method for fabricating semiconductor device
Method for fabricating a semiconductor device, including the steps of providing a first conductive type semiconductor substrate having a cell region and a logic region defined thereon, forming a...
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