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9041092 Semiconductor device and method for producing the same  
A semiconductor device includes a pillar-shaped silicon layer including a first diffusion layer, a channel region, and a second diffusion layer formed in that order from the silicon substrate...
9040375 Method for processing a carrier, method for fabricating a charge storage memory cell, method for processing a chip, and method for electrically contacting a spacer structure  
A method for processing a carrier accordance with various embodiments may include: forming a structure over the carrier, the structure including at least two adjacent structure elements arranged...
9023700 Method and apparatus for single step selective nitridation  
Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having...
9024425 Three-dimensional memory comprising an integrated intermediate-circuit die  
The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least an integrated intermediate-circuit die comprising both a...
9018690 Split-gate memory cell with substrate stressor region, and method of making same  
A memory device, and method of make same, having a substrate of semiconductor material of a first conductivity type, first and second spaced-apart regions in the substrate of a second conductivity...
9012320 Three-dimensional semiconductor memory devices and methods of fabricating the same  
Example embodiments relate to a three-dimensional semiconductor memory device including an electrode structure on a substrate, the electrode structure including at least one conductive pattern on...
9012307 Two terminal resistive switching device structure and method of fabricating  
A method of forming a two terminal device. The method includes forming a first dielectric material overlying a surface region of a substrate. A bottom wiring material is formed overlying the first...
9012318 Etching polysilicon  
Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.
9013303 Product management system  
One feature of the present invention is a product management system that includes a package body for packing a product attached with an ID tag, and a reader/writer. The ID tag includes a thin film...
9012971 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a channel layer protruding from a substrate and having protrusions extending from a sidewall thereof. Floating gates surrounding the channel layer are provided...
8999784 Methods of manufacturing semiconductor device  
A method of manufacturing a semiconductor device includes forming first auxiliary patterns, alternately forming first material layers and second material layers on the sidewalls of the first...
8993397 Pillar structure for memory device and method  
A method of forming a memory device. The method provides a semiconductor substrate having a surface region. A first dielectric layer is formed overlying the surface region of the semiconductor...
8994095 Semiconductor memory device with a buried drain and its memory array  
A semiconductor memory device with a buried drain is provided. The device comprises a semiconductor substrate (107); one drain region (108) of a first doping type; two source regions (101a, 101b)...
8993453 Method of fabricating a nonvolatile charge trap memory device  
A method for fabricating a nonvolatile charge trap memory device and the device are described. In one embodiment, the method includes providing a substrate in an oxidation chamber, wherein the...
8987701 Phase transition memories and transistors  
In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and...
8987119 Pillar devices and methods of making thereof  
A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the...
8987045 Methods of forming a memory device  
Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of...
8980709 Resistive-switching memory element  
A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores...
8981449 Extremely thin semiconductor on insulator (ETSOI) logic and memory hybrid chip  
A method of forming a semiconductor device that includes providing a logic device on a semiconductor on insulating layer of a transfer substrate. The transfer substrate may further include a...
8981331 Memory cells having storage elements that share material layers with steering elements and methods of forming the same  
In some embodiments, a memory cell is provided that includes a metal-insulator-metal stack and a steering element coupled to the metal-insulator-metal stack. The metal-insulator-metal stack...
8980752 Method of forming a plurality of spaced features  
A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different...
8981452 Methods and devices for forming nanostructure monolayers and devices including such monolayers  
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in...
8975131 Self-aligned method of forming a semiconductor memory array of floating gate memory cells with single poly layer  
A method of forming a semiconductor memory cell that includes forming the floating and control gates from the same poly layer. Layers of insulation, conductive and second insulation material are...
8975706 Gate stacks including TaXSiYO for MOSFETS  
Provided are field effect transistor (FET) assemblies and methods of forming thereof. An FET assembly may include a dielectric layer formed from tantalum silicon oxide and having the atomic ratio...
8975114 Method for forming metal oxides and silicides in a memory device  
Embodiments of the invention generally relate to memory devices and methods for fabricating such memory devices. In one embodiment, a method for fabricating a resistive switching memory device...
8975684 Methods of forming non-volatile memory devices having air gaps  
Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate...
8969940 Method of gate strapping in split-gate memory cell with inlaid gate  
A process integration is disclosed for fabricating non-volatile memory (NVM) cells having patterned select gates (211, 213), charge storage layers (219), inlaid control gates (223, 224), and...
8962444 Semiconductor device and method of manufacturing the same  
Methods of manufacturing a semiconductor device are provided. The method includes forming a poly-silicon layer doped with first p-type dopants on a substrate, etching the poly-silicon layer and...
8963230 Semiconductor storage device and manufacturing method of semiconductor storage device  
According to one embodiment, a columnar semiconductor, a floating gate electrode formed on a side surface of the columnar semiconductor via a tunnel dielectric film, and a control gate electrode...
8962424 N-type silicon solar cell with contact/protection structures  
A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric...
8962416 Split gate non-volatile memory cell  
A method of making a semiconductor structure uses a substrate having a background doping of a first type. A gate structure has a gate dielectric on the substrate and a select gate layer on the...
8962432 Semiconductor device with self aligned end-to-end conductive line structure and method for forming the same  
A method for forming semiconductor devices using damascene techniques provides self-aligned conductive lines that have an end-to-end spacing less than 60 nm without shorting. The method includes...
8957469 Semiconductor storage device and manufacturing method of semiconductor storage device  
A semiconductor storage device according to an embodiment comprises a memory cell string in which a plurality of memory cells each having a gate are serially connected to each other. A selective...
8952484 Non-volatile memory having isolation structures in and above a substrate and manufacturing method thereof  
A non-volatile memory and a manufacturing method thereof are provided. The non-volatile memory includes a substrate, a gate structure, a first doped region, a second doped region and a pair of...
8951861 Methods of making a high-density nonvolatile memory  
Methods are provided for forming a monolithic three dimensional memory array. An example method includes: (a) forming a first plurality of substantially parallel, substantially coplanar conductors...
8951864 Split-gate device and method of fabricating the same  
A semiconductor device includes a substrate; a storage element disposed over the substrate in a first region; a control gate disposed over the storage element; a high-k dielectric layer disposed...
8952493 Memory cell device and method of manufacture  
According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material...
8952444 Semiconductor storage device and manufacturing method thereof  
A semiconductor storage device according to an embodiment comprises active areas on a semiconductor substrate. An element isolation is arranged between the active areas and filled by an insulating...
8951860 Manufacturing method of semiconductor device  
The present invention improves the production yield of a semiconductor device having nonvolatile memory cells of a split gate structure. The level difference of a lower layer resist film with...
8945997 Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same  
Integrated circuits and methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit having a split-gate nonvolatile memory device includes...
8946017 Method of making a TFT charge storage memory cell having high-mobility corrugated channel  
Numerous other aspects are provided a method for making a nonvolatile memory cell. The method includes forming a non-planar dielectric structure, and conformally depositing a semiconductor layer...
8946021 Nonvolatile semiconductor memory device and method for manufacturing the same  
On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon...
8940604 Nonvolatile memory comprising mini wells at a floating potential  
The disclosure relates to an integrated circuit comprising a nonvolatile memory on a semiconductor substrate. The integrated circuit comprises a doped isolation layer implanted in the depth of the...
8941168 Semiconductor device including a multilayered interelectrode insulating film  
A semiconductor device includes an element isolation region having an element isolation insulating film therein; an active region delineated by the element isolation region; agate insulating film...
8940623 Process for obtaining an array of nanodots  
A process for obtaining an array of nanodots (212) for microelectronic devices, characterized in that it comprises the following steps: deposition of a silicon layer (210) on a substrate (100,...
8940603 Method of making semiconductor device  
A semiconductor device and method of making a semiconductor device are disclosed. A semiconductor body, a floating gate poly and a source/drain region are provided. A metal interconnect region...
8940645 Radical oxidation process for fabricating a nonvolatile charge trap memory device  
A method for fabricating a nonvolatile charge trap memory device is described. The method includes subjecting a substrate to a first oxidation process to form a tunnel oxide layer overlying a...
8936984 3-D nonvolatile memory device and method of manufacturing the same  
A three-dimensional (3-D) nonvolatile memory device includes channel layers protruding perpendicular to a surface of a substrate, interlayer insulating layers and conductive layer patterns...
8936983 Method of fabricating a semiconductor memory device  
A method of fabricating a semiconductor device according to present invention includes forming a stack layers on a semiconductor substrate having a first area and a second area; forming first...
8932948 Memory cell floating gate replacement  
A NAND flash memory chip is formed by depositing two N-type polysilicon layers. The upper N-type polysilicon layer is then replaced with P-type polysilicon and barrier layer in the array area...