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7358135 Method of forming resistor of flash memory device  
A method of forming a resistor of a flash memory device includes etching an isolation structure provided on a semiconductor substrate to form a first trench. A polysilicon structure is formed...
7358558 Flash memory device  
A floating gate of a flash memory device is formed in a moat formed in an isolation film. Therefore, an electric field applied between a control gate and a channel region upon cycling can be...
7358134 Split gate flash memory cell and manufacturing method thereof  
A split gate flash memory cell includes a substrate having a device isolation structure; a selective gate structure disposed on the substrate; an interlayer dielectric layer having an opening...
7358129 Nonvolatile semiconductor memory device and a method of the same  
A reduction in size nonvolatile semiconductors for use in a memory device and an increase in the capacity thereof are promoted. Each memory cell of a flash memory is provided with a field effect...
7354824 Fabrication method of non-volatile memory  
A method for fabricating a non-volatile memory is provided. A dielectric layer, a first conductive layer, and a mask layer are formed sequentially on a substrate and then patterned to form a number...
7354816 Field effect transistor with gate spacer structure and low-resistance channel coupling  
Spacer structures of field effect transistor structures are enhanced at least in sections with immobile charge carriers. The charge accumulated in the spacer structures induces an enhancement zone...
7355239 Fabrication of semiconductor device exhibiting reduced dielectric loss in isolation trenches  
Improved methods of manufacturing semiconductor devices are provided to reduce dielectric loss in isolation trenches of the devices. In one example, a method of manufacturing a semiconductor device...
7351630 Method of manufacturing flash memory device  
A method of manufacturing a flash memory device, including the steps of forming a gate on a semiconductor substrate in which a cell region, a source selection line region, and a drain selection...
7351629 Method of forming non-volatile memory device  
A non-volatile memory device comprises an active region disposed in a predetermined region of a semiconductor substrate, a selection gate electrode crossing over the active region, and a floating...
7351636 Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions  
A method of forming a split-gate non-volatile memory cell can include forming first and second adjacent floating gates self-aligned to a field oxide region therebetween. An oxide layer is formed...
7351631 Flash memories and methods of fabricating the same  
The present disclosure relates to a flash memory including a common source line having a predetermined width formed on a semiconductor substrate, a common source in the semiconductor substrate...
7348237 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7348238 Bottom electrode for memory device and method of forming the same  
Contacts having use in an integrated circuit and exemplary methods of forming the contacts are disclosed. The methods involve forming a conductive cap over a metal plug. The invention can mitigate...
7348241 Cell structure of EPROM device and method for fabricating the same  
Provided are a cell structure of an EPROM device and a method for fabricating the same. The cell structure includes a gate stack, which includes a first floating gate, an insulating pattern...
7348240 Method for forming metal line in flash memory device  
A method for forming a metal line in a flash memory device includes sequentially forming a first inter-layer insulation layer, an etch stop layer, a second inter-layer insulation layer, and a hard...
7348236 Formation of memory cells and select gates of NAND memory arrays  
Apparatus and methods are provided. Floating-gate memory cells and select gates of NAND memory arrays are formed concurrently by anisotropically removing portions of a second conductive layer...
7348239 Semiconductor device and method of manufacturing the same  
A semiconductor device and a method of manufacturing the same, wherein first and second gate electrodes are formed to have a spacer shape. The length of an underlying dielectric film can be...
7344942 Isolation regions for semiconductor devices and their formation  
A hard mask layer is formed and patterned overlying a semiconductor substrate of a semiconductor device. The patterned hard mask layer exposes two or more areas of the substrate for future...
7344946 Structure for amorphous carbon based non-volatile memory  
A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The...
7341912 Split gate flash memory device having self-aligned control gate and method of manufacturing the same  
In a flash memory device, which can maintain an enhanced electric field between a control gate and a storage node (floating gate) and has a reduced cell size, and a method of manufacturing the...
7341910 Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gate  
This invention provides a method for forming a microcrystalline polysilicon layer by using silane or dislane with introducing hydrogen gas. This microcrystalline polysilicon layer can be used as a...
7341913 Method of manufacturing non-volatile memory  
The invention is directed to a method for manufacturing a non-volatile memory. The method comprises steps of forming a mask layer on a substrate. An isolation structure is formed in the mask layer...
7341911 Method of making EEPROM transistor pairs for block alterable memory  
A block alterable memory cell has a select control gate extending from a floating gate region to a drain region. The block alterable memory cell comprises a substrate layer that further includes a...
7338857 Increasing adherence of dielectrics to phase change materials  
A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.
7338860 Methods of forming non-volatile memory device having floating gate  
Embodiments of the present invention are directed to methods for forming non-volatile memory devices. A substrate is provided that has a cell region, a first peripheral region, and second...
7339226 Dual-level stacked flash memory cell with a MOSFET storage transistor  
The present invention is a dual-level flash memory cell design that stores 3 or more bits of information per transistor. The dual-level memory cell stores two lower bits in a first level and stores...
7338859 Non-volatile memory cells having floating gate and method of forming the same  
A non-volatile memory cell having a floating gate and a method of forming the same. The non-volatile memory cell includes a device isolation layer that is formed in a semiconductor substrate and...
7338856 Double-doped polysilicon floating gate  
The present invention provides a method and apparatus for forming a double-doped polysilicon floating gate in a semiconductor memory element. The method includes forming a first dielectric layer on...
7338858 Methods of fabricating nonvolatile memory using a quantum dot  
A method of fabricating a nonvolatile memory using quantum dots is disclosed. An example method sequentially forms a first insulation layer and a second insulation layer on a substrate where a...
7335558 Method of manufacturing NAND flash memory device  
A method of manufacturing a NAND flash memory device, including the steps of providing a semiconductor substrate in which a cell region and a select transistor region are defined; simultaneously...
7335556 Manufacturing method of semiconductor device  
The present invention provides a manufacturing method of a semiconductor device having a semiconductor nonvolatile memory element that is highly reliable and that can increase a variation of a...
7335559 Fabricating method of non-volatile memory  
A non-volatile memory is provided. A substrate has at least two isolation structures therein to define an active area. A well is located in the substrate. A shallow doped region is located in the...
7335557 Semiconductor device of non-volatile memory  
A non-volatile memory semiconductor device includes a first insulation layer, two diffusion regions, a memory gate oxide layer, a first control gate, a second insulation layer, a floating gate of...
7329578 Method of forming floating-gate tip for split-gate flash memory process  
A split-gate flash memory process for improving sharpness and height of a floating-gate tip has steps as follows. Using a dry etching process, a trench is formed in the first polysilicon layer...
7329580 Method of fabricating a semiconductor device having self-aligned floating gate and related device  
A semiconductor device such as a flash memory device having a self-aligned floating gate and a method of fabricating the same is provided. An embodiment of the device includes an isolation layer...
7329577 Method of manufacturing nonvolatile semiconductor storage device  
In a method of manufacturing a nonvolatile semiconductor storage device, an element isolation region is formed in a semiconductor substrate, a tunnel oxide film and a polysilicon layer are...
7329579 Phase changeable memory cells and methods of fabricating the same  
A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared...
7329571 Technique for providing multiple stress sources in NMOS and PMOS transistors  
By combining a plurality of stress inducing mechanisms in each of different types of transistors, a significant performance gain may be obtained, thereby providing enhanced flexibility in adjusting...
7326615 Method for manufacturing electronic non-volatile memory devices integrated in a semiconductor substrate  
A method manufactures a non-volatile memory device on a semiconductor substrate that includes a matrix of memory cells and associated circuitry. The method includes: forming a filling dielectric...
7320913 Methods of forming split-gate non-volatile memory devices  
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased...
7316955 Method of manufacturing semiconductor device  
A flash memory device and method of fabricating the same, wherein a width at the top of a floating gate is narrower than that at the bottom of the floating gate. The area of the floating gate can...
7314785 Display device and manufacturing method thereof  
A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first...
7315057 Split gate non-volatile memory devices and methods of forming same  
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased...
7314796 Methods for reducing wordline sheet resistance  
The present invention is directed to forming memory wordlines having a relatively lower sheet resistance. In one embodiment, a control-gate poly layer including a first and a second poly-Si portion...
7312122 Self-aligned element isolation film structure in a flash cell and forming method thereof  
A self-aligned element isolation film structure in a flash memory cell and a forming method thereof are disclosed. An example method of forming a self-aligned element isolation film structure in a...
7312123 Semiconductor device and a method of manufacturing the same  
A semiconductor device having a nonvolatile memory is reduced in size. In an AND type flash memory having a plurality of nonvolatile memory cells having a plurality of first electrodes, a plurality...
7309627 Method for fabricating a gate mask of a semiconductor device  
A nitride layer of the gate mask for the semiconductor device is deposited at a temperature higher than 750 deg. C so as to release hydrogen from the nitride layer. Alternatively, a nitride layer...
7309630 Method for forming patterned media for a high density data storage device  
Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the...
7309891 Non-volatile and memory semiconductor integrated circuit  
A semiconductor integrated circuit device includes first, second gate electrodes, first, second diffusion layers, contact electrodes electrically connected to the first diffusion layers, a first...
7309629 Method for fabricating semiconductor device  
In a method for fabricating a semiconductor device in which a semiconductor memory element having an ONO film and a CMOS part are formed on a single semiconductor substrate, a CMOS gate-oxidation...
Matches 351 - 400 out of 1787 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >