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7445995 Flash memory structure and fabrication method thereof  
A flash memory structure comprises a semiconductor substrate, a source region, a drain region, a first insulating dielectric layer, a floating gate, a second insulating dielectric layer, and a...
7445992 Method for fabricating cell structure of non-volatile memory device  
A cell structure of a non-volatile memory device, which uses a nitride layer as a floating gate spacer, includes a gate stack and a floating gate transistor formed over a semiconductor substrate....
7443725 Floating gate isolation and method of making the same  
The present invention relates to a method for forming a set of floating gates which are isolated from each other by means of slits, as well as semiconductor devices using the floating gate. The...
7442567 Method for fabricating transflective liquid crystal display  
An exemplary method for fabricating a transflective liquid crystal display is provided. The transflective liquid crystal display includes a substrate ( 200 ) having a transmission region ( 201 )...
7442605 Resistively switching memory  
The present invention relates to a reproducible conditioning during the manufacturing of a resistively switching CBRAM memory cell comprising a first electrode and a second electrode with an active...
7439134 Method for process integration of non-volatile memory cell transistors with transistors of another type  
A method for making a semiconductor device having non-volatile memory cell transistors and transistors of another type is provided. In the method, a substrate is provided having an NVM region, a...
7439132 Semiconductor device comprising capacitor and method of fabricating the same  
A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to...
7439135 Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same  
A structure and method of forming a body contact for an semiconductor-on-insulator trench device. The method including: forming set of mandrels on a top surface of a substrate, each mandrel of the...
7439157 Isolation trenches for memory devices  
A method includes removing a portion of a substrate to define an isolation trench; forming a first dielectric layer on exposed surfaces of the substrate in the trench; forming a second dielectric...
7439082 Conductive memory stack with non-uniform width  
A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element that is sandwiched between the electrodes. The bottom...
7439131 Flash memory device having resistivity measurement pattern and method of forming the same  
A flash memory device has a resistivity measurement pattern and method of forming the same. A trench is formed in an isolation film in a Self-Aligned Floating Gate (SAFG) scheme. The trench is...
7439567 Contactless nonvolatile memory array  
An array of memory cells with non-volatile memory transistors having a compact arrangement of diagonally symmetric floating gates. The floating gates have portions extending in both X and Y...
7439125 Contact structure for a stack DRAM storage capacitor  
A method for fabricating a contact structure for a stack storage capacitor includes forming the contact structure in a node contact region with contact openings, an insulating liner and a...
7435647 NOR-type flash memory device and manufacturing method thereof  
A flash memory device that has a structure capable of preventing gate stack damage, and a method of manufacturing the same, is presented. The method includes forming a first photo resist pattern to...
7435646 Method for forming floating gates within NVM process  
A semiconductor process and apparatus includes forming a semiconductor device by depositing a layer of nitride ( 20 ) over a semiconductor structure ( 10 ), patterning and etching the nitride layer...
7436019 Non-volatile memory cells shaped to increase coupling to word lines  
A non-volatile memory array has word lines coupled to floating gates, the floating gates having an upper portion that is adapted to provide increased surface area, and thereby, to provide increased...
7435645 Dynamic random access memory (DRAM)  
A dynamic random access memory (DRAM) includes a substrate, an active device and a deep trench capacitor. A trench and a deep trench are formed in the substrate. The active device is disposed on...
7435648 Methods of trench and contact formation in memory cells  
Methods of contact formation and memory arrays formed using such methods, which methods include providing a memory array having a plurality of bit lines disposed below a surface of a semiconductor...
RE40532 Non-volatile memory cell and fabrication method  
Memory cell transistors with back-channel isolation are produced without using an SOI substrate. With the word line stack acting as a mask, the semiconductor material is etched on both sides of the...
7432153 Direct tunneling semiconductor memory device and fabrication process thereof  
A direct-tunneling semiconductor memory device includes a device isolation structure formed on a semiconductor substrate, including a device isolation trench and a device isolation insulation film...
7429511 Method of forming a tunneling insulating layer in nonvolatile memory device  
A method of forming a tunneling insulating layer having a size smaller than the size obtained by the resolution of a photolithography process is provided. The method includes the steps of forming a...
7429766 Split gate type nonvolatile memory device  
In a split gate type nonvolatile memory device, a supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue...
7429512 Method for fabricating flash memory device  
A method of fabricating a flash memory device. A DDD ion is implanted into a high voltage PMOS transistor and into source and drain junctions of a cell transistor in order to facilitate a pinch-off...
7427533 Methods of fabricating semiconductor devices including trench device isolation layers having protective insulating layers and related devices  
A method of fabricating a semiconductor device includes forming an active region including opposing sidewalls and a surface therebetween protruding from a substrate. A protective insulating layer...
7427546 Transistor device and method for manufacturing the same  
A transistor device includes a recess in a surface of semiconductor substrate, a gate insulation layer formed over an inner side of the recess, a gate conductor filling the recess in which the gate...
7427537 Semiconductor integrated circuit device and method for manufacturing the same  
In a semiconductor integrated circuit device having a system-on-chip structure in which a DRAM and a logic integrated circuit are mixedly mounted on a chip, a silicide layer is formed on the...
7425482 Non-volatile memory device and method for fabricating the same  
A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a plurality of gate structures on a substrate, each gate structure including a first...
7423312 Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins  
The present invention provides an apparatus and method for a non-volatile memory comprising at least one array of memory cells with shallow trench isolation (STI) regions between bit lines for...
7422939 Semiconductor device having one-time programmable ROM and method of fabricating the same  
A semiconductor device with a one-time programmable (OTP) ROM disposed over a semiconductor substrate including a memory cell area and a peripheral circuit area includes a MOS transistor and an OTP...
7422932 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device includes a semiconductor substrate, a memory cell region which is disposed on the semiconductor substrate and has a transistor array of a stacked gate...
7419869 Semiconductor device and a method for manufacturing the same  
Provided is a manufacturing method of a semiconductor device which has the following steps of forming a plurality of layered patterns obtained by stacking an insulating film, a conductor film for...
7419888 Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same  
In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption...
7419875 Shallow trench isolation in floating gate devices  
The present invention provides a method for manufacturing a floating gate type semiconductor device on a substrate having a surface ( 2 ), and a device thus manufactured. The method...
7416935 Method of manufacturing nonvolatile semiconductor memory device having adjacent selection transistors connected together  
A method of manufacturing a nonvolatile semiconductor memory device, including forming a gate insulating film, a first conductive layer providing floating gates and a mask, in that order, on a...
7416941 Four-bit finfet NVRAM memory device  
A four-bit FinFET memory cell, a method of fabricating a four-bit FinFET memory cell and an NVRAM formed of four-bit FINFET memory cells. The four-bit memory cell including two charge storage...
7416945 Method for forming a split gate memory device  
A method forms a split gate memory device. A layer of select gate material over a substrate is patterned to form a first sidewall. A sacrificial spacer is formed adjacent to the first sidewall....
7416940 Methods for fabricating flash memory devices  
Methods for fabricating a flash memory device are provided. A method comprises forming a plurality of gate stacks overlying a substrate. Each gate stack comprises a charge trapping layer and a...
7416939 Conductive spacers extended floating gates  
A method for manufacturing on a substrate ( 24 ) a semiconductor device with improved floating-gate to control-gate coupling ratio is described. The method comprises the steps of first forming an...
7413953 Method of forming floating gate array of flash memory device  
The method of forming a floating gate array of a flash memory device includes: (a) sequentially forming a tunnel oxide film, a floating gate forming film, a capping oxide film and a first nitride...
7414281 Flash memory with high-K dielectric material between substrate and gate  
A flash memory cell and a method of forming the same are described. The flash memory cell may include a substrate having a source and a drain, a gate element, and a dielectric layer between the...
7413947 Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor  
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor,...
7410870 Methods of forming non-volatile memory devices and devices formed thereby  
Methods of forming non-volatile memory devices include steps to define features that enhance shielding of electronic interference between adjacent floating gate electrodes and improve leakage...
7410871 Split gate type flash memory device and method for manufacturing same  
A split gate type flash memory device and a method of manufacturing the split gate type flash memory device are disclosed. The split gate type flash memory device includes a silicon epitaxial layer...
7410869 Method of manufacturing a semiconductor device  
In a method of manufacturing a semiconductor device such as a flash memory device, an insulating pattern having an opening is formed to partially expose a surface of a substrate. A first silicon...
7411239 Nand flash memory devices and methods of fabricating the same  
A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string,...
7410868 Method for fabricating a nonvolatile memory element and a nonvolatile memory element  
In a method for fabricating a nonvolatile memory element a substrate is provided, a nanomask structure is fabricated on the substrate and a self-assembled monolayer of an organic memory molecule is...
7408220 Non-volatile memory and fabricating method thereof  
A method of fabricating a non-volatile memory is provided. A plurality of columns of isolation structures are formed on a substrate. A plurality of rows of stacked gate structures crossing over the...
7407855 Method of producing semiconductor element and nonvolatile semiconductor memory produced by this method  
In a first embodiment, Tetraethyl Orthosilicate Si(OC2H5)4 is used at the process temperature of 650° C.±5° C. as film forming material, to decrease crystal defects occurring during deposition....
7407856 Method of manufacturing a memory device  
A method of manufacturing a memory device includes defining a field region and an active region in a substrate, forming a field oxide layer on the field region, forming an insulating layer on the...
7407857 Method of making a scalable flash EEPROM memory cell with notched floating gate and graded source region  
An memory device, and method of making same, that includes source and drain regions defining a channel region therebetween. A select gate is formed over and insulated from a first portion of the...
Matches 251 - 300 out of 1789 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >