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7579237 |
Nonvolatile memory device and method of manufacturing the same
A method of manufacturing a nonvolatile memory device includes forming a plurality of device isolation regions in a semiconductor substrate, forming a tunneling insulation layer on the...
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7566611 |
Manufacturing method for an integrated semiconductor structure
The present invention provides a manufacturing method for an integrated semiconductor structure comprising the steps of providing a semiconductor substrate having a plurality of gate stacks in a...
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7560351 |
Integrated circuit arrangement with low-resistance contacts and method for production thereof
An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor...
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7547607 |
Methods of fabricating integrated circuit capacitors using a dry etching process
A method of fabricating an integrated circuit capacitor includes forming a first metal layer on a conductive plug in an interlayer insulating layer on a substrate. At least a portion of the first...
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7531421 |
Semiconductor capacitor structure and method to form same
A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive...
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7517753 |
Methods of forming pluralities of capacitors
The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes anodically etching individual capacitor electrode...
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7511297 |
Phase change memory device and method of fabricating the same
A phase change memory device and a method of fabricating the same are disclosed. The phase change memory device includes a first conductor pattern having a first conductivity type and a sidewall. A...
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7504301 |
Stressed field effect transistor and methods for its fabrication
A stressed field effect transistor and methods for its fabrication are provided. The field effect transistor comprises a silicon substrate with a gate insulator overlying the silicon substrate. A...
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7482221 |
Memory device and method of manufacturing a memory device
The invention relates to a method of forming a memory device comprising a memory cell array and a peripheral portion. When forming the capacitors in the memory cell array, a sacrificial layer is...
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7456065 |
Fabricating method of DRAM cylindrical capacitor
A method of manufacturing dynamic random access memory (DRAM) cylindrical capacitor is provided. A substrate having a polysilicon plug formed therein is provided. A dielectric layer having an...
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7432152 |
Methods of forming HSG layers and devices
A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on...
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7427545 |
Trench memory cells with buried isolation collars, and methods of fabricating same
The present invention relates to semiconductor devices, preferably dynamic random access memory (DRAM) cells, each of which contains at least one trench capacitor with a buried isolation collar....
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7414297 |
Capacitor constructions
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps...
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7413950 |
Methods of forming capacitors having storage electrodes including cylindrical conductive patterns
A capacitor is provided including a storage node contact pad and a storage electrode. The storage electrode includes at least two cylindrical conductive patterns. The at least two cylindrical...
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7407854 |
Method for fabricating capacitor of semiconductor device
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in...
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7405122 |
Methods for fabricating a capacitor
A method for forming a capacitor comprises providing a substrate. A bottom electrode material layer is formed on the substrate. A first mask layer is formed on the bottom electrode material layer....
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7393742 |
Semiconductor device having a capacitor and a fabrication method thereof
In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor...
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7387929 |
Capacitor in semiconductor device and method of manufacturing the same
The present invention relates to a capacitor in semiconductor device and a method of manufacturing the same, wherein, owing to formation of a lower electrode and an upper electrode into a stack...
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7378313 |
Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules
Methods are provided for robust and cost effective techniques to fabricate a semiconductor device having double-sided hemispherical silicon grain (HSG) electrodes for container capacitors. In an...
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7364968 |
Capacitor in semiconductor device and manufacturing method
The capacitor in a semiconductor device includes a substrate, a lower electrode formed over the substrate, a diffusion barrier formed over the lower electrode, a plurality of agglomerates formed...
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7335554 |
Method for fabricating semiconductor
A method for fabricating a semiconductor device includes forming a first trench by etching a substrate already provided with a storage node contact (SNC) region and a bit line contact (BLC) region,...
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7332391 |
Method for forming storage node contacts in semiconductor device
A method for forming storage node contacts in a semiconductor device includes forming an interlayer dielectric layer on a semiconductor substrate provided with transistors; forming a hydrogen...
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7312120 |
Method for obtaining extreme selectivity of metal nitrides and metal oxides
Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H 2 F 2 ....
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7309627 |
Method for fabricating a gate mask of a semiconductor device
A nitride layer of the gate mask for the semiconductor device is deposited at a temperature higher than 750 deg. C so as to release hydrogen from the nitride layer. Alternatively, a nitride layer...
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7276412 |
MIM capacitor of semiconductor device and manufacturing method thereof
In a capacitor of a semiconductor device, a bottom electrode is formed on a substrate and has an uneven top surface. An interlayer insulation layer is formed on the substrate and has a via hole...
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7273779 |
Method of forming a double-sided capacitor
A method of forming a double-sided capacitor using at least one sacrificial structure, such as a sacrificial liner or a sacrificial plug. A sacrificial liner is formed along sidewalls of at least...
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7268039 |
Method of forming a contact using a sacrificial structure
A method of forming a double-sided capacitor using at least one sacrificial structure, such as a sacrificial liner or a sacrificial plug. A sacrificial liner is formed along sidewalls of at least...
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7259061 |
Method for forming a capacitor for an integrated circuit and integrated circuit
Integrated circuits can include an integrated capacitor with a metal alloy layer. Methods for forming such integrated circuits can include providing a substrate, forming a first electrode including...
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7229890 |
Forming integrated circuits using selective deposition of undoped silicon film seeded in chlorine and hydride gas
A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on...
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7226829 |
Method for fabricating semiconductor device
The present invention is related to a method for forming a storage node of a semiconductor device. The method includes the steps of: (a) forming a plurality of bit line patterns, each including a...
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7183153 |
Method of manufacturing self aligned non-volatile memory cells
A method of forming an array of non-volatile memory cells includes forming a plurality of floating gate structures and shaping the plurality of floating gate structures to reduce the width of upper...
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7160785 |
Container capacitor structure and method of formation thereof
Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the...
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7153751 |
Method of forming a capacitor
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A...
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7153740 |
Fabrication of lean-free stacked capacitors
For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first...
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7144773 |
Method for preventing trenching in fabricating split gate flash devices
A method for forming a split gate flash device is provided. In one embodiment, a semiconductor substrate with a dielectric layer formed thereover is provided. A conductor layer is formed overlying...
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7141847 |
DRAM constructions, memory arrays and semiconductor constructions
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture...
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7112503 |
Enhanced surface area capacitor fabrication methods
A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a...
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7109081 |
Capacitor for semiconductor device and method of forming the same
A capacitor for a semiconductor device includes a lower electrode, a dielectric layer formed on a lower electrode, and an upper electrode formed on the dielectric layer. The lower electrode...
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7105405 |
Rugged metal electrodes for metal-insulator-metal capacitors
Thin film metal-insulator-metal capacitors having enhanced surface area are formed by a substituting metal for silicon in a preformed electrode geometry. The resulting metal structures are...
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7101756 |
Methods for enhancing capacitors having roughened features to increase charge-storage capacity
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the...
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7094657 |
Method for protecting against oxidation of a conductive layer in said device
In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment...
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7091101 |
Method of forming a device
A method of forming a device is disclosed. The method includes forming a capacitor, and forming the capacitor includes forming a first electrode. The first electrode includes at least one...
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7091084 |
Ultra-high capacitance device based on nanostructures
The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin...
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7087482 |
Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process...
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7081384 |
Method of forming a silicon dioxide layer
The present invention refers to a method of forming a silicon dioxide layer by thermally oxidizing at least one monocrystalline silicon surface region on a semiconductor substrate. The silicon...
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7074669 |
Semiconductor integrated circuit device with capacitor of crown structure and method of manufacturing the same
A semiconductor integrated circuit device includes a plurality of capacitor elements, which are separated from each other by a first insulating film on a plane. Each of the plurality of capacitor...
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7071508 |
Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A...
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7071058 |
Methods of forming capacitors, and methods of forming DRAM circuitry
Capacitors, DRAM circuitry, and methods of forming the same are described. In one embodiment, a capacitor comprises a first container which is joined with a substrate node location and has an...
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7071056 |
Method of forming a dual-sided capacitor
A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon...
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7041570 |
Method of forming a capacitor
A method of forming a capacitor is disclosed. The method includes forming a first substrate layer, and forming a first electrode on the first substrate layer. The first electrode includes at least...
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