Matches 301 - 350 out of 517 < 1 2 3 4 5 6 7 8 9 10 11 >
Match Document Document Title
6110791 Method of making a semiconductor variable capacitor  
A variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response...
6110776 Method for forming bottom electrode of capacitor  
A method for forming a bottom electrode of a capacitor is provided. A substrate having a conductive region is provided. A first insulation layer, a stop layer and a second insulation layer are...
6110775 Process for fabrication of a dram cell having a stacked capacitor  
A DRAM cell transistor formed on a silicon substrate comprises a first BPSG film, a silicon oxide film as a supporting film laid thereover, a storage node including a contact portion filling a...
6107155 Method for making a more reliable storage capacitor for dynamic random access memory (DRAM)  
A modified method for forming stacked capacitors for DRAMs which circumvents oxide erosion due to misalignment is described. A planar silicon oxide (SiO 2 ) first insulating layer is formed over...
6107138 Method for fabricating a semiconductor device having a tapered contact hole  
A semiconductor device includes: a field oxide layer formed on a semiconductor substrate; a transistor having an active region formed on a semiconductor substrate; an interlayer insulating layer...
6107137 Method of forming a capacitor  
A method of forming a capacitor includes, a) providing a series of alternating first and second layers of semiconductive material over a node location, a first of the first and second layers having...
6107139 Method for making a mushroom shaped DRAM capacitor  
A method of forming a capacitor for a DRAM memory cell is disclosed. The method comprises the steps of forming a crown shaped capacitor being partially filled with oxide. Next, nitride spacers and...
6103565 Semiconductor processing methods of forming capacitors and conductive lines  
A semiconductor processing method of forming a capacitor construction includes, a) providing a pair of electrically conductive lines having respective electrically insulated outermost surfaces; b)...
6103588 Method of forming a contact hole in a semiconductor device  
The present invention includes forming a first conductive layer on a semiconductor substrate, and forming a first dielectric layer on the first conductive layer. After patterning to etch the first...
6100135 Method of forming a crown-fin shaped capacitor for a high density DRAM cell  
The present invention is a method of manufacturing a high density capacitor for use in semiconductor memories. High etching selectivity between BPSG (borophosphosilicate glass) and CVD-oxide...
6100136 Method of fabricating capacitor capable of maintaining the height of the peripheral area of the capacitor  
A method of forming a capacitor. A substrate comprises a cell array area and a peripheral area. A dielectric layer is formed on the substrate. The covering layer is formed on the dielectric layer....
6100134 Method of fabricating semiconductor device  
A method of fabricating a semiconductor device is disclosed for connecting a bit line to a semiconductor substrate in a self-aligned fashion in non-contacting relation to a word line and precluding...
6100156 Method for forming a contact intermediate two adjacent electrical components  
A method for forming a contact intermediate adjacent electrical components including, providing a node to which electrical connections are desired and which is located between two electrical...
6100138 Method to fabricate DRAM capacitor using damascene processes  
The DRAM capacitor fabrication in terms of damascene technology is disclosed. The processes are sequentially formed with word lines, landing pads and first interpoly dielectric (IPD1) layer....
6100139 Method for producing semiconductor device  
Three independent methods for producing a semiconductor device which acts as a monolithic capacitor including a first embodiment having a step for removing SiO 2 particles deposited in space...
6096592 Methods of forming integrated circuit capacitors having plasma treated regions therein  
Methods of forming integrated circuit capacitors include the steps of forming a capacitor comprising first and second electrodes and a dielectric layer between the first and second electrodes, on a...
6093943 Semiconductor device and method of producing the same  
A method of producing a semiconductor device includes the steps of (a) preparing a substrate having a semiconductor element formed in a predetermined region of a surface of the substrate, (b)...
6090680 Manufacturing process for a capacitor  
A method for manufacturing a capacitor, applied to a memory unit including a substrate forming thereon a dielectric layer forming thereon a first conducting layer, includes the steps of a) forming...
6083789 Method for manufacturing DRAM capacitor  
A method for forming a DRAM capacitor whose titanium nitride electrode is fabricated in a sequence of steps that results in a good step-coverage. Moreover, contamination of the titanium nitride...
6080623 Method of manufacturing capacitive element with a non-doped semiconductor film to minimize native oxide formation  
One electrode of a capacitive element is formed by a doped semiconductor film and a non-doped semiconductor film which covers at least part of the doped semiconductor film, and a capacitive...
6080621 Method of manufacturing dynamic random access memory  
A method of forming a DRAM capacitor that utilizes cap layers and spacers to surround the gate and bit line so that the necessary contact openings in a DRAM can be formed in two self-aligned...
6080619 Method for manufacturing DRAM capacitor  
A method for manufacturing a DRAM capacitor is provided to form a lower electrode with a cylindrical profile by using a first stage and a second stage. The stages provide different etching rates in...
6074910 Self-aligned storage node definition in a DRAM that exceeds the photolithography limit  
A method is provided for fabricating a stacked capacitor in a storage node (memory cell) of a dynamic random access memory (DRAM) that exceeds the photolithography limit. A DRAM has an array of...
6074918 Methods of fabrication DRAM transistor cells with a self-aligned storage electrode contact  
A DRAM cell is formed by forming a capped gate line on a substrate, including a gate line insulation layer on the substrate, a gate line on the gate line insulation layer and a gate line cap...
6071773 Process for fabricating a DRAM metal capacitor structure for use in an integrated circuit  
A process for fabricating a DRAM metal capacitor structure, featuring simultaneous formation of specific bit line, and storage node features, has been developed. The DRAM capacitor storage node is...
6063660 Fabricating method of stacked type capacitor  
A fabricating method and a structure of a stacked-type capacitor is provided comprising forming a first dielectric layer having a first via on a semiconductor substrate. A first conductive layer is...
6063548 Method for making DRAM using a single photoresist masking step for making capacitors with node contacts  
A method for forming stacked capacitors for DRAMs using a single photoresist mask and having bottom electrodes self-aligned to node contacts is achieved. A planar silicon oxide (SiO 2 ) first...
6063683 Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells  
The method of the present invention for forming a capacitor on a semiconductor substrate includes the following steps. At first, a first oxide layer is formed over the substrate and a nitride layer...
6060367 Method of forming capacitors  
The method for forming a first electrodes of capacitors on a semiconductor substrate includes the steps as follows. At first, a first dielectric layer is formed. A portion of the first dielectric...
6054360 Method of manufacturing a semiconductor memory device with a stacked capacitor wherein an electrode of the capacitor is shaped using a high melting point metal film  
The method of manufacturing a semiconductor memory device with a stacked capacitor is disclosed. The method is featured by forming an insulating film on semiconductor substrate, forming a high...
6046092 Method for manufacturing a capacitor  
A method for manufacturing a capacitor, applied to a memory unit including a substrate forming thereon a dielectric layer forming thereon a first conducting layer, includes the steps of a) forming...
RE36644 Tapered via, structures made therewith, and methods of producing same  
After formation of the storage poly in a stacked capacitor DRAM, the oxide 1 layer is partially etched to leave a thick oxide deposition in the area of the future bit line contact, upon which the...
6043119 Method of making a capacitor  
The present invention is directed to fabrication of a capacitor formed with a substantially concave shape and having optional folded or convoluted surfaces. The concave shape optimizes surface area...
6040215 Method of manufacturing semiconductor device including memory cell having transistor  
A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor substrate, forming a contact hole in the first insulating film, burying a...
6037212 Method of fabricating a semiconductor memory cell having a tree-type capacitor  
Fabricating a semiconductor memory device with a capacitor includes forming a first insulating layer on a substrate, covering a transfer transistor, and forming a first conducting layer that...
6037217 Method of fabricating a capacitor electrode structure in a dynamic random-access memory device  
An integrated circuit (IC) fabrication method is provided for the fabrication of an electrode structure having an increased surface area for a double-crown type of capacitor in a dynamic...
6037213 Method for making cylinder-shaped capacitors for dynamic random access memory  
A method for making cylinder-shaped stacked capacitors for DRAMs is described. A planar first insulating layer is formed over device areas. An etch-stop layer, a second insulating layer, and a...
6037214 Method of fabricating a capacitor  
A method for fabricating a capacitor of a memory cell in a dynamic random access memory, including forming a branch-like lower electrode, a dielectric film, and a upper electrode. The lower...
6033919 Method of forming sidewall capacitance structure  
A capacitive structure on an integrated circuit and a method of making the same are disclosed, which is particularly useful in random-access memory devices. Generally, the method of the present...
6030879 Method of reducing particles during the manufacturing of fin or cylinder capacitors on a wafer  
The present invention is a method for reducing particles during the manufacturing of fin or cylinder capacitors on a wafer. This invention utilizes a negative photoresist wafer edge exposure...
6027969 Capacitor structure for a dynamic random access memory cell  
A method for increasing the surface area, and thus the capacitance of a DRAM, stacked capacitor structure, has been developed. A storage node electrode, incorporating branches of polysilicon, is...
6027967 Method of making a fin-like stacked capacitor  
A method of making a capacitor comprising providing a space extending between a pair of gate stacks on a semiconductor substrate, the space exposing a charge conducting region on the semiconductor...
6027968 Advanced damascene planar stack capacitor fabrication method  
Capacitor storage charge can be increased by increasing storage node area. A high aspect surface ratio stack capacitor is produced without increasing overall cell dimensions. The node is formed...
6025247 Method for manufacturing capacitor structure of dynamic memory cell  
A method is disclosed to manufacture a capacitor structure having a high capacitance and a flat topography on a semiconductor device. The method includes steps of: (a) forming a first insulating...
6025246 Methods for fabricating microelectronic capacitor structures  
A method of fabricating a capacitor includes the steps of forming a layer of a conductive material on a substrate, and forming a patterned oxidation resisting layer on the conductive layer thereby...
6022772 Stacked capacitor having a corrugated electrode  
In a semiconductor device, such as a memory cell, including a capacitor, a corrugated electrode is used as a lower electrode of the capacitor and is covered with an insulation film to be opposed to...
6020236 Method to form capacitance node contacts with improved isolation in a DRAM process  
A method to form capacitance node contacts with improved isolation in a DRAM process is described. An isolation layer is formed on a semiconductor substrate. A first contact hole is formed and...
6020234 Increasing capacitance for high density DRAM by microlithography patterning  
A method is disclosed for increasing the capacitance of high-density DRAM devices by microlithographic patterning. A semiconductor substrate having a MOS transistor comprising a gate and...
6015735 Method for forming a multi-anchor DRAM capacitor and capacitor formed  
The present invention discloses a method for forming a DRAM capacitor that has improved charge storage capacity by utilizing a deposition process wherein alternating layers of doped and undoped...
6015734 Method for improving the yield on dynamic random access memory (DRAM) with cylindrical capacitor structures  
A new method for forming stacked capacitors for DRAMs having improved yields when the bottom electrode is misaligned to the node contact is achieved. A planar silicon oxide (SiO 2 ) first...
Matches 301 - 350 out of 517 < 1 2 3 4 5 6 7 8 9 10 11 >