Matches 101 - 150 out of 519 < 1 2 3 4 5 6 7 8 9 10 11 >
Match Document Document Title
6815226 Ferroelectric memory device and method of forming the same  
The method of forming a ferroelectric memory device includes forming capacitor patterns over a substrate, each capacitor pattern having an adhesive assistant pattern, a lower electrode, a...
6808982 Method of reducing electrical shorts from the bit line to the cell plate  
A stress buffer and dopant barrier in the form of a TetraEthylOrthoSilicate (TEOS) film is deposited after the capacitor cell plate has been etched and cleaned to thereby eliminate electrical...
6806188 Semiconductor device capable of preventing ring defect and method of manufacturing the same  
A semiconductor device capable of preventing a ring defect and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate having a junction region,...
6806139 Method of fabricating a MIM capacitor using etchback  
A method of fabricating a metal-insulator-metal (MIM) capacitor of a semiconductor device having an upper and lower electrode formed of metal is provided. Portions of a conductive layer for a lower...
6800515 DRAM and MOS transistor manufacturing  
A method for manufacturing DRAM cells in a semiconductor wafer including MOS control transistors and capacitors, the source/drain regions and the gates of the control transistors being covered with...
6800522 Method for fabricating semiconductor device with storage node contact structure  
The present invention is related to a method for fabricating a semiconductor device capable of preventing a bit line pattern from being attacked during a storage node contact hole formation. The...
6790717 Method for producing a semiconductor component comprising a t-shaped contact electrode  
In order to fabricate a semiconductor component having a contact electrode that is T-shaped in cross section, in particular a field-effect transistor with a T gate, a method is described in which a...
6784068 Capacitor fabrication method  
A capacitor is fabricated over a first layer having a first conductive plug formed on a substrate in a semiconductor memory. On the first layer, a silicon nitride film, a first capacitor oxide...
6780709 Method for forming charge storage node  
A method for forming a charge storage node is disclosed. The method for forming a charge storage node prevents the bridge between cells and maximize the hole size of a cell forming portion to thus...
6770526 Silicon nitride island formation for increased capacitance  
A semiconductor device is fabricated using a micro-masking structure. The micro-masking structure is formed along the sidewalls of a trench in a semiconductor substrate or along the sidewalls of an...
6767789 Method for interconnection between transfer devices and storage capacitors in memory cells and device formed thereby  
The preferred embodiment of the present invention provides unique structure for connecting between a storage capacitor and a transfer device in a memory cell and a method for fabricating the same....
6764896 Semiconductor manufacturing method including patterning a capacitor lower electrode by chemical etching  
Sputter etching of silicon oxide films is performed with an etching gas such as C 4 F 8 . Since a silicon nitride film is little etched at this time, when the etching is performed under a condition...
6762090 Method for fabricating a capacitor  
A method for fabricating capacitor capable of simplifying formation processes of ruthenium (Ru) layer for storage node electrode formation of capacitor comprises the steps of: forming a first...
6762445 DRAM memory cell with dummy lower electrode for connection between upper electrode and upper layer interconnect  
In a DRAM memory cell that is a semiconductor memory device, a bit line connected to a bit line plug and local interconnect are provided on a first interlayer insulating film. A contact is not...
6759267 Method for forming a phase change memory  
A method of programming a first memory cell in an array of at least four memory cells in a semiconductor device, each memory cell including a polysilicon gate, first and second spaced-apart...
6750099 Method for fabricating capacitor of semiconductor device  
A method for fabricating a capacitor of a semiconductor device is disclosed, in which it is possible to obtain reliability in an etch process, and to simplify manufacturing process steps. The...
6746877 Encapsulation of ferroelectric capacitors  
A ferroelectric capacitor encapsulation method for preventing hydrogen damage to electrodes and ferroelectric material of the capacitor. In general terms, the method for encapsulating a capacitor...
6734079 Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein  
Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a...
6730956 Method for manufacturing the storage node of a capacitor of a semiconductor device and a storage node manufactured by the method  
Methods for manufacturing a storage node of a capacitor of a semiconductor device and a storage node manufactured by these methods are provided. An exemplary method for manufacturing a storage node...
6730563 Method of manufacturing semiconductor device  
A rough polysilicon film located on the upper surface of an interlayer film is removed by a CMP process, so that storage nodes and an embedded TEOS film are formed. The embedded TEOS film is...
6723602 Method for spacer patterned, high dielectric constant capacitor  
A high dielectric constant memory cell capacitor and method for producing the same, wherein the memory cell capacitor utilizes relatively large surface area conductive structures of thin spacer...
6696339 Dual-damascene bit line structures for microelectronic devices and methods of fabricating microelectronic devices  
The present invention is directed toward methods of fabricating components for microelectronic devices, microelectronic devices including memory cells or other components, and computers including...
6693017 MIMcap top plate pull-back  
A MIM capacitor includes a bottom plate, a capacitor dielectric disposed over the bottom plate, and a top plate disposed over the capacitor dielectric. An etch stop material is disposed over the...
6686265 Method of producing a capacitor electrode with a barrier structure  
A capacitor electrode is produced with an underlying barrier structure. A barrier incorporation layer is used and a CMP (chemical mechanical polishing) process is employed in order to produce the...
6686240 Semiconductor memory device having a multiple tunnel junction layer pattern and method of fabricating the same  
A semiconductor memory device and fabricating method thereof, wherein the semiconductor memory device includes first and second conductive regions formed in parallel at predetermined regions of a...
6682984 Method of making a concave capacitor  
The present invention is directed to fabrication of a capacitor formed with a substantially concave shape and having optional folded or convoluted surfaces. The concave shape optimizes surface area...
6645809 Process for producing a capacitor configuration  
In order to provide a particularly space-saving capacitor configuration in a memory device, a plurality of second electrode regions which are not in direct electrical contact with one another are...
6638830 Method for fabricating a high-density capacitor  
A method of fabricating a high-density capacitor. At least one first trench is formed in a dielectric layer positioned on a semiconductor substrate. A first liner layer and a first conductive layer...
6620680 Method of forming a contact structure and a container capacitor structure  
Method for forming at least a portion of a top electrode of a container capacitor and at least a portion of a contact plug in one deposition are described. In one embodiment, the top electrode is...
6620702 Method of producing low thermal budget high dielectric constant structures  
Methods are presented for reducing the thermal budget in a semiconductor manufacturing process that include for instance, depositing high dielectric constant films to form MIS capacitors, where...
6617635 Integrated circuit devices having contact and container structures  
Integrated circuitry fabricated using methods for forming contact structures and container structures, as described herein, are provided. The integrated circuitry formed by the methods of the...
6613640 Method for fabricating an integrated ferroelectric semiconductor memory and integrated ferroelectric semiconductor memory  
The integrated ferroelectric semiconductor memory is fabricated according to the stack cell principle. A ferroelectric capacitor module is formed on an intermediate oxide above a selection...
6607966 Selective method to form roughened silicon  
A method of forming silicon storage nodes on silicon substrates, wherein the silicon storage nodes have a roughened surface, which does not result in deposition of silicon atoms over the entire...
6589835 Method of manufacturing flash memory  
A process of manufacturing a flash memory device having a tunnel oxide layer with high reliability, low defect and interface trap by using semi-atmospheric pressure chemical vapor deposition...
6569734 Method for two-sided fabrication of a memory array  
A method for fabricating a memory array includes fabricating a first portion ( 110, 310, 510 ) of a memory array on a first side ( 14, 214, 414 ) of a substrate ( 12, 212, 412 ). A second portion (...
6559000 Method of manufacturing a capacitor in a semiconductor device  
There is disclosed a method of manufacturing a capacitor in a semiconductor device. The present invention forms a Ru film as a lower electrode of the capacitor in which a Ta 2 O 5 film is used as...
6555433 Method of manufacture of a crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor  
In this process, a capacitor core is formed on a semiconductor device with a first conductive sublayer in contact with a plug. First form a stack of alternately doped and undoped oxide layers on...
6551876 Processing methods of forming an electrically conductive plug to a node location  
Methods of forming electrical connections with an integrated circuitry substrate node location are described. According to one aspect of the invention, a substrate node location is laterally...
6548349 Method for fabricating a cylinder-type capacitor for a semiconductor device  
A method for fabricating a cylinder-type capacitor for a semiconductor device includes the steps of forming in sequence a first insulating layer, a first etch stop layer, a second insulating layer,...
6548845 Semiconductor device and method of fabricating the same  
A semiconductor device includes a semiconductor substrate, a gate electrode formed over the semiconductor substrate and a first interlevel insulating layer which is formed over the semiconductor...
6544841 Capacitor integration  
A capacitor having an electrode with a general cup shape, including a generally horizontal bottom and vertical walls, and in electric contact by its bottom with a conductive pad, the pad extending...
6544832 Method of fabricating a stack capacitor DRAM  
A DRAM capacitor contact comprised of a silicon oxide layer with a trench having sidewalls and a form in the silicon oxide layer. A dielectric liner is coated on the sidewalls of the trench. A...
6534377 Capacitance elements and method of manufacturing the same  
Providing a capacitance element which prevents short-circuit between adjacent storage node layers caused by an adhering conductive foreign matter. A method of manufacturing a capacitance element...
6534359 Method of fabricating memory cell  
A method of fabricating a vertical transistor of a memory cell is disclosed. Accordinng to this method, a semiconductor substrate is first provided. A pad layer is formed on the surface of the...
6531325 Memory transistor and method of fabricating same  
A ferroelectric memory transistor includes a substrate having active regions therein; a gate stack, including: a high-k insulator element, including a high-k cup and a high-k cap; a ferroelectric...
6531358 Method of fabricating capacitor-under-bit line (CUB) DRAM  
A method for fabricating a CUB DRAM device having an enlarged process window for bit line contact patterning is deacribed. A plurality of capacitor node contact junctions and a bit line junction...
6528385 Method for fabricating a capacitor  
An improved method for fabricating a capacitor capable of reducing defects introduced as a result of complicated processes required to separate the bottom electrodes of the capacitors is provided...
6528369 Layer structure having contact hole and method of producing same  
A dynamic random access memory (DRAM) device includes a stacked capacitor including a storage electrode, a dielectric film and a cell plate. In a preferred embodiment, the storage electrode...
6514819 High capacity stacked DRAM device and process for making a smaller geometry  
A DRAM having a theoretical cell layout efficiency of 100% and a density of up to four gigabits DRAM is obtained without sacrificing the storage capacitor values. This accomplishment is achieved by...
6511880 Capacitor of a semiconductor device and method of manufacturing the same  
A capacitor of a semiconductor device and the method of manufacture thereof, includes the steps of providing a semiconductor substrate; forming a lower electrode on the semiconductor substrate;...
Matches 101 - 150 out of 519 < 1 2 3 4 5 6 7 8 9 10 11 >