Matches 51 - 100 out of 519 < 1 2 3 4 5 6 7 8 9 10 11 >
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7161205 Semiconductor memory device with cylindrical storage electrode and method of manufacturing the same  
There are provided a semiconductor memory device including a cylindrical storage electrode and a method of manufacturing the same. The semiconductor memory device includes an interlevel dielectric...
7153740 Fabrication of lean-free stacked capacitors  
For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first...
7125766 Method of forming capacitor for semiconductor device  
A method of forming a capacitor for a semiconductor device is disclosed. According to the method, a silicon germanium layer and an oxide layer are used as mold layers for forming a storage...
7122420 Methods of recessing conductive material and methods of forming capacitor constructions  
The invention includes a method of forming spaced conductive regions. A construction is formed which includes a first electrically conductive material over a semiconductor substrate. The...
7112487 Method for fabricating a stacked capacitor array having a regular arrangement of a plurality of stacked capacitors  
The present invention provides a method for fabricating a stacked capacitor array ( 1 ), which comprises a regular arrangement of a plurality of stacked capacitors ( 2 ), with a stacked capacitor (...
7109090 Pyramid-shaped capacitor structure  
A capacitor structure which has a generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at...
7105403 Double sided container capacitor for a semiconductor device and method for forming same  
A method for forming a double sided container capacitor comprises forming a first capacitor top plate layer within a recess in a dielectric layer, then forming a first cell dielectric on the first...
7101752 Semiconductor process for removing defects due to edge chips of a semiconductor wafer and semiconductor device fabricated thereby  
A method for removing defects due to edge chips of a semiconductor wafer is disclosed. This method includes forming a molding layer over a semiconductor wafer. The molding layer is patterned to...
7091085 Reduced cell-to-cell shorting for memory arrays  
Bottom electrodes of memory cell capacitors are recessed to prevent electrical shorts between neighboring memory cells. A partially fabricated memory cell capacitor has a bottom electrode...
7081385 Nanotube semiconductor devices and methods for making the same  
Provided herein are vertical nanotube semiconductor devices and methods for making the same. An embodiment of the semiconductor devices comprises a vertical transistor/capacitor cell including a...
7078292 Storage node contact forming method and structure for use in semiconductor memory  
A storage node contact forming method and structure reduces the number of processes required by the conventional art and increases a critical dimension of a storage node to prevent a leaning...
7074670 Method of forming storage node of capacitor in semiconductor memory, and structure therefore  
In one embodiment, an etch stop layer and a mold layer is sequentially formed on a semiconductor substrate having an interlayer insulation layer. The interlayer insulation layer includes a...
7067867 Large-area nonenabled macroelectronic substrates and uses therefor  
A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed...
7067385 Support for vertically oriented capacitors during the formation of a semiconductor device  
A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is...
7056788 Method for fabricating a semiconductor device  
A semiconductor device comprises: a lower contact electrode 1 ; an adhesion improving layer 3 formed on the lower contact electrode 1 ; and a capacitor including a lower electrode 4 in a...
7042705 Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processing  
The present invention provides a sidewall oxygen diffusion barrier and a method for fabricating the sidewall oxygen diffusion barrier that reduces the diffusion of oxygen into contact plugs during...
7037574 Atomic layer deposition for fabricating thin films  
An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses...
7029970 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device capable of preventing an electric short between lower electrodes caused by leaning lower electrodes, or lifted lower electrodes and of securing a...
7027287 Storage capacitor with high memory capacity and low surface area  
A storage capacitor includes at least one first electrode adjacent to at least one second electrode, whereby a lateral capacity is formed between these electrodes. The electrodes include stacks of...
7018892 Semiconductor capacitor structure and method for manufacturing the same  
In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and...
7018893 Method for fabricating bottom electrodes of stacked capacitor memory cells  
Bottom electrodes of stacked capacitor cells are formed by lining a patterned hard mask with a conductive layer. The hard mask is formed by a layered stack. Subsequent to the formation of trenches...
7008853 Method and system for fabricating free-standing nanostructures  
Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release...
6998308 Substrate for carrying a semiconductor chip and a manufacturing method thereof  
A substrate includes a plurality of insulation layers forming a laminated structure and a built-in capacitor formed in the laminated structure, wherein the laminated structure includes a layer of...
6995059 Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions  
Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions are described. In one embodiment, a capacitor storage node...
6991981 Processing methods of forming an electrically conductive plug to a node location  
Methods of forming electrical connections with an integrated circuitry substrate node location are described. According to one aspect of the invention, a substrate node location is laterally...
6984530 Method of fabricating a MRAM device  
A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first...
6964901 Methods of forming rugged electrically conductive surfaces and layers  
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps...
6962846 Methods of forming a double-sided capacitor or a contact using a sacrificial structure  
A method of forming a double-sided capacitor using at least one sacrificial structure, such as a sacrificial liner or a sacrificial plug. A sacrificial liner is formed along sidewalls of at least...
6956263 Field effect transistor structure with self-aligned raised source/drain extensions  
Field effect transistor structures include a channel region formed in a recessed portion of a substrate. The recessed channel portion permits the use of relatively thicker source/drain regions...
6949427 Methods of forming a capacitor structure  
The invention includes a method of forming a capacitor electrode. A sacrificial material sidewall is provided to extend at least partially around an opening. A first silicon-containing material is...
6949480 Method for depositing silicon nitride layer of semiconductor device  
Disclosed is a method for depositing a silicon nitride layer of a semiconductor device. The method includes the steps of providing Al-based compound as a catalyst, and reacting DCS with NH 3 by...
6936510 Semiconductor device with self-aligned contact and its manufacture  
A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first...
6930341 Integrated circuits including insulating spacers that extend beneath a conductive line  
Integrated circuit devices are fabricated by fabricating a conductive line on an insulating layer on an integrated circuit substrate. The conductive line includes a bottom adjacent the insulating...
6924189 Method for manufacturing capacitor bottom electrode of semiconductor device  
A method for manufacturing a capacitor bottom electrode by using low k dielectric material as a sacrificial layer is employed to simplify manufacturing steps and prevent electrical shortage...
6921693 Semiconductor device and process for fabricating the same  
A semiconductor device comprising: a first insulation film 60 formed above a base substrate 10 ; a second insulation film 61 formed on the first insulation film and having different etching...
6897510 MIM capacitor having a high-dielectric-constant interelectrode insulator and a method of fabrication  
A metal-insulator-metal (MIM) capacitor using a high-k dielectric and method of fabrication are described. After forming node contacts to the substrate a patterned stacked layer comprised of a...
6890817 Method of manufacturing a semiconductor device with capacitor electrodes  
A semiconductor device and a method of manufacturing thereof can be gained wherein the occurrence of defects can be prevented and it is possible to reduce the manufacturing cost. The semiconductor...
6890841 Methods of forming integrated circuit memory devices that include a plurality of landing pad holes that are arranged in a staggered pattern and integrated circuit memory devices formed thereby  
An integrated circuit memory device is formed by forming an interlevel insulating layer on a substrate. A plurality of storage node contact holes are formed in the interlayer insulating layer and...
6884678 Method for forming capacitor of semiconductor device  
A method for forming of a capacitor wherein an etching barrier layer comprising a stacked structure of a nitride film and a tantalum oxide film is disclosed. The method comprises the steps of:...
6885048 Transistor-type ferroelectric nonvolatile memory element  
A transistor-type ferroelectric nonvolatile memory element having an MFMIS (metal-ferroelectric-metal-insulator-semiconductor) structure that can be highly densely integrated. The MFMIS transistor...
6881643 Semiconductor device producing method and semiconductor device  
In a semiconductor device producing method, a plug is formed within a contact hole formed in a barrier film and an interlayer insulating film on a semiconductor substrate. Then, an insulation film...
6878602 Dielectric cure for reducing oxygen vacancies  
A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a...
6875655 Method of forming DRAM capacitors with protected outside crown surface for more robust structures  
A method for fabricating a high-density array of crown capacitors with increased capacitance while reducing process damage to the bottom electrodes is achieved. The process is particularly useful...
6867094 Method of fabricating a stacked capacitor for a semiconductor device  
The disclosure describes a stacked capacitor and a method of forming the same. The method prevents a storage node of the stacked capacitor from crumbling due to lack of support, thereby improving...
6867053 Fabrication of a FeRAM capacitor using a noble metal hardmask  
A ferroelectric capacitor is fabricated using a noble metal hardmask. A hardmask is deposited on a top electrode of a capacitor stack comprising a ferroelectric layer sandwiched between the top...
6864138 Methods of forming capacitor structures and DRAM arrays  
The invention encompasses DRAM constructions, capacitor constructions, integrated circuitry, and methods of forming DRAM constructions, integrated circuitry and capacitor constructions. The...
6858891 Nanotube semiconductor devices and methods for making the same  
Provided herein are vertical nanotube semiconductor devices and methods for making the same. An embodiment of the semiconductor devices comprises a vertical transistor/capacitor cell including a...
6849889 Semiconductor device having storage node contact plug of DRAM (dynamic random access memory)  
A method for forming a storage node contact plug of a dynamic random access memory includes forming insulating layers on an overall surface of a semiconductor substrate having a plurality of buried...
6821911 Manufacturing method of carbon nanotube transistors  
A manufacturing method of carbon nanotube transistors is disclosed. The steps include: forming an insulating layer on a substrate; forming a first oxide layer on the insulating layer using a...
6818497 Method for fabricating capacitor using electrochemical deposition  
The present invention relates to a method for fabricating a capacitor of a semiconductor memory device using an electrochemical deposition. The method in accordance with the present invention...
Matches 51 - 100 out of 519 < 1 2 3 4 5 6 7 8 9 10 11 >