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7618874 |
Methods of forming capacitors
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being...
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7618860 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes forming a first insulating layer over a substrate where a landing contact plug is formed, forming an etch barrier pattern having a line type...
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7615444 |
Method for forming a capacitor structure
A method for forming a capacitor structure, according to which the following consecutive steps are executed: providing a substrate having on its surface contact pads and a dielectric mold provided...
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7612400 |
MIM device and electronic apparatus
An MIM device includes a lower electrode of a metal nitride film, a hysteresis film of an oxide film containing Nb formed on the lower electrode, and an upper electrode of a metal nitride film...
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7611945 |
Method and resulting structure for fabricating DRAM capacitor structure
A method for forming a capacitor structure for a dynamic random access memory device. The method includes forming a device layer overlying a semiconductor substrate, e.g., silicon wafer. The method...
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7608881 |
Thin-film device and method of manufacturing same
A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor...
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7608517 |
Method for forming capacitor of semiconductor device
Disclosed is a method for forming a capacitor of a semiconductor device, which can secure wanted charging capacity and also improve leakage current characteristics. The method comprises the steps...
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7608503 |
Side wall active pin memory and manufacturing method
A method of forming a memory cell comprises forming a stack comprising a first electrode, an insulating layer over the first electrode, and a second electrode over the insulating layer, with a side...
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7605037 |
Manufacturing method for an integrated semiconductor memory device and corresponding semiconductor memory device
The present invention provides an integrated semiconductor memory device comprising: a semiconductor substrate; a plurality of active area lines formed in said semiconductor substrate, each of...
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7605035 |
Method of fabricating semiconductor device by exposing upper sidewalls of contact plug to form charge storage electrode
According to some embodiments, a method includes forming at least two contact plugs that penetrate an insulating layer to connect with a semiconductor substrate. The contact plugs have an upper...
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7605034 |
Integrated circuit memory cells and methods of forming
An integrated circuit memory cell includes a combined first capacitor electrode and first transistor source/drain, a second capacitor electrode, a capacitor dielectric between the first and second...
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7602599 |
Metal-metal capacitor and method of making the same
A method of making a metal-metal capacitor is disclosed, in which a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, and a third metal layer are formed...
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7601181 |
Methods of making thin film capacitors comprising a manganese doped barium titantate dielectric
Described herein are methods for making articles comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount...
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7598138 |
Semiconductor device manufacturing method
Provided is a semiconductor device manufacturing method including the steps of: forming an n-type impurity diffusion region by ion-implanting arsenic into a capacitor formation region of a silicon...
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7595251 |
Method of fabricating semiconductor device having alignment key and semiconductor device fabricated thereby
In a method of fabricating a semiconductor device having an alignment key and a semiconductor device fabricated thereby. The method of fabricating a semiconductor device includes providing a...
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7592220 |
Capacitance process using passivation film scheme
In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a...
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7592219 |
Method of fabricating capacitor over bit line and bottom electrode thereof
A method of fabricating a capacitor over bit line (COB) is provided. First, a substrate is provided and a plurality of word lines is formed on the substrate. Next, a plurality of landing plug...
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7592217 |
Capacitor with zirconium oxide and method for fabricating the same
A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered dielectric structure on the storage node,...
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7589373 |
Semiconductor device
The present invention provides a semiconductor device, which includes a substrate and a sensing memory device. The substrate includes a metal-oxide-semiconductor transistor having a gate. The...
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7585723 |
Method for fabricating capacitor
A method for fabricating a semiconductor device includes forming an insulation structure over a substrate structure including contact plugs, etching the insulation structure to form opening regions...
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7582525 |
Method for fabricating capacitor of semiconductor memory device using amorphous carbon
A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming storage node contact plugs penetrating into the...
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7579643 |
Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same
A capacitor may include a first electrode, a second electrode, a low dielectric layer, and/or a high dielectric layer. The first electrode may include at least one first electrode branch. The...
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7575971 |
Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same
According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an...
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7573088 |
DRAM array and electronic system
The invention includes a semiconductor construction including rows of contact plugs, and rows of parallel bottom plates. The plug pitch is approximately double the plate pitch. The invention...
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7572710 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
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7569460 |
Capacitor structure and method for preparing the same
A capacitor structure comprises a substrate having a contact plug, a conductive cylinder positioned on the substrate and an electroplating structure covering the conductive cylinder, wherein a...
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7569452 |
Screen-printed filter capacitors for filtered feedthroughs
A filter capacitor comprising a pre-sintered substrate supporting alternating active and ground electrode layers segregated by a dielectric layer is described. The substrate is of a ceramic...
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7566628 |
Process for making a resistive memory cell with separately patterned electrodes
Methods of making MIM structures and the resultant MIM structures are provided. The method involves forming a top electrode layer over a bottom electrode and an insulator on a substrate and forming...
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7566614 |
Capacitor of semiconductor device and method of fabricating the same
Disclosed are a capacitor of a semiconductor device and a method of fabricating the same. The capacitor includes a capacitor top electrode, a capacitor bottom electrode aligned with a bottom...
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7566611 |
Manufacturing method for an integrated semiconductor structure
The present invention provides a manufacturing method for an integrated semiconductor structure comprising the steps of providing a semiconductor substrate having a plurality of gate stacks in a...
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7563672 |
Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors
Integrated circuit devices including metal-insulator-metal (MIM) capacitors are provided. The MIM capacitors may include an upper electrode having first and second layers. The first layer of the...
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7563667 |
Method for fabricating semiconductor device
In a method for forming a semiconductor device, a device isolation layer is formed in a capacitor region of a silicon substrate, and a bottom electrode and a dielectric layer are formed on the...
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7560334 |
Method and system for incorporating high voltage devices in an EEPROM
A method and system for fabricating a stacked capacitor and a DMOS transistor are disclosed. In one aspect, the method and system include providing a bottom plate, an insulator, and an additional...
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7560332 |
Integrated circuit capacitor structure
Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper...
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7553722 |
Semiconductor device and method for manufacturing the same
A semiconductor device includes: a semiconductor substrate having a first surface and a second surface, wherein the substrate has a first conductive type; a first trench extending from the first...
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7550362 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes forming a sacrificial layer for forming a lower electrode as an amorphous carbon layer in order to prevent collapsing of a cylindrical...
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7547973 |
Tamper-resistant semiconductor device
The semiconductor device of the present invention includes: first defensive wiring provided above a diffusion isolation layer formed in a substrate or a well, arranged at a minimum wiring pitch...
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7547638 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes the steps of forming a circuit element on a semiconductor substrate, forming an insulation film covering the circuit element, forming a...
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7544562 |
Method for manufacturing a capacitor electrode structure
A method for manufacturing a capacitor electrode structure, according to which the following steps are executed: A substrate is provided, which comprises contact pads arranged in lines and rows on...
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7538007 |
Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same
Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed...
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7538002 |
Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors
A semiconductor fabrication process includes forming isolation structures on either side of a transistor region, forming a gate structure overlying the transistor region, removing source/drain...
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7535745 |
Ferroelectric memory device and method of manufacturing the same
A ferroelectric memory device, which includes a vertical ferroelectric capacitor having an electrode distance smaller than a minimum feature size of lithography technology being used and suitable...
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7531863 |
Semiconductor device and method of fabricating the same
A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor...
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7531420 |
Semiconductor memory cell and corresponding method of producing same
A semiconductor memory cell and production method provides a storage capacitor connected to a selection transistor. The storage capacitor is formed as a contact hole capacitor in at least one...
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7531419 |
Semiconductor device and a method of manufacturing the same
A capacitor has an MIM (Metal Insulator Metal) structure comprising a lower electrode formed in the interior of an electrode trench which is formed in an interlayer insulating film, a dielectric...
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7531417 |
High performance system-on-chip passive device using post passivation process
A system and method for forming post passivation passive components, such as resistors and capacitors, is described. High quality electrical components, are formed on a layer of passivation, or on...
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7528429 |
Ferroelectric capacitor and semiconductor device
A ferroelectric capacitor includes: a base substrate; a first electrode provided above the base substrate; a ferroelectric layer provided above the first electrode; a conductive film provided on...
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7524724 |
Method of forming titanium nitride layer and method of fabricating capacitor using the same
A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition...
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7518245 |
Contact structure of a semiconductor device
In one embodiment, a semiconductor device comprises a conductive pad formed in a semiconductor substrate. The semiconductor device further includes a conductive pattern overlying a peripheral...
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7517754 |
Methods of forming semiconductor constructions
The invention includes methods of forming semiconductor constructions in which electrically conductive structures are formed between bitlines to electrically connect with storage node contacts. The...
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