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7387929 Capacitor in semiconductor device and method of manufacturing the same  
The present invention relates to a capacitor in semiconductor device and a method of manufacturing the same, wherein, owing to formation of a lower electrode and an upper electrode into a stack...
7374993 Methods of forming capacitors  
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The...
7329573 Methods of forming capacitors  
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The...
7268052 Method for reducing soft error rates of memory cells  
In one embodiment, a method of fabricating a transistor for a memory cell includes the steps of performing a counter doping implant before or after a source/drain implant. The counter doping...
7250334 Metal insulator metal (MIM) capacitor fabrication with sidewall spacers and aluminum cap (ALCAP) top electrode  
A method ( 10 ) of forming a MIM (metal insulator metal) capacitor is disclosed whereby adverse affects associated with copper diffusion are mitigated even as the capacitor is scaled down. A...
7244650 Transistor and method for manufacturing the same  
A transistor including a semiconductor substrate defined with an active region and a device isolation region, a gate formed on the semiconductor substrate, an insulating spacers formed on...
7217616 Non-volatile memory cell and method of forming the same  
A non-volatile memory cell comprising a transistor and two plane capacitors. In the memory cell, a switching device is disposed on a substrate, a first plane capacitor having a first doped region...
7214583 Memory cell with an asymmetric crystalline structure  
Asymmetrically structured memory cells and a fabrication method are provided. The method comprises: forming a bottom electrode; forming an electrical pulse various resistance (EPVR) first layer...
7205190 Semiconductor device fabrication method  
The present invention adequately activates a substrate contact region of a support substrate without substantially changing the conventional SOI-CMOS device formation process. An exposed face of...
7148103 Multilevel poly-Si tiling for semiconductor circuit manufacture  
Method of manufacturing a semiconductor device, including a first baseline technology electronic circuit ( 1 ) and a second option technology electronic circuit ( 2 ) as functional parts of a...
7091083 Method for producing a capacitor  
A method for producing a capacitor comprises providing a raw structure having a substrate and at least one dielectric layer, wherein a first area and a second area of the substrate are separated by...
7087486 Method for scalable, low-cost polysilicon capacitor in a planar DRAM  
Capacitor structures that have increased capacitance without compromising cell area are provided as well as methods for fabricating the same. A first capacitor structure includes insulating...
7060556 Drain extended MOS transistors with multiple capacitors and methods of fabrication  
Multi-capacitor drain extended transistor devices and methods are provided. A first capacitor structure comprises a first dielectric layer ( 14 ) and a first gate layer ( 16 ) and first and second...
7029971 Thin film dielectrics for capacitors and methods of making thereof  
Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of...
6967133 Method for fabricating a semiconductor structure  
The present invention provides a method for fabricating a semiconductor structure having a plurality of gate stacks (GS 1 , GS 2 , GS 3 , GS 4 ) on a semiconductor substrate ( 10 ), having the...
6949442 Methods of forming MIM capacitors  
A method for forming a MIM capacitor and a MIM capacitor device formed by same. A preferred embodiment comprises selectively forming a first cap layer over a wafer including a MIM capacitor bottom...
6936514 Semiconductor component and method  
An SOI semiconductor component having a portion of a circuit element in the handle wafer and a method for manufacturing the SOI semiconductor component. An SOI substrate has a handle wafer bonded...
6881999 Semiconductor device with analog capacitor and method of fabricating the same  
A semiconductor device having an analog capacitor and a method of fabricating the same are disclosed. The semiconductor device includes a bottom plate electrode disposed at a predetermined region...
6881621 Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the same  
A method of fabricating a SOI substrate includes sequentially forming a first semiconductor layer, which may be either a porous semiconductor layer or a bubble layer, a second semiconductor layer...
6833299 Method of fabricating a stacked poly-poly and MOS capacitor using a sige integration scheme  
A stacked Poly-Poly/MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate...
6777304 Method for producing an integrated circuit capacitor  
A capacitor structure ( 10 ) is implemented in an integrated circuit chip ( 11 ) along with other devices at the device level in the chip structure. The method of manufacturing the capacitor...
6773981 Methods of forming capacitors  
Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor comprises a capacitor dielectric layer comprising Ta 2 O 5 formed over a first capacitor electrode. A...
6762109 Method of manufacturing semiconductor device with reduced number of process steps for capacitor formation  
A method of manufacturing a semiconductor device and a method of forming a capacitor allow the formation of a high-performance capacitor without increasing the number of process steps. A silicide...
6693003 Semiconductor device and manufacturing method of the same  
In a semiconductor device, formed are a lower capacitor electrode on an element isolation film on a silicon substrate, a capacitor insulating film and an upper capacitor electrode. A silicon oxide...
6670236 Semiconductor device having capacitance element and method of producing the same  
To shorten the production process of the semiconductor device having the capacitance element. The pad oxide film ( 2 ) and the first polycrystalline silicon layer ( 3 ) are used as a stress...
6664198 Method of forming a silicon nitride dielectric layer  
Methods of forming thin nitride dielectric layers for semiconductor devices are provided. Additionally, methods of forming capacitor structures utilizing thin nitride dielectric layers are...
6638816 Integrated circuit device with MIM capacitance circuit and method of manufacturing the same  
A first conductive layer of metal silicide, a silicon layer, an insulating layer, and a second conductive layer of metal or metal silicide are deposited in the order named on a surface of a a...
6621111 Capacitor structure of semiconductor device and method for forming the same  
A capacitor structure includes a device isolation layer pattern formed at a predetermined region of a semiconductor substrate to define an active region; an upper electrode disposed over an upper...
6569728 Method for manufacturing a capacitor for use in a semiconductor device  
A method for forming a capacitor by stacking impurity-doped polysilicon layers having different concentrations to form a bottom electrode, treating surfaces of the bottom electrode to prevent a low...
6541336 Method of fabricating a bipolar transistor having a realigned emitter  
A method of fabricating a bipolar transistor. The method comprising: forming an emitter opening in a dielectric layer to expose a surface of a base layer; performing a clean of the exposed surface,...
6509246 Production of semiconductor integrated circuit  
A semiconductor integrated circuit in which the storage capacitor has an increased capacitance and a decreased leakage current. The storage capacitor is formed by the steps of: forming a...
6495426 Method for simultaneous formation of integrated capacitor and fuse  
A process for forming a capacitive structure and a fuse structure in an integrated circuit device includes forming a first capacitor plate and first and second fuse electrodes in a first dielectric...
6495416 Semiconductor integrated circuit device with MOS transistor and MOS capacitor and method for manufacturing the same  
A method for fabricating a semiconductor device using an etching stopper film without increasing a number of steps of photoetching and without degrading the device characteristics. A MOS capacitor...
6475855 Method of forming integrated circuitry, method of forming a capacitor and method of forming DRAM integrated circuitry  
The invention comprises a method of forming integrated circuitry, a method of forming a capacitor, a methods of forming DRAM integrated circuitry, integrated circuitry and DRAM integrated...
6451664 Method of making a MIM capacitor with self-passivating plates  
A method of making a metal-insulator-metal (MIM) capacitor ( 158 ) having self-passivating plates ( 143, 155 ). A liner ( 116 ) is deposited on a workpiece ( 112 ) and dielectric ( 114 ). A...
6451645 Method for manufacturing semiconductor device with power semiconductor element and diode  
In a method for forming a semiconductor device having a power MOSFET and a diode, after a gate electrode and n + type source regions for the power MOSFET and an n + type region of a poly-Si layer...
6432776 Method of manufacturing semiconductor device  
A section separator region is formed in a semiconductor substrate in which a p-type well region has been formed, to separate the substrate into an I/O section and a core section. An oxide film and...
6429066 Method for producing a polysilicon circuit element  
A circuit element comprising a semiconductor substrate. A well region of a first conductivity type is formed in a surface of the substrate. A dielectric film is formed on the substrate. A gate...
6358794 Capacitor of semiconductor device and method of fabricating the same  
A capacitor of a semiconductor device is provided which includes a semiconductor substrate, an insulating interlayer formed on the semiconductor substrate, the insulating interlayer having a...
6352874 Method of manufacturing a sensor  
A method of manufacturing a sensor includes forming a first electrode ( 120, 1120 ), forming a sacrificial layer ( 520 ) over the first electrode, and forming a layer ( 130 ) over the sacrificial...
6329703 Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact  
A contact between a polycrystalline silicon structure and a monocrystalline silicon region is produced by doping the silicon structure in amorphous or polycrystalline form and/or doping the...
6323083 Method for forming lower electrode structure of capacitor of semiconductor device  
A method for forming a lower electrode structure of a capacitor of a semiconductor device, includes the steps of: forming an active region in a semiconductor substrate; forming an insulation layer...
6316339 Semiconductor device and production method thereof  
On a silicon substrate 1 is provided a silicon oxide film 2, on which a polycrystalline silicon film 3 is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa...
6312988 Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions  
Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions are described. In one embodiment, a capacitor storage node...
6303432 Method of manufacturing a semiconductor device  
There is described a method of manufacturing a semiconductor device, wherein a DRAM memory cell and a logic circuit are fabricated on a single semiconductor substrate, which method enables...
6284592 Method for fabricating a semiconductor device  
A method for fabricating a semiconductor device, comprises the steps of: forming a field oxide layer on a first conduction type semiconductor substrate having a cell area and a peripheral circuit...
6281066 Method of manufacturing a capacitor in a memory device  
There is disclosed a method of manufacturing a capacitor of a semiconductor device by which a CVD TiN film and a MOCVD TiN film, and a polysilicon film are sequentially stacked in forming an...
6277681 Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics  
A method of making a semiconductor device and the device. The device, according to a first embodiment, is fabricated by providing a silicon (111) surface, forming on the surface a dielectric layer...
6232172 Method to prevent auto-doping induced threshold voltage shift  
A method to prevent threshold shifts in MOS transistors due to auto-doping from heavily doped polysilicon layers. Isolation regions are provided in a semiconductor substrate separating active...
6228689 Trench style bump and application of the same  
A trench style bump and the application of the same. A trench style bump is formed on a silicon chip. The silicon chip is laminated on a substrate which has a circuit built inside and an...
Matches 1 - 50 out of 130 1 2 3 >